Page 1370 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFS8408
Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,184
IPD230N06NGBTMA1
Infineon Technologies

MOSFET N-CH 60V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,920
IRFU3704ZPBF
Infineon Technologies

MOSFET N-CH 20V 60A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,912
IRFB41N15D
Infineon Technologies

MOSFET N-CH 150V 41A TO-220AB

Package: TO-220-3

Stock5,152
JAN2N6782
Microsemi Corporation

MOSFET N-CH TO-205AF TO-39

Package: TO-205AF Metal Can

Stock5,328
AO4406
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 11.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,521,252
PHB119NQ06T,118
NXP

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,608
BSS84W-7
Diodes Incorporated

MOSFET P-CH 50V 130MA SC70-3

Package: SC-70, SOT-323

Stock102,000
AOWF11N70
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 11A TO262F

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,344
IXFN36N60
IXYS

MOSFET N-CH 600V 36A SOT-227B

Package: SOT-227-4, miniBLOC

Stock5,616
CSD17579Q5AT
Texas Instruments

MOSFET N-CH 30V 25A 8VSON

Package: 8-PowerTDFN

Stock14,652
FDP18N20F
Fairchild/ON Semiconductor

MOSFET N-CH 200V 18A TO-220

Package: TO-220-3

Stock210,864
ZVP4424A
Diodes Incorporated

MOSFET P-CH 240V 0.2A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock137,856
ZXMN6A11GTA
Diodes Incorporated

MOSFET N-CH 60V 3.1A SOT223

Package: TO-261-4, TO-261AA

Stock1,534,320
STS2301A-ML
MOSLEADER

Single-P -20V -2.6A SOT-23

Package: -

Request a Quote
XP263N1001TR-G
Torex Semiconductor Ltd

MOSFET N-CH 60V 1A SOT23

Package: -

Stock71,262
FDMA410NZT-F130
onsemi

PT4 NCH 20/8V ZENER IN

Package: -

Stock36,000
PSMN1R4-30YLD-2X
Nexperia USA Inc.

PSMN1R4-30YLD/SOT669/LFPAK

Package: -

Request a Quote
DMTH8028LPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

Package: -

Stock7,440
IXTA34N65X2
IXYS

MOSFET N-CH 650V 34A TO263AA

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFS8408	Infineon Technologies	MOSFET N-CH 40V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 324nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,184	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	3.9V @ 250µA	324nC @ 10V	10820pF @ 25V	±20V	-	294W (Tc)	1.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD230N06NGBTMA1	Infineon Technologies	MOSFET N-CH 60V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,920	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 50µA	31nC @ 10V	1100pF @ 30V	±20V	-	100W (Tc)	23 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFU3704ZPBF	Infineon Technologies	MOSFET N-CH 20V 60A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,912	MOSFET (Metal Oxide)	20V	60A (Tc)	4.5V, 10V	2.55V @ 250µA	14nC @ 4.5V	1190pF @ 10V	±20V	-	48W (Tc)	8.4 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
IRFB41N15D	Infineon Technologies	MOSFET N-CH 150V 41A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,152	MOSFET (Metal Oxide)	150V	41A (Tc)	10V	5.5V @ 250µA	110nC @ 10V	2520pF @ 25V	±30V	-	200W (Tc)	45 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
JAN2N6782	Microsemi Corporation	MOSFET N-CH TO-205AF TO-39 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 610 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-39 Package / Case: TO-205AF Metal Can	Package: TO-205AF Metal Can	Stock5,328	MOSFET (Metal Oxide)	100V	3.5A (Tc)	10V	4V @ 250µA	8.1nC @ 10V	-	±20V	-	800mW (Ta), 15W (Tc)	610 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-39	TO-205AF Metal Can
AO4406	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 11.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,521,252	MOSFET (Metal Oxide)	30V	11.5A (Ta)	2.5V, 10V	1.5V @ 250µA	24nC @ 4.5V	2300pF @ 15V	±12V	-	3W (Ta)	14 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
PHB119NQ06T,118	NXP	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,608	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	53nC @ 10V	2820pF @ 25V	±20V	-	200W (Tc)	7.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS84W-7	Diodes Incorporated	MOSFET P-CH 50V 130MA SC70-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock102,000	MOSFET (Metal Oxide)	50V	130mA (Ta)	5V	2V @ 1mA	-	45pF @ 25V	±20V	-	200mW (Ta)	10 Ohm @ 100mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
AOWF11N70	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 700V 11A TO262F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 870 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,344	MOSFET (Metal Oxide)	700V	11A (Tc)	10V	4.5V @ 250µA	45nC @ 10V	2150pF @ 25V	±30V	-	28W (Tc)	870 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	-	TO-262-3 Long Leads, I2Pak, TO-262AA
IXFN36N60	IXYS	MOSFET N-CH 600V 36A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 36A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,616	MOSFET (Metal Oxide)	600V	36A	10V	4.5V @ 8mA	325nC @ 10V	9000pF @ 25V	±20V	-	520W (Tc)	180 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
CSD17579Q5AT	Texas Instruments	MOSFET N-CH 30V 25A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,652	MOSFET (Metal Oxide)	30V	25A (Ta)	4.5V, 10V	2V @ 250µA	15.1nC @ 10V	1030pF @ 15V	±20V	-	3.1W (Ta), 36W (Tc)	9.7 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
FDP18N20F	Fairchild/ON Semiconductor	MOSFET N-CH 200V 18A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock210,864	MOSFET (Metal Oxide)	200V	18A (Tc)	10V	5V @ 250µA	26nC @ 10V	1180pF @ 25V	±30V	-	100W (Tc)	145 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVP4424A	Diodes Incorporated	MOSFET P-CH 240V 0.2A TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±40V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock137,856	MOSFET (Metal Oxide)	240V	200mA (Ta)	3.5V, 10V	2V @ 1mA	-	200pF @ 25V	±40V	-	750mW (Ta)	9 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
ZXMN6A11GTA	Diodes Incorporated	MOSFET N-CH 60V 3.1A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock1,534,320	MOSFET (Metal Oxide)	60V	3.1A (Ta)	4.5V, 10V	3V @ 250µA	5.7nC @ 10V	330pF @ 40V	±20V	-	2W (Ta)	120 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
STS2301A-ML	MOSLEADER	Single-P -20V -2.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP263N1001TR-G	Torex Semiconductor Ltd	MOSFET N-CH 60V 1A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock71,262	MOSFET (Metal Oxide)	60 V	1A (Ta)	4.5V, 10V	2.4V @ 250µA	3.6 nC @ 10 V	180 pF @ 20 V	±20V	-	400mW (Ta)	250mOhm @ 500mA, 10V	150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDMA410NZT-F130	onsemi	PT4 NCH 20/8V ZENER IN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFN (2.05x2.05) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock36,000	MOSFET (Metal Oxide)	20 V	9.5A (Ta)	1.5V, 4.5V	1V @ 250µA	14 nC @ 4.5 V	1310 pF @ 10 V	±8V	-	900mW (Ta)	23mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN (2.05x2.05)	6-UDFN Exposed Pad
PSMN1R4-30YLD-2X	Nexperia USA Inc.	PSMN1R4-30YLD/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W (Ta) Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	100A (Ta)	4.5V, 10V	2.2V @ 1mA	54.8 nC @ 10 V	3840 pF @ 15 V	±20V	-	166W (Ta)	1.42mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
DMTH8028LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Stock7,440	MOSFET (Metal Oxide)	80 V	41.7A (Tc)	4.5V, 10V	2.5V @ 250µA	10.4 nC @ 10 V	641 pF @ 25 V	±20V	-	3.9W (Ta), 65W (Tc)	25mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
IXTA34N65X2	IXYS	MOSFET N-CH 650V 34A TO263AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AA Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	34A (Tc)	10V	5V @ 250µA	54 nC @ 10 V	3000 pF @ 25 V	±30V	-	540W (Tc)	96mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263AA	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
FDD8444-F085P	onsemi	MOSFET N-CH 40V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 153W (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	50A (Ta)	10V	4V @ 250µA	116 nC @ 10 V	6195 pF @ 25 V	±20V	-	153W (Ta)	5.2mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
SQJA68EP-T1_BE3	Vishay Siliconix	N-CHANNEL 100-V (D-S) 175C MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 92mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock6,834	MOSFET (Metal Oxide)	100 V	14A (Tc)	4.5V, 10V	2.5V @ 250µA	8 nC @ 10 V	280 pF @ 25 V	±20V	-	45W (Tc)	92mOhm @ 4A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SPS04N60C3AKMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
R6504ENXC7G	Rohm Semiconductor	650V 4A TO-220FM, LOW-NOISE POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	650 V	4A (Ta)	10V	4V @ 130µA	15 nC @ 10 V	220 pF @ 25 V	±20V	-	40W (Tc)	1.05Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
BSS84HE3-TP	Micro Commercial Co	MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Tj) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 150mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	200mA (Ta)	4.5V, 10V	2V @ 250µA	1.8 nC @ 10 V	27 pF @ 30 V	±20V	-	500mW (Tj)	3.6Ohm @ 150mA, 10V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MMFTP5618-AQ	Diotec Semiconductor	IC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 361 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	1.25A (Ta)	4.5V, 10V	3V @ 1mA	7 nC @ 10 V	361 pF @ 30 V	±20V	-	500mW (Ta)	170mOhm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FDMC035N10X1	onsemi	N-CHANNEL POWERTRENCH MOSFET 100 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	5.5A (Ta)	6V, 10V	4V @ 250µA	58 nC @ 10 V	2675 pF @ 50 V	±20V	-	2.3W (Ta), 50W (Tc)	37mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerWDFN
AOM015V75X2Q	Alpha & Omega Semiconductor Inc.	750V SILICON CARBIDE MOSFET FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 750 V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 3.5V @ 24mA Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4880 pF @ 400 V Vgs (Max): +15V, -5V FET Feature: - Power Dissipation (Max): 312W (Tj) Rds On (Max) @ Id, Vgs: 22mOhm @ 24A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	750 V	96A (Tc)	15V	3.5V @ 24mA	152 nC @ 15 V	4880 pF @ 400 V	+15V, -5V	-	312W (Tj)	22mOhm @ 24A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4