Page 487 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSO220N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 7A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,616
SPD02N60S5BTMA1
Infineon Technologies

MOSFET N-CH 600V 1.8A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,072
BSS223PW L6327
Infineon Technologies

MOSFET P-CH 20V 390MA SOT-323

Package: SC-70, SOT-323

Stock122,940
SI7344DP-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 11A PPAK SO-8

Package: PowerPAK? SO-8

Stock35,652
NTJS3157NT4
ON Semiconductor

MOSFET N-CH 20V 3.2A SOT-363

Package: 6-TSSOP, SC-88, SOT-363

Stock7,152
FQB2P40TM
Fairchild/ON Semiconductor

MOSFET P-CH 400V 2A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,176
IRFR9010
Vishay Siliconix

MOSFET P-CH 50V 5.3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock54,300
IPC60R520E6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

Package: -

Stock7,328
APTM120U10SCAVG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

Package: SP6

Stock3,312
AOTF4N90
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 900V 4A TO220F

Package: TO-220-3 Full Pack

Stock3,792
AO4496
Alpha & Omega Semiconductor Inc.

MOSFET N CH 30V 10A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock620,172
STP9NM60N
STMicroelectronics

MOSFET N-CH 600V 6.5A TO-220

Package: TO-220-3

Stock36,600
IXTX32P60P
IXYS

MOSFET P-CH 600V 32A PLUS247

Package: TO-247-3

Stock6,204
AOT260L
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 140A TO220

Package: TO-220-3

Stock402,180
SUM70040M-GE3
Vishay Siliconix

MOSFET N-CH 100V 120A D2PAK

Package: TO-263-7, D2Pak (6 Leads + Tab)

Stock3,840
RS1G300GNTB
Rohm Semiconductor

MOSFET N-CH 40V 30A 8HSOP

Package: 8-PowerTDFN

Stock6,688
BS170_D27Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 500MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock111,228
SI4431BDY-T1-E3
Vishay Siliconix

MOSFET P-CH 30V 5.7A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,149,840
NTMYS3D3N06CLTWG
onsemi

MOSFET N-CH 60V 26A/133A LFPAK4

Package: -

Stock6,045
AOTL66515
Alpha & Omega Semiconductor Inc.

N

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSO220N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 7A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 8.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,616	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2.1V @ 250µA	10.4nC @ 10V	800pF @ 15V	±20V	-	1.56W (Ta)	22 mOhm @ 8.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
SPD02N60S5BTMA1	Infineon Technologies	MOSFET N-CH 600V 1.8A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,072	MOSFET (Metal Oxide)	600V	1.8A (Tc)	10V	5.5V @ 80µA	9.5nC @ 10V	240pF @ 25V	±20V	-	25W (Tc)	3 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
BSS223PW L6327	Infineon Technologies	MOSFET P-CH 20V 390MA SOT-323 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 1.5µA Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	Package: SC-70, SOT-323	Stock122,940	MOSFET (Metal Oxide)	20V	390mA (Ta)	2.5V, 4.5V	1.2V @ 1.5µA	0.62nC @ 4.5V	56pF @ 15V	±12V	-	250mW (Ta)	1.2 Ohm @ 390mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT323-3	SC-70, SOT-323
SI7344DP-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 11A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock35,652	MOSFET (Metal Oxide)	20V	11A (Ta)	4.5V, 10V	2.1V @ 250µA	15nC @ 4.5V	-	±20V	-	1.8W (Ta)	8 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NTJS3157NT4	ON Semiconductor	MOSFET N-CH 20V 3.2A SOT-363 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 400mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-88/SC70-6/SOT-363 Package / Case: 6-TSSOP, SC-88, SOT-363	Package: 6-TSSOP, SC-88, SOT-363	Stock7,152	MOSFET (Metal Oxide)	20V	3.2A (Ta)	1.8V, 4.5V	400mV @ 250µA	15nC @ 4.5V	500pF @ 10V	±8V	-	1W (Ta)	60 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-88/SC70-6/SOT-363	6-TSSOP, SC-88, SOT-363
FQB2P40TM	Fairchild/ON Semiconductor	MOSFET P-CH 400V 2A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 6.5 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,176	MOSFET (Metal Oxide)	400V	2A (Tc)	10V	5V @ 250µA	13nC @ 10V	350pF @ 25V	±30V	-	3.13W (Ta), 63W (Tc)	6.5 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFR9010	Vishay Siliconix	MOSFET P-CH 50V 5.3A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock54,300	MOSFET (Metal Oxide)	50V	5.3A (Tc)	10V	4V @ 250µA	9.1nC @ 10V	240pF @ 25V	±20V	-	25W (Tc)	500 mOhm @ 2.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPC60R520E6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,328	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APTM120U10SCAVG	Microsemi Corporation	MOSFET N-CH 1200V 116A SP6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 116A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3290W (Tc) Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	Package: SP6	Stock3,312	MOSFET (Metal Oxide)	1200V	116A	10V	5V @ 20mA	1100nC @ 10V	28900pF @ 25V	±30V	-	3290W (Tc)	120 mOhm @ 58A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP6	SP6
AOTF4N90	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 900V 4A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 37W (Tc) Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,792	MOSFET (Metal Oxide)	900V	4A (Tc)	10V	4.5V @ 250µA	22nC @ 10V	880pF @ 25V	±30V	-	37W (Tc)	3.6 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
AO4496	Alpha & Omega Semiconductor Inc.	MOSFET N CH 30V 10A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock620,172	MOSFET (Metal Oxide)	30V	10A (Ta)	4.5V, 10V	2.5V @ 250µA	13nC @ 10V	715pF @ 15V	±20V	-	3.1W (Ta)	19.5 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STP9NM60N	STMicroelectronics	MOSFET N-CH 600V 6.5A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 452pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 745 mOhm @ 3.25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock36,600	MOSFET (Metal Oxide)	600V	6.5A (Tc)	10V	4V @ 250µA	17.4nC @ 10V	452pF @ 50V	±25V	-	70W (Tc)	745 mOhm @ 3.25A, 10V	150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXTX32P60P	IXYS	MOSFET P-CH 600V 32A PLUS247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 196nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 890W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,204	MOSFET (Metal Oxide)	600V	32A (Tc)	10V	4V @ 1mA	196nC @ 10V	11100pF @ 25V	±20V	-	890W (Tc)	350 mOhm @ 16A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
AOT260L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 60V 140A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14200pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 330W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock402,180	MOSFET (Metal Oxide)	60V	20A (Ta), 140A (Tc)	6V, 10V	3.2V @ 250µA	180nC @ 10V	14200pF @ 30V	±20V	-	1.9W (Ta), 330W (Tc)	2.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
