Page 57 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

NTB6411ANG
ON Semiconductor

MOSFET N-CH 100V 72A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,944
IRFU214BTU_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 250V 2.2A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock2,016
AO4456
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 20A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock1,727,148
HUFA76429P3
Fairchild/ON Semiconductor

MOSFET N-CH 60V 47A TO-220AB

Package: TO-220-3

Stock6,128
FQI5N40TU
Fairchild/ON Semiconductor

MOSFET N-CH 400V 4.5A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,480
HTNFET-TC
Honeywell Microelectronics & Precision Sensors

MOSFET N-CH 55V 4-PIN

Package: -

Stock5,920
IXFK120N25P
IXYS

MOSFET N-CH 250V 120A TO-264

Package: TO-264-3, TO-264AA

Stock7,104
IXFH230N10T
IXYS

MOSFET N-CH 100V 230A TO-247

Package: TO-247-3

Stock3,152
SKI03063
Sanken

MOSFET N-CH 30V 40A TO-263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,792
IRLU3110ZPBF
Infineon Technologies

MOSFET N-CH 100V 42A IPAK

Package: TO-251-3 Short Leads, IPak, TO-251AA

Stock4,384
AO4409
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 15A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock119,531,928
STS9NH3LL
STMicroelectronics

MOSFET N-CH 30V 9A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock413,220
IRFS7430TRLPBF
Infineon Technologies

MOSFET N-CH 40V 409A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock24,564
BSS159NH6327XTSA2
Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

Package: TO-236-3, SC-59, SOT-23-3

Stock29,886
IRFP2907ZPBF
Infineon Technologies

MOSFET N-CH 75V 90A TO-247AC

Package: TO-247-3

Stock6,528
MCAC50P03-TP
Micro Commercial Co

MOSFET N-CH DFN5060

Package: -

Request a Quote
RJK03B9DPA-WS-J53
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
IRFP4668PBFXKMA1
Infineon Technologies

