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Infineon Technologies |
MOSFET N-CH 30V 235A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6320pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 231W (Tc)
- Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 75A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,368 |
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MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | ±20V | - | 231W (Tc) | 2.4 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Nexperia USA Inc. |
MOSFET N-CH SC-88
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Stock7,248 |
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Microsemi Corporation |
MOSFET N-CH 18-LCC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Tc)
- Rds On (Max) @ Id, Vgs: 350 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 18-ULCC (9.14x7.49)
- Package / Case: 18-BQFN Exposed Pad
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Package: 18-BQFN Exposed Pad |
Stock6,128 |
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MOSFET (Metal Oxide) | 100V | 4.5A (Tc) | 10V | 4V @ 250µA | 18nC @ 10V | - | ±20V | - | 800mW (Tc) | 350 mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-BQFN Exposed Pad |
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Fairchild/ON Semiconductor |
MOSFET N-CH 650V 7A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock3,440 |
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MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1245pF @ 25V | ±30V | - | 52W (Tc) | 1.4 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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IXYS |
MOSFET N-CH 75V 76A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2580pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock60,132 |
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MOSFET (Metal Oxide) | 75V | 76A (Tc) | 10V | 4V @ 50µA | 57nC @ 10V | 2580pF @ 25V | ±20V | - | 176W (Tc) | 12 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 12.5A BGA
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2409pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 30-BGA (4x3.5)
- Package / Case: 30-WFBGA
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Package: 30-WFBGA |
Stock18,372 |
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MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 35nC @ 5V | 2409pF @ 15V | ±25V | - | 2.2W (Ta) | 10.5 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 30-BGA (4x3.5) | 30-WFBGA |
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Diodes Incorporated |
MOSFET P-CH 240V 0.48A SOT223
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 480mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- Vgs (Max): ±40V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 Ohm @ 200mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: TO-261-4, TO-261AA |
Stock238,656 |
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MOSFET (Metal Oxide) | 240V | 480mA (Ta) | 3.5V, 10V | 2V @ 1mA | - | 200pF @ 25V | ±40V | - | 2.5W (Ta) | 9 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 80V 60A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 60A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-FP
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock20,220 |
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MOSFET (Metal Oxide) | 80V | 60A (Tc) | 6V, 10V | 3.5V @ 90µA | 69nC @ 10V | 4750pF @ 40V | ±20V | - | 39W (Tc) | 5.7 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 42.8A TO220 FPK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 42.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35.7W (Tc)
- Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
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Package: TO-220-3 Full Pack |
Stock20,640 |
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MOSFET (Metal Oxide) | 100V | 42.8A (Tc) | 7.5V, 10V | 4V @ 250µA | 50nC @ 10V | 1950pF @ 50V | ±20V | - | 35.7W (Tc) | 9.3 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 12 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,384 |
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MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 2.2V @ 20µA | 40nC @ 10V | 2890pF @ 25V | ±16V | - | 50W (Tc) | 12 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia USA Inc. |
MOSFET N-CH 20V SOT883
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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Package: 3-XFDFN |
Stock232,944 |
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MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 950mV @ 250µA | 1.6nC @ 4.5V | 93pF @ 10V | ±8V | - | 350mW (Ta), 6.25W (Tc) | 200 mOhm @ 1.5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1006B-3 | 3-XFDFN |
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Panjit International Inc. |
SOT-23, MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 396 pF @ 10 V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 1.25W (Ta)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.2A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 20 V | 5.2A (Ta) | 1.8V, 4.5V | 1.2V @ 250µA | 4.1 nC @ 4.5 V | 396 pF @ 10 V | ±12V | - | 1.25W (Ta) | 36mOhm @ 5.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 1000V 100MA TO252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 100mA (Tc) | 10V | 4.5V @ 25µA | 6.9 nC @ 10 V | 54 pF @ 25 V | ±20V | - | 25W (Tc) | 80Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Renesas Electronics Corporation |
POWER MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI50
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4327 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
- Rds On (Max) @ Id, Vgs: 4.9mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 100 V | 21A (Ta), 115A (Tc) | 10V | 4V @ 250µA | 66 nC @ 10 V | 4327 pF @ 50 V | ±20V | - | 4.7W (Ta), 136W (Tc) | 4.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
