Page 485 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

SI4420DYTR
Infineon Technologies

MOSFET N-CH 30V 12.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock6,224
2SK4088LS-1E
ON Semiconductor

MOSFET N-CH 650V 11A

Package: TO-220-3 Full Pack

Stock5,136
ZXM62P03E6TC
Diodes Incorporated

MOSFET P-CH 30V 1.5A SOT23-6

Package: SOT-23-6

Stock3,232
NP110N04PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V MP-25ZP/TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,344
TPCC8005-H(TE12LQM
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 26A 8TSON

Package: 8-VDFN Exposed Pad

Stock4,256
IRFI9610G
Vishay Siliconix

MOSFET P-CH 200V 2A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock41,400
IRFBC40ASTRL
Vishay Siliconix

MOSFET N-CH 600V 6.2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,632
IRFIBC20G
Vishay Siliconix

MOSFET N-CH 600V 1.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock375,372
STU95N3LLH6
STMicroelectronics

MOSFET N-CH 30V 80A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,752
STP20NF06
STMicroelectronics

MOSFET N-CH 60V 20A TO-220

Package: TO-220-3

Stock216,132
IXTH24N50
IXYS

MOSFET N-CH 500V 24A TO-247

Package: TO-247-3

Stock7,664
IXTA5N50P
IXYS

MOSFET N-CH 500V 4.8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,104
CSD18503Q5AT
Texas Instruments

N-CHANNEL NEXFET POWER MOSFET

Package: 8-PowerTDFN

Stock6,096
TPC8066-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 11A 8SOP

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,424
DMP2005UFG-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V POWERDI3333

Package: 8-PowerVDFN

Stock2,544
DMN13H750S-13
Diodes Incorporated

MOSFET N-CH 130V 1A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,520
DMN2058U-13
Diodes Incorporated

MOSFET BVDSS: 8V 24V SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock3,120
SIRA88DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 30V 45.5A SO8

Package: PowerPAK? SO-8

Stock4,672
STL140N6F7
STMicroelectronics

MOSFET N-CH 60V 145A 8PWRFLAT

Package: 8-PowerSMD, Flat Leads

Stock7,536
DMN3730UFB-7
Diodes Incorporated

MOSFET N-CH 30V 750MA DFN

Package: 3-UFDFN

Stock2,336

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
SI4420DYTR	Infineon Technologies	MOSFET N-CH 30V 12.5A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock6,224	MOSFET (Metal Oxide)	30V	12.5A (Ta)	4.5V, 10V	1V @ 250µA	78nC @ 10V	2240pF @ 15V	±20V	-	2.5W (Ta)	9 mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
2SK4088LS-1E	ON Semiconductor	MOSFET N-CH 650V 11A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 30V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,136	MOSFET (Metal Oxide)	650V	7.5A (Tc)	10V	-	37.6nC @ 10V	1000pF @ 30V	±30V	-	2W (Ta), 37W (Tc)	850 mOhm @ 5.5A, 10V	150°C (TJ)	Through Hole	TO-220F-3FS	TO-220-3 Full Pack
ZXM62P03E6TC	Diodes Incorporated	MOSFET P-CH 30V 1.5A SOT23-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 230 mOhm @ 800mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-26 Package / Case: SOT-23-6	Package: SOT-23-6	Stock3,232	MOSFET (Metal Oxide)	30V	1.5A (Ta)	4.5V, 10V	1V @ 250µA	10.2nC @ 10V	330pF @ 25V	±20V	-	625mW (Ta)	230 mOhm @ 800mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-26	SOT-23-6
NP110N04PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V MP-25ZP/TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 288W (Tc) Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,344	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	390nC @ 10V	25700pF @ 25V	±20V	-	1.8W (Ta), 288W (Tc)	1.8 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPCC8005-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 26A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 13A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock4,256	MOSFET (Metal Oxide)	30V	26A (Ta)	4.5V, 10V	2.3V @ 500µA	35nC @ 10V	2900pF @ 10V	±20V	-	700mW (Ta), 30W (Tc)	6.4 mOhm @ 13A, 10V	150°C (TJ)	Surface Mount	8-TSON	8-VDFN Exposed Pad
IRFI9610G	Vishay Siliconix	MOSFET P-CH 200V 2A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock41,400	MOSFET (Metal Oxide)	200V	2A (Tc)	10V	4V @ 250µA	13nC @ 10V	180pF @ 25V	±20V	-	27W (Tc)	3 Ohm @ 1.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFBC40ASTRL	Vishay Siliconix	MOSFET N-CH 600V 6.2A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1036pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,632	MOSFET (Metal Oxide)	600V	6.2A (Tc)	10V	4V @ 250µA	42nC @ 10V	1036pF @ 25V	±30V	-	125W (Tc)	1.2 Ohm @ 3.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFIBC20G	Vishay Siliconix	MOSFET N-CH 600V 1.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock375,372	MOSFET (Metal Oxide)	600V	1.7A (Tc)	10V	4V @ 250µA	18nC @ 10V	350pF @ 25V	±20V	-	30W (Tc)	4.4 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
STU95N3LLH6	STMicroelectronics	MOSFET N-CH 30V 80A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 40A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,752	MOSFET (Metal Oxide)	30V	80A (Tc)	4.5V, 10V	2.5V @ 250µA	20nC @ 4.5V	2200pF @ 25V	±25V	-	70W (Tc)	4.7 mOhm @ 40A, 10V	175°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
STP20NF06	STMicroelectronics	MOSFET N-CH 60V 20A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 70 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock216,132	MOSFET (Metal Oxide)	60V	20A (Tc)	10V	4V @ 250µA	18nC @ 10V	400pF @ 25V	±20V	-	60W (Tc)	70 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTH24N50	IXYS	MOSFET N-CH 500V 24A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock7,664	MOSFET (Metal Oxide)	500V	24A (Tc)	10V	4V @ 250µA	190nC @ 10V	4200pF @ 25V	±20V	-	300W (Tc)	230 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
IXTA5N50P	IXYS	MOSFET N-CH 500V 4.8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (IXTA) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,104	MOSFET (Metal Oxide)	500V	4.8A (Tc)	10V	5.5V @ 50µA	12.6nC @ 10V	620pF @ 25V	±30V	-	89W (Tc)	1.4 Ohm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (IXTA)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CSD18503Q5AT	Texas Instruments	N-CHANNEL NEXFET POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2640pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 120W (Tc) Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,096	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2.3V @ 250µA	16nC @ 4.5V	2640pF @ 20V	±20V	-	3.1W (Ta), 120W (Tc)	4.3 mOhm @ 22A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-VSON (5x6)	8-PowerTDFN
TPC8066-H,LQ(S	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 11A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 16 mOhm @ 5.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,424	MOSFET (Metal Oxide)	30V	11A (Ta)	4.5V, 10V	2.3V @ 100µA	15nC @ 10V	1100pF @ 10V	±20V	-	1W (Ta)	16 mOhm @ 5.5A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
DMP2005UFG-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 10V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock2,544	MOSFET (Metal Oxide)	20V	89A (Tc)	1.8V, 4.5V	900mV @ 250µA	125nC @ 10V	4670pF @ 10V	±10V	-	2.2W (Ta)	4 mOhm @ 15A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
DMN13H750S-13	Diodes Incorporated	MOSFET N-CH 130V 1A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 130V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 231pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 750 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,520	MOSFET (Metal Oxide)	130V	1A (Ta)	6V, 10V	4V @ 250µA	5.6nC @ 10V	231pF @ 25V	±20V	-	770mW (Ta)	750 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
DMN2058U-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.13W Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock3,120	MOSFET (Metal Oxide)	20V	4.6A (Ta)	1.8V, 10V	1.2V @ 250µA	7.7nC @ 10V	281pF @ 10V	±12V	-	1.13W	35 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SIRA88DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 45.5A SO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 15V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,672	MOSFET (Metal Oxide)	30V	45.5A (Tc)	4.5V, 10V	2.4V @ 250µA	12.5nC @ 4.5V	985pF @ 15V	+20V, -16V	-	25W (Tc)	6.7 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STL140N6F7	STMicroelectronics	MOSFET N-CH 60V 145A 8PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.8W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 16A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (5x6) Package / Case: 8-PowerSMD, Flat Leads	Package: 8-PowerSMD, Flat Leads	Stock7,536	MOSFET (Metal Oxide)	60V	145A (Tc)	10V	4V @ 1mA	40nC @ 10V	2700pF @ 25V	±20V	-	4.8W (Ta), 125W (Tc)	2.5 mOhm @ 16A, 10V	175°C (TJ)	Surface Mount	PowerFlat? (5x6)	8-PowerSMD, Flat Leads
DMN3730UFB-7	Diodes Incorporated	MOSFET N-CH 30V 750MA DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 470mW (Ta) Rds On (Max) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock2,336	MOSFET (Metal Oxide)	30V	750mA (Ta)	1.8V, 4.5V	950mV @ 250µA	1.6nC @ 4.5V	64.3pF @ 25V	±8V	-	470mW (Ta)	460 mOhm @ 200mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN	3-UFDFN
BMS3004-1E	ON Semiconductor	MOSFET P-CH 75V 68A TO-220F-3SG FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 68A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 34A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3SG Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock7,944	MOSFET (Metal Oxide)	75V	68A (Ta)	4V, 10V	-	300nC @ 10V	13400pF @ 20V	±20V	-	2W (Ta), 40W (Tc)	8.5 mOhm @ 34A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3SG	TO-220-3 Full Pack
SI7848BDP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 47A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock60,420	MOSFET (Metal Oxide)	40V	47A (Tc)	4.5V, 10V	3V @ 250µA	50nC @ 10V	2000pF @ 20V	±20V	-	4.2W (Ta), 36W (Tc)	9 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
STP33N60DM6	STMicroelectronics	MOSFET N-CH 600V 25A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 12.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Stock3,000	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.75V @ 250µA	35 nC @ 10 V	1500 pF @ 100 V	±25V	-	190W (Tc)	128mOhm @ 12.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
IQE006NE2LM5CGATMA1	Infineon Technologies	MOSFET N-CH 25V 41A/298A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251AA) Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Stock14,625	MOSFET (Metal Oxide)	25 V	41A (Ta), 298A (Tc)	-	2V @ 250µA	82.1 nC @ 10 V	5453 pF @ 12 V	±16V	-	2.1W (Ta), 89W (Tc)	650mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK (TO-251AA)	TO-251-3 Short Leads, IPAK, TO-251AA
XP232N03013R-G	Torex Semiconductor Ltd	MOSFET N-CH 30V 300MA SOT323-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323-3A Package / Case: SC-70, SOT-323	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	300mA (Ta)	4.5V, 10V	2.5V @ 250µA	0.36 nC @ 10 V	22 pF @ 10 V	±20V	-	350mW (Ta)	2Ohm @ 100mA, 10V	150°C (TJ)	Surface Mount	SOT-323-3A	SC-70, SOT-323
R6509KND3TL1	Rohm Semiconductor	HIGH-SPEED SWITCHING, NCH 650V 9 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,470	MOSFET (Metal Oxide)	650 V	9A (Tc)	10V	5V @ 230µA	16.5 nC @ 10 V	540 pF @ 25 V	±20V	-	94W (Tc)	585mOhm @ 2.8A, 10V	150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
UPA2706GR-E1-AT	Renesas	UPA2706GR-E1-AT - MOS FIELD EFFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 15W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.173", 4.40mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta), 20A (Tc)	4V, 10V	2.5V @ 1mA	7.1 nC @ 5 V	660 pF @ 10 V	±20V	-	3W (Ta), 15W (Tc)	15mOhm @ 5.5A, 10V	150°C	Surface Mount	8-SOP	8-SOIC (0.173", 4.40mm Width)
IRFZ24PBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 17A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock534	MOSFET (Metal Oxide)	60 V	17A (Tc)	-	4V @ 250µA	25 nC @ 10 V	640 pF @ 25 V	±20V	-	60W (Tc)	100mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3