Page 130 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFU2307ZPBF
Infineon Technologies

MOSFET N-CH 75V 42A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock44,400
SPD30N06S2-15
Infineon Technologies

MOSFET N-CH 55V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock999,096
AON6404A_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A DFN5X6

Package: 8-PowerSMD, Flat Leads

Stock3,072
SI9434BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock371,460
IRF9630
Vishay Siliconix

MOSFET P-CH 200V 6.5A TO-220AB

Package: TO-220-3

Stock12,360
IXFX32N50
IXYS

MOSFET N-CH 500V 32A PLUS247

Package: TO-247-3

Stock118,140
RJK0603DPN-E0#T2
Renesas Electronics America

MOSFET N-CH 60V 80A TO220

Package: TO-220-3

Stock2,096
NVMFS6B05NLWFT3G
ON Semiconductor

MOSFET N-CH 100V 17A 5DFN

Package: 8-PowerTDFN

Stock4,384
IRLU110
Vishay Siliconix

MOSFET N-CH 100V 4.3A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock135,768
STP9NK70Z
STMicroelectronics

MOSFET N-CH 700V 7.5A TO-220

Package: TO-220-3

Stock153,132
TK39J60W,S1VQ
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,072
IXFX180N25T
IXYS

MOSFET N-CH 250V 180A PLUS247

Package: TO-247-3

Stock7,120
IRF6785MTRPBF
Infineon Technologies

MOSFET N-CH 200V 3.4A DIRECTFET

Package: DirectFET? Isometric MZ

Stock6,672
TK20A60U(Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO-220SIS

Package: TO-220-3 Full Pack

Stock7,440
FDPF51N25YDTU
Fairchild/ON Semiconductor

MOSFET N-CH 250V 51A TO-220F

Package: TO-220-3 Full Pack, Formed Leads

Stock15,420
DMTH6010SK3-13
Diodes Incorporated

MOSFET N-CH 60V 16.3A

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,824
SI4666DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 16.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock69,888
RJK0353DPA-WS-J0B
Renesas Electronics Corporation

MOSFET N-CH 30V 35A WPAK

Package: -

Request a Quote
DMT68M8LFV-13
Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

Package: -

Request a Quote
SQM120N02-1M3L_GE3
Vishay Siliconix

MOSFET N-CH 20V 120A TO263

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFU2307ZPBF	Infineon Technologies	MOSFET N-CH 75V 42A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2190pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock44,400	MOSFET (Metal Oxide)	75V	42A (Tc)	10V	4V @ 100µA	75nC @ 10V	2190pF @ 25V	±20V	-	110W (Tc)	16 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
SPD30N06S2-15	Infineon Technologies	MOSFET N-CH 55V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: P-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock999,096	MOSFET (Metal Oxide)	55V	30A (Tc)	10V	4V @ 80µA	52nC @ 10V	2070pF @ 25V	±20V	-	136W (Tc)	14.7 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	P-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
AON6404A_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 25A DFN5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,072	MOSFET (Metal Oxide)	30V	25A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	40nC @ 10V	5210pF @ 15V	±20V	-	2.3W (Ta), 83W (Tc)	2.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
SI9434BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 4.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock371,460	MOSFET (Metal Oxide)	20V	4.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	18nC @ 4.5V	-	±8V	-	1.3W (Ta)	40 mOhm @ 6.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRF9630	Vishay Siliconix	MOSFET P-CH 200V 6.5A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock12,360	MOSFET (Metal Oxide)	200V	6.5A (Tc)	10V	4V @ 250µA	29nC @ 10V	700pF @ 25V	±20V	-	74W (Tc)	800 mOhm @ 3.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFX32N50	IXYS	MOSFET N-CH 500V 32A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock118,140	MOSFET (Metal Oxide)	500V	32A (Tc)	10V	4V @ 4mA	300nC @ 10V	5450pF @ 25V	±20V	-	360W (Tc)	150 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
RJK0603DPN-E0#T2	Renesas Electronics America	MOSFET N-CH 60V 80A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,096	MOSFET (Metal Oxide)	60V	80A (Ta)	10V	-	57nC @ 10V	4150pF @ 10V	±20V	-	125W (Tc)	5.2 mOhm @ 40A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS6B05NLWFT3G	ON Semiconductor	MOSFET N-CH 100V 17A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 165W (Tc) Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,384	MOSFET (Metal Oxide)	100V	-	4.5V, 10V	3V @ 250µA	6.8nC @ 10V	3980pF @ 25V	±16V	-	3.8W (Ta), 165W (Tc)	5.6 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IRLU110	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock135,768	MOSFET (Metal Oxide)	100V	4.3A (Tc)	4V, 5V	2V @ 250µA	6.1nC @ 5V	250pF @ 25V	±10V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 5V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
STP9NK70Z	STMicroelectronics	MOSFET N-CH 700V 7.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock153,132	MOSFET (Metal Oxide)	700V	7.5A (Tc)	10V	4.5V @ 100µA	68nC @ 10V	1370pF @ 25V	±30V	-	115W (Tc)	1.2 Ohm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TK39J60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 38.8A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.7V @ 1.9mA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V Vgs (Max): ±30V FET Feature: Super Junction Power Dissipation (Max): 270W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,072	MOSFET (Metal Oxide)	600V	38.8A (Ta)	10V	3.7V @ 1.9mA	110nC @ 10V	4100pF @ 300V	±30V	Super Junction	270W (Tc)	65 mOhm @ 19.4A, 10V	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
IXFX180N25T	IXYS	MOSFET N-CH 250V 180A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1390W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,120	MOSFET (Metal Oxide)	250V	180A (Tc)	10V	5V @ 8mA	345nC @ 10V	28000pF @ 25V	±20V	-	1390W (Tc)	12.9 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IRF6785MTRPBF	Infineon Technologies	MOSFET N-CH 200V 3.4A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock6,672	MOSFET (Metal Oxide)	200V	3.4A (Ta), 19A (Tc)	10V	5V @ 100µA	36nC @ 10V	1500pF @ 25V	±20V	-	2.8W (Ta), 57W (Tc)	100 mOhm @ 4.2A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
TK20A60U(Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,440	MOSFET (Metal Oxide)	600V	20A (Ta)	10V	5V @ 1mA	27nC @ 10V	1470pF @ 10V	±30V	-	45W (Tc)	190 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
FDPF51N25YDTU	Fairchild/ON Semiconductor	MOSFET N-CH 250V 51A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 25.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 (Y-Forming) Package / Case: TO-220-3 Full Pack, Formed Leads	Package: TO-220-3 Full Pack, Formed Leads	Stock15,420	MOSFET (Metal Oxide)	250V	51A (Tc)	10V	5V @ 250µA	70nC @ 10V	3410pF @ 25V	±30V	-	38W (Tc)	60 mOhm @ 25.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3 (Y-Forming)	TO-220-3 Full Pack, Formed Leads
DMTH6010SK3-13	Diodes Incorporated	MOSFET N-CH 60V 16.3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1940pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,824	MOSFET (Metal Oxide)	60V	16.3A (Ta), 70A (Tc)	10V	4V @ 250µA	36.3nC @ 10V	1940pF @ 30V	±20V	-	3.1W (Ta)	8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4666DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 25V 16.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock69,888	MOSFET (Metal Oxide)	25V	16.5A (Tc)	2.5V, 10V	1.5V @ 250µA	34nC @ 10V	1145pF @ 10V	±12V	-	2.5W (Ta), 5W (Tc)	10 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
RJK0353DPA-WS-J0B	Renesas Electronics Corporation	MOSFET N-CH 30V 35A WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: WPAK(3F) (5x6) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	35A (Ta)	4.5V, 10V	2.5V @ 1mA	14 nC @ 10 V	2180 pF @ 10 V	±20V	-	40W (Ta)	5.2mOhm @ 17.5A, 10V	150°C	Surface Mount	WPAK(3F) (5x6)	8-PowerVDFN
DMT68M8LFV-13	Diodes Incorporated	MOSFET N-CH 60V 54.1A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 (Type UX) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	54.1A (Tc)	4.5V, 10V	3V @ 250µA	30 nC @ 10 V	2078 pF @ 30 V	±20V	-	2.7W (Ta), 41.7W (Tc)	9.5mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8 (Type UX)	8-PowerVDFN
SQM120N02-1M3L_GE3	Vishay Siliconix	MOSFET N-CH 20V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	290 nC @ 10 V	14500 pF @ 10 V	±20V	-	375W (Tc)	1.3mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
AOWF296	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 37A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	37A (Tc)	6V, 10V	3.4V @ 250µA	52 nC @ 10 V	2785 pF @ 50 V	±20V	-	26W (Tc)	9.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Long Leads, I2PAK, TO-262AA
IPB60R099CPATMA1	Infineon Technologies	MOSFET N-CH 600V 31A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock9,024	MOSFET (Metal Oxide)	600 V	31A (Tc)	10V	3.5V @ 1.2mA	80 nC @ 10 V	2800 pF @ 100 V	±20V	-	255W (Tc)	99mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
G3R30MT12J-TR	GeneSiC Semiconductor	1200V 30M TO-263-7 G3R SIC MOSFE FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 2.7V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V Vgs (Max): +22V, -10V FET Feature: - Power Dissipation (Max): 408W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock4,659	SiC (Silicon Carbide Junction Transistor)	1200 V	85A (Tc)	15V, 18V	2.7V @ 24mA	118 nC @ 15 V	3863 pF @ 800 V	+22V, -10V	-	408W (Tc)	34mOhm @ 45A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPF014N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 282A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Package: -	Stock3,462	MOSFET (Metal Oxide)	80 V	282A (Tc)	6V, 10V	3.8V @ 267µA	255 nC @ 10 V	12000 pF @ 40 V	±20V	-	300W (Tc)	1.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
FCPF20N60ST	onsemi	MOSFET N-CH 600V 20A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	20A (Tc)	-	-	-	-	-	-	-	-	-	Through Hole	TO-220F-3	TO-220-3 Full Pack
DMN2024UFDF-7	Diodes Incorporated	MOSFET N-CH 20V 7.1A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock9,000	MOSFET (Metal Oxide)	20 V	7.1A (Ta)	1.5V, 4.5V	1V @ 250µA	0.9 nC @ 10 V	647 pF @ 10 V	±10V	-	960mW (Ta)	22mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
SQJA81EP-T1_GE3	Vishay Siliconix	MOSFET P-CH 80V 46A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock3,030	MOSFET (Metal Oxide)	80 V	46A (Tc)	4.5V, 10V	2.5V @ 250µA	80 nC @ 10 V	5900 pF @ 25 V	±20V	-	68W (Tc)	17.3mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
UPA1809GR-9JG-E2-A	Renesas Electronics Corporation	MOSFET N-CH 30V 8A 8TSSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8A (Ta)	-	2.5V @ 1mA	10 nC @ 10 V	520 pF @ 10 V	-	-	-	21mOhm @ 4A, 10V	-	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)