Page 478 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFP054N
Infineon Technologies

MOSFET N-CH 55V 81A TO-247AC

Package: TO-247-3

Stock13,368
AOB418
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 105A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,108
APTC60DAM35T1G
Microsemi Corporation

MOSFET N-CH 600V 72A SP1

Package: SP1

Stock6,912
STU75N3LLH6-S
STMicroelectronics

MOSFET N-CH 30V 75A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,376
NVMFS5C410NWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock6,384
TN0104N3-G-P003
Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA)

Stock6,592
IRF2807STRLPBF
Infineon Technologies

MOSFET N-CH 75V 82A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock26,244
FQH44N10_F133
Fairchild/ON Semiconductor

MOSFET N-CH 100V 48A TO-247

Package: TO-247-3

Stock8,340
IRF6619TR1PBF
Infineon Technologies

MOSFET N-CH 20V 30A DIRECTFET

Package: DirectFET? Isometric MX

Stock22,710
IPD35N12S3L24ATMA1
Infineon Technologies

N-CHANNEL_100+

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,560
FDU6N25
Fairchild/ON Semiconductor

MOSFET N-CH 250V 4.4A IPAK-3

Package: TO-251-3 Stub Leads, IPak

Stock37,050
IRFP4004PBF
Infineon Technologies

MOSFET N-CH 40V 195A TO-247AC

Package: TO-247-3

Stock261,012
FQA70N15
Fairchild/ON Semiconductor

MOSFET N-CH 150V 70A TO-3P

Package: TO-3P-3, SC-65-3

Stock5,440
IRFP4310ZPBF
Infineon Technologies

MOSFET N-CH 100V 120A TO-247AC

Package: TO-247-3

Stock7,648
STF14NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO220FP

Package: TO-220-3 Full Pack

Stock147,804
FDMS6673BZ
Fairchild/ON Semiconductor

MOSFET P-CH 30V 15.2A POWER56

Package: 8-PowerTDFN

Stock113,184
NTK3139PT1G
ON Semiconductor

MOSFET P-CH 20V 0.66A SOT-723

Package: SOT-723

Stock294,204
IAUC26N10S5L245ATMA1
Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

