Page 581 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRF9Z24NSPBF
Infineon Technologies

MOSFET P-CH 55V 12A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock60,012
IPU10N03LA
Infineon Technologies

MOSFET N-CH 25V 30A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock7,344
SI7674DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 40A PPAK SO-8

Package: PowerPAK? SO-8

Stock9,348
IRL540A
Fairchild/ON Semiconductor

MOSFET N-CH 100V 28A TO-220

Package: TO-220-3

Stock5,968
FQU7P20TU_AM002
Fairchild/ON Semiconductor

MOSFET P-CH 200V 5.7A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,752
FQPF9N50CT
Fairchild/ON Semiconductor

MOSFET N-CH 500V 9A TO-220F

Package: TO-220-3 Full Pack

Stock13,272
FQB10N20CTM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 9.5A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock58,200
SPA20N60CFDXKSA1
Infineon Technologies

MOSFET N-CH 600V 20.7A TO220-3

Package: TO-220-3 Full Pack

Stock6,512
IXFN102N30P
IXYS

MOSFET N-CH 300V 88A SOT227B

Package: SOT-227-4, miniBLOC

Stock6,496
DMG7N65SCTI
Diodes Incorporated

MOSFET BVDSS: 501V 650V ITO-220A

Package: TO-220-3 Full Pack, Isolated Tab

Stock5,152
NTMFS5C450NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,488
IRF1404ZSTRLPBF
Infineon Technologies

MOSFET N-CH 40V 75A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock110,832
DMG301NU-13
Diodes Incorporated

MOSFET N-CH 25V .26A SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock7,232
IPZ60R040C7XKSA1
Infineon Technologies

MOSFET N-CH 600V 50A TO247-4

Package: TO-247-4

Stock6,156
FCD7N60TM
Fairchild/ON Semiconductor

MOSFET N-CH 600V 7A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock9,876
TK5P60W5-RVQ
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

Package: -

Stock6,000
SIR186DP-T1-RE3
Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

Package: -

Stock20,715
IRFU220BTU-AM002
onsemi

MOSFET N-CH 200V 4.6A IPAK

Package: -

Request a Quote
PJF8NA65A_T0_00001
Panjit International Inc.

650V N-CHANNEL MOSFET

Package: -

Request a Quote
SIB4317EDK-T1-GE3
Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET POWE

