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Infineon Technologies |
MOSFET P-CH 30V 70A TO252-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7720pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 70A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,224 |
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MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 2V @ 150µA | 91nC @ 10V | 7720pF @ 15V | ±20V | - | 100W (Tc) | 6.8 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT-223
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
|
Package: TO-261-4, TO-261AA |
Stock384,960 |
|
MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 4.5V, 10V | 2V @ 12µA | 10nC @ 10V | 330pF @ 25V | ±20V | - | 1.8W (Ta) | 90 mOhm @ 1.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 30V 4.7A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2W (Ta)
- Rds On (Max) @ Id, Vgs: 62 mOhm @ 4.9A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock6,144 |
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MOSFET (Metal Oxide) | 30V | 4.7A (Ta) | 4.5V, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | ±20V | Schottky Diode (Isolated) | 2W (Ta) | 62 mOhm @ 4.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
HEX/MOS N-CH 30V 11A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,968 |
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MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.25V @ 250µA | 11nC @ 4.5V | 770pF @ 15V | ±20V | - | 2.5W (Ta) | 13.8 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 79W (Tc)
- Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,232 |
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MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | ±20V | - | 79W (Tc) | 6.3 mOhm @ 21A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock285,420 |
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MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 1.8V @ 50µA | 2.67nC @ 10V | 69pF @ 25V | ±20V | - | 360mW (Ta) | 6 Ohm @ 170mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
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Microsemi Corporation |
MOSFET N-CH 500V TO-254AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 4W (Ta), 150W (Tc)
- Rds On (Max) @ Id, Vgs: 415 mOhm @ 8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-254AA
- Package / Case: TO-254-3, TO-254AA (Straight Leads)
|
Package: TO-254-3, TO-254AA (Straight Leads) |
Stock2,048 |
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MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | - | ±20V | - | 4W (Ta), 150W (Tc) | 415 mOhm @ 8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-254AA | TO-254-3, TO-254AA (Straight Leads) |
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Renesas Electronics America |
MOSFET N-CH 500V 12A TO220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
|
Package: TO-220-3 Full Pack |
Stock3,840 |
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MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | - | 29nC @ 10V | 1100pF @ 25V | ±30V | - | 30W (Tc) | 620 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET P-CH 60V 15.5A DPAK
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock126,240 |
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MOSFET (Metal Oxide) | 60V | 15.5A (Ta) | 5V | 2V @ 250µA | 26nC @ 5V | 1190pF @ 25V | ±20V | - | 65W (Tc) | 150 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 400V 2.5A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Rds On (Max) @ Id, Vgs: 3.4 Ohm @ 1.25A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock16,800 |
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MOSFET (Metal Oxide) | 400V | 2.5A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 230pF @ 25V | ±30V | - | 55W (Tc) | 3.4 Ohm @ 1.25A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 60V 12A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Rds On (Max) @ Id, Vgs: 150 mOhm @ 12A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock474,888 |
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MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 4V @ 250µA | 23nC @ 20V | 300pF @ 25V | ±20V | - | 53W (Tc) | 150 mOhm @ 12A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 30V 80A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 2440pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 40A, 10V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock104,640 |
|
MOSFET (Metal Oxide) | 30V | 80A (Ta) | 4.5V, 10V | 3V @ 250µA | 33nC @ 5V | 2440pF @ 15V | ±20V | - | 68W (Tc) | 7 mOhm @ 40A, 10V | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 10A TO-267
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5320pF @ 25V
- Vgs (Max): ±20V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 695W (Tc)
- Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
|
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Stock7,216 |
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MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | - | 200nC @ 5V | 5320pF @ 25V | ±20V | Depletion Mode | 695W (Tc) | 1.5 Ohm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 44A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,168 |
|
MOSFET (Metal Oxide) | 300V | 44A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET P-CH 200V 0.122A SOT23-5
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 122mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Rds On (Max) @ Id, Vgs: 28 Ohm @ 150mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-5
- Package / Case: SC-74A, SOT-753
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Package: SC-74A, SOT-753 |
Stock284,700 |
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MOSFET (Metal Oxide) | 200V | 122mA (Ta) | 10V | 3.5V @ 1mA | - | 100pF @ 25V | ±20V | - | 750mW (Ta) | 28 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-5 | SC-74A, SOT-753 |
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Fairchild/ON Semiconductor |
MOSFET N-CH 75V 9.2A POWER56
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4765pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 11.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
|
Package: 8-PowerTDFN |
Stock36,000 |
|
MOSFET (Metal Oxide) | 75V | 9.2A (Ta), 49A (Tc) | 4.5V, 10V | 3V @ 250µA | 91nC @ 10V | 4765pF @ 40V | ±20V | - | 2.5W (Ta), 96W (Tc) | 14.5 mOhm @ 11.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 43A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 42 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
|
Package: TO-220-3 |
Stock15,636 |
|
MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 4V @ 250µA | 200nC @ 10V | 2400pF @ 25V | ±20V | - | 200W (Tc) | 42 mOhm @ 22A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
Vishay Siliconix |
MOSFET N-CH 100V 1.15A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Rds On (Max) @ Id, Vgs: 250 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,560,560 |
|
MOSFET (Metal Oxide) | 100V | 1.15A (Ta) | 10V | 4V @ 250µA | 5nC @ 10V | - | ±20V | - | 730mW (Ta) | 250 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 80V 83A PWRDI5060-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta), 83W (Tc)
- Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 80 V | 83A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 41.2 nC @ 10 V | 2345 pF @ 40 V | ±20V | - | 1.3W (Ta), 83W (Tc) | 7.8mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 18A/40A TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 37W (Tc)
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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Package: - |
Stock43,086 |
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MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 2V @ 250µA | 17 nC @ 10 V | 1100 pF @ 15 V | ±20V | - | 2.1W (Ta), 37W (Tc) | 4.5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
COMMON-DRAIN NCH MOSFET, 12V, 13
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TCSPAC-153001
- Package / Case: 10-SMD, No Lead
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Package: - |
Stock30,000 |
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MOSFET (Metal Oxide) | 12 V | 13.5A (Ta) | 2.5V, 4.5V | 1.4V @ 1.11mA | 25 nC @ 4 V | - | ±8V | - | 800mW (Ta) | 2.75mOhm @ 6A, 4.5V | 150°C | Surface Mount | TCSPAC-153001 | 10-SMD, No Lead |
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onsemi |
MOSFET N-CH 80V 6.7A/21A 5DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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Package: - |
Stock4,500 |
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MOSFET (Metal Oxide) | 80 V | 6.7A (Ta), 21A (Tc) | 10V | 4V @ 20µA | 6.9 nC @ 10 V | 370 pF @ 40 V | ±20V | - | 3.5W (Ta), 33W (Tc) | 32mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Micro Commercial Co |
MOSFET N-CH
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 598 pF @ 50 V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 63W
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 800 V | 4A | 10V | 4.5V @ 250µA | 13 nC @ 10 V | 598 pF @ 50 V | ±30V | - | 63W | 1.2Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V SOT23
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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Package: - |
Request a Quote |
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Diotec Semiconductor |
MOSFET, DPAK, N, 60V, 50A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 65 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3, DPak
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 65 V | 50A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 14 nC @ 10 V | 825 pF @ 30 V | ±20V | - | 42W (Tc) | 11mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
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GeneSiC Semiconductor |
SIC MOSFET N-CH 61A TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 2.7V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds: 4523 pF @ 1000 V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 438W (Tc)
- Rds On (Max) @ Id, Vgs: 58mOhm @ 40A, 15V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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Package: - |
Stock2,130 |
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SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 2.7V @ 8mA | 182 nC @ 15 V | 4523 pF @ 1000 V | ±15V | - | 438W (Tc) | 58mOhm @ 40A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
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IXYS |
MOSFET N-CH 1000V 4A TO263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 25 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.3Ohm @ 2A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2PAK)
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Package: - |
Request a Quote |
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MOSFET (Metal Oxide) | 1000 V | 4A (Tc) | 10V | 6V @ 250µA | 26 nC @ 10 V | 1456 pF @ 25 V | ±20V | - | 150W (Tc) | 3.3Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5.75)
- Package / Case: 8-PowerTDFN
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Package: - |
Stock65,853 |
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MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 2.4V @ 500µA | 74 nC @ 10 V | 7200 pF @ 20 V | ±20V | - | 960mW (Ta), 170W (Tc) | 1.24mOhm @ 50A, 10V | 175°C | Surface Mount | 8-SOP Advance (5x5.75) | 8-PowerTDFN |
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