Page 17 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPD80R1K0CEBTMA1
Infineon Technologies

MOSFET N-CH 800V 5.7A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,328
IRLR3303PBF
Infineon Technologies

MOSFET N-CH 30V 35A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,032
IRF7703TR
Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

Package: 8-TSSOP (0.173", 4.40mm Width)

Stock6,016
HUFA75339S3S
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,408
BUK9E04-30B,127
NXP

MOSFET N-CH 30V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,368
STB200NF04-1
STMicroelectronics

MOSFET N-CH 40V 120A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock96,240
IPC50R045CPX1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock3,168
IPD80P03P4L07ATMA1
Infineon Technologies

MOSFET P-CH 30V 80A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,696
RJK6032DPH-E0#T2
Renesas Electronics America

MOSFET N-CH 600V 3A TO251

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,216
IPW90R340C3
Infineon Technologies

MOSFET N-CH 900V 15A TO-247

Package: TO-247-3

Stock7,952
STP42N60M2-EP
STMicroelectronics

MOSFET N-CH 600V 34A EP TO220AB

Package: TO-220-3

Stock14,874
SI3430DV-T1-E3
Vishay Siliconix

MOSFET N-CH 100V 1.8A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock136,908
DMP3099L-7
Diodes Incorporated

MOSFET P-CH 30V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock277,938
SIDR626LEP-T1-RE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) 175C MOSFET

Package: -

Stock4,500
GSFR0308
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 7A, 30V, S

Package: -

Stock17,940
RJK0380DPA-02-J0
Renesas Electronics Corporation

POWER TRANSISTOR, MOSFET

Package: -

Request a Quote
NTMFS4C027NAT1G
onsemi

NTMFS4C02 - Trench 6 30V NCH

Package: -

Request a Quote
MMFT2N02ELT1
onsemi

MOSFET N-CH 20V 1.6A SOT223

Package: -

Request a Quote
RQ5E040TNTL
Rohm Semiconductor

MOSFET N-CH 30V 4A TSMT3

Package: -

Stock17,025
AM2306N-T1-PF-ML
MOSLEADER

Single N 30V 3.5A SOT-23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPD80R1K0CEBTMA1	Infineon Technologies	MOSFET N-CH 800V 5.7A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 785pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,328	MOSFET (Metal Oxide)	800V	5.7A (Tc)	10V	3.9V @ 250µA	31nC @ 10V	785pF @ 100V	±20V	-	83W (Tc)	950 mOhm @ 3.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IRLR3303PBF	Infineon Technologies	MOSFET N-CH 30V 35A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,032	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	1V @ 250µA	26nC @ 4.5V	870pF @ 25V	±16V	-	68W (Tc)	31 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7703TR	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Package: 8-TSSOP (0.173", 4.40mm Width)	Stock6,016	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	3V @ 250µA	62nC @ 4.5V	5220pF @ 25V	±20V	-	1.5W (Ta)	28 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP	8-TSSOP (0.173", 4.40mm Width)
HUFA75339S3S	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,408	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	130nC @ 20V	2000pF @ 25V	±20V	-	200W (Tc)	12 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9E04-30B,127	NXP	MOSFET N-CH 30V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 6526pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,368	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2V @ 1mA	56nC @ 5V	6526pF @ 25V	±15V	-	254W (Tc)	3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
STB200NF04-1	STMicroelectronics	MOSFET N-CH 40V 120A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock96,240	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 250µA	210nC @ 10V	5100pF @ 25V	±20V	-	310W (Tc)	3.7 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IPC50R045CPX1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD80P03P4L07ATMA1	Infineon Technologies	MOSFET P-CH 30V 80A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 130µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,696	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2V @ 130µA	80nC @ 10V	5700pF @ 25V	+5V, -16V	-	88W (Tc)	6.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
RJK6032DPH-E0#T2	Renesas Electronics America	MOSFET N-CH 600V 3A TO251 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40.3W (Tc) Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,216	MOSFET (Metal Oxide)	600V	3A (Ta)	10V	-	9nC @ 10V	285pF @ 25V	±30V	-	40.3W (Tc)	4.3 Ohm @ 1.5A, 10V	150°C (TJ)	Through Hole	TO-251	TO-251-3 Short Leads, IPak, TO-251AA
IPW90R340C3	Infineon Technologies	MOSFET N-CH 900V 15A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock7,952	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	3.5V @ 1mA	94nC @ 10V	2400pF @ 100V	±20V	-	208W (Tc)	340 mOhm @ 9.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
STP42N60M2-EP	STMicroelectronics	MOSFET N-CH 600V 34A EP TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock14,874	MOSFET (Metal Oxide)	600V	34A (Tc)	10V	4V @ 250µA	55nC @ 10V	2370pF @ 100V	±25V	-	250W (Tc)	87 mOhm @ 17A, 10V	150°C (TJ)	Through Hole	TO-220	TO-220-3
SI3430DV-T1-E3	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.14W (Ta) Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock136,908	MOSFET (Metal Oxide)	100V	1.8A (Ta)	6V, 10V	2V @ 250µA (Min)	6.6nC @ 10V	-	±20V	-	1.14W (Ta)	170 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
DMP3099L-7	Diodes Incorporated	MOSFET P-CH 30V SOT23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.08W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock277,938	MOSFET (Metal Oxide)	30V	3.8A (Ta)	4.5V, 10V	2.1V @ 250µA	5.2nC @ 4.5V	563pF @ 25V	±20V	-	1.08W (Ta)	65 mOhm @ 3.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIDR626LEP-T1-RE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 48.7A (Ta), 218A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8DC Package / Case: PowerPAK® SO-8	Package: -	Stock4,500	MOSFET (Metal Oxide)	60 V	48.7A (Ta), 218A (Tc)	4.5V, 10V	2.5V @ 250µA	135 nC @ 10 V	5900 pF @ 30 V	±20V	-	7.5W (Ta), 150W (Tc)	1.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8DC	PowerPAK® SO-8
GSFR0308	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 7A, 30V, S FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 4A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Stock17,940	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	2V @ 250µA	6.4 nC @ 10 V	460 pF @ 15 V	±20V	-	2W (Ta)	26mOhm @ 4A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
RJK0380DPA-02-J0	Renesas Electronics Corporation	POWER TRANSISTOR, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMFS4C027NAT1G	onsemi	NTMFS4C02 - Trench 6 30V NCH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	9A (Ta), 52A (Tc)	4.5V, 10V	2.1V @ 250µA	18.2 nC @ 10 V	1670 pF @ 15 V	±20V	-	760mW (Ta), 25.5W (Tc)	4.8mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
MMFT2N02ELT1	onsemi	MOSFET N-CH 20V 1.6A SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 800mA, 5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-223 (TO-261) Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	1.6A (Ta)	-	2V @ 1mA	20 nC @ 5 V	580 pF @ 15 V	-	-	-	150mOhm @ 800mA, 5V	-	Surface Mount	SOT-223 (TO-261)	TO-261-4, TO-261AA
RQ5E040TNTL	Rohm Semiconductor	MOSFET N-CH 30V 4A TSMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock17,025	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 4.5V	1.5V @ 1mA	8.3 nC @ 4.5 V	475 pF @ 10 V	±12V	-	700mW (Ta)	48mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
AM2306N-T1-PF-ML	MOSLEADER	Single N 30V 3.5A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCH077N65F-F085	Fairchild Semiconductor	MOSFET N-CH 650V 54A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7162 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 481W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 27A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	5V @ 250µA	164 nC @ 10 V	7162 pF @ 25 V	±20V	-	481W (Tc)	77mOhm @ 27A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
APT12067LFLLG	Microchip Technology	MOSFET N-CH 1200V 18A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 670mOhm @ 9A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	1200 V	18A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	4420 pF @ 25 V	-	-	-	670mOhm @ 9A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
SQJA80EP-T1_BE3	Vishay Siliconix	N-CHANNEL 80-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	75 nC @ 10 V	3800 pF @ 25 V	±20V	-	68W (Tc)	7mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFR210PBF-BE3	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock8,952	MOSFET (Metal Oxide)	200 V	2.6A (Tc)	-	4V @ 250µA	8.2 nC @ 10 V	140 pF @ 25 V	±20V	-	2.5W (Ta), 25W (Tc)	1.5Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IXFX210N30X3	IXYS	MOSFET N-CH 300V 210A PLUS247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1250W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	210A (Tc)	10V	4.5V @ 8mA	375 nC @ 10 V	24200 pF @ 25 V	±20V	-	1250W (Tc)	5.5mOhm @ 105A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247™-3	TO-247-3 Variant
SSF0910S	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 2.0A, 100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock17,865	MOSFET (Metal Oxide)	100 V	2A (Tc)	4.5V, 10V	2.5V @ 250µA	21 nC @ 10 V	1190 pF @ 50 V	±20V	-	1.56W (Tc)	200mOhm @ 2A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SSF2429	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -5A, -20V, FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-6L Package / Case: SOT-23-6	Package: -	Stock43,425	MOSFET (Metal Oxide)	20 V	5A (Ta)	2.5V, 4.5V	1V @ 250µA	17 nC @ 5 V	1450 pF @ 10 V	±12V	-	1.4W (Ta)	35mOhm @ 5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6L	SOT-23-6
DMP21D1UT-13	Diodes Incorporated	MOSFET BVDSS: 8V~24V SOT523 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 260mW (Ta) Rds On (Max) @ Id, Vgs: 710mOhm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	630mA (Ta)	1.8V, 4.5V	1V @ 250µA	1.4 nC @ 4.5 V	33 pF @ 10 V	±8V	-	260mW (Ta)	710mOhm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523