Page 1446 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR4615
Infineon Technologies

MOSFET N-CH 150V 33A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock143,484
IRF3707ZCSTRLP
Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,136
IRF7324D1TR
Infineon Technologies

MOSFET P-CH 20V 2.2A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,000
MCH3486-TL-H
ON Semiconductor

MOSFET N-CH 60V 2A MCPH3

Package: 3-SMD, Flat Leads

Stock42,720
RJK4514DPK-00#T0
Renesas Electronics America

MOSFET N-CH 450V 22A TO3P

Package: TO-3P-3, SC-65-3

Stock3,536
FQD4N50TM_WS
Fairchild/ON Semiconductor

MOSFET N-CH 500V 2.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,800
NTMS4706NR2G
ON Semiconductor

MOSFET N-CH 30V 6.4A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock705,600
HUFA75321S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 35A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,272
FDW254P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 9.2A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock491,412
IRFL210TR
Vishay Siliconix

MOSFET N-CH 200V 0.96A SOT223

Package: TO-261-4, TO-261AA

Stock307,800
IRFBC40AS
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock37,704
IPI80N04S204AKSA2
Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock7,584
IRFIBC40G
Vishay Siliconix

MOSFET N-CH 600V 3.5A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,688
IXFA12N50P
IXYS

MOSFET N-CH 500V 12A D2-PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,080
HAT2171H-EL-E
Renesas Electronics America

MOSFET N-CH 40V 40A 5LFPAK

Package: SC-100, SOT-669

Stock97,800
AOT15S60L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 15A TO220

Package: TO-220-3

Stock6,048
AOWF10T60P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-262

Package: TO-262-3 Full Pack, I2Pak

Stock3,488
SMP3003-DL-1E
ON Semiconductor

MOSFET P-CH 75V 100A SMP-FD

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock26,928
STF11N65M2
STMicroelectronics

