Page 463 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRFR48Z
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,096
IRF7805APBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock286,140
IRL3502PBF
Infineon Technologies

MOSFET N-CH 20V 110A TO-220AB

Package: TO-220-3

Stock7,328
IRFR5410TRL
Infineon Technologies

MOSFET P-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock6,320
FQD4N20TF
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock120,012
FQP2P25
Fairchild/ON Semiconductor

MOSFET P-CH 250V 2.3A TO-220

Package: TO-220-3

Stock163,200
BUK9520-55A,127
NXP

MOSFET N-CH 55V 54A TO220AB

Package: TO-220-3

Stock4,928
APT41M80L
Microsemi Corporation

MOSFET N-CH 800V 43A TO-264

Package: TO-264-3, TO-264AA

Stock6,576
IXTY3N50P
IXYS

MOSFET N-CH 500V 3.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,520
AOD4454
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 150V 3A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock256,416
SUM50020EL-GE3
Vishay Siliconix

MOSFET N-CH 60V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,536
FDD86540
Fairchild/ON Semiconductor

MOSFET N-CH 60V 50A DPAK-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,336
STI24NM60N
STMicroelectronics

MOSFET N CH 600V 17A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,448
TPH8R903NL,LQ
Toshiba Semiconductor and Storage

MOSFET N CH 30V 20A 8SOP

Package: 8-PowerVDFN

Stock29,610
NTTFS5826NLTAG
ON Semiconductor

MOSFET N-CH 60V 8A 8-WDFN

Package: 8-PowerWDFN

Stock113,640
RFG75N05E
Harris Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
PJT7413_S2_00001
Panjit International Inc.

20V P-CHANNEL ENHANCEMENT MODE M

Package: -

Request a Quote
AOT66916L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 35.5/120A TO220

