Page 1469 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF7854PBF
Infineon Technologies

MOSFET N-CH 80V 10A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,688
SPI11N60S5BKSA1
Infineon Technologies

MOSFET N-CH 600V 11A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,544
SI2303BDS-T1
Vishay Siliconix

MOSFET P-CH 30V 1.49A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,008,200
FQD5P10TF
Fairchild/ON Semiconductor

MOSFET P-CH 100V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,672
MTB75N05HDT4
ON Semiconductor

MOSFET N-CH 50V 75A D2PAK-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,208
FQD4N25TF
Fairchild/ON Semiconductor

MOSFET N-CH 250V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,056
IRLZ34STRL
Vishay Siliconix

MOSFET N-CH 60V 30A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,992
BSH111,235
Nexperia USA Inc.

MOSFET N-CH 55V 0.335A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,888
SPA21N50C3
Infineon Technologies

MOSFET N-CH 560V 21A TO220FP

Package: TO-220-3 Full Pack

Stock603,420
AOTF3N100
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 1000V 2.8A TO220F

Package: TO-220-3 Full Pack

Stock7,984
NTMFS5C460NLT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock5,920
AON3402
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 12.6A 8DFN

Package: 8-SMD, Flat Lead

Stock12,516
DMP3026SFDE-7
Diodes Incorporated

MOSFET BVDSS: 25V 30V U-DFN2020-

Package: 6-UDFN Exposed Pad

Stock4,112
PMPB48EP,115
Nexperia USA Inc.

MOSFET P-CH 30V 4.7A 6DFN

Package: 6-UDFN Exposed Pad

Stock6,656
RZR040P01TL
Rohm Semiconductor

MOSFET P-CH 12V 4A TSMT3

Package: SC-96

Stock1,869,252
RF4E110GNTR
Rohm Semiconductor

MOSFET N-CH 30V 11A 8-HUML

Package: 8-PowerUDFN

Stock5,280
BSH114,215
Nexperia USA Inc.

MOSFET N-CH 100V 500MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,040
PMV120ENEAR
Nexperia USA Inc.

MOSFET N-CH 60V TO-236AB

Package: TO-236-3, SC-59, SOT-23-3

Stock4,592
DMN62D0UW-7
Diodes Incorporated

MOSFET N-CH 60V 0.34A

Package: SC-70, SOT-323

Stock7,568
BSP126,115
Nexperia USA Inc.

MOSFET N-CH 250V 375MA SOT223

Package: TO-261-4, TO-261AA

Stock51,012

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF7854PBF	Infineon Technologies	MOSFET N-CH 80V 10A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,688	MOSFET (Metal Oxide)	80V	10A (Ta)	10V	4.9V @ 100µA	41nC @ 10V	1620pF @ 25V	±20V	-	2.5W (Ta)	13.4 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPI11N60S5BKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,544	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5.5V @ 500µA	54nC @ 10V	1460pF @ 25V	±20V	-	125W (Tc)	380 mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
SI2303BDS-T1	Vishay Siliconix	MOSFET P-CH 30V 1.49A SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock5,008,200	MOSFET (Metal Oxide)	30V	1.49A (Ta)	4.5V, 10V	3V @ 250µA	10nC @ 10V	180pF @ 15V	±20V	-	700mW (Ta)	200 mOhm @ 1.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
FQD5P10TF	Fairchild/ON Semiconductor	MOSFET P-CH 100V 3.6A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.05 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,672	MOSFET (Metal Oxide)	100V	3.6A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	250pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	1.05 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
MTB75N05HDT4	ON Semiconductor	MOSFET N-CH 50V 75A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,208	MOSFET (Metal Oxide)	50V	75A (Tc)	10V	4V @ 250µA	100nC @ 10V	3900pF @ 25V	±20V	-	2.5W (Ta), 125W (Tc)	9.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQD4N25TF	Fairchild/ON Semiconductor	MOSFET N-CH 250V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,056	MOSFET (Metal Oxide)	250V	3A (Tc)	10V	5V @ 250µA	5.6nC @ 10V	200pF @ 25V	±30V	-	2.5W (Ta), 37W (Tc)	1.75 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLZ34STRL	Vishay Siliconix	MOSFET N-CH 60V 30A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 18A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,992	MOSFET (Metal Oxide)	60V	30A (Tc)	4V, 5V	2V @ 250µA	35nC @ 5V	1600pF @ 25V	±10V	-	3.7W (Ta), 88W (Tc)	50 mOhm @ 18A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSH111,235	Nexperia USA Inc.	MOSFET N-CH 55V 0.335A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 335mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 830mW (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,888	MOSFET (Metal Oxide)	55V	335mA (Ta)	1.8V, 4.5V	1.3V @ 1mA	1nC @ 8V	40pF @ 10V	±10V	-	830mW (Tc)	4 Ohm @ 500mA, 4.5V	-65°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
SPA21N50C3	Infineon Technologies	MOSFET N-CH 560V 21A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 560V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34.5W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock603,420	MOSFET (Metal Oxide)	560V	21A (Tc)	10V	3.9V @ 1mA	95nC @ 10V	2400pF @ 25V	±20V	-	34.5W (Tc)	190 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AOTF3N100	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 1000V 2.8A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,984	MOSFET (Metal Oxide)	1000V	2.8A (Tc)	10V	4.5V @ 250µA	20nC @ 10V	830pF @ 25V	±30V	-	38W (Tc)	6 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
NTMFS5C460NLT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,920	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 20V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
AON3402	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 12.6A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (2.9x2.3) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock12,516	MOSFET (Metal Oxide)	20V	12.6A (Ta)	1.8V, 4.5V	1V @ 250µA	17.9nC @ 4.5V	1810pF @ 10V	±12V	-	3.1W (Ta)	13 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (2.9x2.3)	8-SMD, Flat Lead
DMP3026SFDE-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V U-DFN2020- FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1204pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type E) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,112	MOSFET (Metal Oxide)	30V	10.4A (Ta)	4V, 10V	3V @ 250µA	19.6nC @ 10V	1204pF @ 15V	±25V	-	2W (Ta)	19 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type E)	6-UDFN Exposed Pad
PMPB48EP,115	Nexperia USA Inc.	MOSFET P-CH 30V 4.7A 6DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 4.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock6,656	MOSFET (Metal Oxide)	30V	4.7A (Ta)	4.5V, 10V	2.5V @ 250µA	26nC @ 10V	860pF @ 15V	±20V	-	1.7W (Ta), 12.5W (Tc)	50 mOhm @ 4.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
RZR040P01TL	Rohm Semiconductor	MOSFET P-CH 12V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 6V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: SC-96	Stock1,869,252	MOSFET (Metal Oxide)	12V	4A (Ta)	1.5V, 4.5V	1V @ 1mA	30nC @ 4.5V	2350pF @ 6V	±10V	-	1W (Ta)	30 mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
