Page 49 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSS84AKW-BX
Nexperia USA Inc.

MOSFET N-CH SC-70

Package: -

Stock5,696
AOD2610_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,616
SIE800DF-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 50A POLARPAK

Package: 10-PolarPAK? (S)

Stock2,960
SI4892DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock18,768
FDZ493P
Fairchild/ON Semiconductor

MOSFET P-CH 20V 4.6A 9-BGA

Package: 9-WFBGA

Stock7,872
IRF520STRR
Vishay Siliconix

MOSFET N-CH 100V 9.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,584
FDD9409L_F085
Fairchild/ON Semiconductor

N-CHANNEL POWERTRENCH MOSFET

Package: -

Stock6,384
STP14NF12FP
STMicroelectronics

MOSFET N-CH 120V 8.5A TO-220FP

Package: TO-220-3 Full Pack

Stock625,608
DN2470K4-G
Microchip Technology

MOSFET N-CH 700V 0.17A 3DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,808
IXFL132N50P3
IXYS

MOSFET N-CH 500V 63A ISOPLUS264

Package: ISOPLUS264?

Stock4,560
SPB100N03S203T
Infineon Technologies

MOSFET N-CH 30V 100A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock29,664
SIA444DJT-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 12A SC-70

Package: PowerPAK? SC-70-6

Stock360,012
STW19NM50N
STMicroelectronics

MOSFET N-CH 500V 14A TO-247

Package: TO-247-3

Stock34,560
IRFSL4010PBF
Infineon Technologies

MOSFET N-CH 100V 180A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock42,834
STS7NF60L
STMicroelectronics

MOSFET N-CH 60V 7.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock910,584
DMP3004SSS-13
Diodes Incorporated

MOSFET P-CH 30V 16.2A 8SO T&R 2

Package: -

Stock7,500
DMN3028LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V,SOT23,T&R,

