Page 1286 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD60R600P6
Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,976
IPP21N03L G
Infineon Technologies

MOSFET N-CH TO-220

Package: TO-220-3

Stock6,336
IRF7828PBF
Infineon Technologies

MOSFET N-CH 30V 13.6A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,880
IRL1004STRL
Infineon Technologies

MOSFET N-CH 40V 130A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,184
IXFJ15N100Q
IXYS

MOSFET N-CH TO-220

Package: -

Stock2,336
NTMFS4701NT3G
ON Semiconductor

MOSFET N-CH 30V 7.7A SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,832
FQPF7N80
Fairchild/ON Semiconductor

MOSFET N-CH 800V 3.8A TO-220F

Package: TO-220-3 Full Pack

Stock24,108
STP8NS25FP
STMicroelectronics

MOSFET N-CH 250V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock54,972
IXFR20N80P
IXYS

MOSFET N-CH 800V 11A ISOPLUS247

Package: ISOPLUS247?

Stock2,560
IRFBC30ASTRLPBF
Vishay Siliconix

MOSFET N-CH 600V 3.6A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock326,400
RJK5030DPP-M0#T2
Renesas Electronics America

MOSFET N-CH 500V 5A TO220

Package: TO-220-3 Full Pack

Stock6,464
IRFR9220TRRPBF
Vishay Siliconix

MOSFET P-CH 200V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,784
AOWF10N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 10A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,632
NVTFS5824NLTWG
ON Semiconductor

MOSFET N-CH 60V 20A U8FL

Package: 8-PowerWDFN

Stock2,528
SIHF12N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 12A TO220 FULLP

Package: TO-220-3 Full Pack

Stock2,864
FDB8870
Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock35,412
BSC052N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 95A 8TDSON

Package: 8-PowerTDFN

Stock3,504
BUK7Y59-60EX
Nexperia USA Inc.

MOSFET N-CH 60V 17A LFPAK

Package: SC-100, SOT-669

Stock4,208
STI57N65M5
STMicroelectronics

MOSFET N-CH 650V 42A I2PAK-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock60,000
STU10NM60N
STMicroelectronics

MOSFET N-CH 600V 10A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock648,480

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD60R600P6	Infineon Technologies	MOSFET N-CH 600V 7.3A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,976	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	-	12nC @ 10V	557pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP21N03L G	Infineon Technologies	MOSFET N-CH TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,336	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO-220-3	TO-220-3
IRF7828PBF	Infineon Technologies	MOSFET N-CH 30V 13.6A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,880	MOSFET (Metal Oxide)	30V	13.6A (Ta)	4.5V	1V @ 250µA	14nC @ 5V	1010pF @ 15V	±20V	-	2.5W (Ta)	12.5 mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRL1004STRL	Infineon Technologies	MOSFET N-CH 40V 130A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,184	MOSFET (Metal Oxide)	40V	130A (Tc)	4.5V, 10V	1V @ 250µA	100nC @ 4.5V	5330pF @ 25V	±16V	-	3.8W (Ta), 200W (Tc)	6.5 mOhm @ 78A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFJ15N100Q	IXYS	MOSFET N-CH TO-220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,336	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMFS4701NT3G	ON Semiconductor	MOSFET N-CH 30V 7.7A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,832	MOSFET (Metal Oxide)	30V	7.7A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 4.5V	1280pF @ 24V	±20V	-	900mW (Ta)	8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FQPF7N80	Fairchild/ON Semiconductor	MOSFET N-CH 800V 3.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock24,108	MOSFET (Metal Oxide)	800V	3.8A (Tc)	10V	5V @ 250µA	52nC @ 10V	1850pF @ 25V	±30V	-	56W (Tc)	1.5 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STP8NS25FP	STMicroelectronics	MOSFET N-CH 250V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock54,972	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4V @ 250µA	51.8nC @ 10V	770pF @ 25V	±20V	-	30W (Tc)	450 mOhm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IXFR20N80P	IXYS	MOSFET N-CH 800V 11A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	Package: ISOPLUS247?	Stock2,560	MOSFET (Metal Oxide)	800V	11A (Tc)	10V	5V @ 4mA	85nC @ 10V	4680pF @ 25V	±30V	-	166W (Tc)	500 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IRFBC30ASTRLPBF	Vishay Siliconix	MOSFET N-CH 600V 3.6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock326,400	MOSFET (Metal Oxide)	600V	3.6A (Tc)	10V	4.5V @ 250µA	23nC @ 10V	510pF @ 25V	±30V	-	74W (Tc)	2.2 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK5030DPP-M0#T2	Renesas Electronics America	MOSFET N-CH 500V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28.5W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,464	MOSFET (Metal Oxide)	500V	5A (Ta)	10V	-	13nC @ 10V	550pF @ 25V	±30V	-	28.5W (Tc)	1.6 Ohm @ 2A, 10V	150°C (TJ)	Through Hole	TO-220FL	TO-220-3 Full Pack
IRFR9220TRRPBF	Vishay Siliconix	MOSFET P-CH 200V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,784	MOSFET (Metal Oxide)	200V	3.6A (Tc)	10V	4V @ 250µA	20nC @ 10V	340pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AOWF10N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 10A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,632	MOSFET (Metal Oxide)	650V	10A (Tc)	10V	4.5V @ 250µA	33nC @ 10V	1645pF @ 25V	±30V	-	25W (Tc)	1 Ohm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Long Leads, I2Pak, TO-262AA
NVTFS5824NLTWG	ON Semiconductor	MOSFET N-CH 60V 20A U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 20.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock2,528	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	2.5V @ 250µA	16nC @ 10V	850pF @ 25V	±20V	-	3.2W (Ta), 57W (Tc)	20.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
SIHF12N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 12A TO220 FULLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 937pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,864	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	58nC @ 10V	937pF @ 100V	±30V	-	33W (Tc)	380 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
FDB8870	Fairchild/ON Semiconductor	MOSFET N-CH 30V 23A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 132nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock35,412	MOSFET (Metal Oxide)	30V	23A (Ta), 160A (Tc)	4.5V, 10V	2.5V @ 250µA	132nC @ 10V	5200pF @ 15V	±20V	-	160W (Tc)	3.9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSC052N08NS5ATMA1	Infineon Technologies	MOSFET N-CH 80V 95A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 47.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,504	MOSFET (Metal Oxide)	80V	95A (Tc)	6V, 10V	3.8V @ 49µA	40nC @ 10V	2900pF @ 40V	±20V	-	2.5W (Ta), 83W (Tc)	5.2 mOhm @ 47.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BUK7Y59-60EX	Nexperia USA Inc.	MOSFET N-CH 60V 17A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 494pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 59 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,208	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 1mA	7.8nC @ 10V	494pF @ 25V	±20V	-	37W (Tc)	59 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STI57N65M5	STMicroelectronics	MOSFET N-CH 650V 42A I2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock60,000	MOSFET (Metal Oxide)	650V	42A (Tc)	10V	5V @ 250µA	98nC @ 10V	4200pF @ 100V	±25V	-	250W (Tc)	63 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STU10NM60N	STMicroelectronics	MOSFET N-CH 600V 10A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock648,480	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 50V	±25V	-	70W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDMA86251	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2.4A 6-MLP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 363pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 175 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock22,902	MOSFET (Metal Oxide)	150V	2.4A (Ta)	6V, 10V	4V @ 250µA	5.8nC @ 10V	363pF @ 75V	±20V	-	2.4W (Ta)	175 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-WDFN Exposed Pad
DMP2305UVT-7	Diodes Incorporated	MOSFET P-CH 20V 4.23A TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 727pF @ 20V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock25,656	MOSFET (Metal Oxide)	20V	4.23A (Ta)	1.8V, 4.5V	900mV @ 250µA	7.6nC @ 4.5V	727pF @ 20V	±8V	-	1.25W (Ta)	60 mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
AOB600A70FL	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 8.5A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	8.5A (Tc)	10V	4V @ 250µA	14.5 nC @ 10 V	900 pF @ 100 V	±20V	-	104W (Tc)	600mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDD86567-F085	onsemi	MOSFET N-CH 60V 100A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,582	MOSFET (Metal Oxide)	60 V	100A (Tc)	10V	4V @ 250µA	82 nC @ 10 V	4950 pF @ 30 V	±20V	-	227W (Tj)	3.2mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
RQA0002DNSTB-E	Renesas	RQA0002DNS - N CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 16 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 750mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 0 V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 2-HWSON (5x4) Package / Case: 3-DFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	16 V	3.8A (Ta)	-	750mV @ 1mA	-	102 pF @ 0 V	±5V	-	15W (Tc)	-	150°C	Surface Mount	2-HWSON (5x4)	3-DFN Exposed Pad
IXFK240N25X3	IXYS	MOSFET N-CH 250V 240A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	240A (Tc)	10V	4.5V @ 8mA	345 nC @ 10 V	23800 pF @ 25 V	±20V	-	1250W (Tc)	5mOhm @ 120A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
PJMF280N60E1_T0_00001	Panjit International Inc.	600V SUPER JUNCITON MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,916	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	4V @ 250µA	27 nC @ 10 V	926 pF @ 400 V	±30V	-	34W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
EPC2252	EPC	TRANSGAN 80V.011OHM AECQ101 9BGA FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock110,010	GaNFET (Gallium Nitride)	80 V	8.2A (Ta)	-	2.5V @ 2.5mA	4.3 nC @ 5 V	576 pF @ 50 V	+6V, -4V	-	-	11mOhm @ 11A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die