Package: -

Stock5,034
CPH3325-TL-E
onsemi

PCH 4V DRIVE SERIES

Package: -

Request a Quote
ISZ520N20NM6ATMA1
Infineon Technologies

TRENCH >=100V

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRFR48Z	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,096	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 50µA	60nC @ 10V	1720pF @ 25V	±20V	-	91W (Tc)	11 mOhm @ 37A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IRF7805APBF	Infineon Technologies	MOSFET N-CH 30V 13A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock286,140	MOSFET (Metal Oxide)	30V	13A (Ta)	4.5V	3V @ 250µA	31nC @ 5V	-	±12V	-	2.5W (Ta)	11 mOhm @ 7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRL3502PBF	Infineon Technologies	MOSFET N-CH 20V 110A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,328	MOSFET (Metal Oxide)	20V	110A (Tc)	4.5V, 7V	700mV @ 250µA	110nC @ 4.5V	4700pF @ 15V	±10V	-	140W (Tc)	7 mOhm @ 64A, 7V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFR5410TRL	Infineon Technologies	MOSFET P-CH 100V 13A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 205 mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock6,320	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	58nC @ 10V	760pF @ 25V	±20V	-	66W (Tc)	205 mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD4N20TF	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock120,012	MOSFET (Metal Oxide)	200V	3A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	1.4 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQP2P25	Fairchild/ON Semiconductor	MOSFET P-CH 250V 2.3A TO-220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 4 Ohm @ 1.15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock163,200	MOSFET (Metal Oxide)	250V	2.3A (Tc)	10V	5V @ 250µA	8.5nC @ 10V	250pF @ 25V	±30V	-	52W (Tc)	4 Ohm @ 1.15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
BUK9520-55A,127	NXP	MOSFET N-CH 55V 54A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,928	MOSFET (Metal Oxide)	55V	54A (Tc)	4.5V, 10V	2V @ 1mA	-	2210pF @ 25V	±10V	-	118W (Tc)	18 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
APT41M80L	Microsemi Corporation	MOSFET N-CH 800V 43A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8070pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1040W (Tc) Rds On (Max) @ Id, Vgs: 210 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,576	MOSFET (Metal Oxide)	800V	43A (Tc)	10V	5V @ 2.5mA	260nC @ 10V	8070pF @ 25V	±30V	-	1040W (Tc)	210 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
IXTY3N50P	IXYS	MOSFET N-CH 500V 3.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 409pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,520	MOSFET (Metal Oxide)	500V	3.6A (Tc)	10V	5.5V @ 50µA	9.3nC @ 10V	409pF @ 25V	±30V	-	70W (Tc)	2 Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
AOD4454	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 150V 3A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 94 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock256,416	MOSFET (Metal Oxide)	150V	3A (Ta), 20A (Tc)	7V, 10V	4.6V @ 250µA	20nC @ 10V	985pF @ 75V	±20V	-	2.5W (Ta), 100W (Tc)	94 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SUM50020EL-GE3	Vishay Siliconix	MOSFET N-CH 60V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11113pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,536	MOSFET (Metal Oxide)	60V	120A (Tc)	4.5V, 10V	2.5V @ 250µA	126nC @ 10V	11113pF @ 30V	±20V	-	375W (Tc)	2.1 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD86540	Fairchild/ON Semiconductor	MOSFET N-CH 60V 50A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 21.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,336	MOSFET (Metal Oxide)	60V	21.5A (Ta), 50A (Tc)	8V, 10V	4V @ 250µA	90nC @ 10V	6340pF @ 30V	±20V	-	3.1W (Ta), 127W (Tc)	4.1 mOhm @ 21.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
STI24NM60N	STMicroelectronics	MOSFET N CH 600V 17A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,448	MOSFET (Metal Oxide)	600V	17A (Tc)	10V	4V @ 250µA	46nC @ 10V	1400pF @ 50V	±30V	-	125W (Tc)	190 mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
TPH8R903NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 20A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock29,610	MOSFET (Metal Oxide)	30V	20A (Tc)	10V	2.3V @ 1mA	9.8nC @ 10V	820pF @ 15V	±20V	-	1.6W (Ta), 24W (Tc)	8.9 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
NTTFS5826NLTAG	ON Semiconductor	MOSFET N-CH 60V 8A 8-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-WDFN (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock113,640	MOSFET (Metal Oxide)	60V	8A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	850pF @ 25V	±20V	-	3.1W (Ta), 19W (Tc)	24 mOhm @ 7.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-WDFN (3.3x3.3)	8-PowerWDFN
RFG75N05E	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	75A (Tc)	10V	4V @ 250µA	400 nC @ 20 V	-	±20V	-	240W (Tc)	8mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
PJT7413_S2_00001	Panjit International Inc.	20V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 2.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	2.5A (Ta)	1.5V, 4.5V	1.2V @ 250µA	7 nC @ 4.5 V	522 pF @ 10 V	±12V	-	750mW (Ta)	85mOhm @ 2.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-363	6-TSSOP, SC-88, SOT-363
AOT66916L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 35.5/120A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock5,034	MOSFET (Metal Oxide)	100 V	35.5A (Ta), 120A (Tc)	6V, 10V	3.5V @ 250µA	78 nC @ 10 V	6180 pF @ 50 V	±20V	-	8.3W (Ta), 277W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
CPH3325-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISZ520N20NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs(th) (Max) @ Id: 4.5V @ 31µA Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-34 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4.5A (Ta), 26A (Tc)	10V, 15V	4.5V @ 31µA	14.9 nC @ 10 V	960 pF @ 100 V	±20V	-	2.5W (Ta), 88W (Tc)	47.8mOhm @ 15A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-34	8-PowerVDFN
NTBL045N065SC1	onsemi	SILICON CARBIDE (SIC) MOSFET - 3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V Vgs (Max): +22.6V, -8V FET Feature: - Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock5,613	SiCFET (Silicon Carbide)	650 V	73A (Tc)	15V, 18V	4.3V @ 8mA	105 nC @ 18 V	1870 pF @ 325 V	+22.6V, -8V	-	348W (Tc)	50mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
TSM80N1R2CI	Taiwan Semiconductor Corporation	800V, 5.5A, SINGLE N-CHANNEL POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 685 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	5.5A (Tc)	10V	4V @ 250µA	19.4 nC @ 10 V	685 pF @ 100 V	±30V	-	25W (Tc)	1.2Ohm @ 1.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
IGT60R042D1ATMA1	Infineon Technologies	GAN HV FET Type: - Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
R6022YNXC7G	Rohm Semiconductor	NCH 600V 13A, TO-220FM, POWER MO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs(th) (Max) @ Id: 6V @ 1.8mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 6.5A, 12V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V, 12V	6V @ 1.8mA	33 nC @ 10 V	1400 pF @ 100 V	±30V	-	65W (Tc)	165mOhm @ 6.5A, 12V	150°C (TJ)	Through Hole	TO-220FM	TO-220-3 Full Pack
STD18N60M6	STMicroelectronics	MOSFET N-CH 600V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,911	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4.75V @ 250µA	16.8 nC @ 10 V	650 pF @ 100 V	±25V	-	110W (Tc)	280mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ5444-AU_R2_000A1	Panjit International Inc.	40V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1759 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	12.7A (Ta), 70A (Tc)	4.5V, 10V	2.5V @ 250µA	17 nC @ 4.5 V	1759 pF @ 25 V	±20V	-	2.4W (Ta), 100W (Tc)	6.5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
HUF76143P3	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 225W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	3V @ 250µA	114 nC @ 10 V	3900 pF @ 25 V	±20V	-	225W (Tc)	5.5mOhm @ 75A, 10V	-40°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
SQJQ184ER-T1_GE3	Vishay Siliconix	AUTOMOTIVE N-CHANNEL 80 V (D-S) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 430A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16009 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: 8-PowerSMD, Gull Wing	Package: -	Stock1,674	MOSFET (Metal Oxide)	80 V	430A (Tc)	10V	3.5V @ 250µA	240 nC @ 10 V	16009 pF @ 25 V	±20V	-	600W (Tc)	1.4mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	8-PowerSMD, Gull Wing