Page 1372 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3711ZSTRLPBF
Infineon Technologies

MOSFET N-CH 20V 92A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,344
IPD10N03LA
Infineon Technologies

MOSFET N-CH 25V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock215,820
IXFT58N20Q TRL
IXYS

MOSFET N-CH TO268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,392
FDV304P_NB8U003
Fairchild/ON Semiconductor

MOSFET P-CH 25V 460MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock2,576
MIC94051BM4 TR
Microchip Technology

MOSFET P-CH 6V 1.8A 8MSOP

Package: TO-253-4, TO-253AA

Stock6,976
IPI320N20N3GAKSA1
Infineon Technologies

MOSFET N-CH 200V 34A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,816
IRF6721STRPBF
Infineon Technologies

MOSFET N-CH 30V 14A DIRECTFET

Package: DirectFET? Isometric SQ

Stock45,396
BSB012NE2LXIXUMA1
Infineon Technologies

MOSFET N-CH 25V 170A WDSON

Package: 3-WDSON

Stock4,992
IXTQ120N20P
IXYS

MOSFET N-CH 200V 120A TO-3P

Package: TO-3P-3, SC-65-3

Stock6,432
NDD60N360U1T4G
ON Semiconductor

MOSFET N-CH 600V 114A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,304
TK7P50D(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 7A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,416
NTTFSC4937NTAG
ON Semiconductor

MOSFET N-CH 30V 50A U8FL

Package: -

Stock4,496
STW20NM60FD
STMicroelectronics

MOSFET N-CH 600V 20A TO-247

Package: TO-247-3

Stock60,816
R5013ANXFU6
Rohm Semiconductor

MOSFET N-CH 500V 13A TO-220FM

Package: TO-220-2 Full Pack

Stock4,768
SI7478DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 15A PPAK SO-8

Package: PowerPAK? SO-8

Stock62,088
FDD86252
Fairchild/ON Semiconductor

MOSFET N-CH 150V 5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock396,012
STW15NM60N
STMicroelectronics

MOSFET N-CH 600V 14A TO-247

Package: TO-247-3

Stock14,604
BSC072N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 74A 8TDSON

Package: 8-PowerTDFN

Stock3,584
BUK7E8R3-40E,127
Nexperia USA Inc.

MOSFET N-CH 40V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock36,426
ZXMP6A17N8TC
Diodes Incorporated

MOSFET P-CH 60V 2.7A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,216

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3711ZSTRLPBF	Infineon Technologies	MOSFET N-CH 20V 92A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,344	MOSFET (Metal Oxide)	20V	92A (Tc)	4.5V, 10V	2.45V @ 250µA	24nC @ 4.5V	2150pF @ 10V	±20V	-	79W (Tc)	6 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD10N03LA	Infineon Technologies	MOSFET N-CH 25V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock215,820	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	2V @ 20µA	11nC @ 5V	1358pF @ 15V	±20V	-	52W (Tc)	10.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFT58N20Q TRL	IXYS	MOSFET N-CH TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 (IXFT) Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,392	MOSFET (Metal Oxide)	200V	58A (Tc)	10V	4V @ 4mA	140nC @ 10V	3600pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268 (IXFT)	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FDV304P_NB8U003	Fairchild/ON Semiconductor	MOSFET P-CH 25V 460MA SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 460mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V Vgs (Max): -8V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock2,576	MOSFET (Metal Oxide)	25V	460mA (Ta)	2.7V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	63pF @ 10V	-8V	-	350mW (Ta)	1.1 Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
MIC94051BM4 TR	Microchip Technology	MOSFET P-CH 6V 1.8A 8MSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 6V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V Vgs (Max): 6V FET Feature: - Power Dissipation (Max): 568mW (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-143 Package / Case: TO-253-4, TO-253AA	Package: TO-253-4, TO-253AA	Stock6,976	MOSFET (Metal Oxide)	6V	1.8A (Ta)	1.8V, 4.5V	1.2V @ 250µA	-	600pF @ 5.5V	6V	-	568mW (Ta)	160 mOhm @ 100mA, 4.5V	-40°C ~ 150°C (TJ)	Surface Mount	SOT-143	TO-253-4, TO-253AA
IPI320N20N3GAKSA1	Infineon Technologies	MOSFET N-CH 200V 34A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,816	MOSFET (Metal Oxide)	200V	34A (Tc)	10V	4V @ 90µA	29nC @ 10V	2350pF @ 100V	±20V	-	136W (Tc)	32 mOhm @ 34A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
IRF6721STRPBF	Infineon Technologies	MOSFET N-CH 30V 14A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 14A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock45,396	MOSFET (Metal Oxide)	30V	14A (Ta), 60A (Tc)	4.5V, 10V	2.4V @ 25µA	17nC @ 4.5V	1430pF @ 15V	±20V	-	2.2W (Ta), 42W (Tc)	7.3 mOhm @ 14A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
BSB012NE2LXIXUMA1	Infineon Technologies	MOSFET N-CH 25V 170A WDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5852pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: MG-WDSON-2, CanPAK M? Package / Case: 3-WDSON	Package: 3-WDSON	Stock4,992	MOSFET (Metal Oxide)	25V	170A (Tc)	4.5V, 10V	2V @ 250µA	82nC @ 10V	5852pF @ 12V	±20V	-	2.8W (Ta), 57W (Tc)	1.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	MG-WDSON-2, CanPAK M?	3-WDSON
IXTQ120N20P	IXYS	MOSFET N-CH 200V 120A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 714W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,432	MOSFET (Metal Oxide)	200V	120A (Tc)	10V	5V @ 250µA	152nC @ 10V	6000pF @ 25V	±20V	-	714W (Tc)	22 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
NDD60N360U1T4G	ON Semiconductor	MOSFET N-CH 600V 114A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,304	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	4V @ 250µA	26nC @ 10V	790pF @ 50V	±25V	-	114W (Tc)	360 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK-3	TO-252-3, DPak (2 Leads + Tab), SC-63
TK7P50D(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 500V 7A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,416	MOSFET (Metal Oxide)	500V	7A (Ta)	10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	±30V	-	100W (Tc)	1.22 Ohm @ 3.5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTTFSC4937NTAG	ON Semiconductor	MOSFET N-CH 30V 50A U8FL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock4,496	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STW20NM60FD	STMicroelectronics	MOSFET N-CH 600V 20A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 10A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock60,816	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	37nC @ 10V	1300pF @ 25V	±30V	-	214W (Tc)	290 mOhm @ 10A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
R5013ANXFU6	Rohm Semiconductor	MOSFET N-CH 500V 13A TO-220FM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock4,768	MOSFET (Metal Oxide)	500V	13A (Ta)	10V	4.5V @ 1mA	35nC @ 10V	1300pF @ 25V	±30V	-	50W (Tc)	380 mOhm @ 6.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
SI7478DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 15A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock62,088	MOSFET (Metal Oxide)	60V	15A (Ta)	4.5V, 10V	3V @ 250µA	160nC @ 10V	-	±20V	-	1.9W (Ta)	7.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDD86252	Fairchild/ON Semiconductor	MOSFET N-CH 150V 5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock396,012	MOSFET (Metal Oxide)	150V	5A (Ta), 27A (Tc)	6V, 10V	4V @ 250µA	16nC @ 10V	985pF @ 75V	±20V	-	3.1W (Ta), 89W (Tc)	52 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
STW15NM60N	STMicroelectronics	MOSFET N-CH 600V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock14,604	MOSFET (Metal Oxide)	600V	14A (Tc)	10V	4V @ 250µA	37nC @ 10V	1250pF @ 50V	±25V	-	125W (Tc)	299 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
BSC072N08NS5ATMA1	Infineon Technologies	MOSFET N-CH 80V 74A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,584	MOSFET (Metal Oxide)	80V	74A (Tc)	6V, 10V	3.8V @ 36µA	29nC @ 10V	2100pF @ 40V	±20V	-	2.5W (Ta), 69W (Tc)	7.2 mOhm @ 37A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
BUK7E8R3-40E,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 7.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock36,426	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	24nC @ 10V	1730pF @ 25V	±20V	-	96W (Tc)	7.4 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
ZXMP6A17N8TC	Diodes Incorporated	MOSFET P-CH 60V 2.7A 8SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,216	MOSFET (Metal Oxide)	60V	2.7A (Ta)	4.5V, 10V	1V @ 250µA	17.7nC @ 10V	637pF @ 30V	±20V	-	1.56W (Ta)	125 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
TSM240N03CX6	Taiwan Semiconductor Corporation	30V, 6.5A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.5A (Tc)	4.5V, 10V	2.5V @ 250µA	4.1 nC @ 4.5 V	345 pF @ 25 V	±20V	-	1.56W (Tc)	24mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
DMN2040UVT-13	Diodes Incorporated	MOSFET N-CH 20V 6.7A TSOT26 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6.7A (Ta)	2.5V, 4.5V	1.5V @ 250µA	7.5 nC @ 4.5 V	667 pF @ 10 V	±8V	-	1.2W (Ta)	24mOhm @ 6.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
DMP6350SQ-7	Diodes Incorporated	MOSFET P-CH 60V 1.5A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW Rds On (Max) @ Id, Vgs: 350mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock22,131	MOSFET (Metal Oxide)	60 V	1.5A (Ta)	4.5V, 10V	3V @ 250µA	4.1 nC @ 10 V	206 pF @ 30 V	±20V	-	720mW	350mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SSF2320Y	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 0.8A, 20V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 312mW (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock18,000	MOSFET (Metal Oxide)	20 V	800mA (Tc)	1.2V, 4.5V	1V @ 250µA	1 nC @ 4.5 V	75 pF @ 10 V	±8V	-	312mW (Tc)	300mOhm @ 500mA, 4.5V	-55°C ~ 150°C	Surface Mount	SOT-523	SOT-523
IRFS730B	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	5.5A (Tj)	10V	4V @ 250µA	33 nC @ 10 V	1000 pF @ 25 V	±30V	-	38W (Tc)	1Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
IRFS820B	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	2.5A (Tj)	10V	4V @ 250µA	18 nC @ 10 V	610 pF @ 25 V	±30V	-	33W (Tc)	2.6Ohm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
G130N06M	Goford Semiconductor	MOSFET N-CH 60V 90A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	90A (Tc)	4.5V, 10V	2.4V @ 250µA	-	-	±20V	-	85W (Tc)	12mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TN0200K-T1-E3	Vishay Siliconix	MOSFET N-CH 20V SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 730mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	730mA (Ta)	-	1V @ 50µA	2 nC @ 4.5 V	-	-	-	-	400mOhm @ 600mA, 4.5V	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3