TRENCH >=100V PG-TO247-3

Package: -

Stock1,188
IPB80P04P4L04ATMA2
Infineon Technologies

MOSFET P-CH 40V 80A TO263-3

Package: -

Stock23,196
NVHL027N65S3F
onsemi

MOSFET N-CH 650V 75A TO247-3

Package: -

Stock792

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
NTB6411ANG	ON Semiconductor	MOSFET N-CH 100V 72A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 217W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 72A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,944	MOSFET (Metal Oxide)	100V	77A (Tc)	10V	4V @ 250µA	100nC @ 10V	3700pF @ 25V	±20V	-	217W (Tc)	14 mOhm @ 72A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFU214BTU_FP001	Fairchild/ON Semiconductor	MOSFET N-CH 250V 2.2A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-Pak Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock2,016	MOSFET (Metal Oxide)	250V	2.2A (Tc)	10V	4V @ 250µA	10.5nC @ 10V	275pF @ 25V	±30V	-	2.5W (Ta), 25W (Tc)	2 Ohm @ 1.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I-Pak	TO-251-3 Short Leads, IPak, TO-251AA
AO4456	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 20A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock1,727,148	MOSFET (Metal Oxide)	30V	20A (Tc)	4.5V, 10V	2.4V @ 250µA	95nC @ 10V	5185pF @ 15V	±12V	Schottky Diode (Body)	3.1W (Ta)	4.6 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
HUFA76429P3	Fairchild/ON Semiconductor	MOSFET N-CH 60V 47A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 47A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock6,128	MOSFET (Metal Oxide)	60V	47A (Tc)	4.5V, 10V	3V @ 250µA	46nC @ 10V	1480pF @ 25V	±16V	-	110W (Tc)	22 mOhm @ 47A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FQI5N40TU	Fairchild/ON Semiconductor	MOSFET N-CH 400V 4.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 70W (Tc) Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,480	MOSFET (Metal Oxide)	400V	4.5A (Tc)	10V	5V @ 250µA	13nC @ 10V	460pF @ 25V	±30V	-	3.13W (Ta), 70W (Tc)	1.6 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
HTNFET-TC	Honeywell Microelectronics & Precision Sensors	MOSFET N-CH 55V 4-PIN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 28V Vgs (Max): 10V FET Feature: - Power Dissipation (Max): 50W (Tj) Rds On (Max) @ Id, Vgs: 400 mOhm @ 100mA, 5V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: - Package / Case: -	Package: -	Stock5,920	MOSFET (Metal Oxide)	55V	-	5V	2.4V @ 100µA	4.3nC @ 5V	290pF @ 28V	10V	-	50W (Tj)	400 mOhm @ 100mA, 5V	-	Through Hole	-	-
IXFK120N25P	IXYS	MOSFET N-CH 250V 120A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 700W (Tc) Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock7,104	MOSFET (Metal Oxide)	250V	120A (Tc)	10V	5V @ 4mA	185nC @ 10V	8000pF @ 25V	±20V	-	700W (Tc)	24 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFH230N10T	IXYS	MOSFET N-CH 100V 230A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 15300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650W (Tc) Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock3,152	MOSFET (Metal Oxide)	100V	230A (Tc)	10V	4.5V @ 1mA	250nC @ 10V	15300pF @ 25V	±20V	-	650W (Tc)	4.7 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
SKI03063	Sanken	MOSFET N-CH 30V 40A TO-263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs: 24.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 39.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,792	MOSFET (Metal Oxide)	30V	40A (Tc)	4.5V, 10V	2.5V @ 350µA	24.6nC @ 10V	1480pF @ 15V	±20V	-	64W (Tc)	6.5 mOhm @ 39.5A, 10V	150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLU3110ZPBF	Infineon Technologies	MOSFET N-CH 100V 42A IPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 14 mOhm @ 38A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: IPAK (TO-251) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	Package: TO-251-3 Short Leads, IPak, TO-251AA	Stock4,384	MOSFET (Metal Oxide)	100V	42A (Tc)	4.5V, 10V	2.5V @ 100µA	48nC @ 4.5V	3980pF @ 25V	±16V	-	140W (Tc)	14 mOhm @ 38A, 10V	-55°C ~ 175°C (TJ)	Through Hole	IPAK (TO-251)	TO-251-3 Short Leads, IPak, TO-251AA
AO4409	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 30V 15A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock119,531,928	MOSFET (Metal Oxide)	30V	15A (Ta)	4.5V, 10V	2.7V @ 250µA	120nC @ 10V	6400pF @ 15V	±20V	-	3.1W (Ta)	7.5 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STS9NH3LL	STMicroelectronics	MOSFET N-CH 30V 9A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock413,220	MOSFET (Metal Oxide)	30V	9A (Tc)	4.5V, 10V	1V @ 250µA	10nC @ 4.5V	857pF @ 25V	±16V	-	2.5W (Tc)	22 mOhm @ 4.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
IRFS7430TRLPBF	Infineon Technologies	MOSFET N-CH 40V 409A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock24,564	MOSFET (Metal Oxide)	40V	195A (Tc)	6V, 10V	3.9V @ 250µA	460nC @ 10V	14240pF @ 25V	±20V	-	375W (Tc)	1.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BSS159NH6327XTSA2	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 2.4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 25V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock29,886	MOSFET (Metal Oxide)	60V	230mA (Ta)	0V, 10V	2.4V @ 26µA	1.4nC @ 5V	39pF @ 25V	±20V	Depletion Mode	360mW (Ta)	3.5 Ohm @ 160mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT23-3	TO-236-3, SC-59, SOT-23-3
IRFP2907ZPBF	Infineon Technologies	MOSFET N-CH 75V 90A TO-247AC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 90A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: TO-247-3	Stock6,528	MOSFET (Metal Oxide)	75V	90A (Tc)	10V	4V @ 250µA	270nC @ 10V	7500pF @ 25V	±20V	-	310W (Tc)	4.5 mOhm @ 90A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
MCAC50P03-TP	Micro Commercial Co	MOSFET N-CH DFN5060 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5060 Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	50A	4.5V, 10V	2.5V @ 250µA	107 nC @ 10 V	7394 pF @ 15 V	±20V	-	45W	6.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DFN5060	8-PowerTDFN
RJK03B9DPA-WS-J53	Renesas Electronics Corporation	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFP4668PBFXKMA1	Infineon Technologies	TRENCH >=100V PG-TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 520W Rds On (Max) @ Id, Vgs: 9.7mOhm @ 81A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AC Package / Case: TO-247-3	Package: -	Stock1,188	MOSFET (Metal Oxide)	200 V	130A (Tc)	10V	5V @ 250µA	241 nC @ 10 V	10720 pF @ 50 V	±30V	-	520W	9.7mOhm @ 81A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
IPB80P04P4L04ATMA2	Infineon Technologies	MOSFET P-CH 40V 80A TO263-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock23,196	MOSFET (Metal Oxide)	40 V	80A (Tc)	4.5V, 10V	2.2V @ 250µA	176 nC @ 10 V	11570 pF @ 25 V	+5V, -16V	-	125W (Tc)	4.7mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NVHL027N65S3F	onsemi	MOSFET N-CH 650V 75A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Package: -	Stock792	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	5V @ 3mA	227 nC @ 10 V	7780 pF @ 400 V	±30V	-	595W (Tc)	27.4mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247-3
IPDQ65R080CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 630µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 223W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	Package: -	Stock1,500	MOSFET (Metal Oxide)	650 V	36A (Tc)	10V	4.5V @ 630µA	50 nC @ 10 V	2513 pF @ 400 V	±20V	-	223W (Tc)	80mOhm @ 12.5A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
DMN60H080DS-7	Diodes Incorporated	MOSFET N-CH 600V 80MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 80mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 100Ohm @ 60mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock189,288	MOSFET (Metal Oxide)	600 V	80mA (Ta)	4.5V, 10V	3V @ 250µA	1.7 nC @ 10 V	25 pF @ 25 V	±20V	-	1.1W (Ta)	100Ohm @ 60mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
SQS462EN-T1_BE3	Vishay Siliconix	N-CHANNEL 60-V (D-S) 175C MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock45,180	MOSFET (Metal Oxide)	60 V	8A (Tc)	4.5V, 10V	2.5V @ 250µA	12 nC @ 10 V	470 pF @ 25 V	±20V	-	33W (Tc)	63mOhm @ 4.3A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
GSFU6522	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 20A, 650V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Stock3,000	MOSFET (Metal Oxide)	650 V	20A (Tc)	10V	4V @ 250µA	70 nC @ 10 V	2100 pF @ 100 V	±30V	-	45W (Tc)	190mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
DMTH69M8LFVWQ-7	Diodes Incorporated	MOSFET BVDSS: 41V-60V POWERDI333 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Stock5,700	MOSFET (Metal Oxide)	60 V	15.9A (Ta), 45.4A (Tc)	4.5V, 10V	3V @ 250µA	33.5 nC @ 10 V	1925 pF @ 30 V	±16V	-	3.6W (Ta), 29.4W (Tc)	9.5mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
AOTF66920L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 100V 22.5/41A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 27.5W (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	22.5A (Ta), 41A (Tc)	4.5V, 10V	2.5V @ 250µA	50 nC @ 10 V	2500 pF @ 50 V	±20V	-	8.3W (Ta), 27.5W (Tc)	8.2mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
NVMTSC1D3N08M7TXG	onsemi	MOSFET N-CH 80V 46A/348A 8DFNW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 348A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14530 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5.1W (Ta), 287W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	Package: -	Stock8,943	MOSFET (Metal Oxide)	80 V	46A (Ta), 348A (Tc)	10V	4V @ 250µA	196 nC @ 10 V	14530 pF @ 40 V	±20V	-	5.1W (Ta), 287W (Tc)	1.25mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
GSFF0308	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 780MA, 30V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 780mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 446mW (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-723 Package / Case: SOT-723	Package: -	Stock47,670	MOSFET (Metal Oxide)	30 V	780mA (Ta)	2.5V, 4.5V	1.2V @ 250µA	5.2 nC @ 4.5 V	146 pF @ 15 V	±12V	-	446mW (Ta)	450mOhm @ 300mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-723	SOT-723