Page 1385 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR3607
Infineon Technologies

MOSFET N-CH 75V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,488
SPB100N04S2L-03
Infineon Technologies

MOSFET N-CH 40V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock88,800
IRFD213
Vishay Siliconix

MOSFET N-CH 250V 450MA 4-DIP

Package: 4-DIP (0.300", 7.62mm)

Stock3,152
AON7702B
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13.5A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock4,736
SI7107DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 9.8A 1212-8

Package: PowerPAK? 1212-8

Stock17,844
IXTV22N50PS
IXYS

MOSFET N-CH 500V 22A PLUS220-SMD

Package: PLUS-220SMD

Stock2,976
FQU1N60TU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 1A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,840
IRFR110
Vishay Siliconix

MOSFET N-CH 100V 4.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock105,684
IRFZ34NSTRRPBF
Infineon Technologies

MOSFET N-CH 55V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock17,988
IPN70R1K0CEATMA1
Infineon Technologies

MOSFET COOLMOS 700V SOT223-3

Package: TO-261-4, TO-261AA

Stock4,368
5LP01C-TB-E
ON Semiconductor

MOSFET P-CH 50V 70MA CP

Package: TO-236-3, SC-59, SOT-23-3

Stock6,432
STP18NM60N
STMicroelectronics

MOSFET N-CH 600V 13A TO-220

Package: TO-220-3

Stock671,700
TSM7NC60CF C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, PLANA

Package: TO-220-3 Full Pack

Stock7,136
STF10N62K3
STMicroelectronics

MOSFET N-CH 620V 8.4A TO-220FP

Package: TO-220-3 Full Pack

Stock125,328
TSM60NB900CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
SSM3J338R,LF
Toshiba Semiconductor and Storage

MOSFET P-CH 12V 6A SOT23F

Package: SOT-23-3 Flat Leads

Stock4,816
SSM5N16FUTE85LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.1A USV

Package: 5-TSSOP, SC-70-5, SOT-353

Stock2,688
BSP122,115
Nexperia USA Inc.

MOSFET N-CH 200V 0.55A SOT223

Package: TO-261-4, TO-261AA

Stock22,836
SI4894BDY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,702,092
SQJ416EP-T1_GE3
Vishay Siliconix