SUM70040M-GE3	Vishay Siliconix	MOSFET N-CH 100V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2Pak (6 Leads + Tab)	Package: TO-263-7, D2Pak (6 Leads + Tab)	Stock3,840	MOSFET (Metal Oxide)	100V	120A (Tc)	7.5V, 10V	4V @ 250µA	120nC @ 10V	5100pF @ 50V	±20V	-	375W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2Pak (6 Leads + Tab)
RS1G300GNTB	Rohm Semiconductor	MOSFET N-CH 40V 30A 8HSOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 30A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSOP Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,688	MOSFET (Metal Oxide)	40V	30A (Ta)	4.5V, 10V	2.5V @ 1mA	56.8nC @ 10V	4230pF @ 20V	±20V	-	3W (Ta), 35W (Tc)	2.5 mOhm @ 30A, 10V	150°C (TJ)	Surface Mount	8-HSOP	8-PowerTDFN
BS170_D27Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 500MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta) Rds On (Max) @ Id, Vgs: 5 Ohm @ 200mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock111,228	MOSFET (Metal Oxide)	60V	500mA (Ta)	10V	3V @ 1mA	-	40pF @ 10V	±20V	-	830mW (Ta)	5 Ohm @ 200mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
SI4431BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 5.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,149,840	MOSFET (Metal Oxide)	30V	5.7A (Ta)	4.5V, 10V	3V @ 250µA	20nC @ 5V	-	±20V	-	1.5W (Ta)	30 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
NTMYS3D3N06CLTWG	onsemi	MOSFET N-CH 60V 26A/133A LFPAK4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock6,045	MOSFET (Metal Oxide)	60 V	26A (Ta), 133A (Tc)	4.5V, 10V	2V @ 250µA	40.7 nC @ 10 V	2880 pF @ 25 V	±20V	-	3.9W (Ta), 100W (Tc)	3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
AOTL66515	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16700 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 10W (Ta), 428W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLLA Package / Case: 8-PowerSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	30A (Ta), 200A (Tc)	6V, 10V	3V @ 250µA	270 nC @ 10 V	16700 pF @ 75 V	±20V	-	10W (Ta), 428W (Tc)	3.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TOLLA	8-PowerSFN
SI3443CDV-T1-BE3	Vishay Siliconix	P-CHANNEL 20-V (D-S) MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 5.97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.2W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.7A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: -	Stock24,003	MOSFET (Metal Oxide)	20 V	4.7A (Ta), 5.97A (Tc)	2.5V, 4.5V	1.5V @ 250µA	12.4 nC @ 5 V	610 pF @ 10 V	±12V	-	2W (Ta), 3.2W (Tc)	60mOhm @ 4.7A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
NTMFS0D9N04XMT1G	onsemi	40V T10M IN S08FL PACKAGE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 273A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 121W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	48A (Ta), 273A (Tc)	10V	3.5V @ 150µA	61 nC @ 10 V	3918 pF @ 20 V	±20V	-	121W (Tc)	0.9mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRFP246	Harris Corporation	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 275 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	275 V	15A (Tc)	10V	4V @ 250µA	59 nC @ 10 V	1300 pF @ 25 V	±20V	-	150W (Tc)	280mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
HAT2202C-EL-E	Renesas	HAT2202C-EL-E - SILICON N CHANNE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 200mW Rds On (Max) @ Id, Vgs: 40mOhm @ 1.5A, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 6-CMFPAK Package / Case: 6-SMD, Flat Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3A (Ta)	2.5V, 4.5V	1.4V @ 1mA	6 nC @ 4.5 V	520 pF @ 10 V	±12V	-	200mW	40mOhm @ 1.5A, 4.5V	150°C	Surface Mount	6-CMFPAK	6-SMD, Flat Leads
DMN65D8LT-13	Diodes Incorporated	MOSFET BVDSS: 41V~60V SOT523 T&R FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 115mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock30,000	MOSFET (Metal Oxide)	60 V	210mA (Ta)	5V, 10V	2V @ 250µA	0.4 nC @ 4.5 V	24 pF @ 25 V	±20V	-	300mW (Ta)	5Ohm @ 115mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
NP20P06YLG-E1-AY	Renesas Electronics Corporation	MOSFET P-CH 60V 20A 8HSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2407 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 47mOhm @ 10A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-HSON (5x5.4) Package / Case: 8-PowerLDFN	Package: -	Stock14,823	MOSFET (Metal Oxide)	60 V	20A (Tc)	4.5V, 10V	2.5V @ 250µA	51 nC @ 10 V	2407 pF @ 25 V	±20V	-	1W (Ta), 57W (Tc)	47mOhm @ 10A, 10V	175°C	Surface Mount	8-HSON (5x5.4)	8-PowerLDFN
AOSP62530	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	5A (Ta)	4.5V, 10V	2.7V @ 250µA	20 nC @ 10 V	675 pF @ 75 V	±20V	-	3.1W (Ta)	63mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
2SJ646-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-