Page 1445 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SPP100N03S2L03
Infineon Technologies

MOSFET N-CH 30V 100A TO-220AB

Package: TO-220-3

Stock3,216
IPD09N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock28,884
PHP21N06T,127
NXP

MOSFET N-CH 55V 21A TO220AB

Package: TO-220-3

Stock3,440
PHM30NQ10T,518
NXP

MOSFET N-CH 100V 37.6A 8HVSON

Package: 8-VDFN Exposed Pad

Stock6,032
ZVN1409ASTOA
Diodes Incorporated

MOSFET N-CH 90V 0.01A TO92-3

Package: E-Line-3

Stock4,352
RFG60P05E
Fairchild/ON Semiconductor

MOSFET P-CH 50V 60A TO-247

Package: TO-247-3

Stock41,616
IXFT150N20T
IXYS

MOSFET N-CH 200V 150A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,952
IXTQ30N50P
IXYS

MOSFET N-CH 500V 30A TO-3P

Package: TO-3P-3, SC-65-3

Stock7,760
AOL1242
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 14A 8ULTRASO

Package: 3-PowerSMD, Flat Leads

Stock2,384
CSD17581Q3A
Texas Instruments

30V N CH MOSFET

Package: 8-PowerVDFN

Stock6,224
AOD425
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 9A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,822,760
FDP023N08B_F102
Fairchild/ON Semiconductor

MOSFET N-CH 75V 120A TO-220-3

Package: TO-220-3

Stock9,444
FDMC86570L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 56A POWER33

Package: 8-PowerWDFN

Stock7,344
STU65N3LLH5
STMicroelectronics

MOSFET N CH 30V 65A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock19,098
FDA28N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 28A TO-3PN

Package: TO-3P-3, SC-65-3

Stock6,416
IRLI3705NPBF
Infineon Technologies

MOSFET N-CH 55V 52A TO220FP

Package: TO-220-3 Full Pack

Stock22,368
PSMN011-30YLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 37A LFPAK

Package: SC-100, SOT-669

Stock12,462
SUM110P08-11L-E3
Vishay Siliconix

MOSFET P-CH 80V 110A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock75,192
DMN10H220LK3-13
Diodes Incorporated

MOSFET N-CH 100V 7.5A TO252

Package: -

Stock19,341
2SJ598-0-Z-E1-AZ
Renesas Electronics Corporation

TRANSISTOR

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SPP100N03S2L03	Infineon Technologies	MOSFET N-CH 30V 100A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock3,216	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	2V @ 250µA	220nC @ 10V	8180pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IPD09N03LA G	Infineon Technologies	MOSFET N-CH 25V 50A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1642pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock28,884	MOSFET (Metal Oxide)	25V	50A (Tc)	4.5V, 10V	2V @ 20µA	13nC @ 5V	1642pF @ 15V	±20V	-	63W (Tc)	8.6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
PHP21N06T,127	NXP	MOSFET N-CH 55V 21A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 69W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,440	MOSFET (Metal Oxide)	55V	21A (Tc)	10V	4V @ 1mA	13nC @ 10V	500pF @ 25V	±20V	-	69W (Tc)	75 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHM30NQ10T,518	NXP	MOSFET N-CH 100V 37.6A 8HVSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 37.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 53.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (6x5) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock6,032	MOSFET (Metal Oxide)	100V	37.6A (Tc)	10V	4V @ 1mA	53.7nC @ 10V	3600pF @ 25V	±20V	-	62.5W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-HVSON (6x5)	8-VDFN Exposed Pad
ZVN1409ASTOA	Diodes Incorporated	MOSFET N-CH 90V 0.01A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 90V Current - Continuous Drain (Id) @ 25°C: 10mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 6.5pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 250 Ohm @ 5mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock4,352	MOSFET (Metal Oxide)	90V	10mA (Ta)	10V	2.4V @ 100µA	-	6.5pF @ 25V	±20V	-	625mW (Ta)	250 Ohm @ 5mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
RFG60P05E	Fairchild/ON Semiconductor	MOSFET P-CH 50V 60A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock41,616	MOSFET (Metal Oxide)	50V	60A (Tc)	10V	4V @ 250µA	450nC @ 20V	7200pF @ 25V	±20V	-	215W (Tc)	30 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IXFT150N20T	IXYS	MOSFET N-CH 200V 150A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 177nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,952	MOSFET (Metal Oxide)	200V	150A (Tc)	10V	5V @ 4mA	177nC @ 10V	11700pF @ 25V	±20V	-	890W (Tc)	15 mOhm @ 75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTQ30N50P	IXYS	MOSFET N-CH 500V 30A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock7,760	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	5V @ 250µA	70nC @ 10V	4150pF @ 25V	±30V	-	460W (Tc)	200 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
AOL1242	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V 14A 8ULTRASO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8? Package / Case: 3-PowerSMD, Flat Leads	Package: 3-PowerSMD, Flat Leads	Stock2,384	MOSFET (Metal Oxide)	40V	14A (Ta), 69A (Tc)	4.5V, 10V	2.3V @ 250µA	23nC @ 10V	1620pF @ 20V	±20V	-	2.1W (Ta), 68W (Tc)	5.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	UltraSO-8?	3-PowerSMD, Flat Leads
CSD17581Q3A	Texas Instruments	30V N CH MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3640pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.15) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,224	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	1.7V @ 250µA	54nC @ 10V	3640pF @ 15V	±20V	-	2.8W (Ta), 63W (Tc)	3.8 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.15)	8-PowerVDFN
AOD425	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 9A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,822,760	MOSFET (Metal Oxide)	30V	9A (Ta), 50A (Tc)	5V, 10V	3.5V @ 250µA	38nC @ 10V	2200pF @ 15V	±25V	-	2.5W (Ta), 71W (Tc)	17 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDP023N08B_F102	Fairchild/ON Semiconductor	MOSFET N-CH 75V 120A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13765pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 2.35 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock9,444	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	3.8V @ 250µA	195nC @ 10V	13765pF @ 37.5V	±20V	-	245W (Tc)	2.35 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FDMC86570L	Fairchild/ON Semiconductor	MOSFET N-CH 60V 56A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6705pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power33 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock7,344	MOSFET (Metal Oxide)	60V	18A (Ta), 56A (Tc)	4.5V, 10V	3V @ 250µA	88nC @ 10V	6705pF @ 30V	±20V	-	2.3W (Ta), 54W (Tc)	4.3 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power33	8-PowerWDFN
STU65N3LLH5	STMicroelectronics	MOSFET N CH 30V 65A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 25V Vgs (Max): ±22V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 7.3 mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock19,098	MOSFET (Metal Oxide)	30V	65A (Tc)	4.5V, 10V	3V @ 250µA	8nC @ 4.5V	1290pF @ 25V	±22V	-	50W (Tc)	7.3 mOhm @ 32.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FDA28N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 28A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 155 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock6,416	MOSFET (Metal Oxide)	500V	28A (Tc)	10V	5V @ 250µA	105nC @ 10V	5140pF @ 25V	±30V	-	310W (Tc)	155 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IRLI3705NPBF	Infineon Technologies	MOSFET N-CH 55V 52A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Full-Pak Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock22,368	MOSFET (Metal Oxide)	55V	52A (Tc)	4V, 10V	2V @ 250µA	98nC @ 5V	3600pF @ 25V	±16V	-	58W (Tc)	10 mOhm @ 28A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB Full-Pak	TO-220-3 Full Pack
PSMN011-30YLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 37A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 641pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 29W (Tc) Rds On (Max) @ Id, Vgs: 11.6 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock12,462	MOSFET (Metal Oxide)	30V	37A (Tc)	4.5V, 10V	1.95V @ 1mA	10.3nC @ 10V	641pF @ 15V	±20V	-	29W (Tc)	11.6 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
SUM110P08-11L-E3	Vishay Siliconix	MOSFET P-CH 80V 110A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10850pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock75,192	MOSFET (Metal Oxide)	80V	110A (Tc)	4.5V, 10V	3V @ 250µA	270nC @ 10V	10850pF @ 40V	±20V	-	13.6W (Ta), 375W (Tc)	11.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMN10H220LK3-13	Diodes Incorporated	MOSFET N-CH 100V 7.5A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 18.7W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock19,341	MOSFET (Metal Oxide)	100 V	7.5A (Tc)	4.5V, 10V	2.5V @ 250µA	6.7 nC @ 10 V	384 pF @ 25 V	±20V	-	18.7W (Tc)	220mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SJ598-0-Z-E1-AZ	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	12A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
BSC0804LSATMA1	Infineon Technologies	MOSFET N-CH 100V 40A TDSON-8-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 36µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	40A (Tc)	4.5V, 10V	2.3V @ 36µA	14.6 nC @ 4.5 V	2100 pF @ 50 V	±20V	-	83W (Tc)	9.6mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
TQM032NH04CR-RLG	Taiwan Semiconductor Corporation	40V, 81A, SINGLE N-CHANNEL POWER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4344 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (4.9x5.75) Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	23A (Ta), 81A (Tc)	7V, 10V	3.6V @ 250µA	67.5 nC @ 10 V	4344 pF @ 25 V	±20V	-	115W (Tc)	3.2mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	8-PDFNU (4.9x5.75)	8-PowerTDFN
IXTP4N70X2M	IXYS	MOSFET N-CH 700V 4A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock72	MOSFET (Metal Oxide)	700 V	4A (Tc)	10V	4.5V @ 250µA	11.8 nC @ 10 V	386 pF @ 25 V	±30V	-	30W (Tc)	850mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
2SK1335-90L	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FDI9409-F085	Fairchild Semiconductor	FDI9409 - N-CHANNEL POWERTRENCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tj) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK (TO-262) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	80A (Tc)	10V	4V @ 250µA	56 nC @ 10 V	2980 pF @ 25 V	±20V	-	94W (Tj)	3.8mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK (TO-262)	TO-262-3 Long Leads, I2PAK, TO-262AA
RQ5E025TNTL	Rohm Semiconductor	MOSFET N-CH 30V 2.5A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 92mOhm @ 2.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock15,165	MOSFET (Metal Oxide)	30 V	2.5A (Ta)	2.5V, 4.5V	1.5V @ 1mA	4.6 nC @ 4.5 V	220 pF @ 10 V	±12V	-	700mW (Ta)	92mOhm @ 2.5A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
IRLML2803GPBF-ML	MOSLEADER	N 30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AON7401L	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 9A/20A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Ta), 20A (Tc)	6V, 10V	3V @ 250µA	39 nC @ 10 V	2600 pF @ 15 V	±25V	-	1.6W (Ta), 27W (Tc)	14mOhm @ 9A, 20V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN