Page 18 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N03S4L04AKSA1
Infineon Technologies

MOSFET N-CH 30V 80A TO220-3

Package: TO-220-3

Stock4,000
IRF7831TR
Infineon Technologies

MOSFET N-CH 30V 21A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,312
AON7764
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 32A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock4,480
SI1305DL-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 0.86A SOT323-3

Package: SC-70, SOT-323

Stock3,103,812
STY100NS20FD
STMicroelectronics

MOSFET N-CH 200V 100A MAX247

Package: TO-247-3

Stock7,792
HUF75345S3
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,176
STD55NH2LLT4
STMicroelectronics

MOSFET N-CH 24V 40A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock390,000
IXTY1N80
IXYS

MOSFET N-CH 800V 750MA TO-252AA

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,616
IXTY32P05T
IXYS

MOSFET P-CH 50V 32A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,032
AOD4C60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,376
NVMFS5C468NLT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock3,632
DKI03082
Sanken

MOSFET N-CH 30V 29A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
AON7568
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 25A

Package: 8-PowerSMD, Flat Leads

Stock3,696
PHB32N06LT,118
Nexperia USA Inc.

MOSFET N-CH 60V 34A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,466
FDMS9409-F085
onsemi

MOSFET N-CH 40V 65A POWER56

Package: -

Request a Quote
PJA3471_R1_00001
Panjit International Inc.

SOT-23, MOSFET

Package: -

Stock30,510
SIRA90ADP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 71A/334A PPAK

