Page 482 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

CSD25301W1015
Texas Instruments

MOSFET P-CH 20V 2.2A 6DSBGA

Package: 6-UFBGA, DSBGA

Stock301,104
FDB5800_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,880
BUK7628-55A,118
NXP

MOSFET N-CH 55V 42A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,016
RFG40N10
Fairchild/ON Semiconductor

MOSFET N-CH 100V 40A TO-247

Package: TO-247-3

Stock32,232
IRFBC20S
Vishay Siliconix

MOSFET N-CH 600V 2.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,944
IPB020N10N5LFATMA1
Infineon Technologies

MOSFET N-CH 100V D2PAK-3

Package: -

Stock6,080
BSZ0703LSATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: -

Stock2,576
NVD5C632NLT4G
ON Semiconductor

MOSFET N-CH 60V DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,816
AOTF12T60P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 12A TO220F

Package: TO-220-3 Full Pack

Stock3,088
IPB80N06S2H5ATMA2
Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,328
RW1E025RPT2CR
Rohm Semiconductor

MOSFET P-CH 30V 2.5A WEMT6

Package: SOT-563, SOT-666

Stock384,000
FCD850N80Z
Fairchild/ON Semiconductor

MOSFET N-CH 800V 6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,944
SI4866BDY-T1-E3
Vishay Siliconix

MOSFET N-CH 12V 21.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock713,412
SSM6K781G,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 12V 7A 6WCSP6C

Package: 6-UFBGA, WLCSP

Stock2,528
MCQ4406-TP
Micro Commercial Co

N-CHANNEL MOSFET, SOP-8 PACKAGE

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,632
SIHP30N60E-GE3
Vishay Siliconix

MOSFET N-CH 600V 29A TO220AB

Package: TO-220-3

Stock85,368
PHB33NQ20T,118
Nexperia USA Inc.

MOSFET N-CH 200V 32.7A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock13,056
NTD5867NLT4G
ON Semiconductor

MOSFET N-CH 60V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock722,364
RFP10P12
Harris Corporation

P-CHANNEL POWER MOSFET

Package: -

Request a Quote
SQ3481CEV-T1_GE3
Vishay Siliconix

MOSFET P-CHANNEL 30V 7.5A 6TSOP

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CSD25301W1015	Texas Instruments	MOSFET P-CH 20V 2.2A 6DSBGA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DSBGA (1x1.5) Package / Case: 6-UFBGA, DSBGA	Package: 6-UFBGA, DSBGA	Stock301,104	MOSFET (Metal Oxide)	20V	2.2A (Tc)	1.5V, 4.5V	1V @ 250µA	2.5nC @ 4.5V	270pF @ 10V	±8V	-	1.5W (Ta)	75 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DSBGA (1x1.5)	6-UFBGA, DSBGA
FDB5800_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6625pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 242W (Tc) Rds On (Max) @ Id, Vgs: 6 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,880	MOSFET (Metal Oxide)	60V	14A (Ta), 80A (Tc)	4.5V, 10V	2.5V @ 250µA	135nC @ 10V	6625pF @ 15V	±20V	-	242W (Tc)	6 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7628-55A,118	NXP	MOSFET N-CH 55V 42A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1165pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,016	MOSFET (Metal Oxide)	55V	42A (Tc)	10V	4V @ 1mA	-	1165pF @ 25V	±20V	-	99W (Tc)	28 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RFG40N10	Fairchild/ON Semiconductor	MOSFET N-CH 100V 40A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock32,232	MOSFET (Metal Oxide)	100V	40A (Tc)	10V	4V @ 250µA	300nC @ 20V	-	±20V	-	160W (Tc)	40 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247	TO-247-3
IRFBC20S	Vishay Siliconix	MOSFET N-CH 600V 2.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,944	MOSFET (Metal Oxide)	600V	2.2A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	3.1W (Ta), 50W (Tc)	4.4 Ohm @ 1.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB020N10N5LFATMA1	Infineon Technologies	MOSFET N-CH 100V D2PAK-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,080	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSZ0703LSATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock2,576	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVD5C632NLT4G	ON Semiconductor	MOSFET N-CH 60V DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 155A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,816	MOSFET (Metal Oxide)	60V	29A (Ta), 155A (Tc)	4.5V, 10V	2.1V @ 250µA	78nC @ 10V	5700pF @ 25V	±20V	-	4W (Ta), 115W (Tc)	2.5 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
AOTF12T60P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 12A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2028pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,088	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	5V @ 250µA	50nC @ 10V	2028pF @ 100V	±30V	-	50W (Tc)	520 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
IPB80N06S2H5ATMA2	Infineon Technologies	MOSFET N-CH 55V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,328	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 230µA	155nC @ 10V	4400pF @ 25V	±20V	-	300W (Tc)	5.2 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RW1E025RPT2CR	Rohm Semiconductor	MOSFET P-CH 30V 2.5A WEMT6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 75 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock384,000	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4V, 10V	2.5V @ 1mA	5.2nC @ 5V	480pF @ 10V	±20V	-	700mW (Ta)	75 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	6-WEMT	SOT-563, SOT-666
FCD850N80Z	Fairchild/ON Semiconductor	MOSFET N-CH 800V 6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 600µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1315pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,944	MOSFET (Metal Oxide)	800V	6A (Tc)	10V	4.5V @ 600µA	29nC @ 10V	1315pF @ 100V	±20V	-	75W (Tc)	850 mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SI4866BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 12V 21.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 21.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5020pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock713,412	MOSFET (Metal Oxide)	12V	21.5A (Tc)	1.8V, 4.5V	1V @ 250µA	80nC @ 4.5V	5020pF @ 6V	±8V	-	2.5W (Ta), 4.45W (Tc)	5.3 mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
SSM6K781G,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 12V 7A 6WCSP6C FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WCSPC (1.5x1.0) Package / Case: 6-UFBGA, WLCSP	Package: 6-UFBGA, WLCSP	Stock2,528	MOSFET (Metal Oxide)	12V	7A (Ta)	1.5V, 4.5V	1V @ 250µA	5.4nC @ 4.5V	600pF @ 6V	±8V	-	1.6W (Ta)	18 mOhm @ 1.5A, 4.5V	150°C (TJ)	Surface Mount	6-WCSPC (1.5x1.0)	6-UFBGA, WLCSP
MCQ4406-TP	Micro Commercial Co	N-CHANNEL MOSFET, SOP-8 PACKAGE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,632	MOSFET (Metal Oxide)	30V	10A	4.5V	3V @ 250µA	13nC @ 5V	1550pF @ 15V	±20V	-	1.4W	16 mOhm @ 10A, 4.5V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SIHP30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 125 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock85,368	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	4V @ 250µA	130nC @ 10V	2600pF @ 100V	±30V	-	250W (Tc)	125 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PHB33NQ20T,118	Nexperia USA Inc.	MOSFET N-CH 200V 32.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock13,056	MOSFET (Metal Oxide)	200V	32.7A (Tc)	10V	4V @ 1mA	32.2nC @ 10V	1870pF @ 25V	±20V	-	230W (Tc)	77 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTD5867NLT4G	ON Semiconductor	MOSFET N-CH 60V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock722,364	MOSFET (Metal Oxide)	60V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	15nC @ 10V	675pF @ 25V	±20V	-	36W (Tc)	39 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
RFP10P12	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	120 V	10A (Tc)	10V	4V @ 1mA	-	1700 pF @ 25 V	±20V	-	75W (Tc)	500mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
SQ3481CEV-T1_GE3	Vishay Siliconix	MOSFET P-CHANNEL 30V 7.5A 6TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 5.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7.5A (Tc)	4.5V, 10V	2.5V @ 250µA	23.5 nC @ 10 V	870 pF @ 15 V	±20V	-	4W (Tc)	43mOhm @ 5.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
RJK0358DSP-01-J0	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQW44N65EF-GE3	Vishay Siliconix	E SERIES POWER MOSFET WITH FAST FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5858 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD Package / Case: TO-247-3	Package: -	Stock1,422	MOSFET (Metal Oxide)	650 V	47A (Tc)	10V	4V @ 250µA	266 nC @ 10 V	5858 pF @ 100 V	±30V	-	500W (Tc)	73mOhm @ 22A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD	TO-247-3
ISL9N312AD3	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A (Tc)	4.5V, 10V	3V @ 250µA	38 nC @ 10 V	1450 pF @ 15 V	±20V	-	75W (Ta)	12mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
IPT65R125CFD7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-3 Package / Case: 8-PowerSFN	Package: -	Request a Quote	-	650 V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-3	8-PowerSFN
UPA2210T1M-T1-AT	Renesas Electronics Corporation	MOSFET P-CH 20V 7.2A 8VSOF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 7.2A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSOF Package / Case: 8-SMD, Flat Lead	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	7.2A (Ta)	-	1.5V @ 1mA	16.3 nC @ 4.5 V	1350 pF @ 10 V	-	-	1.1W (Ta)	29mOhm @ 7.2A, 4.5V	150°C (TJ)	Surface Mount	8-VSOF	8-SMD, Flat Lead
IPP80N07S405AKSA1	Infineon Technologies	MOSFET N-CH TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	80A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
SQJA04EP-T1_BE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock9,000	MOSFET (Metal Oxide)	60 V	75A (Tc)	10V	3.5V @ 250µA	55 nC @ 10 V	3500 pF @ 25 V	±20V	-	68W (Tc)	6.2mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRLZ34PBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 30A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 18A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock9,762	MOSFET (Metal Oxide)	60 V	30A (Tc)	-	2V @ 250µA	35 nC @ 5 V	1600 pF @ 25 V	±10V	-	88W (Tc)	50mOhm @ 18A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3