MOSFET N-CH 650V 7A TO-220FP

Package: TO-220-3 Full Pack

Stock20,688
IPD04N03LB G
Infineon Technologies

MOSFET N-CH 30V 50A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,912

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR4615	Infineon Technologies	MOSFET N-CH 150V 33A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock143,484	MOSFET (Metal Oxide)	150V	33A (Tc)	10V	5V @ 100µA	26nC @ 10V	1750pF @ 50V	±20V	-	144W (Tc)	42 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF3707ZCSTRLP	Infineon Technologies	MOSFET N-CH 30V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,136	MOSFET (Metal Oxide)	30V	59A (Tc)	4.5V, 10V	2.25V @ 25µA	15nC @ 4.5V	1210pF @ 15V	±20V	-	57W (Tc)	9.5 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF7324D1TR	Infineon Technologies	MOSFET P-CH 20V 2.2A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,000	MOSFET (Metal Oxide)	20V	2.2A (Ta)	2.7V, 4.5V	700mV @ 250µA	7.8nC @ 4.5V	260pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	270 mOhm @ 1.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
MCH3486-TL-H	ON Semiconductor	MOSFET N-CH 60V 2A MCPH3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 137 mOhm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70FL/MCPH3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock42,720	MOSFET (Metal Oxide)	60V	2A (Ta)	4V, 10V	-	7nC @ 10V	310pF @ 20V	±20V	-	1W (Ta)	137 mOhm @ 1A, 10V	150°C (TJ)	Surface Mount	SC-70FL/MCPH3	3-SMD, Flat Leads
RJK4514DPK-00#T0	Renesas Electronics America	MOSFET N-CH 450V 22A TO3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock3,536	MOSFET (Metal Oxide)	450V	22A (Ta)	10V	-	46nC @ 10V	1800pF @ 25V	±30V	-	150W (Tc)	300 mOhm @ 11A, 10V	150°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
FQD4N50TM_WS	Fairchild/ON Semiconductor	MOSFET N-CH 500V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,800	MOSFET (Metal Oxide)	500V	2.6A (Tc)	10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	±30V	-	2.5W (Ta), 45W (Tc)	2.7 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMS4706NR2G	ON Semiconductor	MOSFET N-CH 30V 6.4A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock705,600	MOSFET (Metal Oxide)	30V	6.4A (Ta)	4.5V, 10V	2.5V @ 250µA	15nC @ 4.5V	950pF @ 24V	±20V	-	830mW (Ta)	12 mOhm @ 10.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
HUFA75321S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 35A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 93W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,272	MOSFET (Metal Oxide)	55V	35A (Tc)	10V	4V @ 250µA	44nC @ 20V	680pF @ 25V	±20V	-	93W (Tc)	34 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDW254P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 9.2A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5878pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 9.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock491,412	MOSFET (Metal Oxide)	20V	9.2A (Ta)	1.8V, 4.5V	1.5V @ 250µA	96nC @ 4.5V	5878pF @ 10V	±8V	-	1.3W (Ta)	12 mOhm @ 9.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
IRFL210TR	Vishay Siliconix	MOSFET N-CH 200V 0.96A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 580mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock307,800	MOSFET (Metal Oxide)	200V	960mA (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	1.5 Ohm @ 580mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRFBC40AS	Vishay Siliconix	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock37,704	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	42nC @ 10V	1036pF @ 25V	±30V	-	125W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPI80N04S204AKSA2	Infineon Technologies	MOSFET N-CH 40V 80A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock7,584	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 250µA	170nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	3.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFIBC40G	Vishay Siliconix	MOSFET N-CH 600V 3.5A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,688	MOSFET (Metal Oxide)	600V	3.5A (Tc)	10V	4V @ 250µA	60nC @ 10V	1300pF @ 25V	±20V	-	40W (Tc)	1.2 Ohm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IXFA12N50P	IXYS	MOSFET N-CH 500V 12A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXFA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,080	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	5.5V @ 1mA	29nC @ 10V	1830pF @ 25V	±30V	-	200W (Tc)	500 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXFA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HAT2171H-EL-E	Renesas Electronics America	MOSFET N-CH 40V 40A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock97,800	MOSFET (Metal Oxide)	40V	40A (Ta)	7V, 10V	-	52nC @ 10V	3750pF @ 10V	±20V	-	25W (Tc)	4.8 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
AOT15S60L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 15A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,048	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.8V @ 250µA	15.6nC @ 10V	372pF @ 100V	±30V	-	208W (Tc)	290 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
AOWF10T60P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 10A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 700 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I2Pak	Package: TO-262-3 Full Pack, I2Pak	Stock3,488	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	40nC @ 10V	1595pF @ 100V	±30V	-	28W (Tc)	700 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262F	TO-262-3 Full Pack, I2Pak
SMP3003-DL-1E	ON Semiconductor	MOSFET P-CH 75V 100A SMP-FD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock26,928	MOSFET (Metal Oxide)	75V	100A (Ta)	4V, 10V	-	280nC @ 10V	13400pF @ 20V	±20V	-	90W (Tc)	8 mOhm @ 50A, 10V	150°C (TJ)	Surface Mount	D2PAK (TO-263)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STF11N65M2	STMicroelectronics	MOSFET N-CH 650V 7A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock20,688	MOSFET (Metal Oxide)	650V	7A (Tc)	10V	4V @ 250µA	12.5nC @ 10V	410pF @ 100V	±25V	-	25W (Tc)	670 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
IPD04N03LB G	Infineon Technologies	MOSFET N-CH 30V 50A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 115W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,912	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2V @ 70µA	40nC @ 5V	5200pF @ 15V	±20V	-	115W (Tc)	4.1 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN10H120SE-13	Diodes Incorporated	MOSFET N-CH 100V 3.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 549pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 110 mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock5,504	MOSFET (Metal Oxide)	100V	3.6A (Ta)	6V, 10V	3V @ 250µA	10nC @ 10V	549pF @ 50V	±20V	-	1.3W (Ta)	110 mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
RSF014N03TL	Rohm Semiconductor	MOSFET N-CH 30V 1.4A TUMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 10V Vgs (Max): 20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TUMT3 Package / Case: 3-SMD, Flat Leads	Package: 3-SMD, Flat Leads	Stock156,012	MOSFET (Metal Oxide)	30V	1.4A (Ta)	4V, 10V	2.5V @ 1mA	2nC @ 5V	70pF @ 10V	20V	-	800mW (Ta)	240 mOhm @ 1.4A, 10V	150°C (TJ)	Surface Mount	TUMT3	3-SMD, Flat Leads
FDC642P_F085	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4A 6SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock6,880	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	16nC @ 4.5V	640pF @ 10V	±8V	-	1.2W (Ta)	65 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
PJQ5448-AU_R2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Stock44,988	MOSFET (Metal Oxide)	40 V	9.6A (Ta), 50A (Tc)	4.5V, 10V	2.5V @ 250µA	10 nC @ 4.5 V	1040 pF @ 20 V	±20V	-	2.4W (Ta), 65.2W (Tc)	11mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
FJ4B01100L1	Panasonic Electronic Components	MOSFET P-CH 12V 2.2A XLGA004 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 74mOhm @ 1.5A, 4.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Supplier Device Package: XLGA004-W-0808-RA01 Package / Case: 4-XFLGA, CSP	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	2.2A (Ta)	1.5V, 4.5V	1V @ 1.2mA	7 nC @ 4.5 V	459 pF @ 10 V	±8V	-	360mW (Ta)	74mOhm @ 1.5A, 4.5V	-40°C ~ 85°C (TA)	Surface Mount	XLGA004-W-0808-RA01	4-XFLGA, CSP
UPA1740TP-E1-AZ	Renesas	UPA1740TP-E1-AZ - MOS FIELD EFFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 10 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1W (Ta), 22W (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 3.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerSOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	7A (Tc)	10V	4.5V @ 1mA	12 nC @ 10 V	420 pF @ 10 V	±30V	-	1W (Ta), 22W (Tc)	440mOhm @ 3.5A, 10V	150°C	Surface Mount	8-HSOP	8-PowerSOIC (0.173", 4.40mm Width)
IXFP30N25X3M	IXYS	MOSFET N-CH 250V 30A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Isolated Tab Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock786	MOSFET (Metal Oxide)	250 V	30A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1450 pF @ 25 V	±20V	-	36W (Tc)	60mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Isolated Tab	TO-220-3 Full Pack, Isolated Tab
SIDR622DP-T1-RE3	Vishay Siliconix	N-CHANNEL 150-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 64.6A (Ta), 56.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	64.6A (Ta), 56.7A (Tc)	7.5V, 10V	4.5V @ 250µA	41 nC @ 10 V	1516 pF @ 75 V	±20V	-	6.25W (Ta), 125W (Tc)	17.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8