Page 16 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

JANTX2N6766T1
Microsemi Corporation

MOSFET N-CH TO-254AA

Package: TO-254-3, TO-254AA (Straight Leads)

Stock6,272
PH2030AL,115
NXP

MOSFET N-CH 30V LFPAK

Package: SC-100, SOT-669

Stock4,896
IRF640,127
NXP

MOSFET N-CH 200V 16A TO220AB

Package: TO-220-3

Stock7,536
PSMN3R2-25YLC,115
NXP

MOSFET N-CH 25V 100A LFPAK

Package: SC-100, SOT-669

Stock4,720
VN0106N3-G-P003
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,568
STULED623
STMicroelectronics

MOSFET N-CH 620V 3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,160
STB150NF55T4
STMicroelectronics

MOSFET N-CH 55V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock223,812
GP2M004A060PG
Global Power Technologies Group

MOSFET N-CH 600V 4A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock32,268
IRFP150NPBF
Infineon Technologies

MOSFET N-CH 100V 42A TO-247AC

Package: TO-247-3

Stock33,708
RQ3E120GNTB
Rohm Semiconductor

MOSFET N-CH 30V 12A 8-HSMT

Package: 8-PowerVDFN

Stock27,756
TPH3206PD
Transphorm

GAN FET 600V 17A TO220

Package: TO-220-3

Stock6,912
IXFH26N50P
IXYS

MOSFET N-CH 500V 26A TO-247

Package: TO-247-3

Stock12,984
FDD3682
Fairchild/ON Semiconductor

MOSFET N-CH 100V 32A D-PAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock329,880
DMN1019USN-7
Diodes Incorporated

MOSFET N-CH 12V 9.3A SC59

Package: TO-236-3, SC-59, SOT-23-3

Stock21,840
NTE2386
NTE Electronics, Inc

MOSFET N-CHANNEL 600V 6.2A TO3

Package: -

Request a Quote
IXFT28N50F
IXYS

MOSFET N-CH 28A TO268

Package: -

Request a Quote
MSJPF20N65A-BP
Micro Commercial Co

N-CHANNEL MOSFET,TO-220F

Package: -

Stock14,727
SQJ443EP-T2_GE3
Vishay Siliconix

P-CHANNEL 40-V (D-S) 175C MOSFET

Package: -

Stock34,728
PSMN3R5-80YSFX
Nexperia USA Inc.

NEXTPOWER 80 V, 3.5 MOHM, 150 A,

Package: -

Stock28,698
DMN1019USNQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V SC59 T&R 3K