Package: -

Request a Quote
XP10TN028YT
YAGEO XSEMI

MOSFET N-CH 100V 7.5A PMPAK

Package: -

Stock3,000
R6013VND3TL1
Rohm Semiconductor

600V 13A TO-252, PRESTOMOS WITH

Package: -

Stock7,677
UPA2726UT1A-E1-AY
Renesas Electronics Corporation

MOSFET N-CH 30V 20A 8DFN

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N03S4L04AKSA1	Infineon Technologies	MOSFET N-CH 30V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock4,000	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.2V @ 45µA	75nC @ 10V	5100pF @ 25V	±16V	-	94W (Tc)	3.7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRF7831TR	Infineon Technologies	MOSFET N-CH 30V 21A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 6240pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,312	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	2.35V @ 250µA	60nC @ 4.5V	6240pF @ 15V	±12V	-	2.5W (Ta)	3.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AON7764	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 32A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock4,480	MOSFET (Metal Oxide)	30V	30A (Ta), 32A (Tc)	4.5V, 10V	2.2V @ 250µA	40nC @ 10V	1990pF @ 15V	±20V	-	4.2W (Ta), 30W (Tc)	3.2 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerSMD, Flat Leads
SI1305DL-T1-E3	Vishay Siliconix	MOSFET P-CH 8V 0.86A SOT323-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 290mW (Ta) Rds On (Max) @ Id, Vgs: 280 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock3,103,812	MOSFET (Metal Oxide)	8V	860mA (Ta)	1.8V, 4.5V	450mV @ 250µA (Min)	4nC @ 4.5V	-	±8V	-	290mW (Ta)	280 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
STY100NS20FD	STMicroelectronics	MOSFET N-CH 200V 100A MAX247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 50A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: MAX247? Package / Case: TO-247-3	Package: TO-247-3	Stock7,792	MOSFET (Metal Oxide)	200V	100A (Tc)	10V	4V @ 250µA	360nC @ 10V	7900pF @ 25V	±20V	-	450W (Tc)	24 mOhm @ 50A, 10V	150°C (TJ)	Through Hole	MAX247?	TO-247-3
HUF75345S3	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 275nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,176	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	275nC @ 20V	4000pF @ 25V	±20V	-	325W (Tc)	7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STD55NH2LLT4	STMicroelectronics	MOSFET N-CH 24V 40A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock390,000	MOSFET (Metal Oxide)	24V	40A (Tc)	4.5V, 10V	1V @ 250µA	11nC @ 4.5V	990pF @ 25V	±16V	-	60W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1N80	IXYS	MOSFET N-CH 800V 750MA TO-252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 750mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 11 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,616	MOSFET (Metal Oxide)	800V	750mA (Tc)	10V	4.5V @ 25µA	8.5nC @ 10V	220pF @ 25V	±20V	-	40W (Tc)	11 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY32P05T	IXYS	MOSFET P-CH 50V 32A TO-252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,032	MOSFET (Metal Oxide)	50V	32A (Tc)	10V	4.5V @ 250µA	46nC @ 10V	1975pF @ 25V	±15V	-	83W (Tc)	39 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
AOD4C60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 4A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.3A, 10V Operating Temperature: -50°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,376	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	5V @ 250µA	18nC @ 10V	910pF @ 100V	±30V	-	125W (Tc)	950 mOhm @ 1.3A, 10V	-50°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C468NLT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,632	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	7.3nC @ 10V	570pF @ 25V	±20V	-	3.5W (Ta), 28W (Tc)	10.3 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DKI03082	Sanken	MOSFET N-CH 30V 29A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	30V	29A (Tc)	4.5V, 10V	2.5V @ 250µA	16.3nC @ 10V	1030pF @ 15V	±20V	-	32W (Tc)	8.4 mOhm @ 25A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPak (2 Leads + Tab), SC-63
AON7568	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 25A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 28W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock3,696	MOSFET (Metal Oxide)	30V	25A (Ta), 32A (Tc)	4.5V, 10V	2.4V @ 250µA	60nC @ 10V	2270pF @ 15V	±20V	-	5W (Ta), 28W (Tc)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
PHB32N06LT,118	Nexperia USA Inc.	MOSFET N-CH 60V 34A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1280pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 97W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,466	MOSFET (Metal Oxide)	60V	34A (Tc)	4.5V, 5V	2V @ 1mA	17nC @ 5V	1280pF @ 25V	±15V	-	97W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS9409-F085	onsemi	MOSFET N-CH 40V 65A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 65A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	65A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	3130 pF @ 20 V	±20V	-	100W (Tj)	3.2mOhm @ 65A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerVDFN
PJA3471_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 650mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock30,510	MOSFET (Metal Oxide)	100 V	900mA (Ta)	4.5V, 10V	2.5V @ 250µA	8 nC @ 10 V	448 pF @ 15 V	±20V	-	1.25W (Ta)	650mOhm @ 900mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIRA90ADP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 71A/334A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 71A (Ta), 334A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9120 pF @ 15 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.78mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	71A (Ta), 334A (Tc)	-	2.2V @ 250µA	195 nC @ 10 V	9120 pF @ 15 V	+20V, -16V	-	6.3W (Ta), 104W (Tc)	0.78mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
XP10TN028YT	YAGEO XSEMI	MOSFET N-CH 100V 7.5A PMPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.125W (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PMPAK® 3 x 3 Package / Case: 8-PowerDFN	Package: -	Stock3,000	MOSFET (Metal Oxide)	100 V	7.5A (Ta)	5V, 10V	3V @ 250µA	23 nC @ 4.5 V	2160 pF @ 50 V	±20V	-	3.125W (Ta)	28mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PMPAK® 3 x 3	8-PowerDFN
R6013VND3TL1	Rohm Semiconductor	600V 13A TO-252, PRESTOMOS WITH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 6.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 131W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 15V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,677	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V, 15V	6.5V @ 500µA	21 nC @ 10 V	900 pF @ 100 V	±30V	-	131W (Tc)	300mOhm @ 3A, 15V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
UPA2726UT1A-E1-AY	Renesas Electronics Corporation	MOSFET N-CH 30V 20A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN3333 (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta)	-	2.5V @ 1mA	15 nC @ 5 V	1720 pF @ 15 V	-	-	-	7mOhm @ 10A, 10V	-	Surface Mount	8-DFN3333 (3.3x3.3)	8-VDFN Exposed Pad
NTCR015N065SC1	onsemi	IC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
UPA2463T1Q-E1-AX	Renesas Electronics Corporation	MOSFET N-CH 20V 6A 8HUSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HUSON (2.7x2) Package / Case: 8-WFDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	6A (Ta)	-	-	7 nC @ 4 V	680 pF @ 10 V	-	-	1W (Ta)	20mOhm @ 3A, 10V	150°C (TJ)	Surface Mount	8-HUSON (2.7x2)	8-WFDFN Exposed Pad
2SK3455B-S17-AY	Renesas	2SK3455B - SWITCHING N-CHANNEL P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: ITO-220 (MP-45F) Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	12A (Tc)	10V	3.5V @ 1mA	30 nC @ 10 V	1800 pF @ 10 V	±30V	-	2W (Ta), 50W (Tc)	600mOhm @ 6A, 10V	150°C	Through Hole	ITO-220 (MP-45F)	TO-220-3 Full Pack
DMTH45M5LFVW-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 51W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	18A (Ta), 71A (Tc)	4.5V, 10V	2.3V @ 250µA	13.9 nC @ 10 V	978 pF @ 20 V	±20V	-	3.5W (Ta), 51W (Tc)	5.5mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
SPP04N80C3XKSA1	Infineon Technologies	MOSFET N-CH 800V 4A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 240µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Package: -	Stock1,764	MOSFET (Metal Oxide)	800 V	4A (Tc)	10V	3.9V @ 240µA	31 nC @ 10 V	570 pF @ 100 V	±20V	-	63W (Tc)	1.3Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
NTMFS015N10MCLT1G	onsemi	MOSFET N-CH 100V 10.5A/54A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 282µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13380 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock8,169	MOSFET (Metal Oxide)	100 V	10.5A (Ta), 54A (Tc)	4.5V, 10V	2.2V @ 282µA	19 nC @ 10 V	13380 pF @ 50 V	±20V	-	3W (Ta), 79W (Tc)	12.2mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
DMT8030LFDF-7	Diodes Incorporated	MOSFET BVDSS: 61V~100V U-DFN2020 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	7.5A (Ta)	4.5V, 10V	2.5V @ 250µA	10.4 nC @ 10 V	641 pF @ 25 V	±20V	-	1.2W (Ta)	25mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN2020-6 (Type F)	6-UDFN Exposed Pad
2SK2499-S-AZ	Renesas Electronics Corporation	DISCRETE / POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-