Page 47 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AON6454A_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 8DFN

Package: 8-VDFN Exposed Pad

Stock7,792
AOD4136L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,016
NTB60N06LT4G
ON Semiconductor

MOSFET N-CH 60V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock402,000
NTD5414NT4G
ON Semiconductor

MOSFET N-CH 60V 24A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock144,060
HUF76633S3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 38A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,704
FQPF7N20
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.8A TO-220F

Package: TO-220-3 Full Pack

Stock6,144
ZVN2120A
Diodes Incorporated

MOSFET N-CH 200V 0.18A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock27,600
FDS7082N3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 17.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock26,916
IRFS11N50ATRR
Vishay Siliconix

MOSFET N-CH 500V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,872
IRFZ24
Vishay Siliconix

MOSFET N-CH 60V 17A TO-220AB

Package: TO-220-3

Stock28,044
STD90NH02LT4
STMicroelectronics

MOSFET N-CH 24V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock337,032
DMNH10H028SCT
Diodes Incorporated

MOSFET BVDSS: 61V 100V,TO220-3,T

Package: TO-220-3

Stock6,928
AOW12N60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock5,072
SCH2825-TL-E
ON Semiconductor

MOSFET N-CH 30V 1.6A SCH6

Package: 6-SMD, Flat Leads

Stock177,396
IXFN44N80Q3
IXYS

MOSFET N-CH 800V 37A SOT-227

Package: SOT-227-4, miniBLOC

Stock7,744
IRF6643TRPBF
Infineon Technologies

MOSFET N-CH 150V 6.2A DIRECTFET

Package: DirectFET? Isometric MZ

Stock2,368
SI8487DB-T1-E1
Vishay Siliconix

MOSFET P-CH 30V MICROFOOT

Package: 4-UFBGA

Stock5,280
SI3139K-TP
Micro Commercial Co

P-CHANNEL MOSFET, SOT-723 PACKAG

Package: SOT-723

Stock5,120
BSC080N03MSGATMA1
Infineon Technologies

MOSFET N-CH 30V 53A TDSON-8

Package: 8-PowerTDFN

Stock80,118
IRL2703PBF
Infineon Technologies

MOSFET N-CH 30V 24A TO-220AB

Package: TO-220-3

Stock76,968

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AON6454A_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 8DFN FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock7,792	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	8-DFN (5x6)	8-VDFN Exposed Pad
AOD4136L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 734pF @ 12.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,016	MOSFET (Metal Oxide)	25V	25A (Tc)	4.5V, 10V	2.5V @ 250µA	16.8nC @ 10V	734pF @ 12.5V	±20V	-	2.1W (Ta), 30W (Tc)	11 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
NTB60N06LT4G	ON Semiconductor	MOSFET N-CH 60V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 3075pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 150W (Tj) Rds On (Max) @ Id, Vgs: 16 mOhm @ 30A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock402,000	MOSFET (Metal Oxide)	60V	60A (Ta)	5V	2V @ 250µA	65nC @ 5V	3075pF @ 25V	±15V	-	2.4W (Ta), 150W (Tj)	16 mOhm @ 30A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD5414NT4G	ON Semiconductor	MOSFET N-CH 60V 24A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock144,060	MOSFET (Metal Oxide)	60V	24A (Ta)	10V	4V @ 250µA	48nC @ 10V	1200pF @ 25V	±20V	-	55W (Tc)	37 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
HUF76633S3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 38A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 39A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,704	MOSFET (Metal Oxide)	100V	39A (Tc)	4.5V, 10V	3V @ 250µA	67nC @ 10V	1820pF @ 25V	±16V	-	145W (Tc)	35 mOhm @ 39A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF7N20	Fairchild/ON Semiconductor	MOSFET N-CH 200V 4.8A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,144	MOSFET (Metal Oxide)	200V	4.8A (Tc)	10V	5V @ 250µA	10nC @ 10V	400pF @ 25V	±30V	-	37W (Tc)	690 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
ZVN2120A	Diodes Incorporated	MOSFET N-CH 200V 0.18A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock27,600	MOSFET (Metal Oxide)	200V	180mA (Ta)	10V	3V @ 1mA	-	85pF @ 25V	±20V	-	700mW (Ta)	10 Ohm @ 250mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
FDS7082N3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 17.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2271pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 6 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock26,916	MOSFET (Metal Oxide)	30V	17.5A (Ta)	4.5V, 10V	3V @ 250µA	53nC @ 10V	2271pF @ 15V	±20V	-	3W (Ta)	6 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS11N50ATRR	Vishay Siliconix	MOSFET N-CH 500V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,872	MOSFET (Metal Oxide)	500V	11A (Tc)	10V	4V @ 250µA	52nC @ 10V	1423pF @ 25V	±30V	-	170W (Tc)	520 mOhm @ 6.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24	Vishay Siliconix	MOSFET N-CH 60V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock28,044	MOSFET (Metal Oxide)	60V	17A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	60W (Tc)	100 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STD90NH02LT4	STMicroelectronics	MOSFET N-CH 24V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 95W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock337,032	MOSFET (Metal Oxide)	24V	60A (Tc)	5V, 10V	2.5V @ 250µA	64nC @ 10V	2850pF @ 15V	±20V	-	95W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DMNH10H028SCT	Diodes Incorporated	MOSFET BVDSS: 61V 100V,TO220-3,T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1942pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,928	MOSFET (Metal Oxide)	100V	60A (Tc)	10V	4V @ 250µA	31.9nC @ 10V	1942pF @ 50V	±20V	-	2.8W (Ta)	28 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
AOW12N60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock5,072	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4.5V @ 250µA	50nC @ 10V	2100pF @ 25V	±30V	-	278W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
SCH2825-TL-E	ON Semiconductor	MOSFET N-CH 30V 1.6A SCH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 600mW (Ta) Rds On (Max) @ Id, Vgs: 180 mOhm @ 800mA, 10V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SCH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock177,396	MOSFET (Metal Oxide)	30V	1.6A (Ta)	4V, 10V	-	2nC @ 10V	88pF @ 10V	±20V	Schottky Diode (Isolated)	600mW (Ta)	180 mOhm @ 800mA, 10V	-55°C ~ 125°C (TJ)	Surface Mount	6-SCH	6-SMD, Flat Leads
IXFN44N80Q3	IXYS	MOSFET N-CH 800V 37A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 37A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9840pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,744	MOSFET (Metal Oxide)	800V	37A	10V	6.5V @ 8mA	185nC @ 10V	9840pF @ 25V	±30V	-	780W (Tc)	190 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IRF6643TRPBF	Infineon Technologies	MOSFET N-CH 150V 6.2A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.9V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 34.5 mOhm @ 7.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MZ Package / Case: DirectFET? Isometric MZ	Package: DirectFET? Isometric MZ	Stock2,368	MOSFET (Metal Oxide)	150V	6.2A (Ta), 35A (Tc)	10V	4.9V @ 150µA	55nC @ 10V	2340pF @ 25V	±20V	-	2.8W (Ta), 89W (Tc)	34.5 mOhm @ 7.6A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MZ	DirectFET? Isometric MZ
SI8487DB-T1-E1	Vishay Siliconix	MOSFET P-CH 30V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 31 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-UFBGA	Package: 4-UFBGA	Stock5,280	MOSFET (Metal Oxide)	30V	-	2.5V, 10V	1.2V @ 250µA	80nC @ 10V	2240pF @ 15V	±12V	-	1.1W (Ta), 2.7W (Tc)	31 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-UFBGA
SI3139K-TP	Micro Commercial Co	P-CHANNEL MOSFET, SOT-723 PACKAG FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 150mW Rds On (Max) @ Id, Vgs: 950 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock5,120	MOSFET (Metal Oxide)	20V	660mA	4.5V	800mV @ 250µA	-	170pF @ 16V	±6V	-	150mW	950 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
BSC080N03MSGATMA1	Infineon Technologies	MOSFET N-CH 30V 53A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 53A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock80,118	MOSFET (Metal Oxide)	30V	13A (Ta), 53A (Tc)	4.5V, 10V	2V @ 250µA	27nC @ 10V	2100pF @ 15V	±20V	-	2.5W (Ta), 35W (Tc)	8 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRL2703PBF	Infineon Technologies	MOSFET N-CH 30V 24A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock76,968	MOSFET (Metal Oxide)	30V	24A (Tc)	4.5V, 10V	1V @ 250µA	15nC @ 4.5V	450pF @ 25V	±16V	-	45W (Tc)	40 mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB036N12N3 G	Infineon Technologies	MOSFET N-CH 120V 180A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 60V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock18,444	MOSFET (Metal Oxide)	120V	180A (Tc)	10V	4V @ 270µA	211nC @ 10V	13800pF @ 60V	±20V	-	300W (Tc)	3.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
AON7407	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 20V 14.5A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4195pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x3) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock1,070,424	MOSFET (Metal Oxide)	20V	14.5A (Ta), 40A (Tc)	1.8V, 4.5V	900mV @ 250µA	53nC @ 4.5V	4195pF @ 10V	±8V	-	3.1W (Ta), 29W (Tc)	9.5 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x3)	8-PowerSMD, Flat Leads
DMTH15H017LPSW-13	Diodes Incorporated	MOSFET BVDSS: 101V~250V POWERDI5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3369 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	8A (Ta), 50A (Tc)	4.5V, 10V	2.6V @ 250µA	50 nC @ 10 V	3369 pF @ 75 V	±20V	-	1.5W (Ta), 107W (Tc)	17.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
TO252MDD7N65DS	NextGen Components	MOSFET TO-252 N 650V 7A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 20.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7A (Tc)	10V	-	20.7 nC @ 10 V	-	±30V	-	-	1.4Ohm @ 3.5A, 10V	-	-	-	-
IMZA65R057M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET, PG-TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Vgs (Max): +20V, -2V FET Feature: - Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-3 Package / Case: TO-247-4	Package: -	Stock570	SiCFET (Silicon Carbide)	650 V	35A (Tc)	18V	5.7V @ 5mA	28 nC @ 18 V	930 pF @ 400 V	+20V, -2V	-	133W (Tc)	74mOhm @ 16.7A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-3	TO-247-4
SPA11N60C3IN	Infineon Technologies	MOSFET N-CH 650V 11A TO220-3-31 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-31 Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	11A (Tc)	10V	3.9V @ 500µA	60 nC @ 10 V	1200 pF @ 25 V	±20V	-	33W (Tc)	380mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-31	TO-220-3 Full Pack
FQPF6N50C	Fairchild Semiconductor	3.6A, 500V, N-CHANNEL, MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM60NB099CZ-C0G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 38A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	38A (Tc)	10V	4V @ 250µA	62 nC @ 10 V	2587 pF @ 100 V	±30V	-	298W (Tc)	99mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3