Page 461 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRLR7811WCPBF
Infineon Technologies

MOSFET N-CH 30V 64A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock570,024
SI3456CDV-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 7.7A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock1,770,852
HUFA75344P3_F085
Fairchild/ON Semiconductor

MOSFET N-CH 55V 75A TO-220AB

Package: TO-220-3

Stock6,592
FDS7066N3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 23A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock60,000
IXTP62N15P
IXYS

MOSFET N-CH 150V 62A TO-220

Package: TO-220-3

Stock7,104
IRFBC40ASTRLPBF
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,424
FKP252
Sanken

MOSFET N-CH 250V 25A TO-220F

Package: TO-220-3 Full Pack

Stock34,392
STL12N65M2
STMicroelectronics

MOSFET N-CH 650V 8.5A PWRFLAT56

Package: 8-PowerVDFN

Stock5,424
STP7N90K5
STMicroelectronics

N-CHANNEL 800 V, 0.75 OHM TYP.,

Package: TO-220-3

Stock6,504
R5005CNX
Rohm Semiconductor

MOSFET N-CH 500V 5A TO220

Package: TO-220-2 Full Pack

Stock10,692
IRF7403TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock20,928
SI8475EDB-T1-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-XFBGA, CSPBGA

Stock6,672
DMN61D9U-7
Diodes Incorporated

MOSFET N-CH 60V 0.38A

Package: TO-236-3, SC-59, SOT-23-3

Stock7,568
STB22NM60N
STMicroelectronics

MOSFET N-CH 600V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock116,040
IPP200N15N3GXKSA1
Infineon Technologies

MOSFET N-CH 150V 50A TO220-3

Package: TO-220-3

Stock169,590
BUZ111SL-E3045A
Infineon Technologies

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IPB019N08NF2SATMA1
Infineon Technologies

TRENCH 40<-<100V PG-TO263-3

Package: -

Stock1,341
PSMN2R0-40YLBX
Nexperia USA Inc.

PSMN2R0-40YLB/SOT669/LFPAK

Package: -

Request a Quote
NVMFS5C638NLWFT1G
onsemi

MOSFET N-CH 60V 26A/133A 5DFN

Package: -

Request a Quote
SIS4604DN-T1-GE3
Vishay Siliconix

N-CHANNEL 60 V (D-S) MOSFET POWE

Package: -

Stock31,560

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRLR7811WCPBF	Infineon Technologies	MOSFET N-CH 30V 64A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock570,024	MOSFET (Metal Oxide)	30V	64A (Tc)	4.5V, 10V	2.5V @ 250µA	31nC @ 4.5V	2260pF @ 15V	±12V	-	71W (Tc)	10.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI3456CDV-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 7.7A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 34 mOhm @ 6.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock1,770,852	MOSFET (Metal Oxide)	30V	7.7A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	460pF @ 15V	±20V	-	2W (Ta), 3.3W (Tc)	34 mOhm @ 6.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
HUFA75344P3_F085	Fairchild/ON Semiconductor	MOSFET N-CH 55V 75A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 210nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 285W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,592	MOSFET (Metal Oxide)	55V	75A (Tc)	10V	4V @ 250µA	210nC @ 20V	3200pF @ 25V	±20V	-	285W (Tc)	8 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDS7066N3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 23A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 4973pF @ 15V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock60,000	MOSFET (Metal Oxide)	30V	23A (Ta)	4.5V, 10V	3V @ 250µA	69nC @ 5V	4973pF @ 15V	±16V	-	3W (Ta)	5.5 mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IXTP62N15P	IXYS	MOSFET N-CH 150V 62A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,104	MOSFET (Metal Oxide)	150V	62A (Tc)	10V	5.5V @ 250µA	70nC @ 10V	2250pF @ 25V	±20V	-	350W (Tc)	40 mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFBC40ASTRLPBF	Vishay Siliconix	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,424	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	42nC @ 10V	1036pF @ 25V	±30V	-	125W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FKP252	Sanken	MOSFET N-CH 250V 25A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 75 mOhm @ 12A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock34,392	MOSFET (Metal Oxide)	250V	25A (Ta)	10V	4.5V @ 1mA	-	2000pF @ 25V	±30V	-	40W (Tc)	75 mOhm @ 12A, 10V	150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
STL12N65M2	STMicroelectronics	MOSFET N-CH 650V 8.5A PWRFLAT56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,424	MOSFET (Metal Oxide)	650V	5A (Tc)	10V	4V @ 250µA	12.5nC @ 10V	410pF @ 100V	±25V	-	48W (Tc)	750 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerVDFN
STP7N90K5	STMicroelectronics	N-CHANNEL 800 V, 0.75 OHM TYP., FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 7A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V Vgs (Max): ±30V FET Feature: Current Sensing Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 810 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock6,504	MOSFET (Metal Oxide)	900V	7A	10V	5V @ 100µA	17.7nC @ 10V	425pF @ 10V	±30V	Current Sensing	110W (Tc)	810 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
R5005CNX	Rohm Semiconductor	MOSFET N-CH 500V 5A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-2 Full Pack	Package: TO-220-2 Full Pack	Stock10,692	MOSFET (Metal Oxide)	500V	5A (Tc)	10V	4.5V @ 1mA	10.8nC @ 10V	320pF @ 25V	±30V	-	40W (Tc)	1.6 Ohm @ 2.5A, 10V	150°C (TJ)	Through Hole	TO-220FM	TO-220-2 Full Pack
IRF7403TRPBF	Infineon Technologies	MOSFET N-CH 30V 8.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock20,928	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	1V @ 250µA	57nC @ 10V	1200pF @ 25V	±20V	-	2.5W (Ta)	22 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SI8475EDB-T1-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 32 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock6,672	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	1.5V @ 250µA	-	-	±12V	-	1.1W (Ta), 2.7W (Tc)	32 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
DMN61D9U-7	Diodes Incorporated	MOSFET N-CH 60V 0.38A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 28.5pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 50mA, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,568	MOSFET (Metal Oxide)	60V	380mA (Ta)	1.8V, 5V	1V @ 250µA	0.4nC @ 4.5V	28.5pF @ 30V	±20V	-	370mW (Ta)	2 Ohm @ 50mA, 5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
STB22NM60N	STMicroelectronics	MOSFET N-CH 600V 16A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock116,040	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	4V @ 100µA	44nC @ 10V	1300pF @ 50V	±30V	-	125W (Tc)	220 mOhm @ 8A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP200N15N3GXKSA1	Infineon Technologies	MOSFET N-CH 150V 50A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1820pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 20 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock169,590	MOSFET (Metal Oxide)	150V	50A (Tc)	8V, 10V	4V @ 90µA	31nC @ 10V	1820pF @ 75V	±20V	-	150W (Tc)	20 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
BUZ111SL-E3045A	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 80A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W Rds On (Max) @ Id, Vgs: - Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	80A	-	-	-	-	-	-	300W	-	175°C	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPB019N08NF2SATMA1	Infineon Technologies	TRENCH 40<-<100V PG-TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 166A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 194µA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock1,341	MOSFET (Metal Oxide)	80 V	166A (Tc)	6V, 10V	3.8V @ 194µA	186 nC @ 10 V	8700 pF @ 40 V	±20V	-	250W (Tc)	1.95mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PSMN2R0-40YLBX	Nexperia USA Inc.	PSMN2R0-40YLB/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.05V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6416 pF @ 20 V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 166W (Ta) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	180A (Ta)	4.5V, 10V	2.05V @ 1mA	87 nC @ 10 V	6416 pF @ 20 V	±20V	Schottky Diode (Body)	166W (Ta)	2.1mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NVMFS5C638NLWFT1G	onsemi	MOSFET N-CH 60V 26A/133A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	26A (Ta), 133A (Tc)	4.5V, 10V	2V @ 250µA	40.7 nC @ 10 V	2880 pF @ 25 V	±20V	-	4W (Ta), 100W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	5-DFNW (4.9x5.9) (8-SOFL-WF)	8-PowerTDFN, 5 Leads
SIS4604DN-T1-GE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 44.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 33.7W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock31,560	MOSFET (Metal Oxide)	60 V	14.6A (Ta), 44.4A (Tc)	7.5V, 10V	4V @ 250µA	22 nC @ 10 V	960 pF @ 30 V	±20V	-	3.6W (Ta), 33.7W (Tc)	9.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
MD06P115	Diotec Semiconductor	MOSFET SOT26 P -60V 0.085OHM FET Type: P-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 3.1A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: -	Package: -	Request a Quote	-	-	3.1A	-	-	-	-	-	-	1.5W	-	-	Surface Mount	SOT-26	-
TPH9R00CQH-LQ	Toshiba Semiconductor and Storage	UMOS10 SOP-ADV(N) 150V 9MOHM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960mW (Ta), 210W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 32A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: -	Stock27,105	MOSFET (Metal Oxide)	150 V	64A (Tc)	8V, 10V	4.3V @ 1mA	44 nC @ 10 V	5400 pF @ 75 V	±20V	-	960mW (Ta), 210W (Tc)	9mOhm @ 32A, 10V	175°C	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
NVD5C478NT4G	onsemi	MOSFET N-CH 40V 14A/43A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock2,940	MOSFET (Metal Oxide)	40 V	14A (Ta), 43A (Tc)	10V	4V @ 30µA	14 nC @ 10 V	840 pF @ 25 V	±20V	-	3W (Ta), 30W (Tc)	8.4mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH4008LFDFWQ-7	Diodes Incorporated	MOSFET N-CH 40V 11.6A 6UDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 990mW (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Package / Case: 6-UDFN Exposed Pad	Package: -	Stock16,050	MOSFET (Metal Oxide)	40 V	11.6A (Ta)	4.5V, 10V	3V @ 250µA	14.2 nC @ 10 V	1030 pF @ 20 V	±20V	-	990mW (Ta)	11.5mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	U-DFN2020-6 (SWP) (Type F)	6-UDFN Exposed Pad
CSD25402Q3AT	Texas Instruments	MOSFET P-CH 20V 15A/76A 8VSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.15V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (3x3.3) Package / Case: 8-PowerVDFN	Package: -	Stock23,778	MOSFET (Metal Oxide)	20 V	15A (Ta), 76A (Tc)	1.8V, 4.5V	1.15V @ 250µA	9.7 nC @ 4.5 V	1790 pF @ 10 V	±12V	-	2.8W (Ta), 69W (Tc)	8.9mOhm @ 10A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSONP (3x3.3)	8-PowerVDFN
NVTFWS040N10MCLTAG	onsemi	PTNG 100V LL U8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: -	Stock5,307	MOSFET (Metal Oxide)	100 V	6.1A (Ta), 21A (Tc)	4.5V, 10V	3V @ 26µA	8.6 nC @ 10 V	520 pF @ 50 V	±20V	-	3.1W (Ta), 36W (Tc)	38mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
PJQ4464AP-AU_R2_000A1	Panjit International Inc.	60V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 16A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN3333-8 Package / Case: 8-PowerVDFN	Package: -	Stock9,507	MOSFET (Metal Oxide)	60 V	7.3A (Ta), 33A (Tc)	4.5V, 10V	2.5V @ 250µA	13.5 nC @ 4.5 V	1574 pF @ 25 V	±20V	-	2.4W (Ta), 48W (Tc)	17mOhm @ 16A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN3333-8	8-PowerVDFN
FDS6676AS-G	onsemi	30V N-CHANNEL POWERTRENCH SYNCFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2510 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 6mOhm @ 14.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	14.5A (Ta)	4.5V, 10V	3V @ 1mA	63 nC @ 10 V	2510 pF @ 15 V	±20V	-	1W (Ta)	6mOhm @ 14.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)