Page 1285 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU3708PBF
Infineon Technologies

MOSFET N-CH 30V 61A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,176
IRL3502SPBF
Infineon Technologies

MOSFET N-CH 20V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock39,288
NTB90N02T4G
ON Semiconductor

MOSFET N-CH 24V 90A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock193,560
IXFV14N80PS
IXYS

MOSFET N-CH 800V 14A PLUS220-S

Package: PLUS-220SMD

Stock2,288
PHD23NQ10T,118
NXP

MOSFET N-CH 100V 23A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,384
FQAF12N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.8A TO-3PF

Package: SC-94

Stock5,040
MTD5P06VT4
ON Semiconductor

MOSFET P-CH 60V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock83,256
AUIRL7736M2TR
Infineon Technologies

MOSFET N-CH 40V 112A DIRECTFET

Package: DirectFET? Isometric M4

Stock6,400
IPS70R600CEAKMA2
Infineon Technologies

CONSUMER

Package: -

Stock6,544
IRFHM8342TRPBF
Infineon Technologies

MOSFET N-CH 30V 10A 8PQFN

Package: 8-PowerTDFN

Stock6,816
RCX330N25
Rohm Semiconductor

MOSFET N-CH 250V 33A TO-220FM

Package: TO-220-2 Full Pack

Stock78,384
SUD50P06-15L-T4-E3
Vishay Siliconix

MOSFET P-CH 60V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,432
SI5441BDC-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 4.4A 1206-8

Package: 8-SMD, Flat Lead

Stock42,000
AOI4126
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 7.5A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock179,268
SI2301-TP
Micro Commercial Co

MOSFET P-CH 20V 2.8A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock186,000
SQ4431EY-T1_GE3
Vishay Siliconix

MOSFET P-CH 30V 10.8A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,216
NTTFS4928NTAG
ON Semiconductor

MOSFET N-CH 30V 7.3A 8WDFN

Package: 8-PowerWDFN

Stock352,212
BUK6218-40C,118
Nexperia USA Inc.

MOSFET N-CH 40V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock51,006
STF40NF06
STMicroelectronics

MOSFET N-CH 60V 23A TO220FP

Package: TO-220-3 Full Pack

Stock502,836
FQD1N60CTM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock252,396

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU3708PBF	Infineon Technologies	MOSFET N-CH 30V 61A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,176	MOSFET (Metal Oxide)	30V	61A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRL3502SPBF	Infineon Technologies	MOSFET N-CH 20V 110A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock39,288	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB90N02T4G	ON Semiconductor	MOSFET N-CH 24V 90A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock193,560	MOSFET (Metal Oxide)	24V	90A (Ta)	4.5V, 10V	3V @ 250µA	29nC @ 4.5V	2120pF @ 20V	±20V	-	85W (Tc)	5.8 mOhm @ 90A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFV14N80PS	IXYS	MOSFET N-CH 800V 14A PLUS220-S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,288	MOSFET (Metal Oxide)	800V	14A (Tc)	10V	5.5V @ 4mA	61nC @ 10V	3900pF @ 25V	±30V	-	400W (Tc)	720 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
PHD23NQ10T,118	NXP	MOSFET N-CH 100V 23A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1187pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,384	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 1mA	22nC @ 10V	1187pF @ 25V	±20V	-	100W (Tc)	70 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQAF12N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.8A TO-3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: SC-94	Package: SC-94	Stock5,040	MOSFET (Metal Oxide)	600V	7.8A (Tc)	10V	5V @ 250µA	54nC @ 10V	1900pF @ 25V	±30V	-	100W (Tc)	700 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PF	SC-94
MTD5P06VT4	ON Semiconductor	MOSFET P-CH 60V 5A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock83,256	MOSFET (Metal Oxide)	60V	5A (Tc)	10V	4V @ 250µA	20nC @ 10V	510pF @ 25V	±15V	-	2.1W (Ta), 40W (Tc)	450 mOhm @ 2.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRL7736M2TR	Infineon Technologies	MOSFET N-CH 40V 112A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5055pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? M4 Package / Case: DirectFET? Isometric M4	Package: DirectFET? Isometric M4	Stock6,400	MOSFET (Metal Oxide)	40V	179A (Tc)	4.5V, 10V	2.5V @ 150µA	78nC @ 4.5V	5055pF @ 25V	±16V	-	2.5W (Ta), 63W (Tc)	3 mOhm @ 67A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET? M4	DirectFET? Isometric M4
IPS70R600CEAKMA2	Infineon Technologies	CONSUMER FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,544	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFHM8342TRPBF	Infineon Technologies	MOSFET N-CH 30V 10A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 20W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,816	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.35V @ 25µA	7.5nC @ 4.5V	560pF @ 25V	±20V	-	2.6W (Ta), 20W (Tc)	16 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerTDFN
RCX330N25	Rohm Semiconductor	MOSFET N-CH 250V 33A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock78,384	MOSFET (Metal Oxide)	250V	33A (Ta)	10V	-	-	-	±30V	-	2.23W (Ta), 40W (Tc)	-	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
SUD50P06-15L-T4-E3	Vishay Siliconix	MOSFET P-CH 60V 50A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,432	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	3V @ 250µA	165nC @ 10V	4950pF @ 25V	±20V	-	3W (Ta), 136W (Tc)	15 mOhm @ 17A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SI5441BDC-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 4.4A 1206-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 1206-8 ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock42,000	MOSFET (Metal Oxide)	20V	4.4A (Ta)	2.5V, 4.5V	1.4V @ 250µA	22nC @ 4.5V	-	±12V	-	1.3W (Ta)	45 mOhm @ 4.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	1206-8 ChipFET?	8-SMD, Flat Lead
AOI4126	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 7.5A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 3W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock179,268	MOSFET (Metal Oxide)	100V	7.5A (Ta), 43A (Tc)	7V, 10V	4V @ 250µA	42nC @ 10V	2200pF @ 50V	±25V	-	3W (Ta), 100W (Tc)	24 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
SI2301-TP	Micro Commercial Co	MOSFET P-CH 20V 2.8A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.8A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock186,000	MOSFET (Metal Oxide)	20V	2.8A (Ta)	2.5V, 4.5V	450mV @ 250µA (Min)	14.5nC @ 4.5V	880pF @ 6V	±8V	-	1.25W (Ta)	120 mOhm @ 2.8A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SQ4431EY-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 10.8A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1265pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,216	MOSFET (Metal Oxide)	30V	10.8A (Tc)	10V	2.5V @ 250µA	25nC @ 10V	1265pF @ 15V	±20V	-	6W (Tc)	30 mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTTFS4928NTAG	ON Semiconductor	MOSFET N-CH 30V 7.3A 8WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 810mW (Ta), 20.8W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock352,212	MOSFET (Metal Oxide)	30V	7.3A (Ta), 37A (Tc)	4.5V, 10V	2.2V @ 250µA	16nC @ 10V	913pF @ 15V	±20V	-	810mW (Ta), 20.8W (Tc)	9 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
BUK6218-40C,118	Nexperia USA Inc.	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock51,006	MOSFET (Metal Oxide)	40V	42A (Tc)	10V	2.8V @ 1mA	22nC @ 10V	1170pF @ 25V	±16V	-	60W (Tc)	16 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STF40NF06	STMicroelectronics	MOSFET N-CH 60V 23A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock502,836	MOSFET (Metal Oxide)	60V	23A (Tc)	10V	4V @ 250µA	32nC @ 10V	920pF @ 25V	±20V	-	30W (Tc)	28 mOhm @ 11.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
FQD1N60CTM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock252,396	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	4V @ 250µA	6.2nC @ 10V	170pF @ 25V	±30V	-	2.5W (Ta), 28W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C456NLWFAFT1G	onsemi	MOSFET N-CH 40V 87A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	40 V	87A (Tc)	4.5V, 10V	2V @ 250µA	18 nC @ 10 V	1600 pF @ 25 V	±20V	-	55W (Tc)	3.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
IRFH5220TR2PBF	Infineon Technologies	MOSFET N-CH 200V 3.8A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	3.8A (Ta), 20A (Tc)	-	5V @ 100µA	30 nC @ 10 V	1380 pF @ 50 V	-	-	-	99.9mOhm @ 5.8A, 10V	-	Surface Mount	PQFN (5x6)	8-VQFN Exposed Pad
SIR120DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 80V 24.7A/106A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock43,413	MOSFET (Metal Oxide)	80 V	24.7A (Ta), 106A (Tc)	7.5V, 10V	3.5V @ 250µA	94 nC @ 10 V	4150 pF @ 40 V	±20V	-	5.4W (Ta), 100W (Tc)	3.55mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PJW5P06A_R2_00001	Panjit International Inc.	60V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock23,406	MOSFET (Metal Oxide)	60 V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	17 nC @ 10 V	879 pF @ 30 V	±20V	-	3.1W (Ta)	68mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STP50N65DM6	STMicroelectronics	MOSFET N-CH 650V 33A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	33A (Tc)	10V	4.75V @ 250µA	52.5 nC @ 10 V	2300 pF @ 100 V	±25V	-	250W (Tc)	91mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BUK7M5R0-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 85A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 85A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 83W Rds On (Max) @ Id, Vgs: 5mOhm @ 85A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: -	Stock17,982	MOSFET (Metal Oxide)	40 V	85A (Tj)	10V	-	22 nC @ 10 V	-	+20V, -10V	-	83W	5mOhm @ 85A, 10V	175°C	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
G2K3N10H	Goford Semiconductor	MOSFET, N-CH,100V, 2A,SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Stock6,795	MOSFET (Metal Oxide)	100 V	2A (Tc)	4.5V, 10V	2V @ 250µA	13 nC @ 10 V	434 pF @ 50 V	±20V	-	2.4W (Tc)	220mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
NVMFS005N10MCLT1G	onsemi	PTNG 100V LL SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 192µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 131W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,783	MOSFET (Metal Oxide)	100 V	18.4A (Ta), 108A (Tc)	4.5V, 10V	3V @ 192µA	55 nC @ 10 V	4100 pF @ 50 V	±20V	-	3.8W (Ta), 131W (Tc)	5.1mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads