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Infineon Technologies |
MOSFET N-CH 30V 65A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 10 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,712 |
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MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | ±20V | - | 75W (Tc) | 10 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 0.09A SOT-89
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 131pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT89
- Package / Case: TO-243AA
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Package: TO-243AA |
Stock7,952 |
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MOSFET (Metal Oxide) | 600V | 90mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 5.8nC @ 10V | 131pF @ 25V | ±20V | - | 1W (Ta) | 45 Ohm @ 90mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 57W (Tc)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock5,952 |
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MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 4V @ 250µA | 32nC @ 10V | 650pF @ 25V | ±20V | - | 57W (Tc) | 110 mOhm @ 9.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock145,284 |
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MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 1V @ 250µA | 78nC @ 10V | 2240pF @ 15V | ±20V | - | 2.5W (Ta) | 9 mOhm @ 12.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 8V 1.6A SOT363
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 4V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1.47W (Ta), 2.27W (Tc)
- Rds On (Max) @ Id, Vgs: 112 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6 (SOT-363)
- Package / Case: 6-TSSOP, SC-88, SOT-363
|
Package: 6-TSSOP, SC-88, SOT-363 |
Stock1,010,220 |
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MOSFET (Metal Oxide) | 8V | 1.6A (Tc) | 1.8V, 4.5V | 950mV @ 250µA | 5.5nC @ 4.5V | 305pF @ 4V | ±8V | - | 1.47W (Ta), 2.27W (Tc) | 112 mOhm @ 2.8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET N-CH 240V 1.52A SC70-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240V
- Current - Continuous Drain (Id) @ 25°C: 1.52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 167pF @ 120V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 15W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 Ohm @ 700mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? SC-70-6 Single
- Package / Case: PowerPAK? SC-70-6
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Package: PowerPAK? SC-70-6 |
Stock431,196 |
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MOSFET (Metal Oxide) | 240V | 1.52A (Tc) | 2.5V, 10V | 2.4V @ 250µA | 7.04nC @ 10V | 167pF @ 120V | ±20V | - | 3.3W (Ta), 15W (Tc) | 2.9 Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-70-6 Single | PowerPAK? SC-70-6 |
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ON Semiconductor |
MOSFET N-CH 60V 27A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 88.2W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock390,000 |
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MOSFET (Metal Oxide) | 60V | 27A (Ta) | 10V | 4V @ 250µA | 46nC @ 10V | 1200pF @ 25V | ±20V | - | 88.2W (Tc) | 42 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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NXP |
MOSFET N-CH 25V 75A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock7,376 |
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MOSFET (Metal Oxide) | 25V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 33nC @ 5V | 1660pF @ 25V | ±15V | - | 115W (Tc) | 9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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NXP |
MOSFET N-CH 200V 4.8A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,912 |
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MOSFET (Metal Oxide) | 200V | 4.8A (Tc) | 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | ±20V | - | 42W (Tc) | 800 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,296 |
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MOSFET (Metal Oxide) | 55V | 50A (Tc) | 4.5V, 10V | 2V @ 80µA | 69nC @ 10V | 1800pF @ 25V | ±20V | - | 136W (Tc) | 12.7 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET BVDSS: 501V 650V TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: TO-220-3 |
Stock5,872 |
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MOSFET (Metal Oxide) | 600V | 3.3A (Tc) | 10V | 4V @ 250µA | 12.6nC @ 10V | 354pF @ 25V | ±30V | - | 104W (Tc) | 3.5 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 20A 1212-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
- Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK? 1212-8
- Package / Case: PowerPAK? 1212-8
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Package: PowerPAK? 1212-8 |
Stock138,780 |
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MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 30nC @ 10V | 997pF @ 15V | ±20V | - | 3.5W (Ta), 28W (Tc) | 8.9 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
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Diodes Incorporated |
MOSFET N-CH 650V 4A ITO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 8.35W (Ta)
- Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock5,168 |
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MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 5V @ 250µA | 13.5nC @ 10V | 900pF @ 25V | ±30V | - | 8.35W (Ta) | 3 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Rohm Semiconductor |
MOSFET N-CH 20V 0.18A VML1006
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V
- Vgs (Max): ±10V
- FET Feature: -
- Power Dissipation (Max): 100mW (Ta)
- Rds On (Max) @ Id, Vgs: 2 Ohm @ 150mA, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VML1006
- Package / Case: SC-101, SOT-883
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Package: SC-101, SOT-883 |
Stock4,000 |
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MOSFET (Metal Oxide) | 20V | 180mA (Ta) | 1.2V, 4.5V | 1V @ 100µA | - | 12pF @ 10V | ±10V | - | 100mW (Ta) | 2 Ohm @ 150mA, 4.5V | 150°C (TJ) | Surface Mount | VML1006 | SC-101, SOT-883 |
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IXYS |
MOSFET N-CH 1000V 38A SOT-227B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 38A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1000W (Tc)
- Rds On (Max) @ Id, Vgs: 210 mOhm @ 19A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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Package: SOT-227-4, miniBLOC |
Stock6,180 |
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MOSFET (Metal Oxide) | 1000V | 38A | 10V | 6.5V @ 1mA | 350nC @ 10V | 24000pF @ 25V | ±30V | - | 1000W (Tc) | 210 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 650V 16.4A 4VSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 660µA
- Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Rds On (Max) @ Id, Vgs: 199 mOhm @ 9.9A, 10V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-4
- Package / Case: 4-PowerTSFN
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Package: 4-PowerTSFN |
Stock5,680 |
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MOSFET (Metal Oxide) | 650V | 16.4A (Tc) | 10V | 3.5V @ 660µA | 32nC @ 10V | 1520pF @ 100V | ±20V | - | 139W (Tc) | 199 mOhm @ 9.9A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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IXYS |
MOSFET ULTRA JCT 600V 36A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 446W (Tc)
- Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA (IXFA)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Stock90 |
|
MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 5V @ 2.5mA | 29 nC @ 10 V | 2030 pF @ 25 V | ±20V | - | 446W (Tc) | 90mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA (IXFA) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 14A TO263-3-2
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 400 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Stock3,000 |
|
MOSFET (Metal Oxide) | 600 V | 14A (Tc) | 10V | 4.5V @ 300µA | 28 nC @ 10 V | 1190 pF @ 400 V | ±20V | - | 75W (Tc) | 170mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 120A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 60A, 6V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock8,601 |
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MOSFET (Metal Oxide) | 40 V | 120A (Ta) | 6V, 10V | 3V @ 500µA | 103 nC @ 10 V | 5500 pF @ 10 V | ±20V | - | 180W (Tc) | 1.9mOhm @ 60A, 6V | 175°C | Surface Mount | DPAK+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 150V 53.7A PPAK SO-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 53.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1286 pF @ 75 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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Package: - |
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MOSFET (Metal Oxide) | 150 V | 53.7A (Tc) | 7.5V, 10V | 4.5V @ 250µA | 47 nC @ 10 V | 1286 pF @ 75 V | ±20V | - | 104W (Tc) | 18mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 80V 28A 8TDSON-33
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-33
- Package / Case: 8-PowerTDFN
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Package: - |
Stock48,285 |
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MOSFET (Metal Oxide) | 80 V | 28A (Tc) | 4.5V, 10V | 2V @ 11µA | 15.1 nC @ 10 V | 867 pF @ 40 V | ±20V | - | 38W (Tc) | 23mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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onsemi |
MOSFET N-CH 30V 21A 8MLP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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Package: - |
Stock9,000 |
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MOSFET (Metal Oxide) | 30 V | 21A (Tc) | - | 3V @ 1mA | 52 nC @ 10 V | 3165 pF @ 15 V | - | - | - | 4.4mOhm @ 19A, 10V | - | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Microchip Technology |
MOSFET N-CH 700V TO247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 283W (Tc)
- Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: - |
Stock60 |
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SiCFET (Silicon Carbide) | 700 V | 77A (Tc) | 20V | 2.7V @ 2mA | 99 nC @ 20 V | 2010 pF @ 700 V | +25V, -10V | - | 283W (Tc) | 44mOhm @ 30A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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onsemi |
MOSFET N-CH 60V 29A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 29A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
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MOSFET (Metal Oxide) | 60 V | 29A (Tc) | 10V | 3V @ 250µA | 28.5 nC @ 10 V | 870 pF @ 25 V | ±16V | - | 100W (Tc) | 35mOhm @ 29A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 3A UFM
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 1A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UFM
- Package / Case: 3-SMD, Flat Leads
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Package: - |
Stock18,093 |
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MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | 270 pF @ 10 V | ±8V | - | 500mW (Ta) | 103mOhm @ 1A, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 60V 100A TO252AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Stock3,525 |
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MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 90 nC @ 10 V | 6100 pF @ 25 V | ±20V | - | 107W (Tc) | 4mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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MOSLEADER |
Single P -30V -3.2A SOT-23S
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
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