Page 15 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BTS121AE3045ANTMA1
Infineon Technologies

MOSFET N CH 100V 22A TO-220AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,424
IPD088N04LGBTMA1
Infineon Technologies

MOSFET N-CH 40V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,544
IPB096N03LGATMA1
Infineon Technologies

MOSFET N-CH 30V 35A TO-263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,568
SFT1446-H
ON Semiconductor

MOSFET N-CH 60V 20A TP

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,880
SI7160DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 20A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,840
IRF9540STRR
Vishay Siliconix

MOSFET P-CH 100V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,160
IXFK20N120P
IXYS

MOSFET N-CH 1200V 20A TO-264

Package: TO-264-3, TO-264AA

Stock7,312
PSMN2R0-60PSRQ
Nexperia USA Inc.

MOSFET N-CH 60V TO220AB

Package: TO-220-3

Stock7,408
AOW7S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 7A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock4,064
NVMFS5832NLWFT1G
ON Semiconductor

MOSFET N-CH 40V 120A SO8FL

Package: 8-PowerTDFN

Stock18,000
SIHF5N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 5.3A TO220 FLPK

Package: TO-220-3 Full Pack

Stock3,584
NTE4151PT1G
ON Semiconductor

MOSFET P-CH 20V 0.76A SC-89

Package: SC-89, SOT-490

Stock259,836
IRLH6224TRPBF
Infineon Technologies

MOSFET N-CH 20V 28A PQFN 5X6

Package: 8-PowerTDFN

Stock11,004
IXTQ130N10T
IXYS

MOSFET N-CH 100V 130A TO-3P

Package: TO-3P-3, SC-65-3

Stock424,500
IRLR2703TRPBF
Infineon Technologies

MOSFET N-CH 30V 23A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock112,380
IRF7204TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,730,328
SPP80N06S209
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
RJK0390DPA-00-J53
Renesas Electronics Corporation

MOSFET N-CH 30V 65A 8WPAK

Package: -

Request a Quote
PMXB65ENE-147
NXP

NOW NEXPERIA PMXB65ENE - SMALL S

Package: -

Request a Quote
AON7442
Alpha & Omega Semiconductor Inc.

