Page 59 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR3704ZCPBF
Infineon Technologies

MOSFET N-CH 20V 60A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,744
JANTXV2N6849U
Microsemi Corporation

MOSFET P-CH 100V 6.5A

Package: 18-BQFN Exposed Pad

Stock3,648
JANTX2N6800U
Microsemi Corporation

MOSFET N-CH

Package: 18-BQFN Exposed Pad

Stock4,496
NTMS4503NR2G
ON Semiconductor

MOSFET N-CH 28V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,012,800
HUFA76629D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 100V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,184
STP5NK40Z
STMicroelectronics

MOSFET N-CH 400V 3A TO-220

Package: TO-220-3

Stock6,256
IPB80N06S407ATMA2
Infineon Technologies

MOSFET N-CH 60V 80A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,944
HAT2279H-EL-E
Renesas Electronics America

MOSFET N-CH 80V 30A 5LFPAK

Package: SC-100, SOT-669

Stock6,656
SSU1N50BTU
Fairchild/ON Semiconductor

MOSFET N-CH 520V 1.3A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock120,960
IPA65R380E6
Infineon Technologies

MOSFET N-CH 650V 10.6A TO220

Package: TO-220-3 Full Pack

Stock115,992
NTMFS5C604NLT1G
ON Semiconductor

MOSFET N-CH 60V 289A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock7,872
FDMC8884
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A POWER33

Package: 8-PowerWDFN

Stock4,551,480
IRFBA90N20DPBF
Infineon Technologies

MOSFET N-CH 200V 98A SUPER-220

Package: Super-220?-3 (Straight Leads)

Stock8,952
DMN6066SSS-13
Diodes Incorporated

MOSFET N-CH 60V 3.7A 8SO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock16,032
SI1031R-T1-GE3
Vishay Siliconix

MOSFET P-CH 20V 0.14A SC-75A

Package: SC-75A

Stock545,088
FDMS86252
Fairchild/ON Semiconductor

MOSFET N-CH 150V 16A POWER56

Package: 8-PowerTDFN

Stock26,100
PSMN0R9-30YLD-2X
Nexperia USA Inc.

PSMN0R9-30YLD/SOT1023/4 LEADS

Package: -

Request a Quote
BSS123LT1
onsemi

MOSFET N-CH 100V 170MA SOT-23

Package: -

Request a Quote
STS2305-ML
MOSLEADER

Single-P -20V -3.4A SOT-23

Package: -

Request a Quote
IXTA08N100D2-TRL
IXYS

MOSFET N-CH 1000V 800MA TO263

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR3704ZCPBF	Infineon Technologies	MOSFET N-CH 20V 60A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,744	MOSFET (Metal Oxide)	20V	60A (Ta)	-	-	14nC @ 4.5V	1190pF @ 10V	-	-	-	8.4 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
JANTXV2N6849U	Microsemi Corporation	MOSFET P-CH 100V 6.5A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 6.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock3,648	MOSFET (Metal Oxide)	100V	6.5A (Tc)	10V	4V @ 250µA	34.8nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	320 mOhm @ 6.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
JANTX2N6800U	Microsemi Corporation	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34.75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 800mW (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-BQFN Exposed Pad	Package: 18-BQFN Exposed Pad	Stock4,496	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4V @ 250µA	34.75nC @ 10V	-	±20V	-	800mW (Ta), 25W (Tc)	1.1 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	18-ULCC (9.14x7.49)	18-BQFN Exposed Pad
NTMS4503NR2G	ON Semiconductor	MOSFET N-CH 28V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 28V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 16V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 930mW (Ta) Rds On (Max) @ Id, Vgs: 8 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,012,800	MOSFET (Metal Oxide)	28V	9A (Ta)	4.5V, 10V	2V @ 250µA	23nC @ 4.5V	2400pF @ 16V	±20V	-	930mW (Ta)	8 mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
HUFA76629D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 100V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,184	MOSFET (Metal Oxide)	100V	20A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1285pF @ 25V	±16V	-	110W (Tc)	52 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
STP5NK40Z	STMicroelectronics	MOSFET N-CH 400V 3A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,256	MOSFET (Metal Oxide)	400V	3A (Tc)	10V	4.5V @ 50µA	17nC @ 10V	305pF @ 25V	±30V	-	45W (Tc)	1.8 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB80N06S407ATMA2	Infineon Technologies	MOSFET N-CH 60V 80A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,944	MOSFET (Metal Oxide)	60V	80A (Tc)	10V	4V @ 40µA	56nC @ 10V	4500pF @ 25V	±20V	-	79W (Tc)	-	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
HAT2279H-EL-E	Renesas Electronics America	MOSFET N-CH 80V 30A 5LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3520pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock6,656	MOSFET (Metal Oxide)	80V	30A (Ta)	4.5V, 10V	-	60nC @ 10V	3520pF @ 10V	±20V	-	25W (Tc)	12 mOhm @ 15A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
SSU1N50BTU	Fairchild/ON Semiconductor	MOSFET N-CH 520V 1.3A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 520V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 5.3 Ohm @ 650mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (IPAK) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock120,960	MOSFET (Metal Oxide)	520V	1.3A (Tc)	10V	4V @ 250µA	11nC @ 10V	340pF @ 25V	±30V	-	2.5W (Ta), 26W (Tc)	5.3 Ohm @ 650mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251 (IPAK)	TO-251-3 Short Leads, IPak, TO-251AA
IPA65R380E6	Infineon Technologies	MOSFET N-CH 650V 10.6A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-FP Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock115,992	MOSFET (Metal Oxide)	650V	10.6A (Tc)	10V	3.5V @ 320µA	39nC @ 10V	710pF @ 100V	±20V	-	31W (Tc)	380 mOhm @ 3.2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO-220-FP	TO-220-3 Full Pack
NTMFS5C604NLT1G	ON Semiconductor	MOSFET N-CH 60V 289A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock7,872	MOSFET (Metal Oxide)	60V	38A (Ta)	4.5V, 10V	2V @ 250µA	120nC @ 10V	8900pF @ 25V	±20V	-	3.9W (Ta), 200W (Tc)	1.2 mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
FDMC8884	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A POWER33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-MLP (3.3x3.3) Package / Case: 8-PowerWDFN	Package: 8-PowerWDFN	Stock4,551,480	MOSFET (Metal Oxide)	30V	9A (Ta), 15A (Tc)	4.5V, 10V	2.5V @ 250µA	14nC @ 10V	685pF @ 15V	±20V	-	2.3W (Ta), 18W (Tc)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-MLP (3.3x3.3)	8-PowerWDFN
IRFBA90N20DPBF	Infineon Technologies	MOSFET N-CH 200V 98A SUPER-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6080pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 650W (Tc) Rds On (Max) @ Id, Vgs: 23 mOhm @ 59A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: SUPER-220? (TO-273AA) Package / Case: Super-220?-3 (Straight Leads)	Package: Super-220?-3 (Straight Leads)	Stock8,952	MOSFET (Metal Oxide)	200V	98A (Tc)	10V	5V @ 250µA	240nC @ 10V	6080pF @ 25V	±30V	-	650W (Tc)	23 mOhm @ 59A, 10V	-55°C ~ 175°C (TJ)	Through Hole	SUPER-220? (TO-273AA)	Super-220?-3 (Straight Leads)
DMN6066SSS-13	Diodes Incorporated	MOSFET N-CH 60V 3.7A 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 66 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock16,032	MOSFET (Metal Oxide)	60V	3.7A (Ta)	4.5V, 10V	3V @ 250µA	10.3nC @ 10V	502pF @ 30V	±20V	-	1.56W (Ta)	66 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
SI1031R-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 0.14A SC-75A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 140mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±6V FET Feature: - Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75A Package / Case: SC-75A	Package: SC-75A	Stock545,088	MOSFET (Metal Oxide)	20V	140mA (Ta)	1.5V, 4.5V	1.2V @ 250µA	1.5nC @ 4.5V	-	±6V	-	250mW (Ta)	8 Ohm @ 150mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-75A	SC-75A
FDMS86252	Fairchild/ON Semiconductor	MOSFET N-CH 150V 16A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 51 mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock26,100	MOSFET (Metal Oxide)	150V	4.6A (Ta), 16A (Tc)	6V, 10V	4V @ 250µA	15nC @ 10V	905pF @ 75V	±20V	-	2.5W (Ta), 69W (Tc)	51 mOhm @ 4.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Power56	8-PowerTDFN
PSMN0R9-30YLD-2X	Nexperia USA Inc.	PSMN0R9-30YLD/SOT1023/4 LEADS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 300A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 291W (Ta) Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	300A (Ta)	4.5V, 10V	2.2V @ 1mA	109 nC @ 10 V	7668 pF @ 15 V	±20V	-	291W (Ta)	0.87mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SOT-1023, 4-LFPAK
BSS123LT1	onsemi	MOSFET N-CH 100V 170MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	170mA (Ta)	-	2.8V @ 1mA	-	20 pF @ 25 V	-	-	-	6Ohm @ 100mA, 10V	-	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
STS2305-ML	MOSLEADER	Single-P -20V -3.4A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTA08N100D2-TRL	IXYS	MOSFET N-CH 1000V 800MA TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	800mA (Tj)	0V	4V @ 25µA	14.6 nC @ 5 V	325 pF @ 25 V	±20V	Depletion Mode	60W (Tc)	21Ohm @ 400mA, 0V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PMPB09R1XNX	Nexperia USA Inc.	SMALL SIGNAL MOSFETS FOR PORTABL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 21W (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 9.3A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN2020M-6 Package / Case: 6-UDFN Exposed Pad	Package: -	Stock9,513	MOSFET (Metal Oxide)	30 V	9.3A (Ta)	1.8V, 4.5V	900mV @ 250µA	12.2 nC @ 4.5 V	940 pF @ 15 V	±12V	-	1.5W (Ta), 21W (Tc)	11.2mOhm @ 9.3A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN2020M-6	6-UDFN Exposed Pad
BSC011N03LSATMA1	Infineon Technologies	MOSFET N-CH 30V 37A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	Package: -	Stock125,160	MOSFET (Metal Oxide)	30 V	37A (Ta), 100A (Tc)	4.5V, 10V	2.2V @ 250µA	72 nC @ 10 V	4700 pF @ 15 V	±20V	-	2.5W (Ta), 96W (Tc)	1.1mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
NVMFS6H818NLT1G	onsemi	MOSFET N-CH 80V 22A/135A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 190µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 140W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock8,418	MOSFET (Metal Oxide)	80 V	22A (Ta), 135A (Tc)	4.5V, 10V	2V @ 190µA	64 nC @ 10 V	3844 pF @ 40 V	±20V	-	3.8W (Ta), 140W (Tc)	3.2mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
NTMYS2D9N04CLTWG	onsemi	MOSFET N-CH 40V 27A/110A 4LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Request a Quote	MOSFET (Metal Oxide)	40 V	27A (Ta), 110A (Tc)	4.5V, 10V	2V @ 11µA	35 nC @ 10 V	2100 pF @ 20 V	±20V	-	3.7W (Ta), 68W (Tc)	2.8mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
APT5018BFLLG	Microchip Technology	MOSFET N-CH 500V 27A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	5V @ 1mA	58 nC @ 10 V	2596 pF @ 25 V	-	-	-	180mOhm @ 13.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
2N7002KA-TP	Micro Commercial Co	MOSFET N-CH 60V 340MA SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 340mA (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 350mW Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock8,700	MOSFET (Metal Oxide)	60 V	340mA (Tj)	4.5V, 10V	2.5V @ 250µA	-	40 pF @ 10 V	±20V	-	350mW	5Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIHD14N60ET1-GE3	Vishay Siliconix	N-CHANNEL 600V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 147W (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock4,932	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4V @ 250µA	64 nC @ 10 V	1205 pF @ 100 V	±30V	-	147W (Tc)	309mOhm @ 7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHP35N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 32A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 97mOhm @ 17A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Stock2,850	MOSFET (Metal Oxide)	600 V	32A (Tc)	10V	4V @ 250µA	134 nC @ 10 V	2568 pF @ 100 V	±30V	-	250W (Tc)	97mOhm @ 17A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3