Page 583 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSO052N03S
Infineon Technologies

MOSFET N-CH 30V 14A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock242,400
IRF3708S
Infineon Technologies

MOSFET N-CH 30V 62A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock390,528
AOW2502
Alpha & Omega Semiconductor Inc.

MOSFET NCH 150V 106A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,400
NTD3055L104G
ON Semiconductor

MOSFET N-CH 60V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock126,192
FDU8780
Fairchild/ON Semiconductor

MOSFET N-CH 25V 35A I-PAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock31,548
TPCA8010-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 200V 5.5A 8-SOPA

Package: 8-PowerVDFN

Stock4,096
IXFT16N80P
IXYS

MOSFET N-CH 800V 16A TO-268

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock3,184
NVMFS5C646NLWFAFT1G
ON Semiconductor

MOSFET N-CH 60V SO8FL

Package: 8-PowerTDFN, 5 Leads

Stock3,952
SKI03087
Sanken

MOSFET N-CH 30V 40A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,448
CPC3701CTR
IXYS Integrated Circuits Division

MOSFET N-CH 60V SOT89

Package: TO-243AA

Stock4,160
IXTK110N20L2
IXYS

MOSFET N-CH 200V 110A TO-264

Package: TO-264-3, TO-264AA

Stock7,728
IRF7420TRPBF
Infineon Technologies

MOSFET P-CH 12V 11.5A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock17,400
STP14NM50N
STMicroelectronics

MOSFET N-CH 500V 12A TO-220

Package: TO-220-3

Stock67,260
TPH3208LS
Transphorm

GAN FET 650V 20A PQFN88

Package: 3-PowerDFN

Stock7,536
NTD4815N-35G
ON Semiconductor

MOSFET NCH 30V 6.9A IPAK TRIMMED

Package: TO-251-3 Stub Leads, IPak

Stock17,706
IRLR2905TRPBF
Infineon Technologies

MOSFET N-CH 55V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock544,272
DN3525N8-G
Microchip Technology

MOSFET N-CH 250V 360MA SOT89-3

Package: TO-243AA

Stock15,240
STB270N4F3
STMicroelectronics

MOSFET N-CH 40V 160A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock799,140
XP9575GH
YAGEO XSEMI

MOSFET P-CH 60V 15A TO252

Package: -

Stock2,823
2SK4085LS-CBC11-SY
Sanyo

MOSFET N-CH

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSO052N03S	Infineon Technologies	MOSFET N-CH 30V 14A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 5530pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock242,400	MOSFET (Metal Oxide)	30V	14A (Ta)	4.5V, 10V	2V @ 70µA	43nC @ 5V	5530pF @ 15V	±20V	-	1.56W (Ta)	5.2 mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF3708S	Infineon Technologies	MOSFET N-CH 30V 62A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2417pF @ 15V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 87W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock390,528	MOSFET (Metal Oxide)	30V	62A (Tc)	2.8V, 10V	2V @ 250µA	24nC @ 4.5V	2417pF @ 15V	±12V	-	87W (Tc)	12 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AOW2502	Alpha & Omega Semiconductor Inc.	MOSFET NCH 150V 106A TO262 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3010pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 277W (Tc) Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,400	MOSFET (Metal Oxide)	150V	16A (Ta), 106A (Tc)	10V	5.1V @ 250µA	60nC @ 10V	3010pF @ 75V	±20V	-	6.2W (Ta), 277W (Tc)	10.7 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I2Pak, TO-262AA
NTD3055L104G	ON Semiconductor	MOSFET N-CH 60V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Vgs (Max): ±15V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Rds On (Max) @ Id, Vgs: 104 mOhm @ 6A, 5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock126,192	MOSFET (Metal Oxide)	60V	12A (Ta)	5V	2V @ 250µA	20nC @ 5V	440pF @ 25V	±15V	-	1.5W (Ta), 48W (Tj)	104 mOhm @ 6A, 5V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FDU8780	Fairchild/ON Semiconductor	MOSFET N-CH 25V 35A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 13V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock31,548	MOSFET (Metal Oxide)	25V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	29nC @ 10V	1440pF @ 13V	±20V	-	50W (Tc)	8.5 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251AA	TO-251-3 Short Leads, IPak, TO-251AA
TPCA8010-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 200V 5.5A 8-SOPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock4,096	MOSFET (Metal Oxide)	200V	5.5A (Ta)	10V	4V @ 1mA	10nC @ 10V	600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	450 mOhm @ 2.7A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
IXFT16N80P	IXYS	MOSFET N-CH 800V 16A TO-268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 460W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock3,184	MOSFET (Metal Oxide)	800V	16A (Tc)	10V	5V @ 4mA	71nC @ 10V	4600pF @ 25V	±30V	-	460W (Tc)	600 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
NVMFS5C646NLWFAFT1G	ON Semiconductor	MOSFET N-CH 60V SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2164pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock3,952	MOSFET (Metal Oxide)	60V	20A (Ta), 93A (Tc)	4.5V, 10V	2V @ 250µA	33.7nC @ 10V	2164pF @ 25V	±20V	-	3.7W (Ta), 79W (Tc)	4.7 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SKI03087	Sanken	MOSFET N-CH 30V 40A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 31.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,448	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.5V @ 250µA	16.3nC @ 10V	1030pF @ 15V	±20V	-	52W (Tc)	9 mOhm @ 31.5A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CPC3701CTR	IXYS Integrated Circuits Division	MOSFET N-CH 60V SOT89 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±15V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 1 Ohm @ 300mA, 0V Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	Package: TO-243AA	Stock4,160	MOSFET (Metal Oxide)	60V	-	0V	-	-	-	±15V	Depletion Mode	1.1W (Ta)	1 Ohm @ 300mA, 0V	-55°C ~ 125°C (TJ)	Surface Mount	SOT-89	TO-243AA
IXTK110N20L2	IXYS	MOSFET N-CH 200V 110A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 960W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 (IXTK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,728	MOSFET (Metal Oxide)	200V	110A (Tc)	10V	4.5V @ 3mA	500nC @ 10V	23000pF @ 25V	±20V	-	960W (Tc)	24 mOhm @ 55A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264 (IXTK)	TO-264-3, TO-264AA
IRF7420TRPBF	Infineon Technologies	MOSFET P-CH 12V 11.5A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3529pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14 mOhm @ 11.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock17,400	MOSFET (Metal Oxide)	12V	11.5A (Tc)	1.8V, 4.5V	900mV @ 250µA	38nC @ 4.5V	3529pF @ 10V	±8V	-	2.5W (Ta)	14 mOhm @ 11.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