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
JANTX2N6766T1	Microsemi Corporation	MOSFET N-CH TO-254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA (Straight Leads)	Package: TO-254-3, TO-254AA (Straight Leads)	Stock6,272	MOSFET (Metal Oxide)	200V	30A (Tc)	10V	4V @ 250µA	115nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	90 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-254AA	TO-254-3, TO-254AA (Straight Leads)
PH2030AL,115	NXP	MOSFET N-CH 30V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,896	MOSFET (Metal Oxide)	30V	-	-	-	-	-	-	-	-	-	-	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRF640,127	NXP	MOSFET N-CH 200V 16A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,536	MOSFET (Metal Oxide)	200V	16A (Tc)	10V	4V @ 1mA	63nC @ 10V	1850pF @ 25V	±20V	-	136W (Tc)	180 mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN3R2-25YLC,115	NXP	MOSFET N-CH 25V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1781pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,720	MOSFET (Metal Oxide)	25V	100A (Tc)	4.5V, 10V	1.95V @ 1mA	30nC @ 10V	1781pF @ 12V	±20V	-	79W (Tc)	3.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
VN0106N3-G-P003	Microchip Technology	MOSFET N-CH 60V 350MA TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,568	MOSFET (Metal Oxide)	60V	350mA (Tj)	5V, 10V	2.4V @ 1mA	-	65pF @ 25V	±20V	-	1W (Tc)	3 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
STULED623	STMicroelectronics	MOSFET N-CH 620V 3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,160	MOSFET (Metal Oxide)	620V	3A (Tc)	10V	4.5V @ 50µA	15.5nC @ 10V	350pF @ 50V	±30V	-	45W (Tc)	3.6 Ohm @ 1.1A, 10V	150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STB150NF55T4	STMicroelectronics	MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock223,812	MOSFET (Metal Oxide)	55V	120A (Tc)	10V	4V @ 250µA	190nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
GP2M004A060PG	Global Power Technologies Group	MOSFET N-CH 600V 4A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 86.2W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock32,268	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	12nC @ 10V	545pF @ 25V	±30V	-	86.2W (Tc)	2.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRFP150NPBF	Infineon Technologies	MOSFET N-CH 100V 42A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock33,708	MOSFET (Metal Oxide)	100V	42A (Tc)	10V	4V @ 250µA	110nC @ 10V	1900pF @ 25V	±20V	-	160W (Tc)	36 mOhm @ 23A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
RQ3E120GNTB	Rohm Semiconductor	MOSFET N-CH 30V 12A 8-HSMT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 16W (Tc) Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock27,756	MOSFET (Metal Oxide)	30V	12A (Ta)	4.5V, 10V	2.5V @ 1mA	10nC @ 10V	590pF @ 15V	±20V	-	2W (Ta), 16W (Tc)	8.8 mOhm @ 12A, 10V	150°C (TJ)	Surface Mount	8-HSMT (3.2x3)	8-PowerVDFN
TPH3206PD	Transphorm	GAN FET 600V 17A TO220 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 480V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 11A, 8V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,912	GaNFET (Gallium Nitride)	600V	17A (Tc)	8V	2.6V @ 500µA	9.3nC @ 4.5V	760pF @ 480V	±18V	-	96W (Tc)	180 mOhm @ 11A, 8V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
IXFH26N50P	IXYS	MOSFET N-CH 500V 26A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock12,984	MOSFET (Metal Oxide)	500V	26A (Tc)	10V	5.5V @ 4mA	60nC @ 10V	3600pF @ 25V	±30V	-	400W (Tc)	230 mOhm @ 13A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
FDD3682	Fairchild/ON Semiconductor	MOSFET N-CH 100V 32A D-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock329,880	MOSFET (Metal Oxide)	100V	5.5A (Ta), 32A (Tc)	6V, 10V	4V @ 250µA	28nC @ 10V	1250pF @ 25V	±20V	-	95W (Tc)	36 mOhm @ 32A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
DMN1019USN-7	Diodes Incorporated	MOSFET N-CH 12V 9.3A SC59 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 2426pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 680mW (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 9.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock21,840	MOSFET (Metal Oxide)	12V	9.3A (Ta)	1.2V, 2.5V	800mV @ 250µA	50.6nC @ 8V	2426pF @ 10V	±8V	-	680mW (Ta)	10 mOhm @ 9.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-59	TO-236-3, SC-59, SOT-23-3
NTE2386	NTE Electronics, Inc	MOSFET N-CHANNEL 600V 6.2A TO3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AA, TO-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	6.2A (Tc)	10V	4V @ 250µA	80 nC @ 10 V	1300 pF @ 25 V	±20V	-	125W (Tc)	1.2Ohm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AA, TO-3
IXFT28N50F	IXYS	MOSFET N-CH 28A TO268 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSJPF20N65A-BP	Micro Commercial Co	N-CHANNEL MOSFET,TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1807 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 34W Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock14,727	MOSFET (Metal Oxide)	650 V	20A	10V	4V @ 250µA	56 nC @ 10 V	1807 pF @ 25 V	±30V	-	34W	180mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SQJ443EP-T2_GE3	Vishay Siliconix	P-CHANNEL 40-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock34,728	MOSFET (Metal Oxide)	40 V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	57 nC @ 10 V	2030 pF @ 20 V	±20V	-	83W (Tc)	29mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
PSMN3R5-80YSFX	Nexperia USA Inc.	NEXTPOWER 80 V, 3.5 MOHM, 150 A, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7227 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock28,698	MOSFET (Metal Oxide)	80 V	150A (Ta)	7V, 10V	4V @ 1mA	108 nC @ 10 V	7227 pF @ 40 V	±20V	-	294W (Ta)	3.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
DMN1019USNQ-7	Diodes Incorporated	MOSFET BVDSS: 8V~24V SC59 T&R 3K FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 680mW (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-59-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	12 V	9.3A (Ta)	1.2V, 4.5V	800mV @ 250µA	50.6 nC @ 8 V	2426 pF @ 10 V	±8V	-	680mW (Ta)	10mOhm @ 9.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-59-3	TO-236-3, SC-59, SOT-23-3
SIRS5700DP-T1-RE3	Vishay Siliconix	N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 144A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5455 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 278W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	25A (Ta), 144A (Tc)	7.5V, 10V	4V @ 250µA	110 nC @ 10 V	5455 pF @ 75 V	±20V	-	8.3W (Ta), 278W (Tc)	5.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRF9622156	Harris Corporation	3A, 200V, 2.4OHM, P-CHANNEL, POW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIA430DJT-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 12A PPAK SC70-6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 19.2W (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Single Package / Case: PowerPAK® SC-70-6	Package: -	Stock9,000	MOSFET (Metal Oxide)	20 V	12A (Tc)	4.5V, 10V	3V @ 250µA	18 nC @ 10 V	800 pF @ 10 V	±20V	-	19.2W (Tc)	13.5mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6 Single	PowerPAK® SC-70-6
GT060N04T	Goford Semiconductor	MOSFET N-CH 40 60A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	60A (Tc)	4.5V, 10V	2.3V @ 250µA	-	-	±20V	-	48W (Tc)	6mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
NVMFS5C677NLWFT1G	onsemi	MOSFET N-CH 60V 11A/36A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,500	MOSFET (Metal Oxide)	60 V	11A (Ta), 36A (Tc)	4.5V, 10V	2V @ 25µA	9.7 nC @ 10 V	620 pF @ 25 V	±20V	-	3.5W (Ta), 37W (Tc)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
RJK1003DPP-A0-T2	Renesas Electronics Corporation	MOSFET N-CH 100V 50A TO220FPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220ABA Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	50A (Ta)	10V	4V @ 1mA	59 nC @ 10 V	4150 pF @ 10 V	±20V	-	25W (Ta)	11mOhm @ 25A, 10V	150°C	Through Hole	TO-220ABA	TO-220-3
PMN42XPEAH	Nexperia USA Inc.	MOSFET P-CH 20V 5.7A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: -	Stock48,039	MOSFET (Metal Oxide)	20 V	5.7A (Ta)	2.5V, 4.5V	1.25V @ 250µA	17.3 nC @ 4.5 V	1410 pF @ 10 V	±12V	-	500mW (Ta), 8.33W (Tc)	46mOhm @ 3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
DMTH48M3SFVWQ-13	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	14.6A (Ta), 52.4A (Tc)	10V	4V @ 250µA	12.1 nC @ 10 V	897 pF @ 20 V	±20V	-	2.82W (Ta), 36.6W (Tc)	8.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN