Page 1383 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF6713STR1PBF
Infineon Technologies

MOSFET N-CH 25V 22A DIRECTFET

Package: DirectFET? Isometric SQ

Stock2,320
IRF6648TR1PBF
Infineon Technologies

MOSFET N-CH 60V 86A DIRECTFET

Package: DirectFET? Isometric MN

Stock192,336
IRLR3715ZTRL
Infineon Technologies

MOSFET N-CH 20V 49A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock28,800
AO4476A_103
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 15A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,408
AOI530
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 70A TO-251

Package: TO-251-3 Stub Leads, IPak

Stock5,776
NP55N055SDG-E1-AY
Renesas Electronics America

MOSFET N-CH 55V 55A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
SUP85N02-03-E3
Vishay Siliconix

MOSFET N-CH 20V 85A TO220AB

Package: TO-220-3

Stock5,904
SPP04N60C3XKSA1
Infineon Technologies

MOSFET N-CH 600V 4.5A TO-220

Package: TO-220-3

Stock7,744
IPP100N04S303AKSA1
Infineon Technologies

MOSFET N-CH 40V 100A TO220-3

Package: TO-220-3

Stock3,248
APT20M22LVFRG
Microsemi Corporation

MOSFET N-CH 200V 100A TO-264

Package: TO-264-3, TO-264AA

Stock6,464
IXTH11P50
IXYS

MOSFET P-CH 500V 11A TO-247AD

Package: TO-247-3

Stock5,440
RJK0301DPB-02#J0
Renesas Electronics America

MOSFET N-CH 30V 60A 5-LFPAK

Package: SC-100, SOT-669

Stock2,448
SKI03021
Sanken

MOSFET N-CH 30V 85A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,784
SSM3J355R,LF
Toshiba Semiconductor and Storage

SMALL LOW ON RESISTANCE MOSFET

Package: -

Stock6,848
STD2N80K5
STMicroelectronics

MOSFET N-CH 800V 2A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,688
GKI06109
Sanken

MOSFET N-CH 60V 9A 8DFN

Package: 8-PowerTDFN

Stock4,624
FDS86242
Fairchild/ON Semiconductor

MOSFET N-CH 150V 4.1A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock442,296
STD5N60DM2
STMicroelectronics

N-CHANNEL 600 V, 0.26 OHM TYP.,

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,480
CSD25484F4T
Texas Instruments

MOSFET P-CH 20V 2.5A 3PICOSTAR

Package: 3-XFDFN

Stock28,080
DMG2307L-7
Diodes Incorporated

MOSFET P-CH 30V 2.5A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock143,292

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF6713STR1PBF	Infineon Technologies	MOSFET N-CH 25V 22A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.2W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 22A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? SQ Package / Case: DirectFET? Isometric SQ	Package: DirectFET? Isometric SQ	Stock2,320	MOSFET (Metal Oxide)	25V	22A (Ta), 95A (Tc)	4.5V, 10V	2.4V @ 50µA	32nC @ 4.5V	2880pF @ 13V	±20V	-	2.2W (Ta), 42W (Tc)	3 mOhm @ 22A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? SQ	DirectFET? Isometric SQ
IRF6648TR1PBF	Infineon Technologies	MOSFET N-CH 60V 86A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 17A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MN Package / Case: DirectFET? Isometric MN	Package: DirectFET? Isometric MN	Stock192,336	MOSFET (Metal Oxide)	60V	86A (Tc)	10V	4.9V @ 150µA	50nC @ 10V	2120pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	7 mOhm @ 17A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MN	DirectFET? Isometric MN
IRLR3715ZTRL	Infineon Technologies	MOSFET N-CH 20V 49A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock28,800	MOSFET (Metal Oxide)	20V	49A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	810pF @ 10V	±20V	-	40W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
AO4476A_103	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 15A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,408	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.5V @ 250µA	24nC @ 10V	1380pF @ 15V	±20V	-	3.1W (Ta)	7.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AOI530	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 70A TO-251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock5,776	MOSFET (Metal Oxide)	30V	23A (Ta), 70A (Tc)	4.5V, 10V	2.2V @ 250µA	62nC @ 10V	3130pF @ 15V	±20V	-	2.5W (Ta), 83W (Tc)	2.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
NP55N055SDG-E1-AY	Renesas Electronics America	MOSFET N-CH 55V 55A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 28A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (MP-3ZK) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	55V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	96nC @ 10V	4800pF @ 25V	±20V	-	1.2W (Ta), 77W (Tc)	9.5 mOhm @ 28A, 10V	175°C (TJ)	Surface Mount	TO-252 (MP-3ZK)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUP85N02-03-E3	Vishay Siliconix	MOSFET N-CH 20V 85A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 2mA (Min) Gate Charge (Qg) (Max) @ Vgs: 200nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 21250pF @ 20V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock5,904	MOSFET (Metal Oxide)	20V	85A (Tc)	2.5V, 4.5V	450mV @ 2mA (Min)	200nC @ 4.5V	21250pF @ 20V	±8V	-	250W (Tc)	3 mOhm @ 30A, 4.5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPP04N60C3XKSA1	Infineon Technologies	MOSFET N-CH 600V 4.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock7,744	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	3.9V @ 200µA	25nC @ 10V	490pF @ 25V	±20V	-	50W (Tc)	950 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IPP100N04S303AKSA1	Infineon Technologies	MOSFET N-CH 40V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,248	MOSFET (Metal Oxide)	40V	100A (Tc)	10V	4V @ 150µA	145nC @ 10V	9600pF @ 25V	±20V	-	214W (Tc)	2.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
APT20M22LVFRG	Microsemi Corporation	MOSFET N-CH 200V 100A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 435nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,464	MOSFET (Metal Oxide)	200V	100A (Tc)	10V	4V @ 2.5mA	435nC @ 10V	10200pF @ 25V	±30V	-	520W (Tc)	22 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXTH11P50	IXYS	MOSFET P-CH 500V 11A TO-247AD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock5,440	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	5V @ 250µA	130nC @ 10V	4700pF @ 25V	±20V	-	300W (Tc)	750 mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
RJK0301DPB-02#J0	Renesas Electronics America	MOSFET N-CH 30V 60A 5-LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 10V Vgs (Max): +16V, -12V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,448	MOSFET (Metal Oxide)	30V	60A (Ta)	4.5V, 10V	-	32nC @ 4.5V	5000pF @ 10V	+16V, -12V	-	65W (Tc)	2.8 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	5-LFPAK	SC-100, SOT-669
SKI03021	Sanken	MOSFET N-CH 30V 85A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 94.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 110A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,784	MOSFET (Metal Oxide)	30V	85A (Tc)	4.5V, 10V	2.5V @ 1.5mA	94.2nC @ 10V	6200pF @ 15V	±20V	-	135W (Tc)	2.4 mOhm @ 110A, 10V	150°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SSM3J355R,LF	Toshiba Semiconductor and Storage	SMALL LOW ON RESISTANCE MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30.1 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	Package: -	Stock6,848	MOSFET (Metal Oxide)	20V	6A (Ta)	1.8V, 4.5V	1V @ 1mA	16.6nC @ 4.5V	1030pF @ 10V	±10V	-	1W (Ta)	30.1 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	-	-
STD2N80K5	STMicroelectronics	MOSFET N-CH 800V 2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 100V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,688	MOSFET (Metal Oxide)	800V	2A (Tc)	10V	5V @ 100µA	3nC @ 10V	95pF @ 100V	30V	-	45W (Tc)	4.5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
GKI06109	Sanken	MOSFET N-CH 60V 9A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 38.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 23.6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,624	MOSFET (Metal Oxide)	60V	9A (Ta)	4.5V, 10V	2.5V @ 650µA	38.6nC @ 10V	2520pF @ 25V	±20V	-	3.1W (Ta), 59W (Tc)	8.9 mOhm @ 23.6A, 10V	150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN
FDS86242	Fairchild/ON Semiconductor	MOSFET N-CH 150V 4.1A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 67 mOhm @ 4.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock442,296	MOSFET (Metal Oxide)	150V	4.1A (Ta)	6V, 10V	4V @ 250µA	13nC @ 10V	760pF @ 75V	±20V	-	2.5W (Ta), 5W (Tc)	67 mOhm @ 4.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STD5N60DM2	STMicroelectronics	N-CHANNEL 600 V, 0.26 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.55 Ohm @ 1.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,480	MOSFET (Metal Oxide)	600V	3.5A (Tc)	10V	5V @ 250µA	8.6nC @ 10V	375pF @ 100V	±30V	-	45W (Tc)	1.55 Ohm @ 1.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
CSD25484F4T	Texas Instruments	MOSFET P-CH 20V 2.5A 3PICOSTAR FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): -12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 94 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	Package: 3-XFDFN	Stock28,080	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 8V	1.2V @ 250µA	1.42nC @ 4.5V	230pF @ 10V	-12V	-	500mW (Ta)	94 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
DMG2307L-7	Diodes Incorporated	MOSFET P-CH 30V 2.5A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 371.3pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock143,292	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4.5V, 10V	3V @ 250µA	8.2nC @ 10V	371.3pF @ 15V	±20V	-	760mW (Ta)	90 mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
FDS8433A-G	Fairchild Semiconductor	FDS8433A - MOSFET 20V 47.0 MOHM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	5A (Ta)	2.5V, 4.5V	1V @ 250µA	28 nC @ 5 V	1130 pF @ 10 V	±8V	-	2.5W (Ta)	47mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
SQJA82EP-T1_BE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 10 V	3000 pF @ 25 V	±20V	-	68W (Tc)	8.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPB65R050CFD7AATMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	45A (Tc)	10V	4.5V @ 1.24mA	102 nC @ 10 V	4975 pF @ 400 V	±30V	-	227W (Tc)	50mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
EPC2034C	EPC	GANFET N-CH 200V 48A DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 100 V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Stock38,673	GaNFET (Gallium Nitride)	200 V	48A (Ta)	5V	2.5V @ 7mA	11 nC @ 5 V	1140 pF @ 100 V	+6V, -4V	-	-	8mOhm @ 20A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
TSM480P06CZ-C0G	Taiwan Semiconductor Corporation	MOSFET P-CH 60V 20A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	20A (Tc)	4.5V, 10V	2.2V @ 250µA	22.4 nC @ 10 V	1250 pF @ 30 V	±20V	-	66W (Tc)	48mOhm @ 8A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IRF6216TRPBF-1	Infineon Technologies	MOSFET P-CH 150V 2.2A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	2.2A (Ta)	10V	5V @ 250µA	49 nC @ 10 V	1280 pF @ 25 V	±20V	-	2.5W (Ta)	240mOhm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
MCAC50N03-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 38W Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock12,894	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.3V @ 250µA	15 nC @ 10 V	1490 pF @ 15 V	±20V	-	38W	9mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
SUP70101EL-GE3	Vishay Siliconix	MOSFET P-CH 100V 120A TO220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	190 nC @ 10 V	7000 pF @ 50 V	±20V	-	375W (Tc)	-	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3