Package: -

Stock10,497

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRF9Z24NSPBF	Infineon Technologies	MOSFET P-CH 55V 12A D2PAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock60,012	MOSFET (Metal Oxide)	55V	12A (Tc)	10V	4V @ 250µA	19nC @ 10V	350pF @ 25V	±20V	-	3.8W (Ta), 45W (Tc)	175 mOhm @ 7.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPU10N03LA	Infineon Technologies	MOSFET N-CH 25V 30A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1358pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 10.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: P-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock7,344	MOSFET (Metal Oxide)	25V	30A (Tc)	4.5V, 10V	2V @ 20µA	11nC @ 5V	1358pF @ 15V	±20V	-	52W (Tc)	10.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	P-TO251-3	TO-251-3 Short Leads, IPak, TO-251AA
SI7674DP-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 40A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock9,348	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	3V @ 250µA	90nC @ 10V	5910pF @ 15V	±20V	-	5.4W (Ta), 83W (Tc)	3.3 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRL540A	Fairchild/ON Semiconductor	MOSFET N-CH 100V 28A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1580pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 121W (Tc) Rds On (Max) @ Id, Vgs: 58 mOhm @ 14A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock5,968	MOSFET (Metal Oxide)	100V	28A (Tc)	5V	2V @ 250µA	54nC @ 5V	1580pF @ 25V	±20V	-	121W (Tc)	58 mOhm @ 14A, 5V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQU7P20TU_AM002	Fairchild/ON Semiconductor	MOSFET P-CH 200V 5.7A IPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,752	MOSFET (Metal Oxide)	200V	5.7A (Tc)	10V	5V @ 250µA	25nC @ 10V	770pF @ 25V	±30V	-	2.5W (Ta), 55W (Tc)	690 mOhm @ 2.85A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
FQPF9N50CT	Fairchild/ON Semiconductor	MOSFET N-CH 500V 9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 44W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock13,272	MOSFET (Metal Oxide)	500V	9A (Tc)	10V	4V @ 250µA	35nC @ 10V	1030pF @ 25V	±30V	-	44W (Tc)	800 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
FQB10N20CTM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 9.5A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 72W (Tc) Rds On (Max) @ Id, Vgs: 360 mOhm @ 4.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock58,200	MOSFET (Metal Oxide)	200V	9.5A (Tc)	10V	4V @ 250µA	26nC @ 10V	510pF @ 25V	±30V	-	72W (Tc)	360 mOhm @ 4.75A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SPA20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 600V 20.7A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 220 mOhm @ 13.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,512	MOSFET (Metal Oxide)	600V	20.7A (Tc)	10V	5V @ 1mA	124nC @ 10V	2400pF @ 25V	±20V	-	35W (Tc)	220 mOhm @ 13.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IXFN102N30P	IXYS	MOSFET N-CH 300V 88A SOT227B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 88A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 33 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,496	MOSFET (Metal Oxide)	300V	88A	10V	5V @ 4mA	224nC @ 10V	7500pF @ 25V	±20V	-	600W (Tc)	33 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
DMG7N65SCTI	Diodes Incorporated	MOSFET BVDSS: 501V 650V ITO-220A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 50V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock5,152	MOSFET (Metal Oxide)	650V	7.7A (Tc)	10V	4V @ 250µA	25.2nC @ 10V	886pF @ 50V	±30V	-	28W (Tc)	1.4 Ohm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB	TO-220-3 Full Pack, Isolated Tab
NTMFS5C450NT3G	ON Semiconductor	MOSFET N-CH 40V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 65µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,488	MOSFET (Metal Oxide)	40V	24A (Ta), 102A (Tc)	10V	3.5V @ 65µA	23nC @ 10V	1600pF @ 25V	±20V	-	3.6W (Ta), 68W (Tc)	3.3 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
IRF1404ZSTRLPBF	Infineon Technologies	MOSFET N-CH 40V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock110,832	MOSFET (Metal Oxide)	40V	120A (Tc)	10V	4V @ 150µA	150nC @ 10V	4340pF @ 25V	±20V	-	200W (Tc)	3.7 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
DMG301NU-13	Diodes Incorporated	MOSFET N-CH 25V .26A SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V Vgs (Max): 8V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock7,232	MOSFET (Metal Oxide)	25V	260mA (Ta)	2.7V, 4.5V	1.1V @ 250µA	0.36nC @ 4.5V	27.9pF @ 10V	8V	-	320mW (Ta)	4 Ohm @ 400mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
IPZ60R040C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 50A TO247-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 24.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	Package: TO-247-4	Stock6,156	MOSFET (Metal Oxide)	600V	50A (Tc)	10V	4V @ 1.24mA	107nC @ 10V	4340pF @ 400V	±20V	-	227W (Tc)	40 mOhm @ 24.9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
FCD7N60TM	Fairchild/ON Semiconductor	MOSFET N-CH 600V 7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock9,876	MOSFET (Metal Oxide)	600V	7A (Tc)	10V	5V @ 250µA	30nC @ 10V	920pF @ 25V	±30V	-	83W (Tc)	600 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
TK5P60W5-RVQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 230µA Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.3A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,000	MOSFET (Metal Oxide)	600 V	4.5A (Ta)	10V	4.5V @ 230µA	11.5 nC @ 10 V	370 pF @ 300 V	±30V	-	60W (Tc)	990mOhm @ 2.3A, 10V	150°C	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR186DP-T1-RE3	Vishay Siliconix	MOSFET N-CH 60V 60A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock20,715	MOSFET (Metal Oxide)	60 V	23A (Ta), 60A (Tc)	6V, 10V	3.6V @ 250µA	37 nC @ 10 V	1710 pF @ 30 V	±20V	-	5W (Ta), 57W (Tc)	4.5mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
IRFU220BTU-AM002	onsemi	MOSFET N-CH 200V 4.6A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK Package / Case: TO-251-3 Short Leads, IPAK, TO-251AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	4.6A (Tc)	10V	4V @ 250µA	16 nC @ 10 V	390 pF @ 25 V	±30V	-	2.5W (Ta), 40W (Tc)	800mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	IPAK	TO-251-3 Short Leads, IPAK, TO-251AA
PJF8NA65A_T0_00001	Panjit International Inc.	650V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220AB-F Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7.5A (Ta)	10V	4V @ 250µA	29 nC @ 10 V	1245 pF @ 25 V	±30V	-	46W (Tc)	1.2Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220AB-F	TO-220-3 Full Pack, Isolated Tab
SIB4317EDK-T1-GE3	Vishay Siliconix	P-CHANNEL 30-V (D-S) MOSFET POWE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.95W (Ta), 10W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-75-6 Package / Case: PowerPAK® SC-75-6	Package: -	Stock10,497	MOSFET (Metal Oxide)	30 V	4.3A (Ta), 4.5A (Tc)	2.5V, 10V	1.3V @ 250µA	23 nC @ 10 V	600 pF @ 15 V	±12V	-	1.95W (Ta), 10W (Tc)	65mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-75-6	PowerPAK® SC-75-6
CPH3424-TL-E	onsemi	NCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF7726TRPBFXTMA1	Infineon Technologies	MOSFET P-CH 30V 7A MICRO8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2204 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Micro8™ Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	7A (Ta)	4.5V, 10V	2.5V @ 250µA	69 nC @ 10 V	2204 pF @ 25 V	±20V	-	1.79W (Ta)	26mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Micro8™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
SQJQ402E-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 200A PPAK 8 X 8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 8 x 8 Package / Case: PowerPAK® 8 x 8	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	200A (Tc)	4.5V, 10V	2.5V @ 250µA	260 nC @ 10 V	13500 pF @ 20 V	±20V	-	150W (Tc)	1.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 8 x 8	PowerPAK® 8 x 8
FS50VS-3-T11	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
FCMT080N65S3	onsemi	MOSFET N-CH 650V 38A 4TDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 880µA Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 260W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-TDFN (8x8) Package / Case: 4-PowerTSFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	38A (Tc)	10V	4.5V @ 880µA	71 nC @ 10 V	2765 pF @ 400 V	±30V	-	260W (Tc)	80mOhm @ 19A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	4-TDFN (8x8)	4-PowerTSFN
AO3454	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 5.8A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 5.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.8A (Ta)	4.5V, 10V	2.6V @ 250µA	18 nC @ 10 V	373 pF @ 15 V	±20V	-	1.4W (Ta)	25mOhm @ 5.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant
DMP4026SFGQ-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2275 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.6W (Ta), 33W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: POWERDI3333-8 Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	28A (Tc)	4.5V, 10V	1.8V @ 250µA	48 nC @ 10 V	2275 pF @ 20 V	±20V	-	2.6W (Ta), 33W (Tc)	25mOhm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	POWERDI3333-8	8-PowerVDFN
DMTH4014LFVW-7	Diodes Incorporated	MOSFET BVDSS: 31V~40V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 49.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 57.7W (Tc) Rds On (Max) @ Id, Vgs: 13.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	11.5A (Ta), 49.8A (Tc)	4.5V, 10V	3V @ 250µA	11.2 nC @ 10 V	750 pF @ 20 V	±20V	-	3.1W (Ta), 57.7W (Tc)	13.7mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN