Page 1398 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPI22N03S4L15AKSA1
Infineon Technologies

MOSFET N-CH 30V 22A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,296
NVD5413NT4G
ON Semiconductor

MOSFET N-CH 60V 30A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,248
FQD30N06TF_F080
Fairchild/ON Semiconductor

MOSFET N-CH 60V 22.7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,936
DMN3031LSS-13
Diodes Incorporated

MOSFET N-CH 30V 9A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock295,800
FQB4N90TM
Fairchild/ON Semiconductor

MOSFET N-CH 900V 4.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,616
BTS244ZE3062AATMA2
Infineon Technologies

MOSFET N-CH 55V 35A TO220-5

Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Stock4,800
STD15N50M2AG
STMicroelectronics

MOSFET N-CH 500V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,192
PSMN015-100YLX
Nexperia USA Inc.

MOSFET N-CH 100V LFPAK56

Package: SC-100, SOT-669

Stock2,064
FQP9N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 9A TO-220

Package: TO-220-3

Stock105,864
BSZ100N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 40A TDSON-8

Package: 8-PowerTDFN

Stock4,656
BUK7506-55A,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

Package: TO-220-3

Stock54,768
DMN3016LPS-13
Diodes Incorporated

MOSFET N-CH 30V 10.8A PWRDI8

Package: 8-PowerTDFN

Stock7,168
FCB20N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock170,244
HUF76407D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,060
IXTH02N250
IXYS

MOSFET N-CH 2500V 0.2A TO247

Package: TO-247-3

Stock7,648
CSD16321Q5C
Texas Instruments

MOSFET N-CH 25V 100A 8SON

Package: 8-PowerTDFN

Stock308,592
FDV305N
Fairchild/ON Semiconductor

MOSFET N-CH 20V 0.9A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock503,136
RJK5031DPD-01-J2
Renesas Electronics Corporation

MOSFET N-CH 500V 3A MP3A

Package: -

Request a Quote
PSMN2R2-40YSBX
Nexperia USA Inc.

PSMN2R2-40YSB/SOT669/LFPAK

Package: -

Request a Quote
STU6N65M2-S
STMicroelectronics

MOSFET N-CH 650V 4A IPAK

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPI22N03S4L15AKSA1	Infineon Technologies	MOSFET N-CH 30V 22A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,296	MOSFET (Metal Oxide)	30V	22A (Tc)	4.5V, 10V	2.2V @ 10µA	14nC @ 10V	980pF @ 25V	±16V	-	31W (Tc)	14.9 mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I2Pak, TO-262AA
NVD5413NT4G	ON Semiconductor	MOSFET N-CH 60V 30A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,248	MOSFET (Metal Oxide)	60V	30A (Tc)	10V	4V @ 250µA	46nC @ 10V	1725pF @ 25V	±20V	-	68W (Tc)	26 mOhm @ 20A, 10V	-	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD30N06TF_F080	Fairchild/ON Semiconductor	MOSFET N-CH 60V 22.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 945pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,936	MOSFET (Metal Oxide)	60V	22.7A (Tc)	10V	4V @ 250µA	25nC @ 10V	945pF @ 25V	±25V	-	2.5W (Ta), 44W (Tc)	45 mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN3031LSS-13	Diodes Incorporated	MOSFET N-CH 30V 9A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock295,800	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2.1V @ 250µA	25nC @ 10V	741pF @ 15V	±20V	-	2.5W (Ta)	18.5 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FQB4N90TM	Fairchild/ON Semiconductor	MOSFET N-CH 900V 4.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,616	MOSFET (Metal Oxide)	900V	4.2A (Tc)	10V	5V @ 250µA	30nC @ 10V	1100pF @ 25V	±30V	-	3.13W (Ta), 140W (Tc)	3.3 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BTS244ZE3062AATMA2	Infineon Technologies	MOSFET N-CH 55V 35A TO220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 19A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-5 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Package: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	Stock4,800	MOSFET (Metal Oxide)	55V	35A (Tc)	4.5V, 10V	2V @ 130µA	130nC @ 10V	2660pF @ 25V	±20V	Temperature Sensing Diode	170W (Tc)	13 mOhm @ 19A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO263-5	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
STD15N50M2AG	STMicroelectronics	MOSFET N-CH 500V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,192	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4V @ 250µA	13nC @ 10V	530pF @ 100V	±30V	-	85W (Tc)	380 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN015-100YLX	Nexperia USA Inc.	MOSFET N-CH 100V LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 86.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6139pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 195W (Tc) Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock2,064	MOSFET (Metal Oxide)	100V	69A (Tc)	5V, 10V	2.1V @ 1mA	86.3nC @ 10V	6139pF @ 25V	±20V	-	195W (Tc)	14.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
FQP9N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 9A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 98W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock105,864	MOSFET (Metal Oxide)	300V	9A (Tc)	10V	5V @ 250µA	22nC @ 10V	750pF @ 25V	±30V	-	98W (Tc)	450 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSZ100N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 40A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,656	MOSFET (Metal Oxide)	30V	10A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	23nC @ 10V	1700pF @ 15V	±20V	-	2.1W (Ta), 30W (Tc)	9.1 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
BUK7506-55A,127	Nexperia USA Inc.	MOSFET N-CH 55V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock54,768	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 1mA	-	6000pF @ 25V	±20V	-	300W (Tc)	6.3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN3016LPS-13	Diodes Incorporated	MOSFET N-CH 30V 10.8A PWRDI8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.18W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI5060-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,168	MOSFET (Metal Oxide)	30V	10.8A (Ta)	4.5V, 10V	2V @ 250µA	25.1nC @ 10V	1415pF @ 15V	±20V	-	1.18W (Ta)	12 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI5060-8	8-PowerTDFN
FCB20N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 20A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock170,244	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	98nC @ 10V	3080pF @ 25V	±30V	-	208W (Tc)	190 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HUF76407D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 92 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,060	MOSFET (Metal Oxide)	60V	12A (Tc)	4.5V, 10V	3V @ 250µA	11.3nC @ 10V	350pF @ 25V	±16V	-	38W (Tc)	92 mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTH02N250	IXYS	MOSFET N-CH 2500V 0.2A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 2500V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 116pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 450 Ohm @ 50mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,648	MOSFET (Metal Oxide)	2500V	200mA (Tc)	10V	4.5V @ 250µA	7.4nC @ 10V	116pF @ 25V	±20V	-	83W (Tc)	450 Ohm @ 50mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
CSD16321Q5C	Texas Instruments	MOSFET N-CH 25V 100A 8SON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 12.5V Vgs (Max): +10V, -8V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock308,592	MOSFET (Metal Oxide)	25V	31A (Ta), 100A (Tc)	3V, 8V	1.4V @ 250µA	19nC @ 4.5V	3100pF @ 12.5V	+10V, -8V	-	3.1W (Ta)	2.4 mOhm @ 25A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON-CLIP (5x6)	8-PowerTDFN
FDV305N	Fairchild/ON Semiconductor	MOSFET N-CH 20V 0.9A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 900mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock503,136	MOSFET (Metal Oxide)	20V	900mA (Ta)	2.5V, 4.5V	1.5V @ 250µA	1.5nC @ 4.5V	109pF @ 10V	±12V	-	350mW (Ta)	220 mOhm @ 900mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
RJK5031DPD-01-J2	Renesas Electronics Corporation	MOSFET N-CH 500V 3A MP3A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 1.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: MP-3A Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	3A (Ta)	10V	4.5V @ 1mA	-	280 pF @ 25 V	±30V	-	40.3W (Tc)	3.2Ohm @ 1.5A, 10V	150°C	Surface Mount	MP-3A	TO-252-3, DPAK (2 Leads + Tab), SC-63
PSMN2R2-40YSBX	Nexperia USA Inc.	PSMN2R2-40YSB/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5173 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 166W (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	180A (Ta)	10V	3.6V @ 1mA	69 nC @ 10 V	5173 pF @ 20 V	±20V	Schottky Diode (Body)	166W (Ta)	2.2mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
STU6N65M2-S	STMicroelectronics	MOSFET N-CH 650V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	4A (Tc)	10V	4V @ 250µA	9.8 nC @ 10 V	226 pF @ 100 V	±25V	-	60W (Tc)	1.35Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPak, TO-251AA
IAUT300N08S5N011ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 410A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock9,675	MOSFET (Metal Oxide)	80 V	410A (Tj)	6V, 10V	3.8V @ 275µA	231 nC @ 10 V	16250 pF @ 40 V	±20V	-	375W (Tc)	1.1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
SI7172ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 200V PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 17.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50mOhm @ 10A, 10V Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.3A (Ta), 17.2A (Tc)	7.5V, 10V	3.1V @ 250µA	19.5 nC @ 10 V	1110 pF @ 100 V	±20V	-	-	50mOhm @ 10A, 10V	-55°C ~ 125°C	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPD65R660CFDATMA2	Infineon Technologies	MOSFET N-CH 700V 6A TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,481	MOSFET (Metal Oxide)	700 V	6A (Tc)	10V	4.5V @ 200µA	22 nC @ 10 V	615 pF @ 100 V	±20V	-	63W (Tc)	660mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMT10H032LSS-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V SO-8 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 683 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	5A (Ta)	4.5V, 10V	2.5V @ 250µA	11.9 nC @ 10 V	683 pF @ 50 V	±20V	-	1.3W (Ta)	32mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI4467DYBAA005AP	onsemi	MOSFET P-CH 20V 13.5A 8SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
XP3N045EN	YAGEO XSEMI	MOSFET N-CH 30V 4.3A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	30 V	4.3A (Ta)	4.5V, 10V	3V @ 250µA	11.5 nC @ 4.5 V	1330 pF @ 15 V	±20V	-	1.25W (Ta)	45mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
HAT2203C-EL-E	Renesas	HAT2203C-EL-E - SILICON N CHANNE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 1A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CMFPAK Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2A (Ta)	2.5V, 4.5V	1.4V @ 1mA	1.8 nC @ 4.5 V	165 pF @ 10 V	±12V	-	830mW (Ta)	90mOhm @ 1A, 4.5V	150°C	Surface Mount	6-CMFPAK	6-SMD, Flat Leads
AUIRLR3636TRL	Infineon Technologies	MOSFET N-CH 60V 99A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	50A (Tc)	-	2.5V @ 100µA	49 nC @ 4.5 V	3779 pF @ 50 V	-	-	143W (Tc)	6.8mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63