Package: -

Stock156,807
SQ4050EY-T1_BE3
Vishay Siliconix

MOSFET N-CHANNEL 40V 19A 8SOIC

Package: -

Stock15,468
IXFH46N30T
IXYS

MOSFET N-CH 300V 46A TO247

Package: -

Request a Quote
NTH4L080N120SC1
onsemi

SICFET N-CH 1200V 29A TO247-4

Package: -

Stock1,290

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSS84AKW-BX	Nexperia USA Inc.	MOSFET N-CH SC-70 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock5,696	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AOD2610_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V TO-252 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,616	-	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
SIE800DF-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 50A POLARPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 10-PolarPAK? (S) Package / Case: 10-PolarPAK? (S)	Package: 10-PolarPAK? (S)	Stock2,960	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	3V @ 250µA	35nC @ 10V	1600pF @ 15V	±20V	-	5.2W (Ta), 104W (Tc)	7.2 mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	10-PolarPAK? (S)	10-PolarPAK? (S)
SI4892DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.8A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 12.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock18,768	MOSFET (Metal Oxide)	30V	8.8A (Ta)	4.5V, 10V	800mV @ 250µA (Min)	10.5nC @ 5V	-	±20V	-	1.6W (Ta)	12 mOhm @ 12.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FDZ493P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4.6A 9-BGA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 754pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta) Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 9-BGA (1.5x1.5) Package / Case: 9-WFBGA	Package: 9-WFBGA	Stock7,872	MOSFET (Metal Oxide)	20V	4.6A (Ta)	2.5V, 4.5V	1.5V @ 250µA	11nC @ 4.5V	754pF @ 10V	±12V	-	1.7W (Ta)	46 mOhm @ 4.6A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	9-BGA (1.5x1.5)	9-WFBGA
IRF520STRR	Vishay Siliconix	MOSFET N-CH 100V 9.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,584	MOSFET (Metal Oxide)	100V	9.2A (Tc)	10V	4V @ 250µA	16nC @ 10V	360pF @ 25V	±20V	-	3.7W (Ta), 60W (Tc)	270 mOhm @ 5.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDD9409L_F085	Fairchild/ON Semiconductor	N-CHANNEL POWERTRENCH MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,384	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STP14NF12FP	STMicroelectronics	MOSFET N-CH 120V 8.5A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 180 mOhm @ 7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock625,608	MOSFET (Metal Oxide)	120V	8.5A (Tc)	10V	4V @ 250µA	21nC @ 10V	460pF @ 25V	±20V	-	25W (Tc)	180 mOhm @ 7A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
DN2470K4-G	Microchip Technology	MOSFET N-CH 700V 0.17A 3DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 42 Ohm @ 100mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,808	MOSFET (Metal Oxide)	700V	170mA (Tj)	0V	-	-	540pF @ 25V	±20V	Depletion Mode	2.5W (Ta)	42 Ohm @ 100mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFL132N50P3	IXYS	MOSFET N-CH 500V 63A ISOPLUS264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 43 mOhm @ 66A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264? Package / Case: ISOPLUS264?	Package: ISOPLUS264?	Stock4,560	MOSFET (Metal Oxide)	500V	63A (Tc)	10V	5V @ 8mA	250nC @ 10V	18600pF @ 25V	±30V	-	520W (Tc)	43 mOhm @ 66A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS264?	ISOPLUS264?
SPB100N03S203T	Infineon Technologies	MOSFET N-CH 30V 100A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock29,664	MOSFET (Metal Oxide)	30V	100A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SIA444DJT-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 12A SC-70 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 17 mOhm @ 7.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	Package: PowerPAK? SC-70-6	Stock360,012	MOSFET (Metal Oxide)	30V	12A (Tc)	4.5V, 10V	2.2V @ 250µA	15nC @ 10V	560pF @ 15V	±20V	-	3.5W (Ta), 19W (Tc)	17 mOhm @ 7.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Single	PowerPAK? SC-70-6
STW19NM50N	STMicroelectronics	MOSFET N-CH 500V 14A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock34,560	MOSFET (Metal Oxide)	500V	14A (Tc)	10V	4V @ 250µA	34nC @ 10V	1000pF @ 50V	±25V	-	110W (Tc)	250 mOhm @ 7A, 10V	150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IRFSL4010PBF	Infineon Technologies	MOSFET N-CH 100V 180A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9575pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 106A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock42,834	MOSFET (Metal Oxide)	100V	180A (Tc)	10V	4V @ 250µA	215nC @ 10V	9575pF @ 50V	±20V	-	375W (Tc)	4.7 mOhm @ 106A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
STS7NF60L	STMicroelectronics	MOSFET N-CH 60V 7.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock910,584	MOSFET (Metal Oxide)	60V	7.5A (Tc)	5V, 10V	1V @ 250µA	34nC @ 4.5V	1700pF @ 25V	±16V	-	2.5W (Tc)	19.5 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP3004SSS-13	Diodes Incorporated	MOSFET P-CH 30V 16.2A 8SO T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7693 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock7,500	MOSFET (Metal Oxide)	30 V	16.2A (Ta)	4.5V, 10V	2.5V @ 250µA	156 nC @ 10 V	7693 pF @ 15 V	±20V	-	1.2W (Ta)	4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMN3028LQ-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V,SOT23,T&R, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock156,807	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	1.8V @ 250µA	10.9 nC @ 10 V	680 pF @ 15 V	±20V	-	860mW (Ta)	25mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SQ4050EY-T1_BE3	Vishay Siliconix	MOSFET N-CHANNEL 40V 19A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock15,468	MOSFET (Metal Oxide)	40 V	19A (Tc)	4.5V, 10V	2.5V @ 250µA	51 nC @ 10 V	2406 pF @ 20 V	±20V	-	6W (Tc)	8mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
IXFH46N30T	IXYS	MOSFET N-CH 300V 46A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4770 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	46A (Tc)	10V	5V @ 4mA	86 nC @ 10 V	4770 pF @ 25 V	±20V	-	460W (Tc)	80mOhm @ 23A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
NTH4L080N120SC1	onsemi	SICFET N-CH 1200V 29A TO247-4 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,290	SiCFET (Silicon Carbide)	1200 V	29A (Tc)	20V	4.3V @ 5mA	56 nC @ 20 V	1670 pF @ 800 V	+25V, -15V	-	170W (Tc)	110mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
PMPB24EPX	Nexperia USA Inc.	MOSFET P-CH 30V 6.4A DFN2020MD-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1069 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 15.6W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock9,000	MOSFET (Metal Oxide)	30 V	6.4A (Ta)	4.5V, 10V	2.5V @ 250µA	28 nC @ 10 V	1069 pF @ 15 V	±20V	-	1.8W (Ta), 15.6W (Tc)	28mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
SI1308EDL-T1-BE3	Vishay Siliconix	MOSFET N-CH 30V 1.5A/1.4A SC70-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 400mW (Ta), 500mW (Tc) Rds On (Max) @ Id, Vgs: 132mOhm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-3 Package / Case: SC-70, SOT-323	Package: -	Stock9,264	MOSFET (Metal Oxide)	30 V	1.5A (Ta), 1.4A (Tc)	-	1.5V @ 250µA	4.1 nC @ 10 V	105 pF @ 15 V	±12V	-	400mW (Ta), 500mW (Tc)	132mOhm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-3	SC-70, SOT-323
IPW65R022CFD7AXKSA1	Infineon Technologies	AUTOMOTIVE_COOLMOS PG-TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 2.91mA Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 58.2A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Package: -	Stock393	MOSFET (Metal Oxide)	650 V	96A (Tc)	10V	4.5V @ 2.91mA	234 nC @ 10 V	11659 pF @ 400 V	±20V	-	446W (Tc)	22mOhm @ 58.2A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
PJQ2416_R1_00001	Panjit International Inc.	DFN2020B-6L, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1177 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020B-6 Package / Case: 6-WDFN Exposed Pad	Package: -	Stock4,284	MOSFET (Metal Oxide)	20 V	11A (Ta)	1.8V, 4.5V	1V @ 250µA	16 nC @ 4.5 V	1177 pF @ 10 V	±10V	-	2W (Ta)	11mOhm @ 9.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020B-6	6-WDFN Exposed Pad
AUIRFR5305TR	Infineon Technologies	MOSFET P-CH 55V 31A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,199	MOSFET (Metal Oxide)	55 V	31A (Tc)	-	4V @ 250µA	63 nC @ 10 V	1200 pF @ 25 V	-	-	-	65mOhm @ 16A, 10V	-	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJA138K-AU_R1_000A1	Panjit International Inc.	SOT-23, MOSFET N-CHANNEL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock34,296	MOSFET (Metal Oxide)	50 V	500mA (Ta)	2.5V, 10V	1.5V @ 250µA	1 nC @ 4.5 V	50 pF @ 25 V	±20V	-	500mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMP3021SSS-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SO-8 T&R 2 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock4,299	MOSFET (Metal Oxide)	30 V	10.4A (Ta), 39A (Tc)	5V, 10V	2.5V @ 250µA	34 nC @ 10 V	1799 pF @ 15 V	±25V	-	1W (Ta)	15mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NVD5C460NLT4G	onsemi	MOSFET N-CH 40V 18A/73A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 47W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	40 V	18A (Ta), 73A (Tc)	4.5V, 10V	2.2V @ 60µA	36 nC @ 10 V	2100 pF @ 25 V	±20V	-	3W (Ta), 47W (Tc)	4.6mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63