RF4E110GNTR	Rohm Semiconductor	MOSFET N-CH 30V 11A 8-HUML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 504pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 11A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-HUML2020L8 (2x2) Package / Case: 8-PowerUDFN	Package: 8-PowerUDFN	Stock5,280	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.5V @ 250µA	7.4nC @ 10V	504pF @ 15V	±20V	-	2W (Ta)	11.3 mOhm @ 11A, 10V	150°C (TJ)	Surface Mount	6-HUML2020L8 (2x2)	8-PowerUDFN
BSH114,215	Nexperia USA Inc.	MOSFET N-CH 100V 500MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 138pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta), 830mW (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,040	MOSFET (Metal Oxide)	100V	500mA (Ta)	10V	4V @ 1mA	4.6nC @ 10V	138pF @ 25V	±20V	-	360mW (Ta), 830mW (Tc)	500 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
PMV120ENEAR	Nexperia USA Inc.	MOSFET N-CH 60V TO-236AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 513mW (Ta), 6.4W (Tc) Rds On (Max) @ Id, Vgs: 123 mOhm @ 2.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock4,592	MOSFET (Metal Oxide)	60V	2.1A (Ta)	4.5V, 10V	2.7V @ 250µA	7.4nC @ 10V	275pF @ 30V	±20V	-	513mW (Ta), 6.4W (Tc)	123 mOhm @ 2.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
DMN62D0UW-7	Diodes Incorporated	MOSFET N-CH 60V 0.34A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 340mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock7,568	MOSFET (Metal Oxide)	60V	340mA (Ta)	1.8V, 4.5V	1V @ 250µA	0.5nC @ 4.5V	32pF @ 30V	±20V	-	320mW (Ta)	2 Ohm @ 100mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
BSP126,115	Nexperia USA Inc.	MOSFET N-CH 250V 375MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 375mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 300mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock51,012	MOSFET (Metal Oxide)	250V	375mA (Ta)	10V	2V @ 1mA	-	120pF @ 25V	±20V	-	1.5W (Ta)	5 Ohm @ 300mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
ZVN4210A	Diodes Incorporated	MOSFET N-CH 100V 450MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock47,496	MOSFET (Metal Oxide)	100V	450mA (Ta)	5V, 10V	2.4V @ 1mA	-	100pF @ 25V	±20V	-	700mW (Ta)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
SPP80P06P H	Infineon Technologies	MOSFET P-CH 60V 80A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 340W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock402,744	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 5.5mA	173nC @ 10V	5033pF @ 25V	±20V	-	340W (Tc)	23 mOhm @ 64A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
MCAC60P06-TP	Micro Commercial Co	MOSFET P-CH 60V 60A DFN5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Stock2,481	MOSFET (Metal Oxide)	60 V	60A (Tc)	10V	3.5V @ 250µA	75 nC @ 10 V	5814 pF @ 25 V	±20V	-	130W	18mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
R6530ENZC17	Rohm Semiconductor	MOSFET N-CH 650V 30A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 960µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	Package: -	Stock900	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	4V @ 960µA	90 nC @ 10 V	2100 pF @ 25 V	±20V	-	86W (Tc)	140mOhm @ 14.5A, 10V	150°C (TJ)	Through Hole	TO-3PF	TO-3P-3 Full Pack
R6520ENJTL	Rohm Semiconductor	MOSFET N-CH 650V 20A LPTS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 205mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LPTS Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock300	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4V @ 630µA	61 nC @ 10 V	1400 pF @ 25 V	±20V	-	231W (Tc)	205mOhm @ 9.5A, 10V	150°C (TJ)	Surface Mount	LPTS	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NP179N04TUK-E1-AY	Renesas Electronics Corporation	AUTOMOTIVE MOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13350 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 90A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock2,400	MOSFET (Metal Oxide)	40 V	180A (Tc)	10V	4V @ 250µA	240 nC @ 10 V	13350 pF @ 25 V	±20V	-	1.8W (Ta), 288W (Tc)	1.25mOhm @ 90A, 10V	175°C	Surface Mount	TO-263-7	TO-263-7, D2PAK (6 Leads + Tab)
DI050N04PT-AQ	Diotec Semiconductor	MOSFET, POWERQFN 3X3, 40V, 50A, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerVDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	40 V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	59 nC @ 10 V	3255 pF @ 25 V	±20V	-	37W (Tc)	6.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerVDFN
SQA405EJ-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 10A PPAK SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Stock4,086	MOSFET (Metal Oxide)	40 V	10A (Tc)	4.5V, 10V	2.5V @ 250µA	33 nC @ 10 V	1815 pF @ 25 V	±20V	-	13.6W (Tc)	35mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6