Page 1382 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7464TRPBF
Infineon Technologies

MOSFET N-CH 200V 1.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock279,024
APT58M50JCU3
Microsemi Corporation

MOSFET N-CH 500V 58A SOT227

Package: SOT-227-4, miniBLOC

Stock5,440
IXTV280N055TS
IXYS

MOSFET N-CH 55V 280A PLUS220SMD

Package: PLUS-220SMD

Stock4,688
IRFIB7N50LPBF
Vishay Siliconix

MOSFET N-CH 500V 6.8A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,072
STP8NM50FP
STMicroelectronics

MOSFET N-CH 550V 8A TO-220FP

Package: TO-220-3 Full Pack

Stock130,056
SIPC30N60CFDX1SA1
Infineon Technologies

MOSFET COOL MOS 600V

Package: -

Stock3,920
FDD8N50NZTM
Fairchild/ON Semiconductor

MOSFET N-CH 500V 6.5A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,968
STL3NM60N
STMicroelectronics

MOSFET N-CH 600V 0.65A POWERFLAT

Package: 8-PowerVDFN

Stock6,876
IXFR44N50Q3
IXYS

MOSFET N-CH 500V 25A ISOPLUS247

Package: TO-247-3

Stock4,880
DMN3115UDM-7
Diodes Incorporated

MOSFET N-CH 30V 3.2A SOT-26

Package: SOT-23-6

Stock355,776
TK10A80W,S4X
Toshiba Semiconductor and Storage

MOSFET N-CH 800V 9.5A TO220-3

Package: TO-220-3 Full Pack

Stock7,728
IRFU9014PBF
Vishay Siliconix

MOSFET P-CH 60V 5.1A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock180,984
IPP65R045C7XKSA1
Infineon Technologies

MOSFET N-CH 650V 46A TO-220-3

Package: TO-220-3

Stock17,064
IXFN50N80Q2
IXYS

MOSFET N-CH 800V 50A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,344
PSMN014-40YS,115
Nexperia USA Inc.

MOSFET N-CH 40V LFPAK

Package: SC-100, SOT-669

Stock64,428
IPZA60R060P7XKSA1
Infineon Technologies

MOSFET N-CH 600V 48A TO247-4

Package: -

Request a Quote
NTD4404N1G
onsemi

POWER MOSFET, 85 A, 24 V, N-CHAN

Package: -

Request a Quote
2SK3353-Z-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

Package: -

Request a Quote
2SJ133-Z-E1-AZ
Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

Package: -

Request a Quote
RSJ400N10FRATL
Rohm Semiconductor

MOSFET N-CH 100V 40A LPTS

Package: -

Stock33

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7464TRPBF	Infineon Technologies	MOSFET N-CH 200V 1.2A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 730 mOhm @ 720mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock279,024	MOSFET (Metal Oxide)	200V	1.2A (Ta)	10V	5.5V @ 250µA	14nC @ 10V	280pF @ 25V	±30V	-	2.5W (Ta)	730 mOhm @ 720mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
APT58M50JCU3	Microsemi Corporation	MOSFET N-CH 500V 58A SOT227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 58A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 543W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 42A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,440	MOSFET (Metal Oxide)	500V	58A	10V	5V @ 2.5mA	340nC @ 10V	10800pF @ 25V	±30V	-	543W (Tc)	65 mOhm @ 42A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SOT-227	SOT-227-4, miniBLOC
IXTV280N055TS	IXYS	MOSFET N-CH 55V 280A PLUS220SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock4,688	MOSFET (Metal Oxide)	55V	280A (Tc)	10V	4V @ 250µA	200nC @ 10V	9800pF @ 25V	±20V	-	550W (Tc)	3.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
IRFIB7N50LPBF	Vishay Siliconix	MOSFET N-CH 500V 6.8A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,072	MOSFET (Metal Oxide)	500V	6.8A (Tc)	10V	5V @ 250µA	92nC @ 10V	2220pF @ 25V	±30V	-	46W (Tc)	380 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
STP8NM50FP	STMicroelectronics	MOSFET N-CH 550V 8A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.5A, 10V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock130,056	MOSFET (Metal Oxide)	550V	8A (Tc)	10V	5V @ 250µA	13nC @ 10V	415pF @ 25V	±30V	-	25W (Tc)	800 mOhm @ 2.5A, 10V	-65°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
SIPC30N60CFDX1SA1	Infineon Technologies	MOSFET COOL MOS 600V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,920	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDD8N50NZTM	Fairchild/ON Semiconductor	MOSFET N-CH 500V 6.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,968	MOSFET (Metal Oxide)	500V	6.5A (Tc)	10V	5V @ 250µA	18nC @ 10V	735pF @ 25V	±25V	-	90W (Tc)	850 mOhm @ 3.25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
STL3NM60N	STMicroelectronics	MOSFET N-CH 600V 0.65A POWERFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 188pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (3.3x3.3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,876	MOSFET (Metal Oxide)	600V	650mA (Ta), 2.2A (Tc)	10V	4V @ 250µA	9.5nC @ 10V	188pF @ 50V	±25V	-	2W (Ta), 22W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (3.3x3.3)	8-PowerVDFN
IXFR44N50Q3	IXYS	MOSFET N-CH 500V 25A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 154 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: TO-247-3	Package: TO-247-3	Stock4,880	MOSFET (Metal Oxide)	500V	25A (Tc)	10V	6.5V @ 4mA	93nC @ 10V	4800pF @ 25V	±30V	-	300W (Tc)	154 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	TO-247-3
DMN3115UDM-7	Diodes Incorporated	MOSFET N-CH 30V 3.2A SOT-26 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 476pF @ 15V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock355,776	MOSFET (Metal Oxide)	30V	3.2A (Ta)	1.5V, 4.5V	1V @ 250µA	-	476pF @ 15V	±8V	-	900mW (Ta)	60 mOhm @ 6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
TK10A80W,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 9.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 300V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4.8A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,728	MOSFET (Metal Oxide)	800V	9.5A (Ta)	10V	4V @ 450µA	19nC @ 10V	1150pF @ 300V	±20V	-	40W (Tc)	550 mOhm @ 4.8A, 10V	150°C	Through Hole	TO-220SIS	TO-220-3 Full Pack
IRFU9014PBF	Vishay Siliconix	MOSFET P-CH 60V 5.1A I-PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock180,984	MOSFET (Metal Oxide)	60V	5.1A (Tc)	10V	4V @ 250µA	12nC @ 10V	270pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	500 mOhm @ 3.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
IPP65R045C7XKSA1	Infineon Technologies	MOSFET N-CH 650V 46A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock17,064	MOSFET (Metal Oxide)	650V	46A (Tc)	10V	4V @ 1.25mA	93nC @ 10V	4340pF @ 400V	±20V	-	227W (Tc)	45 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IXFN50N80Q2	IXYS	MOSFET N-CH 800V 50A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,344	MOSFET (Metal Oxide)	800V	50A	10V	5.5V @ 8mA	260nC @ 10V	13500pF @ 25V	±30V	-	1135W (Tc)	160 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
PSMN014-40YS,115	Nexperia USA Inc.	MOSFET N-CH 40V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 702pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 56W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock64,428	MOSFET (Metal Oxide)	40V	46A (Tc)	10V	4V @ 1mA	12nC @ 10V	702pF @ 20V	±20V	-	56W (Tc)	14 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IPZA60R060P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 48A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 800µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	48A (Tc)	10V	4V @ 800µA	67 nC @ 10 V	2895 pF @ 400 V	±20V	-	164W (Tc)	60mOhm @ 15.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
NTD4404N1G	onsemi	POWER MOSFET, 85 A, 24 V, N-CHAN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK3353-Z-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	82A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
2SJ133-Z-E1-AZ	Renesas Electronics Corporation	POWER FIELD-EFFECT TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RSJ400N10FRATL	Rohm Semiconductor	MOSFET N-CH 100V 40A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.35W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 40A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock33	MOSFET (Metal Oxide)	100 V	40A (Tc)	4V, 10V	2.5V @ 1mA	90 nC @ 10 V	3600 pF @ 25 V	±20V	-	1.35W (Ta), 50W (Tc)	27mOhm @ 40A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MCACL120N10Y-TP	Micro Commercial Co	Interface FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 108W Rds On (Max) @ Id, Vgs: 4.2mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A	10V	4V @ 250µA	70 nC @ 10 V	4400 pF @ 50 V	±20V	-	108W	4.2mOhm @ 60A, 10V	-55°C ~ 150°C	Surface Mount	DFN5060	8-PowerTDFN
IAUZ30N10S5L240ATMA1	Infineon Technologies	MOSFET N-CH 100V 30A 8TSDSON-32 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 15µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45.5W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-32 Package / Case: 8-PowerTDFN	Package: -	Stock13,170	MOSFET (Metal Oxide)	100 V	30A (Tc)	4.5V, 10V	2.2V @ 15µA	14 nC @ 10 V	832 pF @ 50 V	±20V	-	45.5W (Tc)	24mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-32	8-PowerTDFN
2SK3617-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFW730BTM	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	5.5A (Tc)	10V	4V @ 250µA	33 nC @ 10 V	1000 pF @ 25 V	±30V	-	3.13W (Ta), 73W (Tc)	1Ohm @ 2.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
GT750P08K	Goford Semiconductor	MOSFET P-CH 80V 28A TO-252 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1981 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 70mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: -	Package: -	Stock7,500	MOSFET (Metal Oxide)	-	28A (Tc)	4.5V, 10V	3V @ 250µA	36 nC @ 10 V	1981 pF @ 40 V	±20V	-	-	70mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	-
STP45N60DM6	STMicroelectronics	MOSFET N-CH 600V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	30A (Tc)	10V	4.75V @ 250µA	44 nC @ 10 V	1920 pF @ 100 V	±25V	-	210W (Tc)	99mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
BUK7Y2R5-40HX	Nexperia USA Inc.	MOSFET N-CH 40V 120A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 25 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 190W (Ta) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	120A (Ta)	10V	3.6V @ 1mA	79 nC @ 10 V	4790 pF @ 25 V	+20V, -10V	-	190W (Ta)	2.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BSC0902NSATMA1	Infineon Technologies	MOSFET N-CH 30V 24A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Stock25,335	MOSFET (Metal Oxide)	30 V	24A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	26 nC @ 10 V	1700 pF @ 15 V	±20V	-	2.5W (Ta), 48W (Tc)	2.6mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN