Page 486 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFS4010-7PPBF
Infineon Technologies

MOSFET N-CH 100V 190A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock9,600
GP2M004A065CG
Global Power Technologies Group

MOSFET N-CH 650V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,664
NP109N04PUG-E1-AY
Renesas Electronics America

MOSFET N-CH 40V 110A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,272
FDMS8660AS
Fairchild/ON Semiconductor

MOSFET N-CH 30V 28A POWER56

Package: 8-PowerTDFN

Stock190,032
PHP225NQ04T,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock3,008
ZVN2106ASTOB
Diodes Incorporated

MOSFET N-CH 60V 0.45A TO92-3

Package: E-Line-3

Stock2,784
FDH50N50
Fairchild/ON Semiconductor

MOSFET N-CH 500V 48A TO-247

Package: TO-247-3

Stock159,864
BUK953R2-40B,127
Nexperia USA Inc.

MOSFET N-CH 40V 100A TO220AB

Package: TO-220-3

Stock6,432
DMP6050SFG-7
Diodes Incorporated

MOSFET P-CH 60V 4.8A

Package: 8-PowerWDFN

Stock5,424
SIR410DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 20V 35A PPAK SO-8

Package: PowerPAK? SO-8

Stock8,052
AOT416
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 42A TO-220

Package: TO-220-3

Stock38,004
BSZ0506NSATMA1
Infineon Technologies

MOSFET N-CH 30V 15A 8TSDSON

Package: 8-PowerTDFN

Stock6,368
STD4N62K3
STMicroelectronics

MOSFET N-CH 620V 3.8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock72,408
FQD12N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock39,492
SI7415DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 60V 3.6A 1212-8

Package: PowerPAK? 1212-8

Stock173,616
BSZ035N03MS G
Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

Package: 8-PowerTDFN

Stock164,616
SUD50N03-09P-E3
Vishay Siliconix

MOSFET N-CH 30V 63A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock18,096
2SK3902-0-ZK-E1-AY
Renesas Electronics Corporation

TRANSISTOR

Package: -

Request a Quote
SI2300DS-T1-GE3-ML
MOSLEADER

N 30V 3.6A SOT-23

Package: -

Request a Quote
GSFP0356
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 55A, 30V,

Package: -

Stock26,685

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFS4010-7PPBF	Infineon Technologies	MOSFET N-CH 100V 190A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9830pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 110A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock9,600	MOSFET (Metal Oxide)	100V	190A (Tc)	10V	4V @ 250µA	230nC @ 10V	9830pF @ 50V	±20V	-	380W (Tc)	4 mOhm @ 110A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
GP2M004A065CG	Global Power Technologies Group	MOSFET N-CH 650V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 98.4W (Tc) Rds On (Max) @ Id, Vgs: 2.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,664	MOSFET (Metal Oxide)	650V	4A (Tc)	10V	5V @ 250µA	15nC @ 10V	642pF @ 25V	±30V	-	98.4W (Tc)	2.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
NP109N04PUG-E1-AY	Renesas Electronics America	MOSFET N-CH 40V 110A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15750pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 55A, 10V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-3 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,272	MOSFET (Metal Oxide)	40V	110A (Tc)	10V	4V @ 250µA	270nC @ 10V	15750pF @ 25V	±20V	-	1.8W (Ta), 220W (Tc)	2.3 mOhm @ 55A, 10V	175°C (TJ)	Surface Mount	TO-263-3	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDMS8660AS	Fairchild/ON Semiconductor	MOSFET N-CH 30V 28A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5865pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock190,032	MOSFET (Metal Oxide)	30V	28A (Ta), 49A (Tc)	4.5V, 10V	3V @ 1mA	83nC @ 10V	5865pF @ 15V	±20V	-	2.5W (Ta), 104W (Tc)	2.1 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
PHP225NQ04T,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock3,008	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	94nC @ 10V	5100pF @ 25V	±20V	-	300W (Tc)	3.1 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVN2106ASTOB	Diodes Incorporated	MOSFET N-CH 60V 0.45A TO92-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: E-Line (TO-92 compatible) Package / Case: E-Line-3	Package: E-Line-3	Stock2,784	MOSFET (Metal Oxide)	60V	450mA (Ta)	10V	2.4V @ 1mA	-	75pF @ 18V	±20V	-	700mW (Ta)	2 Ohm @ 1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	E-Line (TO-92 compatible)	E-Line-3
FDH50N50	Fairchild/ON Semiconductor	MOSFET N-CH 500V 48A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 105 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock159,864	MOSFET (Metal Oxide)	500V	48A (Tc)	10V	5V @ 250µA	137nC @ 10V	6460pF @ 25V	±30V	-	625W (Tc)	105 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
BUK953R2-40B,127	Nexperia USA Inc.	MOSFET N-CH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,432	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2V @ 1mA	94nC @ 5V	10502pF @ 25V	±15V	-	300W (Tc)	2.8 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMP6050SFG-7	Diodes Incorporated	MOSFET P-CH 60V 4.8A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1293pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock5,424	MOSFET (Metal Oxide)	60V	4.8A (Ta)	4.5V, 10V	3V @ 250µA	24nC @ 10V	1293pF @ 30V	±20V	-	1.1W (Ta)	50 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
SIR410DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 35A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4.2W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock8,052	MOSFET (Metal Oxide)	20V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	41nC @ 10V	1600pF @ 10V	±20V	-	4.2W (Ta), 36W (Tc)	4.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
AOT416	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 42A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.92W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 37 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock38,004	MOSFET (Metal Oxide)	100V	4.7A (Ta), 42A (Tc)	7V, 10V	4V @ 250µA	23nC @ 10V	1450pF @ 50V	±25V	-	1.92W (Ta), 150W (Tc)	37 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220	TO-220-3
BSZ0506NSATMA1	Infineon Technologies	MOSFET N-CH 30V 15A 8TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 27W (Tc) Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,368	MOSFET (Metal Oxide)	30V	15A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	15nC @ 10V	950pF @ 15V	±20V	-	2.1W (Ta), 27W (Tc)	4.4 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
STD4N62K3	STMicroelectronics	MOSFET N-CH 620V 3.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 620V Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 1.95 Ohm @ 1.9A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock72,408	MOSFET (Metal Oxide)	620V	3.8A (Tc)	10V	4.5V @ 50µA	14nC @ 10V	450pF @ 50V	±30V	-	70W (Tc)	1.95 Ohm @ 1.9A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD12N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 280 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock39,492	MOSFET (Metal Oxide)	200V	9A (Tc)	10V	5V @ 250µA	23nC @ 10V	910pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	280 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI7415DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 60V 3.6A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock173,616	MOSFET (Metal Oxide)	60V	3.6A (Ta)	4.5V, 10V	3V @ 250µA	25nC @ 10V	-	±20V	-	1.5W (Ta)	65 mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
BSZ035N03MS G	Infineon Technologies	MOSFET N-CH 30V 40A TSDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock164,616	MOSFET (Metal Oxide)	30V	18A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	74nC @ 10V	5700pF @ 15V	±20V	-	2.1W (Ta), 69W (Tc)	3.5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8	8-PowerTDFN
SUD50N03-09P-E3	Vishay Siliconix	MOSFET N-CH 30V 63A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.5W (Ta), 65.2W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock18,096	MOSFET (Metal Oxide)	30V	63A (Tc)	4.5V, 10V	3V @ 250µA	16nC @ 4.5V	2200pF @ 25V	±20V	-	7.5W (Ta), 65.2W (Tc)	9.5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
2SK3902-0-ZK-E1-AY	Renesas Electronics Corporation	TRANSISTOR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	30A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
SI2300DS-T1-GE3-ML	MOSLEADER	N 30V 3.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GSFP0356	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 55A, 30V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (5.2x5.55) Package / Case: 8-PowerVDFN	Package: -	Stock26,685	MOSFET (Metal Oxide)	30 V	55A (Tc)	4.5V, 10V	2.5V @ 250µA	23 nC @ 10 V	1350 pF @ 15 V	±20V	-	47W (Tc)	7.9mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (5.2x5.55)	8-PowerVDFN
IXTP150N15X4	IXYS	MOSFET N-CH 150V 150A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	150 V	150A (Tc)	10V	4.5V @ 250µA	105 nC @ 10 V	5500 pF @ 25 V	±20V	-	480W (Tc)	7.2mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
ISL9N7030BLS3ST	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263AB Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	75A (Tc)	4.5V, 10V	3V @ 250µA	68 nC @ 10 V	2600 pF @ 15 V	±20V	-	100W (Tc)	9mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPT60R105CFD7XTMA1	Infineon Technologies	MOSFET N-CH 600V 24A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	Package: -	Stock5,190	MOSFET (Metal Oxide)	600 V	24A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	140W (Tc)	105mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
ISP20EP10LMXTSA1	Infineon Technologies	SMALL SIGNAL MOSFETS PG-SOT223-4 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 990mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 78µA Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4 Package / Case: TO-261-4, TO-261AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	650mA (Ta), 990mA (Tc)	4.5V, 10V	2V @ 78µA	3.5 nC @ 10 V	170 pF @ 50 V	±20V	-	1.8W (Ta), 4.2W (Tc)	2Ohm @ 600mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4	TO-261-4, TO-261AA
GSF0500AT	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 360MA, 50V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	Package: -	Stock17,895	MOSFET (Metal Oxide)	50 V	360mA (Ta)	2.5V, 10V	1.5V @ 250µA	4.7 nC @ 10 V	27 pF @ 25 V	±20V	-	150mW (Ta)	1.6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
IPB108N15N3GATMA1	Infineon Technologies	MOSFET N-CH 150V 83A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 10.8mOhm @ 83A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock10,638	MOSFET (Metal Oxide)	150 V	83A (Tc)	8V, 10V	4V @ 160µA	55 nC @ 10 V	3230 pF @ 75 V	±20V	-	214W (Tc)	10.8mOhm @ 83A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TSM70N380CP	Taiwan Semiconductor Corporation	700V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	700 V	11A (Tc)	10V	4V @ 250µA	18.8 nC @ 10 V	981 pF @ 100 V	±30V	-	125W (Tc)	380mOhm @ 3.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SI2300-TP	Micro Commercial Co	MOSFET N-CH 20V 4.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 482 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 1W Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock27,249	MOSFET (Metal Oxide)	20 V	4.5A (Tj)	2.5V, 4.5V	900mV @ 250µA	4.2 nC @ 4.5 V	482 pF @ 10 V	±10V	-	1W	25mOhm @ 4.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3