Package: -

Stock15,000
AIMW120R035M1HXKSA1
Infineon Technologies

1200V COOLSIC MOSFET PG-TO247-3

Package: -

Stock1,584
SIHB28N60EF-T5-GE3
Vishay Siliconix

N-CHANNEL 600V

Package: -

Stock2,400

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFP054N	Infineon Technologies	MOSFET N-CH 55V 81A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock13,368	MOSFET (Metal Oxide)	55V	81A (Tc)	10V	4V @ 250µA	130nC @ 10V	2900pF @ 25V	±20V	-	170W (Tc)	12 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
AOB418	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 105A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2Pak) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,108	MOSFET (Metal Oxide)	100V	9.5A (Ta), 105A (Tc)	4.5V, 10V	3.9V @ 250µA	83nC @ 10V	5200pF @ 50V	±12V	-	2.1W (Ta), 333W (Tc)	9.7 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2Pak)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTC60DAM35T1G	Microsemi Corporation	MOSFET N-CH 600V 72A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock6,912	MOSFET (Metal Oxide)	600V	72A	10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	±20V	-	416W (Tc)	35 mOhm @ 72A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
STU75N3LLH6-S	STMicroelectronics	MOSFET N-CH 30V 75A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 37.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,376	MOSFET (Metal Oxide)	30V	75A (Tc)	4.5V, 10V	2.5V @ 250µA	17nC @ 4.5V	1690pF @ 25V	±20V	-	60W (Tc)	5.9 mOhm @ 37.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
NVMFS5C410NWFAFT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 166W (Tc) Rds On (Max) @ Id, Vgs: 0.92 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock6,384	MOSFET (Metal Oxide)	40V	46A (Ta), 300A (Tc)	10V	3.5V @ 250µA	86nC @ 10V	6100pF @ 25V	±20V	-	3.9W (Ta), 166W (Tc)	0.92 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
TN0104N3-G-P003	Microchip Technology	MOSFET N-CH 40V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs(th) (Max) @ Id: 1.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA)	Package: TO-226-3, TO-92-3 (TO-226AA)	Stock6,592	MOSFET (Metal Oxide)	40V	450mA (Ta)	3V, 10V	1.6V @ 500µA	-	70pF @ 20V	±20V	-	1W (Tc)	1.8 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA)
IRF2807STRLPBF	Infineon Technologies	MOSFET N-CH 75V 82A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3820pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock26,244	MOSFET (Metal Oxide)	75V	82A (Tc)	10V	4V @ 250µA	160nC @ 10V	3820pF @ 25V	±20V	-	230W (Tc)	13 mOhm @ 43A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQH44N10_F133	Fairchild/ON Semiconductor	MOSFET N-CH 100V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock8,340	MOSFET (Metal Oxide)	100V	48A (Tc)	10V	4V @ 250µA	62nC @ 10V	1800pF @ 25V	±25V	-	180W (Tc)	39 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IRF6619TR1PBF	Infineon Technologies	MOSFET N-CH 20V 30A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock22,710	MOSFET (Metal Oxide)	20V	30A (Ta), 150A (Tc)	4.5V, 10V	2.45V @ 250µA	57nC @ 4.5V	5040pF @ 10V	±20V	-	2.8W (Ta), 89W (Tc)	2.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
IPD35N12S3L24ATMA1	Infineon Technologies	N-CHANNEL_100+ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 39µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 71W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,560	MOSFET (Metal Oxide)	120V	35A (Tc)	4.5V, 10V	2.4V @ 39µA	39nC @ 10V	2700pF @ 25V	±20V	-	71W (Tc)	24 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
FDU6N25	Fairchild/ON Semiconductor	MOSFET N-CH 250V 4.4A IPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock37,050	MOSFET (Metal Oxide)	250V	4.4A (Tc)	10V	5V @ 250µA	6nC @ 10V	250pF @ 25V	±30V	-	50W (Tc)	1.1 Ohm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
IRFP4004PBF	Infineon Technologies	MOSFET N-CH 40V 195A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8920pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock261,012	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	4V @ 250µA	330nC @ 10V	8920pF @ 25V	±20V	-	380W (Tc)	1.7 mOhm @ 195A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
FQA70N15	Fairchild/ON Semiconductor	MOSFET N-CH 150V 70A TO-3P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 175nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock5,440	MOSFET (Metal Oxide)	150V	70A (Tc)	10V	4V @ 250µA	175nC @ 10V	5400pF @ 25V	±25V	-	330W (Tc)	28 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IRFP4310ZPBF	Infineon Technologies	MOSFET N-CH 100V 120A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 280W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock7,648	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	4V @ 150µA	170nC @ 10V	6860pF @ 50V	±20V	-	280W (Tc)	6 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
STF14NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock147,804	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 100µA	27nC @ 10V	816pF @ 50V	±25V	-	25W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
FDMS6673BZ	Fairchild/ON Semiconductor	MOSFET P-CH 30V 15.2A POWER56 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5915pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 73W (Tc) Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 15.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock113,184	MOSFET (Metal Oxide)	30V	15.2A (Ta), 28A (Tc)	4.5V, 10V	3V @ 250µA	130nC @ 10V	5915pF @ 15V	±25V	-	2.5W (Ta), 73W (Tc)	6.8 mOhm @ 15.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
NTK3139PT1G	ON Semiconductor	MOSFET P-CH 20V 0.66A SOT-723 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 16V Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 310mW (Ta) Rds On (Max) @ Id, Vgs: 480 mOhm @ 780mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: SOT-723	Stock294,204	MOSFET (Metal Oxide)	20V	660mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	-	170pF @ 16V	±6V	-	310mW (Ta)	480 mOhm @ 780mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723
IAUC26N10S5L245ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 26A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 762 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 13A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	Package: -	Stock15,000	MOSFET (Metal Oxide)	100 V	26A (Tj)	4.5V, 10V	2.2V @ 13µA	12 nC @ 10 V	762 pF @ 50 V	±20V	-	40W (Tc)	24.5mOhm @ 13A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
AIMW120R035M1HXKSA1	Infineon Technologies	1200V COOLSIC MOSFET PG-TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V Vgs (Max): +23V, -7V FET Feature: - Power Dissipation (Max): 228W (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 25A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Package: -	Stock1,584	SiCFET (Silicon Carbide)	1200 V	52A (Tc)	18V	5.7V @ 10mA	59 nC @ 18 V	2130 pF @ 800 V	+23V, -7V	-	228W (Tc)	46mOhm @ 25A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
SIHB28N60EF-T5-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 123mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,400	MOSFET (Metal Oxide)	600 V	28A (Tc)	10V	4V @ 250µA	120 nC @ 10 V	2714 pF @ 100 V	±30V	-	250W (Tc)	123mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC16DN25NS3GATMA1	Infineon Technologies	MOSFET N-CH 250V 10.9A TDSON-8-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 32µA Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 62.5W (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	Package: -	Stock20,946	MOSFET (Metal Oxide)	250 V	10.9A (Tc)	10V	4V @ 32µA	11.4 nC @ 10 V	920 pF @ 100 V	±20V	-	62.5W (Tc)	165mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
PSMQC040N10NS2_R2_00601	Panjit International Inc.	100V/ 4.4MOHM/ EXCELLECT LOW FOM FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock17,823	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPAN60R180P7SXKSA1	Infineon Technologies	MOSFET 600V TO220 FULL PACK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: -	Stock1,404	MOSFET (Metal Oxide)	600 V	18A (Tc)	10V	4V @ 280µA	25 nC @ 10 V	1081 pF @ 400 V	±20V	-	26W (Tc)	-	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
SI7155DP-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 31A/100A PPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock84,714	MOSFET (Metal Oxide)	40 V	31A (Ta), 100A (Tc)	4.5V, 10V	2.3V @ 250µA	330 nC @ 10 V	12900 pF @ 20 V	±20V	-	6.25W (Ta), 104W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTH4L020N090SC1	onsemi	SILICON CARBIDE MOSFET, NCHANNEL FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 450 V Vgs (Max): +22V, -8V FET Feature: - Power Dissipation (Max): 484W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Request a Quote	SiCFET (Silicon Carbide)	900 V	116A (Tc)	15V, 18V	4.3V @ 20mA	196 nC @ 15 V	4415 pF @ 450 V	+22V, -8V	-	484W (Tc)	28mOhm @ 60A, 15V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
AUIRF2804L-313	Infineon Technologies	MOSFET N-CH 40V 195A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	195A (Tc)	10V	4V @ 250µA	240 nC @ 10 V	6450 pF @ 25 V	±20V	-	300W (Tc)	2.3mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2PAK, TO-262AA
IPTG029N13NM6ATMA1	Infineon Technologies	TRENCH >=100V FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQM40014EM_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15525 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	10V	3.5V @ 250µA	250 nC @ 10 V	15525 pF @ 25 V	±20V	-	375W (Tc)	1mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2PAK (6 Leads + Tab)