MOSFET N-CHANNEL 30V 50A 8DFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BTS121AE3045ANTMA1	Infineon Technologies	MOSFET N CH 100V 22A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220AB Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,424	MOSFET (Metal Oxide)	100V	22A (Tc)	4.5V	2.5V @ 1mA	-	1500pF @ 25V	±10V	-	95W (Tc)	100 mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	TO-220AB	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD088N04LGBTMA1	Infineon Technologies	MOSFET N-CH 40V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 16µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,544	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	2V @ 16µA	28nC @ 10V	2100pF @ 20V	±20V	-	47W (Tc)	8.8 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB096N03LGATMA1	Infineon Technologies	MOSFET N-CH 30V 35A TO-263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,568	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	1600pF @ 15V	±20V	-	42W (Tc)	9.6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SFT1446-H	ON Semiconductor	MOSFET N-CH 60V 20A TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 23W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TP Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,880	MOSFET (Metal Oxide)	60V	20A (Ta)	4V, 10V	2.6V @ 1mA	16nC @ 10V	750pF @ 20V	±20V	-	1W (Ta), 23W (Tc)	51 mOhm @ 10A, 10V	150°C (TJ)	Through Hole	TP	TO-251-3 Short Leads, IPak, TO-251AA
SI7160DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 20A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 5W (Ta), 27.7W (Tc) Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,840	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	66nC @ 10V	2970pF @ 15V	±16V	-	5W (Ta), 27.7W (Tc)	8.7 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRF9540STRR	Vishay Siliconix	MOSFET P-CH 100V 19A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 61nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,160	MOSFET (Metal Oxide)	100V	19A (Tc)	10V	4V @ 250µA	61nC @ 10V	1400pF @ 25V	±20V	-	3.7W (Ta), 150W (Tc)	200 mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFK20N120P	IXYS	MOSFET N-CH 1200V 20A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,312	MOSFET (Metal Oxide)	1200V	20A (Tc)	10V	6.5V @ 1mA	193nC @ 10V	11100pF @ 25V	±30V	-	780W (Tc)	570 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
PSMN2R0-60PSRQ	Nexperia USA Inc.	MOSFET N-CH 60V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 192nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 338W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,408	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 1mA	192nC @ 10V	13500pF @ 30V	±20V	-	338W (Tc)	2.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOW7S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 7A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock4,064	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	3.9V @ 250µA	8.2nC @ 10V	372pF @ 100V	±30V	-	104W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NVMFS5832NLWFT1G	ON Semiconductor	MOSFET N-CH 40V 120A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock18,000	MOSFET (Metal Oxide)	40V	21A (Ta)	4.5V, 10V	2.4V @ 250µA	51nC @ 10V	2700pF @ 25V	±20V	-	3.7W (Ta), 127W (Tc)	4.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SIHF5N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 5.3A TO220 FLPK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,584	MOSFET (Metal Oxide)	500V	5.3A (Tc)	10V	5V @ 250µA	20nC @ 10V	325pF @ 100V	±30V	-	30W (Tc)	1.5 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
NTE4151PT1G	ON Semiconductor	MOSFET P-CH 20V 0.76A SC-89 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 760mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 313mW (Tj) Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-3 Package / Case: SC-89, SOT-490	Package: SC-89, SOT-490	Stock259,836	MOSFET (Metal Oxide)	20V	760mA (Tj)	1.8V, 4.5V	1.2V @ 250µA	2.1nC @ 4.5V	156pF @ 5V	±6V	-	313mW (Tj)	360 mOhm @ 350mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-3	SC-89, SOT-490
IRLH6224TRPBF	Infineon Technologies	MOSFET N-CH 20V 28A PQFN 5X6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3710pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock11,004	MOSFET (Metal Oxide)	20V	28A (Ta), 105A (Tc)	2.5V, 4.5V	1.1V @ 50µA	86nC @ 10V	3710pF @ 10V	±12V	-	3.6W (Ta), 52W (Tc)	3 mOhm @ 20A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
IXTQ130N10T	IXYS	MOSFET N-CH 100V 130A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock424,500	MOSFET (Metal Oxide)	100V	130A (Tc)	10V	4.5V @ 250µA	104nC @ 10V	5080pF @ 25V	±20V	-	360W (Tc)	9.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3P	TO-3P-3, SC-65-3
IRLR2703TRPBF	Infineon Technologies	MOSFET N-CH 30V 23A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 45 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock112,380	MOSFET (Metal Oxide)	30V	23A (Tc)	4V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	45 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7204TRPBF	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,730,328	MOSFET (Metal Oxide)	20V	5.3A (Ta)	4.5V, 10V	2.5V @ 250µA	25nC @ 10V	860pF @ 10V	±12V	-	2.5W (Tc)	60 mOhm @ 5.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SPP80N06S209	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	55 V	80A (Tc)	10V	4V @ 125µA	80 nC @ 10 V	3140 pF @ 25 V	±20V	-	190W (Tc)	9.1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
RJK0390DPA-00-J53	Renesas Electronics Corporation	MOSFET N-CH 30V 65A 8WPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 65A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-WPAK Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	65A (Ta)	-	-	54 nC @ 4.5 V	8900 pF @ 10 V	-	-	60W (Tc)	2.2mOhm @ 32.5A, 10V	-	Surface Mount	8-WPAK	8-PowerWDFN
PMXB65ENE-147	NXP	NOW NEXPERIA PMXB65ENE - SMALL S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 400mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1010D-3 Package / Case: 3-XDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.2A (Ta)	4.5V, 10V	2.5V @ 250µA	11 nC @ 10 V	295 pF @ 15 V	±20V	-	400mW (Ta), 8.33W (Tc)	67mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1010D-3	3-XDFN Exposed Pad
AON7442	Alpha & Omega Semiconductor Inc.	MOSFET N-CHANNEL 30V 50A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2994 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	65 nC @ 10 V	2994 pF @ 15 V	±20V	-	83W (Tc)	1.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3.3x3.3)	8-PowerWDFN
NTMJS1D3N04CTWG	onsemi	MOSFET N-CH 40V 41A/235A 8LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 128W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-LFPAK Package / Case: SOT-1205, 8-LFPAK56	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	41A (Ta), 235A (Tc)	10V	3.5V @ 170µA	65 nC @ 10 V	4300 pF @ 25 V	±20V	-	3.8W (Ta), 128W (Tc)	1.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-LFPAK	SOT-1205, 8-LFPAK56
DMN3016LFDFQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V U-DFN2020- FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 730mW (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Ta)	4.5V, 10V	2V @ 250µA	25.1 nC @ 10 V	1415 pF @ 15 V	±20V	-	730mW (Ta)	12mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
CDM4-650-TR13-PBFREE	Central Semiconductor Corp	MOSFET N-CH 650V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 463 pF @ 25 V Vgs (Max): 30V FET Feature: - Power Dissipation (Max): 620mW (Ta), 77W (Tc) Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,433	MOSFET (Metal Oxide)	650 V	4A (Ta)	10V	4V @ 250µA	11.4 nC @ 10 V	463 pF @ 25 V	30V	-	620mW (Ta), 77W (Tc)	2.7Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
RF4P060BGTCR	Rohm Semiconductor	NCH 100V 6A, HUML2020L8, POWER M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-8S Package / Case: 8-PowerUDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	100 V	6A (Ta)	4.5V, 10V	2.5V @ 1mA	6.7 nC @ 10 V	305 pF @ 50 V	±20V	-	2W (Ta)	53mOhm @ 6A, 10V	150°C (TJ)	Surface Mount	DFN2020-8S	8-PowerUDFN
DMP4026SFGQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	28A (Tc)	4.5V, 10V	1.8V @ 250µA	48 nC @ 10 V	2275 pF @ 20 V	±20V	-	2.6W (Ta), 33W (Tc)	25mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
IRF843	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	450 V	7A (Tc)	10V	4V @ 250µA	63 nC @ 10 V	1225 pF @ 25 V	±20V	-	125W (Tc)	1.1Ohm @ 4.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
PJD2NA60_R2_00001	Panjit International Inc.	600V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 257 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	2A (Ta)	10V	4V @ 250µA	5.7 nC @ 10 V	257 pF @ 25 V	±30V	-	-	4.4Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
NVMFS5C670NLWFAFT3G	onsemi	MOSFET N-CH 60V 17A/71A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 53µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	17A (Ta), 71A (Tc)	4.5V, 10V	2V @ 53µA	20 nC @ 10 V	1400 pF @ 25 V	±20V	-	61W (Tc)	6.1mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads