Page 582 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

MCH6431-TL-H
ON Semiconductor

MOSFET N-CH 30V 5A MCPH6

Package: 6-SMD, Flat Leads

Stock3,600
FQPF5N30
Fairchild/ON Semiconductor

MOSFET N-CH 300V 3.9A TO-220F

Package: TO-220-3 Full Pack

Stock3,328
2SK2299N
Rohm Semiconductor

MOSFET N-CH 450V 7A TO-220FN

Package: TO-220-3 Full Pack

Stock5,472
IRL630STRR
Vishay Siliconix

MOSFET N-CH 200V 9A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,376
BUK7504-40A,127
NXP

MOSFET N-CH 40V 75A TO220AB

Package: TO-220-3

Stock2,704
SI7455DP-T1-E3
Vishay Siliconix

MOSFET P-CH 80V 28A PPAK SO-8

Package: PowerPAK? SO-8

Stock6,432
NVMFS4C01NT3G
ON Semiconductor

MOSFET N-CH 30V 49A SO8FL

Package: 8-PowerTDFN

Stock6,992
DMP2007UFG-13
Diodes Incorporated

MOSFET P-CH 20V 18A PWRDI3333-8

Package: 8-PowerWDFN

Stock4,128
GKI10301
Sanken

MOSFET N-CH 100V 5A 8DFN

Package: 8-PowerTDFN

Stock5,424
SI4833BDY-T1-GE3
Vishay Siliconix

MOSFET P-CH 30V W/S 8-SOIC

Package: -

Stock6,592
SQ3419EV-T1_GE3
Vishay Siliconix

MOSFET P-CH 40V 7.4A 6TSOP

Package: -

Stock7,488
IXFK48N60Q3
IXYS

MOSFET N-CH 600V 48A TO-264

Package: TO-264-3, TO-264AA

Stock6,096
IRFS7730TRLPBF
Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
FCA35N60
Fairchild/ON Semiconductor

MOSFET N-CH 600V 35A TO-3PN

Package: TO-3P-3, SC-65-3

Stock103,716
IRFS3107PBF
Infineon Technologies

MOSFET N-CH 75V 195A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,456
NTLJF4156NT1G
ON Semiconductor

MOSFET N-CH 30V 2.5A 6-WDFN

Package: 6-WDFN Exposed Pad

Stock129,108
IRLS3036TRL7PP
Infineon Technologies

MOSFET N-CH 60V 240A D2PAK-7

Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Stock14,532
IXFK180N25T
IXYS

MOSFET N-CH 250V 180A TO-264

Package: TO-264-3, TO-264AA

Stock15,396
IXFH40N30
IXYS

MOSFET N-CH 300V 40A TO-247AD

Package: TO-247-3

Stock486,912
SIRS5800DP-T1-GE3
Vishay Siliconix

N-CHANNEL 80 V (D-S) MOSFET POWE

Package: -

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Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
MCH6431-TL-H	ON Semiconductor	MOSFET N-CH 30V 5A MCPH6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MCPH Package / Case: 6-SMD, Flat Leads	Package: 6-SMD, Flat Leads	Stock3,600	MOSFET (Metal Oxide)	30V	5A (Ta)	4V, 10V	-	5.6nC @ 10V	280pF @ 10V	±20V	-	1.5W (Ta)	55 mOhm @ 2.5A, 10V	150°C (TJ)	Surface Mount	6-MCPH	6-SMD, Flat Leads
FQPF5N30	Fairchild/ON Semiconductor	MOSFET N-CH 300V 3.9A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 1.95A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock3,328	MOSFET (Metal Oxide)	300V	3.9A (Tc)	10V	5V @ 250µA	13nC @ 10V	430pF @ 25V	±30V	-	35W (Tc)	900 mOhm @ 1.95A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
2SK2299N	Rohm Semiconductor	MOSFET N-CH 450V 7A TO-220FN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FN Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock5,472	MOSFET (Metal Oxide)	450V	7A (Ta)	10V	4V @ 1mA	-	870pF @ 10V	±30V	-	30W (Tc)	1.1 Ohm @ 4A, 10V	150°C (TJ)	Through Hole	TO-220FN	TO-220-3 Full Pack
IRL630STRR	Vishay Siliconix	MOSFET N-CH 200V 9A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Rds On (Max) @ Id, Vgs: 400 mOhm @ 5.4A, 5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,376	MOSFET (Metal Oxide)	200V	9A (Tc)	4V, 5V	2V @ 250µA	40nC @ 10V	1100pF @ 25V	±10V	-	3.1W (Ta), 74W (Tc)	400 mOhm @ 5.4A, 5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK7504-40A,127	NXP	MOSFET N-CH 40V 75A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5730pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,704	MOSFET (Metal Oxide)	40V	75A (Tc)	10V	4V @ 1mA	117nC @ 10V	5730pF @ 25V	±20V	-	300W (Tc)	4.5 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SI7455DP-T1-E3	Vishay Siliconix	MOSFET P-CH 80V 28A PPAK SO-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock6,432	MOSFET (Metal Oxide)	80V	28A (Tc)	6V, 10V	4V @ 250µA	155nC @ 10V	5160pF @ 40V	±20V	-	5.2W (Ta), 83.3W (Tc)	25 mOhm @ 10.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
NVMFS4C01NT3G	ON Semiconductor	MOSFET N-CH 30V 49A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 319A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10144pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.84W (Ta), 161W (Tc) Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock6,992	MOSFET (Metal Oxide)	30V	49A (Ta), 319A (Tc)	4.5V, 10V	2.2V @ 250µA	139nC @ 10V	10144pF @ 15V	±20V	-	3.84W (Ta), 161W (Tc)	0.9 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMP2007UFG-13	Diodes Incorporated	MOSFET P-CH 20V 18A PWRDI3333-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4621pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,128	MOSFET (Metal Oxide)	20V	18A (Ta), 40A (Tc)	2.5V, 10V	1.3V @ 250µA	85nC @ 10V	4621pF @ 10V	±12V	-	2.3W (Ta)	5.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
GKI10301	Sanken	MOSFET N-CH 100V 5A 8DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 650µA Gate Charge (Qg) (Max) @ Vgs: 35.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2540pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 59W (Tc) Rds On (Max) @ Id, Vgs: 28 mOhm @ 14.2A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN (5x6) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock5,424	MOSFET (Metal Oxide)	100V	5A (Ta)	4.5V, 10V	2.5V @ 650µA	35.8nC @ 10V	2540pF @ 25V	±20V	-	3.1W (Ta), 59W (Tc)	28 mOhm @ 14.2A, 10V	150°C (TJ)	Surface Mount	8-DFN (5x6)	8-PowerTDFN
SI4833BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V W/S 8-SOIC FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock6,592	-	-	-	4.5V, 10V	-	-	-	±20V	-	-	-	-	-	-	-
SQ3419EV-T1_GE3	Vishay Siliconix	MOSFET P-CH 40V 7.4A 6TSOP FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,488	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFK48N60Q3	IXYS	MOSFET N-CH 600V 48A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1000W (Tc) Rds On (Max) @ Id, Vgs: 140 mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock6,096	MOSFET (Metal Oxide)	600V	48A (Tc)	10V	6.5V @ 4mA	140nC @ 10V	7020pF @ 25V	±30V	-	1000W (Tc)	140 mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IRFS7730TRLPBF	Infineon Technologies	MOSFET N-CH 75V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 407nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13660pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	3.7V @ 250µA	407nC @ 10V	13660pF @ 25V	±20V	-	375W (Tc)	2.6 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FCA35N60	Fairchild/ON Semiconductor	MOSFET N-CH 600V 35A TO-3PN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 181nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6640pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 312.5W (Tc) Rds On (Max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PN Package / Case: TO-3P-3, SC-65-3	Package: TO-3P-3, SC-65-3	Stock103,716	MOSFET (Metal Oxide)	600V	35A (Tc)	10V	5V @ 250µA	181nC @ 10V	6640pF @ 25V	±30V	-	312.5W (Tc)	98 mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PN	TO-3P-3, SC-65-3
IRFS3107PBF	Infineon Technologies	MOSFET N-CH 75V 195A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9370pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 140A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,456	MOSFET (Metal Oxide)	75V	195A (Tc)	10V	4V @ 250µA	240nC @ 10V	9370pF @ 50V	±20V	-	370W (Tc)	3 mOhm @ 140A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTLJF4156NT1G	ON Semiconductor	MOSFET N-CH 30V 2.5A 6-WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 427pF @ 15V Vgs (Max): ±8V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Rds On (Max) @ Id, Vgs: 70 mOhm @ 2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WDFN (2x2) Package / Case: 6-WDFN Exposed Pad	Package: 6-WDFN Exposed Pad	Stock129,108	MOSFET (Metal Oxide)	30V	2.5A (Tj)	1.5V, 4.5V	1V @ 250µA	6.5nC @ 4.5V	427pF @ 15V	±8V	Schottky Diode (Isolated)	710mW (Ta)	70 mOhm @ 2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN (2x2)	6-WDFN Exposed Pad
IRLS3036TRL7PP	Infineon Technologies	MOSFET N-CH 60V 240A D2PAK-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.9 mOhm @ 180A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	Stock14,532	MOSFET (Metal Oxide)	60V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	160nC @ 4.5V	11270pF @ 50V	±16V	-	380W (Tc)	1.9 mOhm @ 180A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
IXFK180N25T	IXYS	MOSFET N-CH 250V 180A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1390W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock15,396	MOSFET (Metal Oxide)	250V	180A (Tc)	10V	5V @ 8mA	345nC @ 10V	28000pF @ 25V	±20V	-	1390W (Tc)	12.9 mOhm @ 60A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH40N30	IXYS	MOSFET N-CH 300V 40A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock486,912	MOSFET (Metal Oxide)	300V	40A (Tc)	10V	4V @ 4mA	200nC @ 10V	4800pF @ 25V	±20V	-	300W (Tc)	85 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
SIRS5800DP-T1-GE3	Vishay Siliconix	N-CHANNEL 80 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	46A (Ta), 265A (Tc)	7.5V, 10V	4V @ 250µA	122 nC @ 10 V	6190 pF @ 40 V	±20V	-	7.4W (Ta), 240W (Tc)	1.8mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
NTE2946	NTE Electronics, Inc	MOSFET-PWR N-CHAN ENHAN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 4.6A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	4.6A	10V	4V @ 250µA	74 nC @ 10 V	1510 pF @ 25 V	±20V	-	40W (Tc)	850mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
NDS351AN-NL-ML	MOSLEADER	N-Channel 30V 1.4A SOT-23-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MCACL280N03Y-TP	Micro Commercial Co	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5877 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	280A (Tc)	4.5V, 10V	2.5V @ 250µA	135 nC @ 10 V	5877 pF @ 25 V	±20V	-	150W (Tj)	0.7mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
IRF624PBF-BE3	Vishay Siliconix	MOSFET N-CH 250V 4.4A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 2.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	250 V	4.4A (Tc)	-	4V @ 250µA	14 nC @ 10 V	260 pF @ 25 V	±20V	-	50W (Tc)	1.1Ohm @ 2.6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSS84W-RFG	Taiwan Semiconductor Corporation	-60, -0.14, SINGLE P-CHANNEL FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 37 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 298mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 140mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-323 Package / Case: SC-70, SOT-323	Package: -	Stock51,258	MOSFET (Metal Oxide)	60 V	140mA (Ta)	4.5V, 10V	2V @ 250µA	1.9 nC @ 10 V	37 pF @ 30 V	±20V	-	298mW (Ta)	8Ohm @ 140mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-323	SC-70, SOT-323
SQ2310ES-T1_BE3	Vishay Siliconix	MOSFET N-CH 20V 6A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock90,519	MOSFET (Metal Oxide)	20 V	6A (Tc)	1.5V, 4.5V	1V @ 250µA	8.5 nC @ 4.5 V	485 pF @ 10 V	±8V	-	2W (Tc)	30mOhm @ 5A, 4.5V	-55°C ~ 175°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
DMPH4013SK3-13	Diodes Incorporated	MOSFET P-CH 40V 55A TO252 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4004 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock6,006	MOSFET (Metal Oxide)	40 V	55A (Tc)	4.5V, 10V	3V @ 250µA	67 nC @ 10 V	4004 pF @ 20 V	±20V	-	2.1W (Ta)	15mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
AO3452	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 4A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.4W (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: 3-SMD, SOT-23-3 Variant	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	4A (Ta)	2.5V, 10V	1.5V @ 250µA	20 nC @ 10 V	235 pF @ 15 V	±12V	-	1.4W (Ta)	52mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	3-SMD, SOT-23-3 Variant