Page 480 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP80N06S2L06AKSA1
Infineon Technologies

MOSFET N-CH 55V 80A TO220-3

Package: TO-220-3

Stock6,032
NP40N10YDF-E1-AY
Renesas Electronics America

MOSFET N-CH 100V 40A MP-25ZP

Package: 8-PowerLDFN

Stock5,488
TP0610KL-TR1-E3
Vishay Siliconix

MOSFET P-CH 60V 270MA TO92-3

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock5,136
APT60M80JVR
Microsemi Corporation

MOSFET N-CH 600V 55A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,008
FQPF9N50C
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220F

Package: TO-220-3 Full Pack

Stock53,868
IRF634NSPBF
Vishay Siliconix

MOSFET N-CH 250V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,932
IPD127N06LGBTMA1
Infineon Technologies

MOSFET N-CH 60V 50A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,624
BSL372SNH6327XTSA1
Infineon Technologies

MOSFET N-CH 100V 2A 6TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock5,088
IXFP102N15T
IXYS

MOSFET N-CH 150V 102A TO-220

Package: TO-220-3

Stock7,248
IRF740STRRPBF
Vishay Siliconix

MOSFET N-CH 400V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock331,296
IXTP90N055T2
IXYS

MOSFET N-CH 55V 90A TO-220

Package: TO-220-3

Stock4,160
2SJ661-DL-1E
ON Semiconductor

MOSFET P-CH 60V 38A

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,416
TSM80N950CH C5G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock3,568
FQD12N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock179,676
NTMFS5C460NLT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN

Stock16,836
IRFP32N50KPBF
Vishay Siliconix

MOSFET N-CH 500V 32A TO-247AC

Package: TO-247-3

Stock5,984
IPT60R022S7XTMA1
Infineon Technologies

MOSFET N-CH 600V 23A 8HSOF

Package: -

Stock3,384
DMN3028L-13
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

Package: -

Request a Quote
2SK1274-T-AZ
Renesas Electronics Corporation

SMALL SIGNAL N-CHANNEL MOSFET

Package: -

Request a Quote
SSFH6538
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 38A, 650V,

Package: -

Stock1,974

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP80N06S2L06AKSA1	Infineon Technologies	MOSFET N-CH 55V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 69A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,032	MOSFET (Metal Oxide)	55V	80A (Tc)	4.5V, 10V	2V @ 180µA	150nC @ 10V	3800pF @ 25V	±20V	-	250W (Tc)	6.3 mOhm @ 69A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
NP40N10YDF-E1-AY	Renesas Electronics America	MOSFET N-CH 100V 40A MP-25ZP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-PowerLDFN	Package: 8-PowerLDFN	Stock5,488	MOSFET (Metal Oxide)	100V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	71nC @ 10V	3150pF @ 25V	±20V	-	1W (Ta), 120W (Tc)	25 mOhm @ 20A, 10V	175°C (TJ)	Surface Mount	8-HSON	8-PowerLDFN
TP0610KL-TR1-E3	Vishay Siliconix	MOSFET P-CH 60V 270MA TO92-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-226AA Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock5,136	MOSFET (Metal Oxide)	60V	270mA (Ta)	4.5V, 10V	3V @ 250µA	3nC @ 15V	-	±20V	-	800mW (Ta)	6 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-226AA	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
APT60M80JVR	Microsemi Corporation	MOSFET N-CH 600V 55A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 55A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 568W (Tc) Rds On (Max) @ Id, Vgs: 80 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,008	MOSFET (Metal Oxide)	600V	55A	10V	4V @ 5mA	870nC @ 10V	14500pF @ 25V	±30V	-	568W (Tc)	80 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
FQPF9N50C	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock53,868	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	44W (Tc)	800 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
IRF634NSPBF	Vishay Siliconix	MOSFET N-CH 250V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,932	MOSFET (Metal Oxide)	250V	8A (Tc)	10V	4V @ 250µA	34nC @ 10V	620pF @ 25V	±20V	-	3.8W (Ta), 88W (Tc)	435 mOhm @ 4.8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPD127N06LGBTMA1	Infineon Technologies	MOSFET N-CH 60V 50A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,624	MOSFET (Metal Oxide)	60V	50A (Tc)	4.5V, 10V	2V @ 80µA	69nC @ 10V	2300pF @ 30V	±20V	-	136W (Tc)	12.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSL372SNH6327XTSA1	Infineon Technologies	MOSFET N-CH 100V 2A 6TSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 218µA Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 329pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 220 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSOP6-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock5,088	MOSFET (Metal Oxide)	100V	2A (Ta)	4.5V, 10V	1.8V @ 218µA	14.3nC @ 10V	329pF @ 25V	±20V	-	2W (Ta)	220 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSOP6-6	SOT-23-6 Thin, TSOT-23-6
IXFP102N15T	IXYS	MOSFET N-CH 150V 102A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,248	MOSFET (Metal Oxide)	150V	102A (Tc)	10V	5V @ 1mA	87nC @ 10V	5220pF @ 25V	±20V	-	455W (Tc)	18 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF740STRRPBF	Vishay Siliconix	MOSFET N-CH 400V 10A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock331,296	MOSFET (Metal Oxide)	400V	10A (Tc)	10V	4V @ 250µA	63nC @ 10V	1400pF @ 25V	±20V	-	3.1W (Ta), 125W (Tc)	550 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTP90N055T2	IXYS	MOSFET N-CH 55V 90A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,160	MOSFET (Metal Oxide)	55V	90A (Tc)	10V	4V @ 250µA	42nC @ 10V	2770pF @ 25V	±20V	-	150W (Tc)	8.4 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
2SJ661-DL-1E	ON Semiconductor	MOSFET P-CH 60V 38A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4360pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 19A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,416	MOSFET (Metal Oxide)	60V	38A (Ta)	4V, 10V	-	80nC @ 10V	4360pF @ 20V	±20V	-	1.65W (Ta), 65W (Tc)	39 mOhm @ 19A, 10V	150°C (TJ)	Surface Mount	TO-263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TSM80N950CH C5G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 691pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 950 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock3,568	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	4V @ 250µA	19.6nC @ 10V	691pF @ 100V	±30V	-	110W (Tc)	950 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
FQD12N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock179,676	MOSFET (Metal Oxide)	200V	9A (Tc)	5V, 10V	2V @ 250µA	21nC @ 5V	1080pF @ 25V	±20V	-	2.5W (Ta), 55W (Tc)	280 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS5C460NLT1G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock16,836	MOSFET (Metal Oxide)	40V	-	4.5V, 10V	2V @ 250µA	23nC @ 10V	1300pF @ 20V	±20V	-	3.6W (Ta), 50W (Tc)	4.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
IRFP32N50KPBF	Vishay Siliconix	MOSFET N-CH 500V 32A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5280pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock5,984	MOSFET (Metal Oxide)	500V	32A (Tc)	10V	5V @ 250µA	190nC @ 10V	5280pF @ 25V	±30V	-	460W (Tc)	160 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPT60R022S7XTMA1	Infineon Technologies	MOSFET N-CH 600V 23A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 1.44mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5639 pF @ 300 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-2 Package / Case: 8-PowerSFN	Package: -	Stock3,384	MOSFET (Metal Oxide)	600 V	23A (Tc)	12V	4.5V @ 1.44mA	150 nC @ 12 V	5639 pF @ 300 V	±20V	-	390W (Tc)	22mOhm @ 23A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-2	8-PowerSFN
DMN3028L-13	Diodes Incorporated	MOSFET BVDSS: 25V~30V SOT23 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	6.2A (Ta)	2.5V, 10V	1.8V @ 250µA	10.9 nC @ 10 V	680 pF @ 15 V	±20V	-	860mW (Ta)	25mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
2SK1274-T-AZ	Renesas Electronics Corporation	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSFH6538	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 38A, 650V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 322W (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock1,974	MOSFET (Metal Oxide)	650 V	38A (Tc)	10V	4V @ 250µA	55 nC @ 10 V	3200 pF @ 50 V	±30V	-	322W (Tc)	99mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
MTDF1N03HDR2	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIHP24N80AEF-GE3	Vishay Siliconix	EF SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1889 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 195mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	20A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	1889 pF @ 100 V	±30V	-	208W (Tc)	195mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMN4035LQ-7	Diodes Incorporated	MOSFET N-CH 40V 4.6A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 720mW Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock16,548	MOSFET (Metal Oxide)	40 V	4.6A (Ta)	4.5V, 10V	3V @ 250µA	12.5 nC @ 10 V	574 pF @ 20 V	±20V	-	720mW	42mOhm @ 4.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
DMTH8028LFVWQ-7	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock6,000	MOSFET (Metal Oxide)	80 V	27A (Tc)	4.5V, 10V	2.5V @ 250µA	10.4 nC @ 10 V	631 pF @ 40 V	±20V	-	1.5W (Ta)	25mOhm @ 5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
GT1K2P15K	Goford Semiconductor	MOSFET P-CH 150V 27A TO-252 FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3275 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: -	Package: -	Stock7,500	MOSFET (Metal Oxide)	-	27A (Tc)	4.5V, 10V	3V @ 250µA	86 nC @ 10 V	3275 pF @ 75 V	±20V	-	-	110mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	-
G33N03S	Goford Semiconductor	N30V,RD(MAX)<12M@10V,RD(MAX)<13M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock11,790	MOSFET (Metal Oxide)	30 V	13A (Tc)	4.5V, 10V	1.1V @ 250µA	13 nC @ 5 V	1550 pF @ 15 V	±20V	-	2.5W (Tc)	12mOhm @ 8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
NTHLD040N65S3HF	onsemi	MOSFET N-CH 650V 65A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.1mA Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5945 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	65A (Tc)	10V	5V @ 2.1mA	159 nC @ 10 V	5945 pF @ 400 V	±30V	-	446W (Tc)	40mOhm @ 32.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
DMT3009LFVW-13	Diodes Incorporated	MOSFET N-CH 30V 12A PWRDI3333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	12A (Ta), 50A (Tc)	3.8V, 10V	3V @ 250µA	12 nC @ 10 V	823 pF @ 15 V	±20V	-	2.3W (Ta)	11mOhm @ 14.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN