Page 1353 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP06CN10LGXKSA1
Infineon Technologies

MOSFET N-CH 100V 100A TO220-3

Package: TO-220-3

Stock4,528
IPD03N03LB G
Infineon Technologies

MOSFET N-CH 30V 90A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,816
IRF7807VD1TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock2,000
IRLR8503TRR
Infineon Technologies

MOSFET N-CH 30V 44A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock432,000
NTHS4501NT1
ON Semiconductor

MOSFET N-CH 30V 4.9A CHIPFET

Package: 8-SMD, Flat Lead

Stock48,000
STL8N65M5
STMicroelectronics

MOSFET N-CH 650V 7A POWERFLAT

Package: 14-PowerVQFN

Stock72,000
IXTT64N25P
IXYS

MOSFET N-CH 250V 64A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock2,704
AOC2421
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 8V 2.5A 4WLCSP

Package: 4-XFBGA, CSPBGA

Stock4,976
NVR5124PLT1G
ON Semiconductor

MOSFET P-CH 60V SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,776
RSD050N10TL
Rohm Semiconductor

MOSFET N-CH 100V 5A CPT3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock145,020
NDD05N50ZT4G
ON Semiconductor

MOSFET N-CH 500V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock251,040
STP17NF25
STMicroelectronics

MOSFET N-CH 250V 17A TO-220

Package: TO-220-3

Stock626,052
IXTY08N50D2
IXYS

MOSFET N-CH 500V 800MA DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock11,148
SIR818DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A PPAK SO-8

Package: PowerPAK? SO-8

Stock379,476
FDT86246L
Fairchild/ON Semiconductor

MOSFET N-CH 150V 2A SOT-223

Package: TO-261-4, TO-261AA

Stock7,456
SIHG21N65EF-GE3
Vishay Siliconix

MOSFET N-CH 650V 21A TO-247AC

Package: TO-247-3

Stock8,424
BSS84LT1
onsemi

MOSFET P-CH 50V 130MA SOT-23

Package: -

Request a Quote
DI040P04PT
Diotec Semiconductor

MOSFET POWERQFN 3X3 P -40V -40A

Package: -

Request a Quote
IMW65R030M1HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

Package: -

Stock450
PJQ4460AP-AU_R2_000A1
Panjit International Inc.

60V N-CHANNEL ENHANCEMENT MODE M

Package: -

Stock13,377

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP06CN10LGXKSA1	Infineon Technologies	MOSFET N-CH 100V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock4,528	MOSFET (Metal Oxide)	100V	100A (Tc)	4.5V, 10V	2.4V @ 180µA	124nC @ 10V	11900pF @ 50V	±20V	-	214W (Tc)	6.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPD03N03LB G	Infineon Technologies	MOSFET N-CH 30V 90A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,816	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	2V @ 70µA	40nC @ 5V	5200pF @ 15V	±20V	-	115W (Tc)	3.3 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7807VD1TRPBF	Infineon Technologies	MOSFET N-CH 30V 8.3A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock2,000	MOSFET (Metal Oxide)	30V	8.3A (Ta)	4.5V	3V @ 250µA	14nC @ 4.5V	-	±20V	Schottky Diode (Isolated)	2.5W (Ta)	25 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRLR8503TRR	Infineon Technologies	MOSFET N-CH 30V 44A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock432,000	MOSFET (Metal Oxide)	30V	44A (Tc)	4.5V, 10V	3V @ 250µA	20nC @ 5V	1650pF @ 25V	±20V	-	62W (Tc)	16 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTHS4501NT1	ON Semiconductor	MOSFET N-CH 30V 4.9A CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 462pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 38 mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ChipFET? Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock48,000	MOSFET (Metal Oxide)	30V	4.9A (Ta)	4.5V, 10V	2V @ 250µA	9.1nC @ 10V	462pF @ 24V	±20V	-	1.3W (Ta)	38 mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	ChipFET?	8-SMD, Flat Lead
STL8N65M5	STMicroelectronics	MOSFET N-CH 650V 7A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFLAT? (5x5) Package / Case: 14-PowerVQFN	Package: 14-PowerVQFN	Stock72,000	MOSFET (Metal Oxide)	650V	1.4A (Ta), 7A (Tc)	10V	5V @ 250µA	15nC @ 10V	690pF @ 100V	±25V	-	2.5W (Ta), 70W (Tc)	600 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	PowerFLAT? (5x5)	14-PowerVQFN
IXTT64N25P	IXYS	MOSFET N-CH 250V 64A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 49 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock2,704	MOSFET (Metal Oxide)	250V	64A (Tc)	10V	5V @ 250µA	105nC @ 10V	3450pF @ 25V	±20V	-	400W (Tc)	49 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
AOC2421	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 8V 2.5A 4WLCSP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 1.5A, 2.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-AphaDFN (0.97x0.97) Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock4,976	MOSFET (Metal Oxide)	8V	2.5A (Ta)	1.2V, 2.5V	700mV @ 250µA	13nC @ 4.5V	752pF @ 4V	±5V	-	600mW (Ta)	62 mOhm @ 1.5A, 2.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-AphaDFN (0.97x0.97)	4-XFBGA, CSPBGA
NVR5124PLT1G	ON Semiconductor	MOSFET P-CH 60V SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,776	MOSFET (Metal Oxide)	60V	1.1A (Ta)	4.5V, 10V	2.5V @ 250µA	4.3nC @ 10V	240pF @ 25V	±20V	-	470mW (Ta)	230 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
RSD050N10TL	Rohm Semiconductor	MOSFET N-CH 100V 5A CPT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 15W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: CPT3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock145,020	MOSFET (Metal Oxide)	100V	5A (Ta)	4V, 10V	2.5V @ 1mA	14nC @ 10V	530pF @ 25V	±20V	-	15W (Tc)	190 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	CPT3	TO-252-3, DPak (2 Leads + Tab), SC-63
NDD05N50ZT4G	ON Semiconductor	MOSFET N-CH 500V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock251,040	MOSFET (Metal Oxide)	500V	4.7A (Tc)	10V	4.5V @ 50µA	18.5nC @ 10V	530pF @ 25V	±30V	-	83W (Tc)	1.5 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STP17NF25	STMicroelectronics	MOSFET N-CH 250V 17A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock626,052	MOSFET (Metal Oxide)	250V	17A (Tc)	10V	4V @ 250µA	29.5nC @ 10V	1000pF @ 25V	±20V	-	90W (Tc)	165 mOhm @ 8.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTY08N50D2	IXYS	MOSFET N-CH 500V 800MA DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 312pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 4.6 Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock11,148	MOSFET (Metal Oxide)	500V	800mA (Tc)	-	-	12.7nC @ 5V	312pF @ 25V	±20V	Depletion Mode	60W (Tc)	4.6 Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIR818DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock379,476	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.4V @ 250µA	95nC @ 10V	3660pF @ 15V	±20V	-	5.2W (Ta), 69W (Tc)	2.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDT86246L	Fairchild/ON Semiconductor	MOSFET N-CH 150V 2A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 228 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock7,456	MOSFET (Metal Oxide)	150V	2A (Ta)	4.5V, 10V	2.5V @ 250µA	6.3nC @ 10V	335pF @ 75V	±20V	-	1W (Ta)	228 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
SIHG21N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 21A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2322pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock8,424	MOSFET (Metal Oxide)	650V	21A (Tc)	10V	4V @ 250µA	106nC @ 10V	2322pF @ 100V	±30V	-	208W (Tc)	180 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AC	TO-247-3
BSS84LT1	onsemi	MOSFET P-CH 50V 130MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 5 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	130mA (Ta)	-	2V @ 250µA	-	30 pF @ 5 V	-	-	-	10Ohm @ 100mA, 5V	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DI040P04PT	Diotec Semiconductor	MOSFET POWERQFN 3X3 P -40V -40A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3538 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 22.7W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	59 nC @ 10 V	3538 pF @ 20 V	±20V	-	22.7W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerWDFN
IMW65R030M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 8.8mA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock450	SiCFET (Silicon Carbide)	650 V	58A (Tc)	18V	5.7V @ 8.8mA	48 nC @ 18 V	1643 pF @ 400 V	+20V, -2V	-	197W (Tc)	42mOhm @ 29.5A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
PJQ4460AP-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 23.8W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock13,377	MOSFET (Metal Oxide)	60 V	3.7A (Ta), 11A (Tc)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	2.4W (Ta), 23.8W (Tc)	72mOhm @ 6A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
RJK1028DNS-00-J5	Renesas Electronics Corporation	ABU / MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 10 V Vgs (Max): +12V, -5V FET Feature: - Power Dissipation (Max): 10W (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	4A (Ta)	4.5V, 10V	2.5V @ 1mA	3.7 nC @ 4.5 V	450 pF @ 10 V	+12V, -5V	-	10W (Ta)	165mOhm @ 2A, 10V	150°C	Surface Mount	8-HWSON (3.3x3.3)	8-PowerWDFN
G048N04T	Goford Semiconductor	MOSFET N-CH 40V 150A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6561 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	150A (Tc)	10V	2.5V @ 250µA	117 nC @ 10 V	6561 pF @ 20 V	±20V	-	130W (Tc)	3.3Ohm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-220	TO-220-3
TSM260P02CX-RFG	Taiwan Semiconductor Corporation	-20V, -6.5A, SINGLE P-CHANNEL PO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: -	Package: -	Stock49,845	MOSFET (Metal Oxide)	20 V	6.5A (Tc)	1.8V, 2.5V, 4.5V	1V @ 250µA	19.5 nC @ 4.5 V	1670 pF @ 15 V	±10V	-	1.56W (Tc)	26mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	-
BSZ018NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 23A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: -	Stock39,393	MOSFET (Metal Oxide)	25 V	23A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	39 nC @ 10 V	2800 pF @ 12 V	±20V	-	2.1W (Ta), 69W (Tc)	1.8mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IRF523	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.6A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	8A (Tc)	10V	4V @ 250µA	15 nC @ 10 V	350 pF @ 25 V	±20V	-	60W (Tc)	360mOhm @ 5.6A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SQJA84EP-T1_BE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Dual Package / Case: PowerPAK® SO-8 Dual	Package: -	Stock9,000	MOSFET (Metal Oxide)	80 V	46A (Tc)	4.5V, 10V	2.5V @ 250µA	35 nC @ 10 V	2100 pF @ 25 V	±20V	-	55W (Tc)	12.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8 Dual	PowerPAK® SO-8 Dual
IRFF9221	International Rectifier	MOSFET N-CH 150V 2.5A TO205AF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 20W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2.5A (Tc)	-	-	-	-	-	-	20W	-	-	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
XP4459M	YAGEO XSEMI	MOSFET P-CH 30V 11.3A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC	Package: -	Stock3,000	MOSFET (Metal Oxide)	30 V	11.3A (Ta)	4.5V, 10V	3V @ 250µA	64 nC @ 10 V	3360 pF @ 15 V	±20V	-	2.5W (Ta)	13.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC