Page 1282 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL3714ZS
Infineon Technologies

MOSFET N-CH 20V 36A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock391,824
IRL3502S
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,984
APT8018JN
Microsemi Corporation

MOSFET N-CH 800V 40A ISOTOP

Package: SOT-227-4, miniBLOC

Stock4,864
PMN35EN,115
NXP

MOSFET N-CH 30V 5.1A 6TSOP

Package: SC-74, SOT-457

Stock76,800
NTD6415AN-1G
ON Semiconductor

MOSFET N-CH 100V 23A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock6,672
SFR9014TF
Fairchild/ON Semiconductor

MOSFET P-CH 60V 5.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock24,000
IPW60R017C7XKSA1
Infineon Technologies

HIGH POWER_NEW

Package: -

Stock7,680
IXFK33N50
IXYS

MOSFET N-CH 500V 33A TO-264AA

Package: TO-264-3, TO-264AA

Stock3,152
NVMFS6B05NT3G
ON Semiconductor

MOSFET N-CH 100V 104A SO8FL

Package: 8-PowerTDFN

Stock6,784
IPZ40N04S5L4R8ATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: 8-PowerTDFN

Stock2,416
STF18NM60ND
STMicroelectronics

MOSFET N-CH 600V 13A TO-220FP

Package: TO-220-3 Full Pack

Stock2,992
STP4NK60ZFP
STMicroelectronics

MOSFET N-CH 600V 4A TO-220FP

Package: TO-220-3 Full Pack

Stock534,000
STF3LN80K5
STMicroelectronics

MOSFET N-CH 800V 2A TO220FP

Package: TO-220-3 Full Pack

Stock7,616
SIR872ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 150V 53.7A PPAK SO-8

Package: PowerPAK? SO-8

Stock18,864
DMG9N65CT
Diodes Incorporated

MOSFET N-CH 650V 9A TO220AB

Package: TO-220-3

Stock54,600
SPP08P06PHXKSA1
Infineon Technologies

MOSFET P-CH 60V 8.8A TO-220

Package: TO-220-3

Stock14,994
IXFX360N15T2
IXYS

MOSFET N-CH 150V 360A PLUS247

Package: TO-247-3

Stock7,620
TP65H070LDG-TR
Transphorm

650 V 25 A GAN FET

Package: -

Stock4,905
IXTQ60N10T
IXYS

MOSFET N-CH 100V 60A TO3P

Package: -

Request a Quote
DMT69M5LCG-7
Diodes Incorporated

MOSFET BVDSS: 61V~100V V-DFN3333

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL3714ZS	Infineon Technologies	MOSFET N-CH 20V 36A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock391,824	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	2.55V @ 250µA	7.2nC @ 4.5V	550pF @ 10V	±20V	-	35W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL3502S	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,984	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT8018JN	Microsemi Corporation	MOSFET N-CH 800V 40A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 690W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock4,864	MOSFET (Metal Oxide)	800V	40A (Tc)	10V	4V @ 5mA	700nC @ 10V	14000pF @ 25V	±30V	-	690W (Tc)	180 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
PMN35EN,115	NXP	MOSFET N-CH 30V 5.1A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 334pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 31 mOhm @ 5.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock76,800	MOSFET (Metal Oxide)	30V	5.1A (Ta)	4.5V, 10V	2.5V @ 250µA	9.3nC @ 10V	334pF @ 15V	±20V	-	500mW (Ta)	31 mOhm @ 5.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
NTD6415AN-1G	ON Semiconductor	MOSFET N-CH 100V 23A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 55 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock6,672	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	83W (Tc)	55 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
SFR9014TF	Fairchild/ON Semiconductor	MOSFET P-CH 60V 5.3A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock24,000	MOSFET (Metal Oxide)	60V	5.3A (Tc)	10V	4V @ 250µA	11nC @ 10V	350pF @ 25V	±30V	-	2.5W (Ta), 24W (Tc)	500 mOhm @ 2.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPW60R017C7XKSA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,680	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK33N50	IXYS	MOSFET N-CH 500V 33A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 227nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock3,152	MOSFET (Metal Oxide)	500V	33A (Tc)	10V	4V @ 4mA	227nC @ 10V	5700pF @ 25V	±20V	-	416W (Tc)	160 mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
NVMFS6B05NT3G	ON Semiconductor	MOSFET N-CH 100V 104A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,784	MOSFET (Metal Oxide)	100V	-	10V	4V @ 250µA	44nC @ 10V	3100pF @ 25V	±16V	-	3.8W (Ta), 165W (Tc)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IPZ40N04S5L4R8ATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 17µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,416	MOSFET (Metal Oxide)	40V	40A (Tc)	4.5V, 10V	2V @ 17µA	29nC @ 10V	1560pF @ 25V	±16V	-	48W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
STF18NM60ND	STMicroelectronics	MOSFET N-CH 600V 13A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,992	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	5V @ 250µA	34nC @ 10V	1030pF @ 50V	±25V	-	30W (Tc)	290 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STP4NK60ZFP	STMicroelectronics	MOSFET N-CH 600V 4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock534,000	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.5V @ 50µA	26nC @ 10V	510pF @ 25V	±30V	-	25W (Tc)	2 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STF3LN80K5	STMicroelectronics	MOSFET N-CH 800V 2A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 2.63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 102pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 3.25 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,616	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	2.63nC @ 10V	102pF @ 100V	±30V	-	20W (Tc)	3.25 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SIR872ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 53.7A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1286pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock18,864	MOSFET (Metal Oxide)	150V	53.7A (Tc)	7.5V, 10V	4.5V @ 250µA	47nC @ 10V	1286pF @ 75V	±20V	-	6.25W (Ta), 104W (Tc)	18 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
DMG9N65CT	Diodes Incorporated	MOSFET N-CH 650V 9A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock54,600	MOSFET (Metal Oxide)	650V	9A (Tc)	10V	5V @ 250µA	39nC @ 10V	2310pF @ 25V	±30V	-	165W (Tc)	1.3 Ohm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPP08P06PHXKSA1	Infineon Technologies	MOSFET P-CH 60V 8.8A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock14,994	MOSFET (Metal Oxide)	60V	8.8A (Tc)	10V	4V @ 250µA	15nC @ 10V	420pF @ 25V	±20V	-	42W (Tc)	300 mOhm @ 6.2A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IXFX360N15T2	IXYS	MOSFET N-CH 150V 360A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 715nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 47500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1670W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,620	MOSFET (Metal Oxide)	150V	360A (Tc)	10V	5V @ 8mA	715nC @ 10V	47500pF @ 25V	±20V	-	1670W (Tc)	4 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
TP65H070LDG-TR	Transphorm	650 V 25 A GAN FET FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.8V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PQFN (8x8) Package / Case: 3-PowerDFN	Package: -	Stock4,905	GaNFET (Gallium Nitride)	650 V	25A (Tc)	10V	4.8V @ 700µA	9.3 nC @ 10 V	600 pF @ 400 V	±20V	-	96W (Tc)	85mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	3-PQFN (8x8)	3-PowerDFN
IXTQ60N10T	IXYS	MOSFET N-CH 100V 60A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	60A (Tc)	10V	4.5V @ 50µA	49 nC @ 10 V	2650 pF @ 25 V	±30V	-	176W (Tc)	18mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
DMT69M5LCG-7	Diodes Incorporated	MOSFET BVDSS: 61V~100V V-DFN3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.37W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: V-DFN3333-8 (Type B) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	14.6A (Ta), 52.1A (Tc)	4.5V, 10V	2.5V @ 250µA	28.4 nC @ 10 V	1406 pF @ 30 V	±20V	-	1.37W (Ta)	8.3mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	V-DFN3333-8 (Type B)	8-PowerVDFN
MMFT2N25ET3	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK7S0R9-40HJ	Nexperia USA Inc.	MOSFET N-CH 40V 375A LFPAK88 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 375A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 32 V Input Capacitance (Ciss) (Max) @ Vds: 12888 pF @ 25 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 375W (Ta) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK88 (SOT1235) Package / Case: SOT-1235	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	375A (Ta)	10V	3.6V @ 1mA	166 nC @ 32 V	12888 pF @ 25 V	+20V, -10V	-	375W (Ta)	0.9mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK88 (SOT1235)	SOT-1235
BUK9M20-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 25A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V Vgs (Max): +16V, -10V FET Feature: - Power Dissipation (Max): 38W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock10,791	MOSFET (Metal Oxide)	40 V	25A (Ta)	4.5V, 10V	2.2V @ 1mA	12.6 nC @ 10 V	763 pF @ 25 V	+16V, -10V	-	38W (Ta)	20mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
APT6010JLL	Microchip Technology	MOSFET N-CH 600V 47A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	47A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	6710 pF @ 25 V	-	-	-	100mOhm @ 23.5A, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
2SK3702	Sanyo	FOR 60V MOTOR DRIVERS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 20 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 2W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220ML Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	18A (Ta)	-	-	19 nC @ 10 V	775 pF @ 20 V	-	-	2W (Ta), 20W (Tc)	55mOhm @ 9A, 10V	150°C (TJ)	Through Hole	TO-220ML	TO-220-3 Full Pack
SSM6P16FE-TE85L-F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 0.1A ES6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 3 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	100mA (Ta)	-	-	-	11 pF @ 3 V	-	-	150mW (Ta)	8Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	ES6	SOT-563, SOT-666
IAUC120N06S5L015ATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 235A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 94µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-43 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	235A (Tj)	4.5V, 10V	2.2V @ 94µA	114 nC @ 10 V	8193 pF @ 30 V	±20V	-	167W (Tc)	1.5mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-43	8-PowerTDFN
DMP2165UW-13	Diodes Incorporated	MOSFET P-CH 20V 2.5A SOT323 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	1.8V, 4.5V	1V @ 250µA	3.5 nC @ 4.5 V	335 pF @ 15 V	±12V	-	500mW (Ta)	90mOhm @ 1.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323