Page 1287 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPD30N06S2-23
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock190,608
IRFP048N
Infineon Technologies

MOSFET N-CH 55V 64A TO-247AC

Package: TO-247-3

Stock7,744
IXTA240N055T
IXYS

MOSFET N-CH 55V 240A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,416
FQB14N30TM
Fairchild/ON Semiconductor

MOSFET N-CH 300V 14.4A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock1,555,092
ZVP3306ASTZ
Diodes Incorporated

MOSFET P-CH 60V 0.16A TO92-3

Package: E-Line-3

Stock7,600
TK10A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 10A TO-220SIS

Package: TO-220-3 Full Pack

Stock6,656
IRLR120TRL
Vishay Siliconix

MOSFET N-CH 100V 7.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,880
STDV5804NT4G
ON Semiconductor

MOSFET N-CH 40V 69A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,928
DMN2009LSS-13
Diodes Incorporated

MOSFET N-CH 20V 12A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock224,940
PMPB29XNE,115
Nexperia USA Inc.

MOSFET N-CH 30V 5A 6DFN

Package: 6-UDFN Exposed Pad

Stock6,768
DMN63D1LW-13
Diodes Incorporated

MOSFET N-CH 60V 0.38A SOT323

Package: SC-70, SOT-323

Stock6,432
STU2N95K5
STMicroelectronics

MOSFET N-CH 950V 2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,592
FQPF22N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 12A TO-220F

Package: TO-220-3 Full Pack

Stock254,112
CSD16570Q5BT
Texas Instruments

MOSFET N-CH 25V 100A 8VSON

Package: 8-PowerTDFN

Stock2,704
FDBL0110N60
Fairchild/ON Semiconductor

MOSFET N-CH 60V 300A

Package: 8-PowerSFN

Stock3,936
FDN86265P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 0.8A 3SSOT

Package: TO-236-3, SC-59, SOT-23-3

Stock6,512
IRFS7730PBF
Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,496
IRL640STRLPBF
Vishay Siliconix

MOSFET N-CH 200V 17A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock15,240
CEDM8004VL-TR-PBFREE
Central Semiconductor Corp

MOSFET P-CH 30V 450MA SOT883VL

Package: -

Stock36,708
RTR030P02HZGTL
Rohm Semiconductor

MOSFET P-CH 20V 3A TSMT3

Package: -

Stock6,483

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPD30N06S2-23	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 23 mOhm @ 21A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock190,608	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 50µA	32nC @ 10V	1250pF @ 25V	±20V	-	-	23 mOhm @ 21A, 10V	-	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFP048N	Infineon Technologies	MOSFET N-CH 55V 64A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,744	MOSFET (Metal Oxide)	55V	64A (Tc)	10V	4V @ 250µA	89nC @ 10V	1900pF @ 25V	±20V	-	140W (Tc)	16 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IXTA240N055T	IXYS	MOSFET N-CH 55V 240A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,416	MOSFET (Metal Oxide)	55V	240A (Tc)	10V	4V @ 250µA	170nC @ 10V	7600pF @ 25V	±20V	-	480W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQB14N30TM	Fairchild/ON Semiconductor	MOSFET N-CH 300V 14.4A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 147W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock1,555,092	MOSFET (Metal Oxide)	300V	14.4A (Tc)	10V	5V @ 250µA	40nC @ 10V	1360pF @ 25V	±30V	-	3.13W (Ta), 147W (Tc)	290 mOhm @ 7.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ZVP3306ASTZ	Diodes Incorporated	MOSFET P-CH 60V 0.16A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 14 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock7,600	MOSFET (Metal Oxide)	60V	160mA (Ta)	10V	3.5V @ 1mA	-	50pF @ 18V	±20V	-	625mW (Ta)	14 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
TK10A50D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 10A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,656	MOSFET (Metal Oxide)	500V	10A (Ta)	10V	4V @ 1mA	20nC @ 10V	1050pF @ 25V	±30V	-	45W (Tc)	720 mOhm @ 5A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
IRLR120TRL	Vishay Siliconix	MOSFET N-CH 100V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 4.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,880	MOSFET (Metal Oxide)	100V	7.7A (Tc)	4V, 5V	2V @ 250µA	12nC @ 5V	490pF @ 25V	±10V	-	2.5W (Ta), 42W (Tc)	270 mOhm @ 4.6A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STDV5804NT4G	ON Semiconductor	MOSFET N-CH 40V 69A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,928	MOSFET (Metal Oxide)	40V	69A (Tc)	5V, 10V	3.5V @ 250µA	45nC @ 10V	2850pF @ 25V	±20V	-	71W (Tc)	8.5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN2009LSS-13	Diodes Incorporated	MOSFET N-CH 20V 12A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2555pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock224,940	MOSFET (Metal Oxide)	20V	12A (Ta)	2.5V, 10V	1.2V @ 250µA	58.3nC @ 10V	2555pF @ 10V	±12V	-	2W (Ta)	8 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
PMPB29XNE,115	Nexperia USA Inc.	MOSFET N-CH 30V 5A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock6,768	MOSFET (Metal Oxide)	30V	5A (Ta)	1.8V, 4.5V	900mV @ 250µA	18.6nC @ 4.5V	1150pF @ 15V	±12V	-	1.7W (Ta), 12.5W (Tc)	33 mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
DMN63D1LW-13	Diodes Incorporated	MOSFET N-CH 60V 0.38A SOT323 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock6,432	MOSFET (Metal Oxide)	60V	380mA (Ta)	5V, 10V	2.5V @ 1mA	0.3nC @ 4.5V	30pF @ 25V	±20V	-	310mW (Ta)	2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
STU2N95K5	STMicroelectronics	MOSFET N-CH 950V 2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 105pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,592	MOSFET (Metal Oxide)	950V	2A (Tc)	10V	5V @ 100µA	10nC @ 10V	105pF @ 100V	30V	-	45W (Tc)	5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
FQPF22N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 12A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock254,112	MOSFET (Metal Oxide)	300V	12A (Tc)	10V	5V @ 250µA	60nC @ 10V	2200pF @ 25V	±30V	-	56W (Tc)	160 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
CSD16570Q5BT	Texas Instruments	MOSFET N-CH 25V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock2,704	MOSFET (Metal Oxide)	25V	100A (Ta)	4.5V, 10V	1.9V @ 250µA	250nC @ 10V	14000pF @ 12V	±20V	-	3.2W (Ta), 195W (Tc)	0.59 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
FDBL0110N60	Fairchild/ON Semiconductor	MOSFET N-CH 60V 300A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13650pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 429W (Tj) Rds On (Max) @ Id, Vgs: 1.1 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	Package: 8-PowerSFN	Stock3,936	MOSFET (Metal Oxide)	60V	300A (Tc)	10V	4V @ 250µA	220nC @ 10V	13650pF @ 30V	±20V	-	429W (Tj)	1.1 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FDN86265P	Fairchild/ON Semiconductor	MOSFET P-CH 150V 0.8A 3SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 800mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,512	MOSFET (Metal Oxide)	150V	800mA (Ta)	6V, 10V	4V @ 250µA	4.1nC @ 10V	210pF @ 75V	±25V	-	1.5W (Ta)	1.2 Ohm @ 800mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT-3	TO-236-3, SC-59, SOT-23-3
IRFS7730PBF	Infineon Technologies	MOSFET N-CH 75V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,496	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	3.7V @ 250µA	407nC @ 10V	13660pF @ 25V	±20V	-	375W (Tc)	2.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRL640STRLPBF	Vishay Siliconix	MOSFET N-CH 200V 17A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock15,240	MOSFET (Metal Oxide)	200V	17A (Tc)	4V, 5V	2V @ 250µA	66nC @ 5V	1800pF @ 25V	±10V	-	3.1W (Ta), 125W (Tc)	180 mOhm @ 10A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CEDM8004VL-TR-PBFREE	Central Semiconductor Corp	MOSFET P-CH 30V 450MA SOT883VL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.88 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 100mW (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-883VL Package / Case: SC-101, SOT-883	Package: -	Stock36,708	MOSFET (Metal Oxide)	30 V	450mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.88 nC @ 4.5 V	55 pF @ 25 V	8V	-	100mW (Ta)	1.1Ohm @ 430mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	SOT-883VL	SC-101, SOT-883
RTR030P02HZGTL	Rohm Semiconductor	MOSFET P-CH 20V 3A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 34µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock6,483	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	2V @ 34µA	9.3 nC @ 4.5 V	840 pF @ 10 V	±12V	-	700mW (Ta)	75mOhm @ 3A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
DMP2067LVT-7	Diodes Incorporated	MOSFET P-CH 20V 4.2A TSOT26 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock1,356	MOSFET (Metal Oxide)	20 V	4.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	28 nC @ 8 V	1575 pF @ 10 V	±8V	-	1.2W (Ta)	45mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
IPB034N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	80A (Tc)	4.5V, 10V	2.2V @ 250µA	51 nC @ 10 V	5300 pF @ 15 V	±20V	-	94W (Tc)	3.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
STL305N4LF8AG	STMicroelectronics	POWERFLAT 5X6 WF FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCB70N10YA-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2298 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	70A (Tc)	4.5V, 10V	3V @ 250µA	42 nC @ 10 V	2298 pF @ 25 V	±20V	-	125W	8.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
DMP2900UW-13	Diodes Incorporated	MOSFET BVDSS: 8V-24V SOT323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 300mW Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	600mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.7 nC @ 4.5 V	49 pF @ 16 V	±6V	-	300mW	750mOhm @ 430mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
UPA2782GR-E1-A	Renesas	UPA2782GR-E1-A - SWITCHINGN-CHAN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4V, 10V	2.5V @ 1mA	7.1 nC @ 5 V	660 pF @ 10 V	±20V	-	2W (Ta)	15mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.173", 4.40mm Width)
MCP130N10YB-BP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W Rds On (Max) @ Id, Vgs: 5.5mOhm @ 65A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	130A (Tc)	4.5V, 10V	2.5V @ 250µA	68 nC @ 10 V	4450 pF @ 50 V	±20V	-	310W	5.5mOhm @ 65A, 10V	-55°C ~ 150°C	Through Hole	TO-220AB	TO-220-3
SUP60020E-GE3	Vishay Siliconix	MOSFET N-CH 80V 150A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock339	MOSFET (Metal Oxide)	80 V	150A (Tc)	7.5V, 10V	4V @ 250µA	227 nC @ 10 V	10680 pF @ 40 V	±20V	-	375W (Tc)	2.4mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3