Page 477 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF3707ZCSTRRP
Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock95,844
IRFR2905ZTRRPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock62,388
BSP89L6327HTSA1
Infineon Technologies

MOSFET N-CH 240V 350MA SOT-223

Package: TO-261-4, TO-261AA

Stock6,224
PMFPB8040XP,115
Nexperia USA Inc.

MOSFET P-CH 20V 2.7A HUSON6

Package: 6-UDFN Exposed Pad

Stock7,776
BUK9E15-60E,127
NXP

MOSFET N-CH 60V 54A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,256
PMR400UN,115
NXP

MOSFET N-CH 30V 0.8A SOT416

Package: SC-75, SOT-416

Stock161,400
HUF75307T3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 2.6A SOT-223

Package: TO-261-4, TO-261AA

Stock8,424
IRFL214TR
Vishay Siliconix

MOSFET N-CH 250V 790MA SOT223

Package: TO-261-4, TO-261AA

Stock547,188
TK8A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 550V 7.5A TO-220SIS

Package: TO-220-3 Full Pack

Stock5,376
AOT13N50
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 13A TO220

Package: TO-220-3

Stock5,904
AON6504
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 51A 8DFN

Package: 8-PowerSMD, Flat Leads

Stock206,448
TSM60NB380CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,616
STD10NF10T4
STMicroelectronics

MOSFET N-CH 100V 13A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,334,988
BUK962R8-30B,118
Nexperia USA Inc.

MOSFET N-CH 30V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,712
IPA60R230P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220FP-3

Package: TO-220-3 Full Pack

Stock16,920
FDP5500_F085
Fairchild/ON Semiconductor

MOSFET N-CH 55V 80A TO-220AB

Package: TO-220-3

Stock438,000
IXFN180N15P
IXYS

MOSFET N-CH 150V 150A SOT-227B

Package: SOT-227-4, miniBLOC

Stock7,116
NTE2376
NTE Electronics, Inc

MOSFET N-CHANNEL 200V 30A TO247

Package: -

Request a Quote
FQD4P25TM-WS
onsemi

MOSFET P-CH 250V 3.1A DPAK

Package: -

Request a Quote
IPB067N08N3GATMA1
Infineon Technologies

MOSFET N-CH 80V 80A D2PAK

Package: -

Stock16,545

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF3707ZCSTRRP	Infineon Technologies	MOSFET N-CH 30V 59A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.25V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock95,844	MOSFET (Metal Oxide)	30V	59A (Tc)	4.5V, 10V	2.25V @ 25µA	15nC @ 4.5V	1210pF @ 15V	±20V	-	57W (Tc)	9.5 mOhm @ 21A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR2905ZTRRPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 36A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock62,388	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 250µA	44nC @ 10V	1380pF @ 25V	±20V	-	110W (Tc)	14.5 mOhm @ 36A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSP89L6327HTSA1	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock6,224	MOSFET (Metal Oxide)	240V	350mA (Ta)	4.5V, 10V	1.8V @ 108µA	6.4nC @ 10V	140pF @ 25V	±20V	-	1.8W (Ta)	6 Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
PMFPB8040XP,115	Nexperia USA Inc.	MOSFET P-CH 20V 2.7A HUSON6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 485mW (Ta), 6.25W (Tc) Rds On (Max) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020-6 Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock7,776	MOSFET (Metal Oxide)	20V	2.7A (Ta)	1.8V, 4.5V	1V @ 250µA	8.6nC @ 4.5V	550pF @ 10V	±12V	Schottky Diode (Isolated)	485mW (Ta), 6.25W (Tc)	102 mOhm @ 2.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020-6	6-UDFN Exposed Pad
BUK9E15-60E,127	NXP	MOSFET N-CH 60V 54A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2651pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,256	MOSFET (Metal Oxide)	60V	54A (Tc)	5V, 10V	2.1V @ 1mA	20.5nC @ 5V	2651pF @ 25V	±10V	-	96W (Tc)	13 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
PMR400UN,115	NXP	MOSFET N-CH 30V 0.8A SOT416 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 530mW (Tc) Rds On (Max) @ Id, Vgs: 480 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock161,400	MOSFET (Metal Oxide)	30V	800mA (Tc)	1.8V, 4.5V	1V @ 250µA	0.89nC @ 4.5V	43pF @ 25V	±8V	-	530mW (Tc)	480 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75	SC-75, SOT-416
HUF75307T3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 2.6A SOT-223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-4 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock8,424	MOSFET (Metal Oxide)	55V	2.6A (Ta)	10V	4V @ 250µA	17nC @ 20V	250pF @ 25V	±20V	-	1.1W (Ta)	90 mOhm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-4	TO-261-4, TO-261AA
IRFL214TR	Vishay Siliconix	MOSFET N-CH 250V 790MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 790mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 470mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock547,188	MOSFET (Metal Oxide)	250V	790mA (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2W (Ta), 3.1W (Tc)	2 Ohm @ 470mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
TK8A55DA(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 7.5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 1.07 Ohm @ 3.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,376	MOSFET (Metal Oxide)	550V	7.5A (Ta)	10V	4V @ 1mA	16nC @ 10V	800pF @ 25V	±30V	-	40W (Tc)	1.07 Ohm @ 3.8A, 10V	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
AOT13N50	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 13A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 510 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock5,904	MOSFET (Metal Oxide)	500V	13A (Tc)	10V	4.5V @ 250µA	37nC @ 10V	1633pF @ 25V	±30V	-	250W (Tc)	510 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
AON6504	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 51A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2719pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock206,448	MOSFET (Metal Oxide)	30V	51A (Ta), 85A (Tc)	4.5V, 10V	2.2V @ 250µA	60nC @ 10V	2719pF @ 15V	±20V	-	7.3W (Ta), 83W (Tc)	1.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
TSM60NB380CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 795pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 2.85A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,616	MOSFET (Metal Oxide)	600V	9.5A (Tc)	10V	4V @ 250µA	19.4nC @ 10V	795pF @ 100V	±30V	-	83W (Tc)	380 mOhm @ 2.85A, 10V	-50°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
STD10NF10T4	STMicroelectronics	MOSFET N-CH 100V 13A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,334,988	MOSFET (Metal Oxide)	100V	13A (Tc)	10V	4V @ 250µA	21nC @ 10V	460pF @ 25V	±20V	-	50W (Tc)	130 mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK962R8-30B,118	Nexperia USA Inc.	MOSFET N-CH 30V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 89nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10185pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,712	MOSFET (Metal Oxide)	30V	75A (Tc)	5V, 10V	2V @ 1mA	89nC @ 5V	10185pF @ 25V	±15V	-	300W (Tc)	2.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA60R230P6XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220FP-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 530µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 6.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,920	MOSFET (Metal Oxide)	600V	16.8A (Tc)	10V	4.5V @ 530µA	31nC @ 10V	1450pF @ 100V	±20V	-	33W (Tc)	230 mOhm @ 6.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
FDP5500_F085	Fairchild/ON Semiconductor	MOSFET N-CH 55V 80A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 3565pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock438,000	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	269nC @ 20V	3565pF @ 25V	±20V	-	375W (Tc)	7 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFN180N15P	IXYS	MOSFET N-CH 150V 150A SOT-227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 150A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 680W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock7,116	MOSFET (Metal Oxide)	150V	150A	10V	5V @ 4mA	240nC @ 10V	7000pF @ 25V	±20V	-	680W (Tc)	11 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
NTE2376	NTE Electronics, Inc	MOSFET N-CHANNEL 200V 30A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	30A (Tc)	10V	4V @ 250µA	140 nC @ 10 V	2800 pF @ 25 V	±20V	-	190W (Tc)	85mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
FQD4P25TM-WS	onsemi	MOSFET P-CH 250V 3.1A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1.55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	3.1A (Tc)	10V	5V @ 250µA	14 nC @ 10 V	420 pF @ 25 V	±30V	-	2.5W (Ta), 45W (Tc)	2.1Ohm @ 1.55A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPB067N08N3GATMA1	Infineon Technologies	MOSFET N-CH 80V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 73µA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock16,545	MOSFET (Metal Oxide)	80 V	80A (Tc)	6V, 10V	3.5V @ 73µA	56 nC @ 10 V	3840 pF @ 40 V	±20V	-	136W (Tc)	6.7mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPF009N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 302A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 249µA Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-U02 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock2,262	MOSFET (Metal Oxide)	40 V	49A (Ta), 302A (Tc)	6V, 10V	3.4V @ 249µA	315 nC @ 10 V	15000 pF @ 20 V	±20V	-	3.8W (Ta), 375W (Tc)	0.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-U02	TO-263-7, D2PAK (6 Leads + Tab)
CPC3730CTR	IXYS Integrated Circuits Division	MOSFET N-CH 350V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350 V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Vgs (Max): - FET Feature: Depletion Mode Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 35Ohm @ 140mA, 0V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	350 V	140mA (Ta)	-	-	-	200 pF @ 25 V	-	Depletion Mode	-	35Ohm @ 140mA, 0V	-	Surface Mount	SOT-89	TO-243AA
PJMF380N65E1_T0_00001	Panjit International Inc.	650V/ 380MOHM SUPER JUNCTION EAS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 769 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Stock5,994	MOSFET (Metal Oxide)	650 V	10.6A (Tc)	10V	4V @ 250µA	22 nC @ 10 V	769 pF @ 400 V	±30V	-	33W (Tc)	380mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
AONS66916	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: -	Stock8,940	MOSFET (Metal Oxide)	100 V	100A (Tc)	6V, 10V	3.6V @ 250µA	95 nC @ 10 V	5325 pF @ 50 V	±20V	-	215W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerSMD, Flat Leads
TK2P90E-RQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.9Ohm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock5,934	MOSFET (Metal Oxide)	900 V	2A (Ta)	10V	4V @ 200µA	12 nC @ 10 V	500 pF @ 25 V	±30V	-	80W (Tc)	5.9Ohm @ 1A, 10V	150°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
MCAC88N12-TP	Micro Commercial Co	N-CHANNEL MOSFET, DFN5060 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4514 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 120W Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	88A	-	4V @ 250µA	65 nC @ 10 V	4514 pF @ 50 V	±20V	-	120W	7.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
IPT020N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NTMT064N65S3H	onsemi	MOSFET N-CH 650V 40A 4TDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 3.9mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3745 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-TDFN (8x8) Package / Case: 4-PowerTSFN	Package: -	Stock8,796	MOSFET (Metal Oxide)	650 V	40A (Tc)	10V	4V @ 3.9mA	82 nC @ 10 V	3745 pF @ 400 V	±30V	-	260W (Tc)	64mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-TDFN (8x8)	4-PowerTSFN