|
|
ON Semiconductor |
MOSFET N-CH 30V 44A SO8-FL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 920mW (Ta), 21.6W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: 8-PowerTDFN, 5 Leads |
Stock3,344 |
|
MOSFET (Metal Oxide) | 30V | 9A (Ta), 44A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 17.3nC @ 10V | 1004pF @ 15V | ±20V | - | 920mW (Ta), 21.6W (Tc) | 7 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
ON Semiconductor |
MOSFET N-CH 35V 2.5A MCPH6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 35V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 186pF @ 20V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 98 mOhm @ 1.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MCPH
- Package / Case: 6-SMD, Flat Leads
|
Package: 6-SMD, Flat Leads |
Stock6,560 |
|
MOSFET (Metal Oxide) | 35V | 2.5A (Ta) | 4V, 10V | - | 4nC @ 10V | 186pF @ 20V | ±20V | - | 800mW (Ta) | 98 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | 6-MCPH | 6-SMD, Flat Leads |
|
|
Nexperia USA Inc. |
MOSFET N-CH 55V 54A TO220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1592pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 118W (Tc)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock7,120 |
|
MOSFET (Metal Oxide) | 55V | 54A (Tc) | 10V | 4V @ 1mA | - | 1592pF @ 25V | ±20V | - | 118W (Tc) | 20 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 56A TO-247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 56A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
|
Package: TO-247-3 |
Stock2,720 |
|
MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | ±20V | - | 200W (Tc) | 25 mOhm @ 56A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
Diodes Incorporated |
MOSFET P-CH 200V 0.07A TO92-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 80 Ohm @ 50mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
|
Package: E-Line-3 |
Stock6,096 |
|
MOSFET (Metal Oxide) | 200V | 70mA (Ta) | 10V | 3.5V @ 1mA | - | 50pF @ 25V | ±20V | - | 625mW (Ta) | 80 Ohm @ 50mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
|
|
ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 59V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 35V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 1.69W (Ta)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock3,088 |
|
MOSFET (Metal Oxide) | 59V | 2.6A (Ta) | 3V, 10V | 2.5V @ 100µA | 7nC @ 4.5V | 250pF @ 35V | ±15V | - | 1.69W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
Vishay Siliconix |
MOSFET N-CH 450V 3.4A TO220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
|
Package: TO-220-3 Full Pack, Isolated Tab |
Stock3,456 |
|
MOSFET (Metal Oxide) | 450V | 3.4A (Tc) | 10V | 4V @ 250µA | 45nC @ 10V | 680pF @ 25V | ±20V | - | 35W (Tc) | 1.2 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
Vishay Siliconix |
MOSFET N-CH 20V 3A 6-TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Rds On (Max) @ Id, Vgs: 57 mOhm @ 4A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
|
Package: SOT-23-6 Thin, TSOT-23-6 |
Stock777,876 |
|
MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 1.8V @ 250µA | 5nC @ 4.5V | 295pF @ 10V | ±12V | - | 860mW (Ta) | 57 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
|
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 86.2W (Tc)
- Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock4,736 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | ±30V | - | 86.2W (Tc) | 2.5 Ohm @ 2A, 10V | 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
STMicroelectronics |
MOSFET N-CH 600V IPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 100V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Rds On (Max) @ Id, Vgs: 600 mOhm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
Package: TO-251-3 Short Leads, IPak, TO-251AA |
Stock6,512 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Tc) | 10V | 4V @ 250µA | 13.5nC @ 10V | 400pF @ 100V | ±25V | - | 85W (Tc) | 600 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
Fairchild/ON Semiconductor |
MOSFET P-CH 150V 1A 6-MLP
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-WDFN Exposed Pad
|
Package: 6-WDFN Exposed Pad |
Stock3,296 |
|
MOSFET (Metal Oxide) | 150V | 1A (Ta) | 6V, 10V | 4V @ 250µA | 4nC @ 10V | 210pF @ 75V | ±25V | - | 2.4W (Ta) | 1.2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (2x2) | 6-WDFN Exposed Pad |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 650V 7A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3 (Y-Forming)
- Package / Case: TO-220-3 Full Pack, Formed Leads
|
Package: TO-220-3 Full Pack, Formed Leads |
Stock15,912 |
|
MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 1245pF @ 25V | ±30V | - | 52W (Tc) | 1.4 Ohm @ 3.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
|
|
Infineon Technologies |
MOSFET NCH 135V 129A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 135V
- Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9700pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 441W (Tc)
- Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 77A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263AB)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,992 |
|
MOSFET (Metal Oxide) | 135V | 129A (Tc) | 10V | 4V @ 250µA | 270nC @ 10V | 9700pF @ 50V | ±20V | - | 441W (Tc) | 8.4 mOhm @ 77A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Infineon Technologies |
MOSFET N-CH 60V 130A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DirectFET? Isometric ME
- Package / Case: DirectFET? Isometric ME
|
Package: DirectFET? Isometric ME |
Stock4,464 |
|
MOSFET (Metal Oxide) | 60V | 130A (Tc) | 6V, 10V | 3.7V @ 150µA | 200nC @ 10V | 6530pF @ 25V | ±20V | - | 96W (Tc) | 2.9 mOhm @ 80A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET? Isometric ME | DirectFET? Isometric ME |
|
|
Vishay Siliconix |
MOSFET N-CH 150V 128A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3425pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Rds On (Max) @ Id, Vgs: 9 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,800 |
|
MOSFET (Metal Oxide) | 150V | 128A (Tc) | 7.5V, 10V | 5V @ 250µA | 95nC @ 10V | 3425pF @ 75V | ±20V | - | 375W (Tc) | 9 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Nexperia USA Inc. |
MOSFET N-CH 55V 75A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 7565pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 258W (Tc)
- Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock39,102 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 5V, 10V | 2V @ 1mA | 60nC @ 5V | 7565pF @ 25V | ±15V | - | 258W (Tc) | 5.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 25A TO-220F
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7280pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Rds On (Max) @ Id, Vgs: 42.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock60,396 |
|
MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 5V @ 250µA | 101nC @ 10V | 7280pF @ 25V | ±30V | - | 62.5W (Tc) | 42.5 mOhm @ 25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
STMicroelectronics |
MOSFET N-CH 600V 11A TO-220FP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 50V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Rds On (Max) @ Id, Vgs: 380 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock20,016 |
|
MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 5V @ 250µA | 24.5nC @ 10V | 845pF @ 50V | ±25V | - | 25W (Tc) | 380 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8DSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 0.6mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
|
Package: - |
Stock46,158 |
|
MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 2.1V @ 1mA | 110 nC @ 10 V | 10000 pF @ 15 V | ±20V | - | 960mW (Ta), 170W (Tc) | 0.6mOhm @ 50A, 10V | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerWDFN |
|
|
Fairchild Semiconductor |
N-CHANNEL POWER MOSFET
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 22mOhm @ 25A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 4.5V, 10V | 3V @ 250µA | 26 nC @ 10 V | 670 pF @ 15 V | ±20V | - | 50W (Tc) | 22mOhm @ 25A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
|
|
onsemi |
MOSFET
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
onsemi |
T6-40V N 0.67 MOHMS LL
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
- Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 52A (Ta), 370A (Tc) | 4.5V, 10V | 2V @ 250µA | 181 nC @ 10 V | 12168 pF @ 25 V | ±20V | - | 3.9W (Ta), 200W (Tc) | 0.67mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
Fairchild Semiconductor |
P-CHANNEL POWER MOSFET
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 25 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 32W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262 (I2PAK)
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 3.6A (Tc) | 10V | 4V @ 250µA | 10 nC @ 10 V | 335 pF @ 25 V | ±30V | - | 3.8W (Ta), 32W (Tc) | 1.2Ohm @ 1.8A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 (I2PAK) | TO-262-3 Long Leads, I2PAK, TO-262AA |
|
|
Vishay Siliconix |
N-CHANNEL 100-V (D-S) 175C MOSFE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 27W (Tc)
- Rds On (Max) @ Id, Vgs: 95mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 14.7A (Tc) | 10V | 3.5V @ 250µA | 7 nC @ 10 V | 220 pF @ 25 V | ±20V | - | 27W (Tc) | 95mOhm @ 4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
Renesas Electronics Corporation |
POWER FIELD-EFFECT TRANSISTOR
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Siliconix |
MOSFET N-CH 20V 43.7A/162A PPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 43.7A (Ta), 162A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
- Vgs (Max): +12V, -8V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 43.7A (Ta), 162A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 53 nC @ 10 V | 3415 pF @ 10 V | +12V, -8V | - | 3.7W (Ta), 52W (Tc) | 1.1mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
Taiwan Semiconductor Corporation |
75V, 190A, SINGLE N-CHANNEL POWE
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 190A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 250W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
|
Package: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 75 V | 17A (Ta), 190A (Tc) | 10V | 4V @ 250µA | 160 nC @ 10 V | 8600 pF @ 30 V | ±20V | - | 2W (Ta), 250W (Tc) | 4.2mOhm @ 90A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
Nexperia USA Inc. |
MOSFET N-CH 40V 5.4A 6TSOP
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 667mW (Ta), 7.5W (Tc)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.4A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SC-74, SOT-457
|
Package: - |
Stock62,535 |
|
MOSFET (Metal Oxide) | 40 V | 5.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 11.7 nC @ 10 V | 440 pF @ 20 V | ±20V | - | 667mW (Ta), 7.5W (Tc) | 30mOhm @ 5.4A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |