Page 132 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFH5220TRPBF
Infineon Technologies

MOSFET N-CH 200V 3.8A PQFN

Package: 8-VQFN Exposed Pad

Stock2,064
BSO4410T
Infineon Technologies

MOSFET N-CH 30V 11.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,472
AOL1208
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock6,544
SI8451DB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V 10.8A MICROFOOT

Package: 6-MICRO FOOT?

Stock6,372
FQD2N60CTF_F080
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1.9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,280
NTMFS4849NT1G
ON Semiconductor

MOSFET N-CH 30V 10.2A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock14,016
FDB7030L_L86Z
Fairchild/ON Semiconductor

MOSFET N-CH 30V 80A TO-263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,136
STB185N55F3
STMicroelectronics

MOSFET N-CH 55V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock780,120
IRF730
STMicroelectronics

MOSFET N-CH 400V 5.5A TO-220

Package: TO-220-3

Stock18,048
SPI21N50C3XKSA1
Infineon Technologies

MOSFET N-CH 560V 21A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,976
IRFB7746PBF
Infineon Technologies

MOSFET N-CH 75V 59A TO220

Package: TO-220-3

Stock4,000
IXKP24N60C5
IXYS

MOSFET N-CH 600V 24A TO220AB

Package: TO-220-3

Stock3,760
IXTQ96N25T
IXYS

MOSFET N-CH 250V 96A TO-3P

Package: TO-3P-3, SC-65-3

Stock390,000
IXFH102N15T
IXYS

MOSFET N-CH 150V 102A TO-247

Package: TO-247-3

Stock4,592
CSD18532Q5BT
Texas Instruments

MOSFET N-CH 60V 23A 8VSON

Package: 8-PowerTDFN

Stock3,952
IRFBA1405PPBF
Infineon Technologies

MOSFET N-CH 55V 174A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock7,104
IRFP9140NPBF
Infineon Technologies

MOSFET P-CH 100V 23A TO-247AC

Package: TO-247-3

Stock5,264
IRFH5250DTRPBF
Infineon Technologies

MOSFET N-CH 25V 40A 8VQFN

Package: 8-PowerVDFN

Stock17,700
TP2640N3-G
Microchip Technology

MOSFET P-CH 400V 0.18A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock20,316
FQNL2N50BTA
Fairchild/ON Semiconductor

MOSFET N-CH 500V 0.35A TO-92-3

Package: TO-226-3, TO-92-3 Long Body (Formed Leads)

Stock34,080

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFH5220TRPBF	Infineon Technologies	MOSFET N-CH 200V 3.8A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 8.3W (Tc) Rds On (Max) @ Id, Vgs: 99.9 mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	Package: 8-VQFN Exposed Pad	Stock2,064	MOSFET (Metal Oxide)	200V	3.8A (Ta), 20A (Tc)	10V	5V @ 100µA	30nC @ 10V	1380pF @ 50V	±20V	-	3.6W (Ta), 8.3W (Tc)	99.9 mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6)	8-VQFN Exposed Pad
BSO4410T	Infineon Technologies	MOSFET N-CH 30V 11.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 42µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,472	MOSFET (Metal Oxide)	30V	11.1A (Ta)	4.5V, 10V	2V @ 42µA	21nC @ 5V	1280pF @ 25V	±20V	-	2.5W (Ta)	13 mOhm @ 11.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOL1208	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 11A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock6,544	MOSFET (Metal Oxide)	30V	11A (Ta), 50A (Tc)	4.5V, 10V	2.4V @ 250µA	20nC @ 10V	1110pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
SI8451DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V 10.8A MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.77W (Ta), 13W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-Micro Foot? Package / Case: 6-MICRO FOOT?	Package: 6-MICRO FOOT?	Stock6,372	MOSFET (Metal Oxide)	20V	10.8A (Tc)	1.5V, 4.5V	1V @ 250µA	24nC @ 8V	750pF @ 10V	±8V	-	2.77W (Ta), 13W (Tc)	80 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-Micro Foot?	6-MICRO FOOT?
FQD2N60CTF_F080	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1.9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 950mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,280	MOSFET (Metal Oxide)	600V	1.9A (Tc)	10V	4V @ 250µA	12nC @ 10V	235pF @ 25V	±30V	-	2.5W (Ta), 44W (Tc)	4.7 Ohm @ 950mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4849NT1G	ON Semiconductor	MOSFET N-CH 30V 10.2A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 12V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock14,016	MOSFET (Metal Oxide)	30V	10.2A (Ta), 71A (Tc)	4.5V, 11.5V	2.5V @ 250µA	22nC @ 4.5V	2040pF @ 12V	±16V	-	870mW (Ta), 42.4W (Tc)	5.1 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDB7030L_L86Z	Fairchild/ON Semiconductor	MOSFET N-CH 30V 80A TO-263AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,136	MOSFET (Metal Oxide)	30V	80A (Ta)	4.5V, 10V	3V @ 250µA	33nC @ 5V	2440pF @ 15V	±20V	-	68W (Tc)	7 mOhm @ 40A, 10V	-65°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB185N55F3	STMicroelectronics	MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock780,120	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	100nC @ 10V	6800pF @ 25V	±20V	-	330W (Tc)	3.5 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF730	STMicroelectronics	MOSFET N-CH 400V 5.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock18,048	MOSFET (Metal Oxide)	400V	5.5A (Tc)	10V	4V @ 250µA	24nC @ 10V	530pF @ 25V	±20V	-	100W (Tc)	1 Ohm @ 3A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPI21N50C3XKSA1	Infineon Technologies	MOSFET N-CH 560V 21A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,976	MOSFET (Metal Oxide)	560V	21A (Tc)	10V	3.9V @ 1mA	95nC @ 10V	2400pF @ 25V	±20V	-	208W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFB7746PBF	Infineon Technologies	MOSFET N-CH 75V 59A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3049pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,000	MOSFET (Metal Oxide)	75V	59A (Tc)	6V, 10V	3.7V @ 100µA	83nC @ 10V	3049pF @ 25V	±20V	-	99W (Tc)	10.6 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXKP24N60C5	IXYS	MOSFET N-CH 600V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V Vgs (Max): ±20V FET Feature: Super Junction Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 165 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,760	MOSFET (Metal Oxide)	600V	24A (Tc)	10V	3.5V @ 790µA	52nC @ 10V	2000pF @ 100V	±20V	Super Junction	-	165 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTQ96N25T	IXYS	MOSFET N-CH 250V 96A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 29 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock390,000	MOSFET (Metal Oxide)	250V	96A (Tc)	10V	5V @ 1mA	114nC @ 10V	6100pF @ 25V	±30V	-	625W (Tc)	29 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IXFH102N15T	IXYS	MOSFET N-CH 150V 102A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock4,592	MOSFET (Metal Oxide)	150V	102A (Tc)	10V	5V @ 1mA	87nC @ 10V	5220pF @ 25V	±20V	-	455W (Tc)	18 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
CSD18532Q5BT	Texas Instruments	MOSFET N-CH 60V 23A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5070pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,952	MOSFET (Metal Oxide)	60V	100A (Ta)	4.5V, 10V	2.2V @ 250µA	58nC @ 10V	5070pF @ 30V	±20V	-	3.2W (Ta), 156W (Tc)	3.2 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
IRFBA1405PPBF	Infineon Technologies	MOSFET N-CH 55V 174A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 101A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock7,104	MOSFET (Metal Oxide)	55V	174A (Tc)	10V	4V @ 250µA	260nC @ 10V	5480pF @ 25V	±20V	-	330W (Tc)	5 mOhm @ 101A, 10V	-40°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
IRFP9140NPBF	Infineon Technologies	MOSFET P-CH 100V 23A TO-247AC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 117 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock5,264	MOSFET (Metal Oxide)	100V	23A (Tc)	10V	4V @ 250µA	97nC @ 10V	1300pF @ 25V	±20V	-	140W (Tc)	117 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IRFH5250DTRPBF	Infineon Technologies	MOSFET N-CH 25V 40A 8VQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6115pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock17,700	MOSFET (Metal Oxide)	25V	40A (Ta), 100A (Tc)	4.5V, 10V	2.35V @ 150µA	83nC @ 10V	6115pF @ 13V	±20V	-	3.6W (Ta), 156W (Tc)	1.4 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
TP2640N3-G	Microchip Technology	MOSFET P-CH 400V 0.18A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 180mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock20,316	MOSFET (Metal Oxide)	400V	180mA (Tj)	2.5V, 10V	2V @ 1mA	-	300pF @ 25V	±20V	-	1W (Ta)	15 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FQNL2N50BTA	Fairchild/ON Semiconductor	MOSFET N-CH 500V 0.35A TO-92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 175mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)	Package: TO-226-3, TO-92-3 Long Body (Formed Leads)	Stock34,080	MOSFET (Metal Oxide)	500V	350mA (Tc)	10V	3.7V @ 250µA	8nC @ 10V	230pF @ 25V	±30V	-	1.5W (Tc)	5.3 Ohm @ 175mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 Long Body (Formed Leads)
DMP2541UCB9-7	Diodes Incorporated	MOSFET P-CH 25V 3.9A U-WLB1515-9 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V Vgs (Max): -6V FET Feature: - Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-WLB1515-9 Package / Case: 9-UFBGA, WLBGA	Package: -	Request a Quote	MOSFET (Metal Oxide)	25 V	3.9A (Ta)	1.8V, 4.5V	1.1V @ 250µA	7 nC @ 4.5 V	850 pF @ 10 V	-6V	-	940mW (Ta)	40mOhm @ 2A, 4.5V	-55°C ~ 155°C (TJ)	Surface Mount	U-WLB1515-9	9-UFBGA, WLBGA
AM2336N-T1-PF-ML	MOSLEADER	Single N 30V 5.2A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSC019N04LSTATMA1	Infineon Technologies	MOSFET N-CH 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 161A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4060 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	28A (Ta), 161A (Tc)	4.5V, 10V	2V @ 250µA	57 nC @ 10 V	4060 pF @ 20 V	±20V	-	94W (Tc)	1.9mOhm @ 50A, 10V	-55°C ~ 175°C (TA)	-	-	-
PMN30XPEAX	Nexperia USA Inc.	SMALL SIGNAL MOSFET FOR AUTOMOTI FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 660mW (Ta), 7.5W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Stock9,000	MOSFET (Metal Oxide)	20 V	5.4A (Ta)	2.5V, 8V	1.3V @ 250µA	16 nC @ 4.5 V	1025 pF @ 10 V	±12V	-	660mW (Ta), 7.5W (Tc)	33mOhm @ 5.4A, 8V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
FDS6690	Fairchild Semiconductor	SMALL SIGNAL N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	3V @ 250µA	18 nC @ 5 V	1340 pF @ 15 V	±20V	-	1W (Ta)	13.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
2SK1947-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TK7S10N1Z-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,715	MOSFET (Metal Oxide)	100 V	7A (Ta)	10V	4V @ 100µA	7.1 nC @ 10 V	470 pF @ 10 V	±20V	-	50W (Tc)	48mOhm @ 3.5A, 10V	175°C	Surface Mount	DPAK+	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTE66	NTE Electronics, Inc	MOSFET N-CHANNEL 100V 14A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	4V @ 250µA	26 nC @ 10 V	640 pF @ 25 V	±20V	-	77W (Tc)	160mOhm @ 8.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3