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Micro Commercial Co |
N-CHANNEL MOSFET, TOLL-8L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8010 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 391W (Tj)
- Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL-8L
- Package / Case: 8-PowerSFN
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Package: - |
Stock11,970 |
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MOSFET (Metal Oxide) | 40 V | 270A (Tc) | 6V, 10V | 4.4V @ 250µA | 135.6 nC @ 10 V | 8010 pF @ 25 V | ±20V | - | 391W (Tj) | 2mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TOLL-8L | 8-PowerSFN |
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Renesas Electronics Corporation |
MOSFET N-CH 500V 1.2A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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Package: - |
Stock8,325 |
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MOSFET (Metal Oxide) | 500 V | - | 8V, 10V | - | - | - | ±30V | - | - | - | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
TRENCH >=100V
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 71W (Tc)
- Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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Package: - |
Stock3,003 |
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MOSFET (Metal Oxide) | 100 V | 12A (Ta), 52A (Tc) | 6V, 10V | 3.8V @ 30µA | 28 nC @ 10 V | 1300 pF @ 50 V | ±20V | - | 3.8W (Ta), 71W (Tc) | 12.9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Diotec Semiconductor |
MOSFET, POWERQFN 5X6, 40V, 110A,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-QFN (5x6)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock14,526 |
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MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 48 nC @ 10 V | 2980 pF @ 25 V | ±20V | - | 45W (Tc) | 2.5mOhm @ 23A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 4763 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
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MOSFET (Metal Oxide) | 40 V | 69A (Tc) | 4.5V, 10V | 3V @ 250µA | 87 nC @ 10 V | 4763 pF @ 20 V | ±20V | - | 1.5W (Ta) | 13mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 3A, 100V,
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.78W (Tc)
- Rds On (Max) @ Id, Vgs: 185mOhm @ 2A, 10V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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Package: - |
Stock18,000 |
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MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 21 nC @ 10 V | 1190 pF @ 50 V | ±20V | - | 1.78W (Tc) | 185mOhm @ 2A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Renesas Electronics Corporation |
MOSFET N-CH 25V 50A 8DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 6130 pF @ 10 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6)
- Package / Case: 8-WFDFN Exposed Pad
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Package: - |
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MOSFET (Metal Oxide) | 25 V | 50A (Ta) | - | - | 31 nC @ 4.5 V | 6130 pF @ 10 V | - | - | 50W (Tc) | 1.8mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-WFDFN Exposed Pad |
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Nexperia USA Inc. |
SINGLE N-CHANNEL 60 V, 13 MOHM L
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2941 pF @ 25 V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 79.4W (Tc)
- Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 4.5V, 10V | 2.1V @ 1mA | 56 nC @ 10 V | 2941 pF @ 25 V | ±10V | - | 79.4W (Tc) | 21mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 (5-Lead) |
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Infineon Technologies |
MOSFET N-CH 100V 8.8A/37A 8TDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 18µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 43W (Tc)
- Rds On (Max) @ Id, Vgs: 16.9mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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Package: - |
Stock7,299 |
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MOSFET (Metal Oxide) | 100 V | 8.8A (Ta), 37A (Tc) | 4.5V, 10V | 2.3V @ 18µA | 15 nC @ 10 V | 1000 pF @ 50 V | ±20V | - | 2.5W (Ta), 43W (Tc) | 16.9mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3014 pF @ 15 V
- Vgs (Max): +20V, -16V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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Package: - |
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MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 2.2V @ 1mA | 66 nC @ 10 V | 3014 pF @ 15 V | +20V, -16V | - | 52W (Tc) | 2.3mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Qorvo |
750V/33MO,SICFET,G4,TOLL
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Vishay Siliconix |
P-CHANNEL 30-V (D-S) MOSFET SO-8
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 13.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: - |
Stock9,453 |
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MOSFET (Metal Oxide) | 30 V | 10.2A (Ta), 13.6A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 50 nC @ 10 V | 1870 pF @ 15 V | ±25V | - | 2.5W (Ta), 4.5W (Tc) | 15mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Littelfuse Inc. |
SICFET N-CH 1700V 5A TO247-3L
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 1000 V
- Vgs (Max): +22V, -6V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 1Ohm @ 2A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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Package: - |
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SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 15V, 20V | 4V @ 1mA | 15 nC @ 20 V | 200 pF @ 1000 V | +22V, -6V | - | 54W (Tc) | 1Ohm @ 2A, 20V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |