Page 580 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

CPH6354-TL-H
ON Semiconductor

MOSFET P-CH 60V 4A CPH6

Package: SOT-23-6 Thin, TSOT-23-6

Stock4,480
JANTXV2N6764
Microsemi Corporation

MOSFET N-CH 100V 38A

Package: TO-204AE

Stock2,448
SI8467DB-T2-E1
Vishay Siliconix

MOSFET P-CH 20V MICROFOOT

Package: 4-XFBGA, CSPBGA

Stock2,272
FDS7088SN3
Fairchild/ON Semiconductor

MOSFET N-CH 30V 21A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock173,136
AUIRFP4409
Infineon Technologies

MOSFET N-CH 300V 38A TO-247AC

Package: TO-247-3

Stock109,572
IPB70N10SL16ATMA1
Infineon Technologies

MOSFET N-CH 100V 70A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,752
SPP07N60C3XKSA1
Infineon Technologies

MOSFET N-CH 650V 7.3A TO-220AB

Package: TO-220-3

Stock7,168
IXFL38N100P
IXYS

MOSFET N-CH 1000V 29A I5-PAK

Package: ISOPLUSi5-Pak?

Stock7,904
NVMFS5C604NLWFAFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,904
AOTF20C60P
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-220-3 Full Pack

Stock8,916
TN5325K1-G
Microchip Technology

MOSFET N-CH 250V SOT23-3

Package: TO-236-3, SC-59, SOT-23-3

Stock77,280
AON4407
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 12V 9A 8DFN

Package: 8-SMD, Flat Lead

Stock114,576
TSM70N600CP ROG
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,392
IRFPS40N50LPBF
Vishay Siliconix

MOSFET N-CH 500V 46A SUPER247

Package: TO-274AA

Stock7,216
STF16N60M2
STMicroelectronics

MOSFET N-CH 600V 12A TO-220FP

Package: TO-220-3 Full Pack

Stock16,608
STL36N55M5
STMicroelectronics

MOSFET N-CH 550V 22.5A 4PWRFLAT

Package: 4-PowerFlat? HV

Stock6,624
SI4465ADY-T1-E3
Vishay Siliconix

MOSFET P-CH 8V 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock693,120
DMP6023LSS-13
Diodes Incorporated

MOSFET P-CH 60V 6.6A 8-SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock92,496
98-0193
Infineon Technologies

IC MOSFET HS PWR SW 35A D2PAK

Package: -

Request a Quote
NVB110N65S3F
onsemi

MOSFET N-CH 650V 30A D2PAK-3

Package: -

Stock4,710

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CPH6354-TL-H	ON Semiconductor	MOSFET P-CH 60V 4A CPH6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-CPH Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock4,480	MOSFET (Metal Oxide)	60V	4A (Ta)	4V, 10V	-	14nC @ 10V	600pF @ 20V	±20V	-	1.6W (Ta)	100 mOhm @ 2A, 10V	150°C (TJ)	Surface Mount	6-CPH	SOT-23-6 Thin, TSOT-23-6
JANTXV2N6764	Microsemi Corporation	MOSFET N-CH 100V 38A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3 Package / Case: TO-204AE	Package: TO-204AE	Stock2,448	MOSFET (Metal Oxide)	100V	38A (Tc)	10V	4V @ 250µA	125nC @ 10V	-	±20V	-	4W (Ta), 150W (Tc)	65 mOhm @ 38A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3	TO-204AE
SI8467DB-T2-E1	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 780mW (Ta), 1.8W (Tc) Rds On (Max) @ Id, Vgs: 73 mOhm @ 1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-Microfoot Package / Case: 4-XFBGA, CSPBGA	Package: 4-XFBGA, CSPBGA	Stock2,272	MOSFET (Metal Oxide)	20V	-	2.5V, 4.5V	1.5V @ 250µA	21nC @ 10V	475pF @ 10V	±12V	-	780mW (Ta), 1.8W (Tc)	73 mOhm @ 1A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	4-Microfoot	4-XFBGA, CSPBGA
FDS7088SN3	Fairchild/ON Semiconductor	MOSFET N-CH 30V 21A 8SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta) Rds On (Max) @ Id, Vgs: 4 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock173,136	MOSFET (Metal Oxide)	30V	21A (Ta)	4.5V, 10V	3V @ 1mA	80nC @ 10V	3230pF @ 15V	±20V	-	3W (Ta)	4 mOhm @ 21A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AUIRFP4409	Infineon Technologies	MOSFET N-CH 300V 38A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5168pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 341W (Tc) Rds On (Max) @ Id, Vgs: 69 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock109,572	MOSFET (Metal Oxide)	300V	38A (Tc)	10V	5V @ 250µA	125nC @ 10V	5168pF @ 50V	±20V	-	341W (Tc)	69 mOhm @ 24A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPB70N10SL16ATMA1	Infineon Technologies	MOSFET N-CH 100V 70A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,752	MOSFET (Metal Oxide)	100V	70A (Tc)	4.5V, 10V	2V @ 2mA	240nC @ 10V	4540pF @ 25V	±20V	-	250W (Tc)	16 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPP07N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 7.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock7,168	MOSFET (Metal Oxide)	650V	7.3A (Tc)	10V	3.9V @ 350µA	27nC @ 10V	790pF @ 25V	±20V	-	83W (Tc)	600 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IXFL38N100P	IXYS	MOSFET N-CH 1000V 29A I5-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 230 mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak? Package / Case: ISOPLUSi5-Pak?	Package: ISOPLUSi5-Pak?	Stock7,904	MOSFET (Metal Oxide)	1000V	29A (Tc)	10V	6.5V @ 1mA	350nC @ 10V	24000pF @ 25V	±30V	-	520W (Tc)	230 mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUSi5-Pak?	ISOPLUSi5-Pak?
NVMFS5C604NLWFAFT3G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,904	MOSFET (Metal Oxide)	60V	287A (Tc)	4.5V, 10V	2V @ 250µA	52nC @ 4.5V	8900pF @ 25V	±20V	-	200W (Tc)	1.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
AOTF20C60P	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3607pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 250 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock8,916	MOSFET (Metal Oxide)	600V	20A (Tc)	10V	5V @ 250µA	80nC @ 10V	3607pF @ 100V	±30V	-	50W (Tc)	250 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
TN5325K1-G	Microchip Technology	MOSFET N-CH 250V SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: TO-236AB (SOT23) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock77,280	MOSFET (Metal Oxide)	250V	150mA (Ta)	4.5V, 10V	2V @ 1mA	-	110pF @ 25V	±20V	-	360mW (Ta)	7 Ohm @ 1A, 10V	-	Surface Mount	TO-236AB (SOT23)	TO-236-3, SC-59, SOT-23-3
AON4407	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 12V 9A 8DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (3x2) Package / Case: 8-SMD, Flat Lead	Package: 8-SMD, Flat Lead	Stock114,576	MOSFET (Metal Oxide)	12V	9A (Ta)	1.5V, 4.5V	850mV @ 250µA	23nC @ 4.5V	2100pF @ 6V	±8V	-	2.5W (Ta)	20 mOhm @ 9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN (3x2)	8-SMD, Flat Lead
TSM70N600CP ROG	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 743pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,392	MOSFET (Metal Oxide)	700V	8A (Tc)	10V	4V @ 250µA	12.6nC @ 10V	743pF @ 100V	±30V	-	83W (Tc)	600 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFPS40N50LPBF	Vishay Siliconix	MOSFET N-CH 500V 46A SUPER247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-247 (TO-274AA) Package / Case: TO-274AA	Package: TO-274AA	Stock7,216	MOSFET (Metal Oxide)	500V	46A (Tc)	10V	5V @ 250µA	380nC @ 10V	8110pF @ 25V	±30V	-	540W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
STF16N60M2	STMicroelectronics	MOSFET N-CH 600V 12A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock16,608	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	700pF @ 100V	±25V	-	25W (Tc)	320 mOhm @ 6A, 10V	150°C (TJ)	Through Hole	TO-220FP	TO-220-3 Full Pack
STL36N55M5	STMicroelectronics	MOSFET N-CH 550V 22.5A 4PWRFLAT FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 100V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 90 mOhm @ 16.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerFlat? (8x8) HV Package / Case: 4-PowerFlat? HV	Package: 4-PowerFlat? HV	Stock6,624	MOSFET (Metal Oxide)	550V	22.5A (Tc)	10V	5V @ 250µA	62nC @ 10V	2670pF @ 100V	±25V	-	2.8W (Ta), 150W (Tc)	90 mOhm @ 16.5A, 10V	150°C (TJ)	Surface Mount	PowerFlat? (8x8) HV	4-PowerFlat? HV
SI4465ADY-T1-E3	Vishay Siliconix	MOSFET P-CH 8V 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3W (Ta), 6.5W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 14A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock693,120	MOSFET (Metal Oxide)	8V	-	1.8V, 4.5V	1V @ 250µA	85nC @ 4.5V	-	±8V	-	3W (Ta), 6.5W (Tc)	9 mOhm @ 14A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
DMP6023LSS-13	Diodes Incorporated	MOSFET P-CH 60V 6.6A 8-SO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 25 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock92,496	MOSFET (Metal Oxide)	60V	6.6A (Ta)	4.5V, 10V	3V @ 250µA	53.1nC @ 10V	2569pF @ 30V	±20V	-	1.2W (Ta)	25 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
98-0193	Infineon Technologies	IC MOSFET HS PWR SW 35A D2PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NVB110N65S3F	onsemi	MOSFET N-CH 650V 30A D2PAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 240W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock4,710	MOSFET (Metal Oxide)	650 V	30A (Tc)	10V	5V @ 3mA	58 nC @ 10 V	2560 pF @ 400 V	±30V	-	240W (Tc)	110mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SIHB11N80AE-GE3	Vishay Siliconix	MOSFET N-CH 800V 8A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,988	MOSFET (Metal Oxide)	800 V	8A (Tc)	10V	4V @ 250µA	42 nC @ 10 V	804 pF @ 100 V	±30V	-	78W (Tc)	450mOhm @ 5.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVD5865NLT4G	onsemi	MOSFET N-CH 60V 10A/46A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 71W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	10A (Ta), 46A (Tc)	4.5V, 10V	2V @ 250µA	29 nC @ 10 V	1400 pF @ 25 V	±20V	-	3.1W (Ta), 71W (Tc)	16mOhm @ 19A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
PJQ5428_R2_00001	Panjit International Inc.	30V N-CHANNEL ENHANCEMENT MODE M FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	20A (Ta), 130A (Tc)	4.5V, 10V	2.5V @ 250µA	60 nC @ 4.5 V	6771 pF @ 25 V	±20V	-	2W (Ta), 83W (Tc)	1.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060-8	8-PowerVDFN
MCP90N12A-BP	Micro Commercial Co	N-CHANNEL MOSFET,TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 120 V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 60 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 166W Rds On (Max) @ Id, Vgs: 9mOhm @ 45A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock14,853	MOSFET (Metal Oxide)	120 V	90A (Tc)	4.5V, 10V	3V @ 250µA	72 nC @ 10 V	4600 pF @ 60 V	±20V	-	166W	9mOhm @ 45A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS5H663NLT1G	onsemi	MOSFET N-CH 60V 16.2A/67A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1131 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 63W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,398	MOSFET (Metal Oxide)	60 V	16.2A (Ta), 67A (Tc)	4.5V, 10V	2V @ 56µA	17 nC @ 10 V	1131 pF @ 30 V	±20V	-	3.7W (Ta), 63W (Tc)	7.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SIJ4106DP-T1-GE3	Vishay Siliconix	N-CHANNEL 100 V (D-S) MOSFET POW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock18,000	MOSFET (Metal Oxide)	100 V	15.8A (Ta), 59A (Tc)	7.5V, 10V	3.8V @ 250µA	64 nC @ 10 V	3610 pF @ 50 V	±20V	-	5W (Ta), 69.4W (Tc)	8.3mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IPZA60R037P7XKSA1	Infineon Technologies	MOSFET N-CH 600V 76A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.48mA Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: -	Stock720	MOSFET (Metal Oxide)	600 V	76A (Tc)	10V	4V @ 1.48mA	121 nC @ 10 V	5243 pF @ 400 V	±20V	-	255W (Tc)	37mOhm @ 29.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
NVMFS5833NLT1G	onsemi	MOSFET N-CH 40V 16A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	16A (Ta)	10V	3.5V @ 250µA	32.5 nC @ 10 V	1714 pF @ 25 V	±20V	-	3.7W (Ta)	7.5mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads