Page 1284 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR3505TRPBF
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock258,684
IRF7322D1TR
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,916
SI3456CDV-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 7.7A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock491,712
SFM9110TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 1A SOT-223

Package: TO-261-4, TO-261AA

Stock14,400
HUFA76639S3S
Fairchild/ON Semiconductor

MOSFET N-CH 100V 50A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,720
RSS140N03TB
Rohm Semiconductor

MOSFET N-CH 30V 14A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,976
IRF730L
Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,568
FKP253
Sanken

MOSFET N-CH 250V 20A TO-220F

Package: TO-220-3 Full Pack

Stock9,636
IXFH16N120P
IXYS

MOSFET N-CH 1200V 16A TO-247

Package: TO-247-3

Stock106,380
IPD031N06L3 G
Infineon Technologies

MOSFET N-CH 60V 100A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,760
STL10N60M2
STMicroelectronics

MOSFET N-CH 600V 5.5A PWRFLAT56

Package: 8-PowerVDFN

Stock3,120
FCP16N60N
Fairchild/ON Semiconductor

MOSFET N-CH 600V 16A TO-220-3

Package: TO-220-3

Stock218,460
ZXM62N03GTA
Diodes Incorporated

MOSFET N-CH 30V ENHANCE SOT223

Package: TO-261-4, TO-261AA

Stock151,884
CSD17382F4T
Texas Instruments

MOSFET N-CH 30V 2.3A PICOSTAR

Package: 3-XFDFN

Stock30,054
DMP6110SSS-13
Diodes Incorporated

MOSFET P-CH 60V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock23,316
NTD6414ANT4G
ON Semiconductor

MOSFET N-CH 100V 32A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,396
IXFN180N10
IXYS

MOSFET N-CH 100V 180A SOT-227B

Package: SOT-227-4, miniBLOC

Stock19,464
G15N06K
Goford Semiconductor

N-CH, 60V,15A,RD(MAX)<45M@10V,RD

Package: -

Stock36,903
DMP4009SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

Package: -

Request a Quote
60N06
Goford Semiconductor

N60V,RD(MAX)<17M@10V,RD(MAX)<21M

Package: -

Stock6,624

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3505TRPBF	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2030pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock258,684	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 250µA	93nC @ 10V	2030pF @ 25V	±20V	-	140W (Tc)	13 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7322D1TR	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,916	MOSFET (Metal Oxide)	20V	5.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI3456CDV-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 7.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock491,712	MOSFET (Metal Oxide)	30V	7.7A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	460pF @ 15V	±20V	-	2W (Ta), 3.3W (Tc)	34 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
SFM9110TF	Fairchild/ON Semiconductor	MOSFET P-CH 100V 1A SOT-223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.52W (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock14,400	MOSFET (Metal Oxide)	100V	1A (Ta)	10V	4V @ 250µA	10nC @ 10V	335pF @ 25V	±30V	-	2.52W (Ta)	1.2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
HUFA76639S3S	Fairchild/ON Semiconductor	MOSFET N-CH 100V 50A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 51A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,720	MOSFET (Metal Oxide)	100V	51A (Tc)	4.5V, 10V	3V @ 250µA	86nC @ 10V	2400pF @ 25V	±16V	-	180W (Tc)	26 mOhm @ 51A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RSS140N03TB	Rohm Semiconductor	MOSFET N-CH 30V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 14A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,976	MOSFET (Metal Oxide)	30V	14A (Ta)	4V, 10V	2.5V @ 1mA	37nC @ 5V	3150pF @ 10V	20V	-	2W (Ta)	6.7 mOhm @ 14A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IRF730L	Vishay Siliconix	MOSFET N-CH 400V 5.5A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,568	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	22nC @ 10V	600pF @ 25V	±20V	-	-	1 Ohm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
FKP253	Sanken	MOSFET N-CH 250V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock9,636	MOSFET (Metal Oxide)	250V	20A (Ta)	10V	4.5V @ 1mA	-	1600pF @ 25V	±30V	-	40W (Tc)	95 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3 Full Pack
IXFH16N120P	IXYS	MOSFET N-CH 1200V 16A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 660W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock106,380	MOSFET (Metal Oxide)	1200V	16A (Tc)	10V	6.5V @ 1mA	120nC @ 10V	6900pF @ 25V	±30V	-	660W (Tc)	950 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
IPD031N06L3 G	Infineon Technologies	MOSFET N-CH 60V 100A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,760	MOSFET (Metal Oxide)	60V	100A (Tc)	4.5V, 10V	2.2V @ 93µA	79nC @ 4.5V	13000pF @ 30V	±20V	-	167W (Tc)	3.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
STL10N60M2	STMicroelectronics	MOSFET N-CH 600V 5.5A PWRFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock3,120	MOSFET (Metal Oxide)	600V	5.5A (Tc)	10V	4V @ 250µA	13.5nC @ 10V	400pF @ 100V	±25V	-	48W (Tc)	660 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
FCP16N60N	Fairchild/ON Semiconductor	MOSFET N-CH 600V 16A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 134.4W (Tc) Rds On (Max) @ Id, Vgs: 199 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock218,460	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 250µA	52.3nC @ 10V	2170pF @ 100V	±30V	-	134.4W (Tc)	199 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
ZXM62N03GTA	Diodes Incorporated	MOSFET N-CH 30V ENHANCE SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock151,884	MOSFET (Metal Oxide)	30V	3.4A (Ta), 4.7A (Tc)	4.5V, 10V	1V @ 250µA	9.6nC @ 10V	380pF @ 25V	±20V	-	2W (Ta)	110 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
CSD17382F4T	Texas Instruments	MOSFET N-CH 30V 2.3A PICOSTAR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 64 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock30,054	MOSFET (Metal Oxide)	30V	2.3A (Ta)	1.8V, 8V	1.2V @ 250µA	2.7nC @ 4.5V	347pF @ 15V	10V	-	500mW (Ta)	64 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
DMP6110SSS-13	Diodes Incorporated	MOSFET P-CH 60V 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock23,316	MOSFET (Metal Oxide)	60V	-	4.5V, 10V	3V @ 250µA	19.4nC @ 10V	1030pF @ 30V	±20V	-	1.5W (Ta)	110 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTD6414ANT4G	ON Semiconductor	MOSFET N-CH 100V 32A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,396	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 250µA	40nC @ 10V	1450pF @ 25V	±20V	-	100W (Tc)	37 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFN180N10	IXYS	MOSFET N-CH 100V 180A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock19,464	MOSFET (Metal Oxide)	100V	180A	10V	4V @ 8mA	360nC @ 10V	9100pF @ 25V	±20V	-	600W (Tc)	8 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
G15N06K	Goford Semiconductor	N-CH, 60V,15A,RD(MAX)<45M@10V,RD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock36,903	MOSFET (Metal Oxide)	60 V	15A (Tc)	4.5V, 10V	3V @ 250µA	25 nC @ 10 V	763 pF @ 30 V	±20V	-	40W (Tc)	45mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP4009SPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI506 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	79A (Tc)	4.5V, 10V	2.5V @ 250µA	112 nC @ 10 V	5697 pF @ 20 V	±20V	-	3.9W (Ta), 119W (Tc)	11mOhm @ 9.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
60N06	Goford Semiconductor	N60V,RD(MAX)<17M@10V,RD(MAX)<21M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,624	MOSFET (Metal Oxide)	60 V	50A (Tc)	4.5V, 10V	2V @ 250µA	50 nC @ 10 V	2050 pF @ 30 V	±20V	-	69W (Tc)	17mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP3013SFK-7	Diodes Incorporated	MOSFET P-CH 30V DFN2523-6 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: U-DFN2523-6 Package / Case: 6-PowerUDFN	Package: -	Stock8,970	-	-	10.5A (Ta)	-	-	-	-	-	-	-	-	-	Surface Mount	U-DFN2523-6	6-PowerUDFN
NTMTS001N06CTXG	onsemi	MOSFET N-CH 60V 53.7A/376A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 376A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 244W (Tc) Rds On (Max) @ Id, Vgs: 0.91mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock4,740	MOSFET (Metal Oxide)	60 V	53.7A (Ta), 376A (Tc)	10V	4V @ 250µA	113 nC @ 10 V	8705 pF @ 30 V	±20V	-	5W (Ta), 244W (Tc)	0.91mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
H5N2007FN-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6030JNZ4C13	Rohm Semiconductor	MOSFET N-CH 600V 30A TO247G FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 7V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247G Package / Case: TO-247-3	Package: -	Stock1,566	MOSFET (Metal Oxide)	600 V	30A (Tc)	15V	7V @ 5.5mA	74 nC @ 15 V	2500 pF @ 100 V	±30V	-	370W (Tc)	143mOhm @ 15A, 15V	-55°C ~ 150°C (TJ)	Through Hole	TO-247G	TO-247-3
AP2323GN-HF-ML	MOSLEADER	Single P -20V -5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM032NH04CR-RLG	Taiwan Semiconductor Corporation	40V, 81A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2896 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	25A (Ta), 81A (Tc)	7V, 10V	3.6V @ 250µA	45 nC @ 10 V	2896 pF @ 25 V	±20V	-	115W (Tc)	3.2mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PDFNU (5x6)	8-PowerTDFN
SIA4265EDJ-T1-GE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 0 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.9W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock11,628	MOSFET (Metal Oxide)	20 V	7.8A (Ta), 9A (Tc)	1.8V, 4.5V	1V @ 250µA	36 nC @ 8 V	1180 pF @ 0 V	±8V	-	2.9W (Ta), 15.6W (Tc)	32mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
DMN2040UQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT23 T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6A (Ta)	2.5V, 4.5V	1.2V @ 250µA	7.5 nC @ 4.5 V	667 pF @ 10 V	±12V	-	800mW (Ta)	25mOhm @ 8.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3