Page 48 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSC884N03MS G
Infineon Technologies

MOSFET N-CH 34V 17A TDSON-8

Package: 8-PowerTDFN

Stock14,880
IRLR3714TRR
Infineon Technologies

MOSFET N-CH 20V 36A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,040
IRFR3708TR
Infineon Technologies

MOSFET N-CH 30V 61A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,072
SI7138DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 60V 30A PPAK SO-8

Package: PowerPAK? SO-8

Stock5,312
NTP5426NG
ON Semiconductor

MOSFET N-CH 60V 120A TO-220AB

Package: TO-220-3

Stock6,320
NTD40N03R-001
ON Semiconductor

MOSFET N-CH 25V 45A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,120
IRF540N_R4942
Fairchild/ON Semiconductor

MOSFET N-CH 100V 33A TO-220AB

Package: TO-220-3

Stock2,832
IRFR9310TRR
Vishay Siliconix

MOSFET P-CH 400V 1.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,960
STB8NM60N
STMicroelectronics

MOSFET N-CH 600V 7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,048
STB130NS04ZBT4
STMicroelectronics

MOSFET N-CH 33V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,688
IXTP460P2
IXYS

MOSFET N-CH 500V 24A TO-220

Package: TO-220-3

Stock54,000
BUK9E04-40A,127
Nexperia USA Inc.

MOSFET N-CH 40V 75A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,360
IRFHM8235TRPBF
Infineon Technologies

MOSFET N-CH 25V 16A 8PQFN

Package: 8-PowerTDFN

Stock6,496
PMN52XPX
Nexperia USA Inc.

MOSFET P-CH 20V SC-74

Package: SC-74, SOT-457

Stock4,176
FDS6680AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 11.5A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock48,780
FDMC6679AZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V POWER33

Package: 8-PowerWDFN

Stock225,768
IPB049NE7N3GATMA1
Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

Package: -

Stock5,700
SM2323PSAC-TRG-ML
MOSLEADER

P -30V -2.9A SOT-23

Package: -

Request a Quote
SI4413DDY-T1-GE3
Vishay Siliconix

MOSFET P-CHANNEL 8SOIC

Package: -

Request a Quote
BSS138BWAHZGT106
Rohm Semiconductor

NCH 60V 380MA, SOT-323, SMALL SI

Package: -

Stock27,759

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSC884N03MS G	Infineon Technologies	MOSFET N-CH 34V 17A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 34V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock14,880	MOSFET (Metal Oxide)	34V	17A (Ta), 85A (Tc)	4.5V, 10V	2V @ 250µA	34nC @ 10V	2700pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	4.5 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IRLR3714TRR	Infineon Technologies	MOSFET N-CH 20V 36A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,040	MOSFET (Metal Oxide)	20V	36A (Tc)	4.5V, 10V	3V @ 250µA	9.7nC @ 4.5V	670pF @ 10V	±20V	-	47W (Tc)	20 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR3708TR	Infineon Technologies	MOSFET N-CH 30V 61A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,072	MOSFET (Metal Oxide)	30V	61A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7138DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 60V 30A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 19.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock5,312	MOSFET (Metal Oxide)	60V	30A (Tc)	6V, 10V	4V @ 250µA	135nC @ 10V	6900pF @ 30V	±20V	-	5.4W (Ta), 96W (Tc)	7.8 mOhm @ 19.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NTP5426NG	ON Semiconductor	MOSFET N-CH 60V 120A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,320	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 250µA	170nC @ 10V	5800pF @ 25V	±20V	-	215W (Tc)	6 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTD40N03R-001	ON Semiconductor	MOSFET N-CH 25V 45A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,120	MOSFET (Metal Oxide)	25V	7.8A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	5.78nC @ 4.5V	584pF @ 20V	±20V	-	1.5W (Ta), 50W (Tc)	16.5 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
IRF540N_R4942	Fairchild/ON Semiconductor	MOSFET N-CH 100V 33A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 79nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 33A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,832	MOSFET (Metal Oxide)	100V	33A (Tc)	10V	4V @ 250µA	79nC @ 20V	1220pF @ 25V	±20V	-	120W (Tc)	40 mOhm @ 33A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR9310TRR	Vishay Siliconix	MOSFET P-CH 400V 1.8A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,960	MOSFET (Metal Oxide)	400V	1.8A (Tc)	10V	4V @ 250µA	13nC @ 10V	270pF @ 25V	±20V	-	50W (Tc)	7 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STB8NM60N	STMicroelectronics	MOSFET N-CH 600V 7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,048	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	4V @ 250µA	19nC @ 10V	560pF @ 50V	±25V	-	70W (Tc)	650 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB130NS04ZBT4	STMicroelectronics	MOSFET N-CH 33V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): Clamped FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,688	MOSFET (Metal Oxide)	33V	80A (Tc)	10V	4V @ 1mA	80nC @ 10V	2700pF @ 25V	Clamped	-	300W (Tc)	9 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP460P2	IXYS	MOSFET N-CH 500V 24A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock54,000	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	2890pF @ 25V	±30V	-	480W (Tc)	270 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BUK9E04-40A,127	Nexperia USA Inc.	MOSFET N-CH 40V 75A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 128nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 8260pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,360	MOSFET (Metal Oxide)	40V	75A (Tc)	4.3V, 10V	2V @ 1mA	128nC @ 5V	8260pF @ 25V	±15V	-	300W (Tc)	4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
IRFHM8235TRPBF	Infineon Technologies	MOSFET N-CH 25V 16A 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.3x3.3), Power33 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,496	MOSFET (Metal Oxide)	25V	16A (Ta)	4.5V, 10V	2.35V @ 25µA	12nC @ 4.5V	1040pF @ 10V	±20V	-	3W (Ta), 30W (Tc)	7.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.3x3.3), Power33	8-PowerTDFN
PMN52XPX	Nexperia USA Inc.	MOSFET P-CH 20V SC-74 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 530mW (Ta), 4.46W (Tc) Rds On (Max) @ Id, Vgs: 62 mOhm @ 3.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SC-74, SOT-457	Package: SC-74, SOT-457	Stock4,176	MOSFET (Metal Oxide)	20V	3.7A (Ta)	1.5V, 4.5V	900mV @ 250µA	12nC @ 4.5V	763pF @ 10V	±12V	-	530mW (Ta), 4.46W (Tc)	62 mOhm @ 3.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SC-74, SOT-457
FDS6680AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 11.5A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock48,780	MOSFET (Metal Oxide)	30V	11.5A (Ta)	4.5V, 10V	3V @ 1mA	30nC @ 10V	1240pF @ 15V	±20V	-	2.5W (Ta)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDMC6679AZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V POWER33 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3970pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock225,768	MOSFET (Metal Oxide)	30V	11.5A (Ta), 20A (Tc)	4.5V, 10V	3V @ 250µA	91nC @ 10V	3970pF @ 15V	±25V	-	2.3W (Ta), 41W (Tc)	10 mOhm @ 11.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
IPB049NE7N3GATMA1	Infineon Technologies	MOSFET N-CH 75V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 91µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 4.9mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock5,700	MOSFET (Metal Oxide)	75 V	80A (Tc)	10V	3.8V @ 91µA	68 nC @ 10 V	4750 pF @ 37.5 V	±20V	-	150W (Tc)	4.9mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SM2323PSAC-TRG-ML	MOSLEADER	P -30V -2.9A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SI4413DDY-T1-GE3	Vishay Siliconix	MOSFET P-CHANNEL 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 5.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	-	-	4.5V, 10V	1.6V @ 250µA	114 nC @ 10 V	4780 pF @ 15 V	-	-	-	5.5mOhm @ 10A, 10V	-55°C ~ 125°C	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
BSS138BWAHZGT106	Rohm Semiconductor	NCH 60V 380MA, SOT-323, SMALL SI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 680mOhm @ 380mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock27,759	MOSFET (Metal Oxide)	60 V	380mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	200mW	680mOhm @ 380mA, 10V	150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
G3R40MT12D	GeneSiC Semiconductor	SIC MOSFET N-CH 71A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Vgs(th) (Max) @ Id: 2.69V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock3,108	SiCFET (Silicon Carbide)	1200 V	71A (Tc)	15V	2.69V @ 10mA	106 nC @ 15 V	2929 pF @ 800 V	±15V	-	333W (Tc)	48mOhm @ 35A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMN62D1LFDQ-7	Diodes Incorporated	MOSFET N-CH 60V 400MA 3DFN T&R 3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN1212-3 (Type C) Package / Case: 3-PowerUDFN	Package: -	Stock9,090	MOSFET (Metal Oxide)	60 V	400mA (Ta)	1.5V, 4V	1V @ 250µA	0.55 nC @ 4.5 V	36 pF @ 25 V	±20V	-	500mW	2Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	U-DFN1212-3 (Type C)	3-PowerUDFN
JANSR2N7269	Microsemi Corporation	MOSFET N-CH 200V 26A TO254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	26A (Tc)	12V	4V @ 1mA	170 nC @ 12 V	-	±20V	-	150W (Tc)	110mOhm @ 26A, 12V	-55°C ~ 150°C	Through Hole	TO-254AA	TO-254-3, TO-254AA
AS6004	ANBON SEMICONDUCTOR (INT'L) LIMITED	P-CHANNEL ENHANCEMENT MODE MOSFE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock44,793	MOSFET (Metal Oxide)	60 V	4A (Ta)	4.5V, 10V	3V @ 250µA	25 nC @ 10 V	930 pF @ 30 V	±20V	-	1.5W (Ta)	120mOhm @ 4A, 10V	150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
XP60SL115DR	YAGEO XSEMI	MOSFET N-CH 600V 28A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 178W (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	5V @ 250µA	145 nC @ 10 V	5120 pF @ 100 V	±20V	-	2W (Ta), 178W (Tc)	115mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
MCAC70N15YHE3-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	70A (Tc)	6V, 10V	4V @ 250µA	40 nC @ 10 V	2527 pF @ 75 V	±20V	-	150W (Tj)	17mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
MCG18P02A-TP	Micro Commercial Co	MCG18P02A-TP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 18A Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 52W Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3030-8 Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	18A	1.8V, 4.5V	900mV @ 250µA	29 nC @ 10 V	1255 pF @ 10 V	±8V	-	52W	8.5mOhm @ 4.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN3030-8	8-PowerWDFN
IPI60R250CP	Infineon Technologies	COOLMOS N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 520µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	3.5V @ 520µA	35 nC @ 10 V	1200 pF @ 100 V	±20V	-	104W (Tc)	250mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262	TO-262-3 Long Leads, I2PAK, TO-262AA