MOSFET N-CH 100V 27A SO8

Package: PowerPAK? SO-8

Stock7,312

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR3607	Infineon Technologies	MOSFET N-CH 75V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3070pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 46A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,488	MOSFET (Metal Oxide)	75V	56A (Tc)	10V	4V @ 100µA	84nC @ 10V	3070pF @ 50V	±20V	-	140W (Tc)	9 mOhm @ 46A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SPB100N04S2L-03	Infineon Technologies	MOSFET N-CH 40V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock88,800	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 250µA	230nC @ 10V	8000pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFD213	Vishay Siliconix	MOSFET N-CH 250V 450MA 4-DIP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 2 Ohm @ 270mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: 4-DIP, Hexdip, HVMDIP Package / Case: 4-DIP (0.300", 7.62mm)	Package: 4-DIP (0.300", 7.62mm)	Stock3,152	MOSFET (Metal Oxide)	250V	450mA (Ta)	-	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	-	-	-	2 Ohm @ 270mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	4-DIP, Hexdip, HVMDIP	4-DIP (0.300", 7.62mm)
AON7702B	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 13.5A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 15V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,736	MOSFET (Metal Oxide)	30V	13.5A (Ta), 20A (Tc)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	810pF @ 15V	±20V	Schottky Diode (Body)	3.1W (Ta), 23W (Tc)	9.5 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
SI7107DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 9.8A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 450µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 15.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock17,844	MOSFET (Metal Oxide)	20V	9.8A (Ta)	1.8V, 4.5V	1V @ 450µA	44nC @ 4.5V	-	±8V	-	1.5W (Ta)	10.8 mOhm @ 15.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
IXTV22N50PS	IXYS	MOSFET N-CH 500V 22A PLUS220-SMD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PLUS-220SMD Package / Case: PLUS-220SMD	Package: PLUS-220SMD	Stock2,976	MOSFET (Metal Oxide)	500V	22A (Tc)	10V	5.5V @ 250µA	50nC @ 10V	2630pF @ 25V	±30V	-	350W (Tc)	270 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PLUS-220SMD	PLUS-220SMD
FQU1N60TU	Fairchild/ON Semiconductor	MOSFET N-CH 600V 1A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11.5 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,840	MOSFET (Metal Oxide)	600V	1A (Tc)	10V	5V @ 250µA	6nC @ 10V	150pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	11.5 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFR110	Vishay Siliconix	MOSFET N-CH 100V 4.3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock105,684	MOSFET (Metal Oxide)	100V	4.3A (Tc)	10V	4V @ 250µA	8.3nC @ 10V	180pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	540 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFZ34NSTRRPBF	Infineon Technologies	MOSFET N-CH 55V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock17,988	MOSFET (Metal Oxide)	55V	29A (Tc)	10V	4V @ 250µA	34nC @ 10V	700pF @ 25V	±20V	-	3.8W (Ta), 68W (Tc)	40 mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPN70R1K0CEATMA1	Infineon Technologies	MOSFET COOLMOS 700V SOT223-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 14.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 1 Ohm @ 1.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock4,368	MOSFET (Metal Oxide)	750V	7.4A (Tc)	10V	3.5V @ 150µA	14.9nC @ 10V	328pF @ 100V	±20V	-	5W (Tc)	1 Ohm @ 1.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-4, TO-261AA
5LP01C-TB-E	ON Semiconductor	MOSFET P-CH 50V 70MA CP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7.4pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 23 Ohm @ 40mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-CP Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock6,432	MOSFET (Metal Oxide)	50V	70mA (Ta)	1.5V, 4V	-	1.4nC @ 10V	7.4pF @ 10V	±10V	-	250mW (Ta)	23 Ohm @ 40mA, 4V	150°C (TJ)	Surface Mount	3-CP	TO-236-3, SC-59, SOT-23-3
STP18NM60N	STMicroelectronics	MOSFET N-CH 600V 13A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 285 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock671,700	MOSFET (Metal Oxide)	600V	13A (Tc)	10V	4V @ 250µA	35nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	285 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
TSM7NC60CF C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, PLANA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1169pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44.6W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220S Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,136	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4.5V @ 250µA	24nC @ 10V	1169pF @ 50V	±30V	-	44.6W (Tc)	1.2 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220S	TO-220-3 Full Pack
STF10N62K3	STMicroelectronics	MOSFET N-CH 620V 8.4A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock125,328	MOSFET (Metal Oxide)	620V	8.4A (Tc)	10V	4.5V @ 100µA	42nC @ 10V	1250pF @ 50V	±30V	-	30W (Tc)	750 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
TSM60NB900CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 36.8W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4V @ 250µA	9.6nC @ 10V	315pF @ 100V	±30V	-	36.8W (Tc)	900 mOhm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SSM3J338R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A SOT23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 17.6 mOhm @ 6A, 8V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	Package: SOT-23-3 Flat Leads	Stock4,816	MOSFET (Metal Oxide)	12V	6A (Ta)	1.8V, 8V	1V @ 1mA	19.5nC @ 4.5V	1400pF @ 6V	±10V	-	1W (Ta)	17.6 mOhm @ 6A, 8V	150°C (TJ)	Surface Mount	SOT-23F	SOT-23-3 Flat Leads
SSM5N16FUTE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 0.1A USV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 3 Ohm @ 10mA, 4V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	Package: 5-TSSOP, SC-70-5, SOT-353	Stock2,688	MOSFET (Metal Oxide)	20V	100mA (Ta)	1.5V, 4V	-	-	9.3pF @ 3V	±10V	-	200mW (Ta)	3 Ohm @ 10mA, 4V	150°C (TJ)	Surface Mount	USV	5-TSSOP, SC-70-5, SOT-353
BSP122,115	Nexperia USA Inc.	MOSFET N-CH 200V 0.55A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 550mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 750mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock22,836	MOSFET (Metal Oxide)	200V	550mA (Ta)	2.4V, 10V	2V @ 1mA	-	100pF @ 25V	±20V	-	1.5W (Ta)	2.5 Ohm @ 750mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
SI4894BDY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,702,092	MOSFET (Metal Oxide)	30V	8.9A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	1580pF @ 15V	±20V	-	1.4W (Ta)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SQJ416EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 27A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock7,312	MOSFET (Metal Oxide)	100V	27A (Tc)	10V	3.5V @ 250µA	20nC @ 10V	800pF @ 25V	±20V	-	45W (Tc)	30 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
FDMS8558SDC	Fairchild/ON Semiconductor	MOSFET N-CH 25V 33A 8-PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5118pF @ 13V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Dual Cool?56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock56,994	MOSFET (Metal Oxide)	25V	38A (Ta), 90A (Tc)	4.5V, 10V	2.2V @ 1mA	81nC @ 10V	5118pF @ 13V	±12V	-	2.5W (Ta), 89W (Tc)	1.5 mOhm @ 33A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Dual Cool?56	8-PowerTDFN
IXTA6N50D2	IXYS	MOSFET N-CH 500V 6A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 96nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 3A, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock18,396	MOSFET (Metal Oxide)	500V	6A (Tc)	-	-	96nC @ 5V	2800pF @ 25V	±20V	Depletion Mode	300W (Tc)	500 mOhm @ 3A, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPA17N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Stock1,194	MOSFET (Metal Oxide)	800 V	17A (Tc)	10V	3.9V @ 1mA	177 nC @ 10 V	2320 pF @ 25 V	±20V	-	42W (Tc)	290mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
IRFF322	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	2A (Tc)	10V	4V @ 250µA	15 nC @ 10 V	450 pF @ 25 V	20V	-	20W (Tc)	2.5Ohm @ 1.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
IPP60R210CFD7XKSA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock1,425	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4.5V @ 240µA	23 nC @ 10 V	1015 pF @ 400 V	±20V	-	64W (Tc)	210mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
PJA3413_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 3.4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock261,936	MOSFET (Metal Oxide)	20 V	3.4A (Ta)	1.8V, 4.5V	1.2V @ 250µA	7 nC @ 4.5 V	522 pF @ 10 V	±12V	-	1.25W (Ta)	82mOhm @ 3.4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
2SK1160-E	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PMH950UPEH	Nexperia USA Inc.	MOSFET P-CH 20V 530MA DFN0606-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN0606-3 Package / Case: 3-XFDFN	Package: -	Stock50,352	MOSFET (Metal Oxide)	20 V	530mA (Ta)	1.2V, 4.5V	950mV @ 250µA	0.5 nC @ 4 V	36 pF @ 10 V	±8V	-	370mW (Ta), 2.2W (Tc)	1.4Ohm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN0606-3	3-XFDFN