STP14NM50N	STMicroelectronics	MOSFET N-CH 500V 12A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: TO-220-3	Stock67,260	MOSFET (Metal Oxide)	500V	12A (Tc)	10V	4V @ 100µA	27nC @ 10V	816pF @ 50V	±25V	-	90W (Tc)	320 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
TPH3208LS	Transphorm	GAN FET 650V 20A PQFN88 FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V Vgs(th) (Max) @ Id: 2.6V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 400V Vgs (Max): ±18V FET Feature: - Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 130 mOhm @ 13A, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (8x8) Package / Case: 3-PowerDFN	Package: 3-PowerDFN	Stock7,536	GaNFET (Gallium Nitride)	650V	20A (Tc)	8V	2.6V @ 300µA	14nC @ 8V	760pF @ 400V	±18V	-	96W (Tc)	130 mOhm @ 13A, 8V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (8x8)	3-PowerDFN
NTD4815N-35G	ON Semiconductor	MOSFET NCH 30V 6.9A IPAK TRIMMED FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 11.5V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.26W (Ta), 32.6W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock17,706	MOSFET (Metal Oxide)	30V	6.9A (Ta), 35A (Tc)	4.5V, 11.5V	2.5V @ 250µA	14.1nC @ 11.5V	770pF @ 12V	±20V	-	1.26W (Ta), 32.6W (Tc)	15 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I-Pak	TO-251-3 Stub Leads, IPak
IRLR2905TRPBF	Infineon Technologies	MOSFET N-CH 55V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock544,272	MOSFET (Metal Oxide)	55V	42A (Tc)	4V, 10V	2V @ 250µA	48nC @ 5V	1700pF @ 25V	±16V	-	110W (Tc)	27 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
DN3525N8-G	Microchip Technology	MOSFET N-CH 250V 360MA SOT89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-243AA (SOT-89) Package / Case: TO-243AA	Package: TO-243AA	Stock15,240	MOSFET (Metal Oxide)	250V	360mA (Tj)	0V	-	-	350pF @ 25V	±20V	Depletion Mode	1.6W (Ta)	6 Ohm @ 200mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-243AA (SOT-89)	TO-243AA
STB270N4F3	STMicroelectronics	MOSFET N-CH 40V 160A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 330W (Tc) Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock799,140	MOSFET (Metal Oxide)	40V	160A (Tc)	10V	4V @ 250µA	150nC @ 10V	7400pF @ 25V	±20V	-	330W (Tc)	2.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
XP9575GH	YAGEO XSEMI	MOSFET P-CH 60V 15A TO252 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 25 V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 31.3W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock2,823	MOSFET (Metal Oxide)	60 V	15A (Tc)	4.5V, 10V	3V @ 250µA	27 nC @ 4.5 V	2660 pF @ 25 V	±25V	-	31.3W (Tc)	90mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252	TO-252-3, DPAK (2 Leads + Tab), SC-63
2SK4085LS-CBC11-SY	Sanyo	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DI035P04PT	Diotec Semiconductor	MOSFET POWERQFN 3X3 P -40V -35A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-QFN (3x3) Package / Case: 8-PowerWDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	35A (Tc)	4.5V, 10V	2.5V @ 250µA	30 nC @ 10 V	2570 pF @ 20 V	±20V	-	40W (Tc)	19mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-QFN (3x3)	8-PowerWDFN
CPH3338-TL-E	onsemi	PCH 4V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS670AHZGT116	Rohm Semiconductor	NCH 60V 650MA, SOT-23, SMALL SIG FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SST3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	650mA (Ta)	2.5V, 10V	2V @ 10µA	-	47 pF @ 30 V	±20V	-	200mW (Ta)	680mOhm @ 650mA, 10V	150°C (TJ)	Surface Mount	SST3	TO-236-3, SC-59, SOT-23-3
SUM70030M-GE3	Vishay Siliconix	MOSFET N-CH 100V 150A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock879	MOSFET (Metal Oxide)	100 V	150A (Tc)	-	4V @ 250µA	214 nC @ 10 V	10870 pF @ 50 V	±20V	-	375W (Tc)	3.5mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-7	TO-263-7, D2PAK (6 Leads + Tab)
BUZ11-NR4941	onsemi	MOSFET N-CH 50V 30A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	50 V	30A (Tc)	10V	4V @ 1mA	-	2000 pF @ 25 V	±20V	-	75W (Tc)	40mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
IXFY36N20X3	IXYS	MOSFET N-CH 200V 36A TO252AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	36A (Tc)	10V	4.5V @ 500µA	21 nC @ 10 V	1425 pF @ 25 V	±20V	-	176W (Tc)	45mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPD50N10S3L16ATMA2	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	50A (Tc)	4.5V, 10V	2.4V @ 60µA	64 nC @ 10 V	4180 pF @ 25 V	±20V	-	100W (Tc)	15mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPAK (2 Leads + Tab), SC-63
P6402FMG-ML	MOSLEADER	Single P -20V -4A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-