Page 481 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRL540NLPBF
Infineon Technologies

MOSFET N-CH 100V 36A TO-262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock86,400
IRL3715Z
Infineon Technologies

MOSFET N-CH 20V 50A TO-220AB

Package: TO-220-3

Stock399,084
IRF3709
Infineon Technologies

MOSFET N-CH 30V 90A TO-220AB

Package: TO-220-3

Stock42,552
SI4688DY-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 8.9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock453,528
FQPF8N60CT
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7.5A TO-220F

Package: TO-220-3 Full Pack

Stock5,328
SI1419DH-T1-E3
Vishay Siliconix

MOSFET P-CH 200V 0.3A SC70-6

Package: 6-TSSOP, SC-88, SOT-363

Stock6,800
HUFA75852G3
Fairchild/ON Semiconductor

MOSFET N-CH 150V 75A TO-247

Package: TO-247-3

Stock4,512
STB100NH02LT4
STMicroelectronics

MOSFET N-CH 24V 60A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,900
APTML10UM09R004T1AG
Microsemi Corporation

MOSFET N-CH 100V 154A SP1

Package: SP1

Stock3,216
SUD50P04-09L-E3
Vishay Siliconix

MOSFET P-CH 40V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock63,264
IXFK24N100F
IXYS

MOSFET N-CH 1KV 24A TO264

Package: TO-264-3, TO-264AA

Stock4,928
IRF6619TR1
Infineon Technologies

MOSFET N-CH 20V 30A DIRECTFET

Package: DirectFET? Isometric MX

Stock16,548
SFT1445-TL-H
ON Semiconductor

MOSFET N-CH 100V 17A TP

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock61,248
FQD5N20LTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,684
STW65N65DM2AG
STMicroelectronics

MOSFET N-CH 650V 60A

Package: TO-247-3

Stock7,200
GPI65015DFN
GaNPower

GANFET N-CH 650V 15A DFN 8X8

Package: -

Request a Quote
HAT1038RJ-EL
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

Package: -

Request a Quote
IGOT60R070D1AUMA3
Infineon Technologies

GANFET N-CH

Package: -

Stock3,237
BSS138AKW-QX
Nexperia USA Inc.

MOS DISCRETES

Package: -

Stock8,940
IPB085N06L-G
Infineon Technologies

MOSFET N-CH 60V 80A TO-263

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRL540NLPBF	Infineon Technologies	MOSFET N-CH 100V 36A TO-262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 44 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock86,400	MOSFET (Metal Oxide)	100V	36A (Tc)	4V, 10V	2V @ 250µA	74nC @ 5V	1800pF @ 25V	±16V	-	3.8W (Ta), 140W (Tc)	44 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
IRL3715Z	Infineon Technologies	MOSFET N-CH 20V 50A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock399,084	MOSFET (Metal Oxide)	20V	50A (Tc)	4.5V, 10V	2.55V @ 250µA	11nC @ 4.5V	870pF @ 10V	±20V	-	45W (Tc)	11 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF3709	Infineon Technologies	MOSFET N-CH 30V 90A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2672pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock42,552	MOSFET (Metal Oxide)	30V	90A (Tc)	4.5V, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	±20V	-	3.1W (Ta), 120W (Tc)	9 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI4688DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 8.9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock453,528	MOSFET (Metal Oxide)	30V	8.9A (Ta)	4.5V, 10V	3V @ 250µA	38nC @ 10V	1580pF @ 15V	±20V	-	1.4W (Ta)	11 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
FQPF8N60CT	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7.5A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,328	MOSFET (Metal Oxide)	600V	7.5A (Tc)	10V	4V @ 250µA	36nC @ 10V	1255pF @ 25V	±30V	-	48W (Tc)	1.2 Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
SI1419DH-T1-E3	Vishay Siliconix	MOSFET P-CH 200V 0.3A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 400mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock6,800	MOSFET (Metal Oxide)	200V	300mA (Ta)	6V, 10V	4.5V @ 100µA	6.2nC @ 10V	-	±20V	-	1W (Ta)	5 Ohm @ 400mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SC-70-6 (SOT-363)	6-TSSOP, SC-88, SOT-363
HUFA75852G3	Fairchild/ON Semiconductor	MOSFET N-CH 150V 75A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 480nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 7690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: TO-247-3	Stock4,512	MOSFET (Metal Oxide)	150V	75A (Tc)	10V	4V @ 250µA	480nC @ 20V	7690pF @ 25V	±20V	-	500W (Tc)	16 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
STB100NH02LT4	STMicroelectronics	MOSFET N-CH 24V 60A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,900	MOSFET (Metal Oxide)	24V	60A (Tc)	5V, 10V	1.8V @ 250µA	64nC @ 10V	2850pF @ 15V	±20V	-	100W (Tc)	6 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTML10UM09R004T1AG	Microsemi Corporation	MOSFET N-CH 100V 154A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock3,216	MOSFET (Metal Oxide)	100V	154A (Tc)	10V	4V @ 2.5mA	-	9875pF @ 25V	±30V	-	480W (Tc)	10 mOhm @ 69.5A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
SUD50P04-09L-E3	Vishay Siliconix	MOSFET P-CH 40V 50A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock63,264	MOSFET (Metal Oxide)	40V	50A (Tc)	4.5V, 10V	3V @ 250µA	150nC @ 10V	4800pF @ 25V	±20V	-	3W (Ta), 136W (Tc)	9.4 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFK24N100F	IXYS	MOSFET N-CH 1KV 24A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 560W (Tc) Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock4,928	MOSFET (Metal Oxide)	1000V	24A (Tc)	10V	5.5V @ 8mA	195nC @ 10V	6600pF @ 25V	±20V	-	560W (Tc)	390 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXFK)	TO-264-3, TO-264AA
IRF6619TR1	Infineon Technologies	MOSFET N-CH 20V 30A DIRECTFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DIRECTFET? MX Package / Case: DirectFET? Isometric MX	Package: DirectFET? Isometric MX	Stock16,548	MOSFET (Metal Oxide)	20V	30A (Ta), 150A (Tc)	4.5V, 10V	2.45V @ 250µA	57nC @ 4.5V	5040pF @ 10V	±20V	-	2.8W (Ta), 89W (Tc)	2.2 mOhm @ 30A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	DIRECTFET? MX	DirectFET? Isometric MX
SFT1445-TL-H	ON Semiconductor	MOSFET N-CH 100V 17A TP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 111 mOhm @ 8.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TP-FA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock61,248	MOSFET (Metal Oxide)	100V	17A (Ta)	4V, 10V	2.6V @ 1mA	19nC @ 10V	1030pF @ 20V	±20V	-	1W (Ta), 35W (Tc)	111 mOhm @ 8.5A, 10V	150°C (TJ)	Surface Mount	TP-FA	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD5N20LTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,684	MOSFET (Metal Oxide)	200V	3.8A (Tc)	5V, 10V	2V @ 250µA	6.2nC @ 5V	325pF @ 25V	±20V	-	2.5W (Ta), 37W (Tc)	1.2 Ohm @ 1.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STW65N65DM2AG	STMicroelectronics	MOSFET N-CH 650V 60A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock7,200	MOSFET (Metal Oxide)	650V	60A (Tc)	10V	5V @ 250µA	120nC @ 10V	5500pF @ 100V	±25V	-	446W (Tc)	50 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
GPI65015DFN	GaNPower	GANFET N-CH 650V 15A DFN 8X8 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 15A Drive Voltage (Max Rds On, Min Rds On): 6V Vgs(th) (Max) @ Id: 1.2V @ 3.5mA Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 400 V Vgs (Max): +7.5V, -12V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	GaNFET (Gallium Nitride)	650 V	15A	6V	1.2V @ 3.5mA	3.3 nC @ 6 V	116 pF @ 400 V	+7.5V, -12V	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
HAT1038RJ-EL	Renesas Electronics Corporation	P-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IGOT60R070D1AUMA3	Infineon Technologies	GANFET N-CH FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Package: -	Stock3,237	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
BSS138AKW-QX	Nexperia USA Inc.	MOS DISCRETES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock8,940	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB085N06L-G	Infineon Technologies	MOSFET N-CH 60V 80A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 125µA Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	-	2V @ 125µA	104 nC @ 10 V	3500 pF @ 30 V	-	-	-	8.2mOhm @ 80A, 10V	-	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTMFS0D7N03CGT1G	onsemi	MOSFET N-CH 30V 59A/409A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 59A (Ta), 409A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 187W (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock3,234	MOSFET (Metal Oxide)	30 V	59A (Ta), 409A (Tc)	10V	2.2V @ 280µA	147 nC @ 10 V	12300 pF @ 15 V	±20V	-	4W (Ta), 187W (Tc)	0.65mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
BUK6D23-40EX	Nexperia USA Inc.	MOSFET N-CH 40V 8A/19A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020MD-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock35,301	MOSFET (Metal Oxide)	40 V	8A (Ta), 19A (Tc)	4.5V, 10V	2.7V @ 250µA	19 nC @ 10 V	582 pF @ 20 V	±20V	-	2.3W (Ta), 15W (Tc)	23mOhm @ 8A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN2020MD-6	6-UDFN Exposed Pad
SI0301-TP	Micro Commercial Co	N-CHANNEL MOSFET,SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 500mA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock12,540	MOSFET (Metal Oxide)	30 V	500mA	2.5V, 4.5V	1V @ 250µA	0.8 nC @ 4.5 V	54 pF @ 15 V	±8V	-	830mW	750mOhm @ 500mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
UF3C170400K3S	Qorvo	SICFET N-CH 1700V 7.6A TO247-3 FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock226,731	SiCFET (Cascode SiCJFET)	1700 V	7.6A (Tc)	12V	6V @ 10mA	27.5 nC @ 15 V	740 pF @ 100 V	±25V	-	100W (Tc)	515mOhm @ 5A, 12V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
NVBL099N65S3	onsemi	MOSFET N-CH 200V 9A DPAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI010N03PW	Diotec Semiconductor	MOSFET POWERQFN 2X2 N 30V 10A 0. FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (2x2) Package / Case: 8-PowerUDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	10A (Tc)	4.5V, 10V	2V @ 250µA	25 nC @ 10 V	1120 pF @ 15 V	±20V	-	1.4W (Tc)	12mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (2x2)	8-PowerUDFN
SSM6J825R-LF	Toshiba Semiconductor and Storage	P-CH MOSFET -30V, -20/+10V, -4A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-TSOP-F Package / Case: 6-SMD, Flat Leads	Package: -	Stock17,841	MOSFET (Metal Oxide)	30 V	4A (Ta)	4V, 10V	2V @ 250µA	6.2 nC @ 4.5 V	492 pF @ 10 V	+10V, -20V	-	1.5W (Ta)	45mOhm @ 4A, 10V	150°C	Surface Mount	6-TSOP-F	6-SMD, Flat Leads
FQD9N25TM-F085	onsemi	MOSFET N-CH 250V 7.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	7.4A (Tc)	10V	5V @ 250µA	20 nC @ 10 V	700 pF @ 25 V	±30V	-	2.5W (Ta), 55W (Tc)	420mOhm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63