Page 56 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IPP037N08N3GE8181XKSA1
Infineon Technologies

MOSFET N-CH 80V 100A TO220-3

Package: TO-220-3

Stock2,560
IXFD26N60Q-8XQ
IXYS

MOSFET N-CH

Package: -

Stock3,168
BUK653R4-40C,127
NXP

MOSFET N-CH 40V 100A TO220AB

Package: TO-220-3

Stock2,576
SPD02N50C3BTMA1
Infineon Technologies

LOW POWER_LEGACY

Package: -

Stock3,664
IXFH58N20Q
IXYS

MOSFET N-CH 200V 58A TO-247AD

Package: TO-247-3

Stock422,280
AOI4S60
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 4A TO251A

Package: TO-251-3 Stub Leads, IPak

Stock2,752
AO4443
Alpha & Omega Semiconductor Inc.

MOSFET P-CH 40V 6A 8SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock39,960
STP140NF55
STMicroelectronics

MOSFET N-CH 55V 80A TO-220

Package: TO-220-3

Stock722,736
IXFN80N50Q3
IXYS

MOSFET N-CH 500V 63A SOT-227

Package: SOT-227-4, miniBLOC

Stock6,128
IRL530NPBF
Infineon Technologies

MOSFET N-CH 100V 17A TO-220AB

Package: TO-220-3

Stock20,880
STB34NM60ND
STMicroelectronics

MOSFET N-CH 600V 29A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock28,920
IPP60R099C7XKSA1
Infineon Technologies

MOSFET N-CH 600V 22A TO220-3

Package: TO-220-3

Stock6,456
FDC365P
Fairchild/ON Semiconductor

MOSFET P-CH 35V 4.3A 6-SSOT

Package: SOT-23-6 Thin, TSOT-23-6

Stock220,632
SIHP24N65E-E3
Vishay Siliconix

MOSFET N-CH 650V 24A TO220AB

Package: TO-220-3

Stock23,016
PSMN9R8-30MLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 50A LFPAK33

Package: SOT-1210, 8-LFPAK33 (5-Lead)

Stock94,614
FCPF260N60E
Fairchild/ON Semiconductor

MOSFET N CH 600V 15A TO-220F

Package: TO-220-3 Full Pack

Stock4,144
IRFR3504ZTRPBF
Infineon Technologies

MOSFET N-CH 40V 42A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,632
EPC2019
EPC

TRANS GAN 200V 8.5A BUMPED DIE

Package: Die

Stock279,426
DMP6023LEQ-13
Diodes Incorporated

MOSFET P-CH 60V 7A SOT223 T&R

Package: -

Stock11,592
GSFD4005
Good-Ark Semiconductor

MOSFET, P-CH, SINGLE, -88.00A, -

Package: -

Stock7,500

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPP037N08N3GE8181XKSA1	Infineon Technologies	MOSFET N-CH 80V 100A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 155µA Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8110pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 3.75 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock2,560	MOSFET (Metal Oxide)	80V	100A (Tc)	6V, 10V	3.5V @ 155µA	117nC @ 10V	8110pF @ 40V	±20V	-	214W (Tc)	3.75 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
IXFD26N60Q-8XQ	IXYS	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,168	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BUK653R4-40C,127	NXP	MOSFET N-CH 40V 100A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8020pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 204W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock2,576	MOSFET (Metal Oxide)	40V	100A (Tc)	4.5V, 10V	2.8V @ 1mA	125nC @ 10V	8020pF @ 25V	±16V	-	204W (Tc)	3.6 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
SPD02N50C3BTMA1	Infineon Technologies	LOW POWER_LEGACY FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,664	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH58N20Q	IXYS	MOSFET N-CH 200V 58A TO-247AD FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 29A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247AD (IXFH) Package / Case: TO-247-3	Package: TO-247-3	Stock422,280	MOSFET (Metal Oxide)	200V	58A (Tc)	10V	4V @ 4mA	140nC @ 10V	3600pF @ 25V	±20V	-	300W (Tc)	40 mOhm @ 29A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247AD (IXFH)	TO-247-3
AOI4S60	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 600V 4A TO251A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251A Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock2,752	MOSFET (Metal Oxide)	600V	4A (Tc)	10V	4.1V @ 250µA	6nC @ 10V	263pF @ 100V	±30V	-	56.8W (Tc)	900 mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-251A	TO-251-3 Stub Leads, IPak
AO4443	Alpha & Omega Semiconductor Inc.	MOSFET P-CH 40V 6A 8SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 42 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOIC Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock39,960	MOSFET (Metal Oxide)	40V	6A (Ta)	4.5V, 10V	2.6V @ 250µA	22nC @ 10V	1175pF @ 20V	±20V	-	3.1W (Ta)	42 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC	8-SOIC (0.154", 3.90mm Width)
STP140NF55	STMicroelectronics	MOSFET N-CH 55V 80A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock722,736	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	142nC @ 10V	5300pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IXFN80N50Q3	IXYS	MOSFET N-CH 500V 63A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 6.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 780W (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227B Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock6,128	MOSFET (Metal Oxide)	500V	63A	10V	6.5V @ 8mA	200nC @ 10V	10000pF @ 25V	±30V	-	780W (Tc)	65 mOhm @ 40A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227B	SOT-227-4, miniBLOC
IRL530NPBF	Infineon Technologies	MOSFET N-CH 100V 17A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock20,880	MOSFET (Metal Oxide)	100V	17A (Tc)	4V, 10V	2V @ 250µA	34nC @ 5V	800pF @ 25V	±16V	-	79W (Tc)	100 mOhm @ 9A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB34NM60ND	STMicroelectronics	MOSFET N-CH 600V 29A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 14.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock28,920	MOSFET (Metal Oxide)	600V	29A (Tc)	10V	5V @ 250µA	80.4nC @ 10V	2785pF @ 50V	±25V	-	190W (Tc)	110 mOhm @ 14.5A, 10V	150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPP60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 22A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 490µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1819pF @ 400V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 99 mOhm @ 9.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Package: TO-220-3	Stock6,456	MOSFET (Metal Oxide)	600V	22A (Tc)	10V	4V @ 490µA	42nC @ 10V	1819pF @ 400V	±20V	-	110W (Tc)	99 mOhm @ 9.7A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
FDC365P	Fairchild/ON Semiconductor	MOSFET P-CH 35V 4.3A 6-SSOT FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-SSOT Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock220,632	MOSFET (Metal Oxide)	35V	4.3A (Ta)	4.5V, 10V	3V @ 250µA	15nC @ 10V	705pF @ 20V	±20V	-	1.6W (Ta)	55 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-SSOT	SOT-23-6 Thin, TSOT-23-6
SIHP24N65E-E3	Vishay Siliconix	MOSFET N-CH 650V 24A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock23,016	MOSFET (Metal Oxide)	650V	24A (Tc)	10V	4V @ 250µA	122nC @ 10V	2740pF @ 100V	±30V	-	250W (Tc)	145 mOhm @ 12A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
PSMN9R8-30MLC,115	Nexperia USA Inc.	MOSFET N-CH 30V 50A LFPAK33 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.95V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 9.8 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK33 Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)	Package: SOT-1210, 8-LFPAK33 (5-Lead)	Stock94,614	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	1.95V @ 1mA	10.9nC @ 10V	690pF @ 15V	±20V	-	45W (Tc)	9.8 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK33	SOT-1210, 8-LFPAK33 (5-Lead)
FCPF260N60E	Fairchild/ON Semiconductor	MOSFET N CH 600V 15A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3 Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,144	MOSFET (Metal Oxide)	600V	15A (Tc)	10V	3.5V @ 250µA	62nC @ 10V	2500pF @ 25V	±20V	-	36W (Tc)	260 mOhm @ 7.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220F-3	TO-220-3 Full Pack
IRFR3504ZTRPBF	Infineon Technologies	MOSFET N-CH 40V 42A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,632	MOSFET (Metal Oxide)	40V	42A (Tc)	10V	4V @ 250µA	45nC @ 10V	1510pF @ 25V	±20V	-	90W (Tc)	9 mOhm @ 42A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
EPC2019	EPC	TRANS GAN 200V 8.5A BUMPED DIE FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V Vgs (Max): +6V, -4V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 5V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: Die	Stock279,426	GaNFET (Gallium Nitride)	200V	8.5A (Ta)	5V	2.5V @ 1.5mA	2.5nC @ 5V	270pF @ 100V	+6V, -4V	-	-	50 mOhm @ 7A, 5V	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
DMP6023LEQ-13	Diodes Incorporated	MOSFET P-CH 60V 7A SOT223 T&R FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2569 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 17.3W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223-3 Package / Case: TO-261-4, TO-261AA	Package: -	Stock11,592	MOSFET (Metal Oxide)	60 V	7A (Ta), 18.2A (Tc)	4.5V, 10V	3V @ 250µA	53.1 nC @ 10 V	2569 pF @ 30 V	±20V	-	2W (Ta), 17.3W (Tc)	28mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223-3	TO-261-4, TO-261AA
GSFD4005	Good-Ark Semiconductor	MOSFET, P-CH, SINGLE, -88.00A, - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 88A (Tj) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tj) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,500	MOSFET (Metal Oxide)	40 V	88A (Tj)	4.5V, 10V	2.8V @ 250µA	119 nC @ 10 V	6800 pF @ 20 V	±20V	-	124W (Tj)	5mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
NTMFSC0D9N04CL	onsemi	MOSFET N-CH 40V 8PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 313A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Ta) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-PowerTDFN	Package: -	Stock63	MOSFET (Metal Oxide)	40 V	313A (Tc)	4.5V, 10V	2V @ 250µA	143 nC @ 10 V	8500 pF @ 20 V	±20V	-	83W (Ta)	-	-55°C ~ 150°C (TA)	Surface Mount	8-PQFN (5x6)	8-PowerTDFN
SIA456DJ-T3-GE3	Vishay Siliconix	MOSFET N-CH 200V 1.1A/2.6A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 100 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 1.38Ohm @ 750mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	Package: -	Request a Quote	MOSFET (Metal Oxide)	200 V	1.1A (Ta), 2.6A (Tc)	1.8V, 4.5V	1.4V @ 250µA	14.5 nC @ 10 V	350 pF @ 100 V	±16V	-	3.5W (Ta), 19W (Tc)	1.38Ohm @ 750mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SC-70-6	PowerPAK® SC-70-6
2SJ317NYTR-E	Renesas Electronics Corporation	P-CHANNEL SMALL SIGNAL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFT88N30P-TRL	IXYS	MOSFET N-CH 300V 88A TO268 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-268 Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	88A (Tc)	10V	5V @ 4mA	180 nC @ 10 V	6300 pF @ 25 V	±20V	-	600W (Tc)	40mOhm @ 44A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-268	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
SCT4062KEC11	Rohm Semiconductor	1200V, 62M, 3-PIN THD, TRENCH-ST FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 115W Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	Package: -	Stock14,070	SiCFET (Silicon Carbide)	1200 V	26A (Tc)	18V	4.8V @ 6.45mA	64 nC @ 18 V	1498 pF @ 800 V	+21V, -4V	-	115W	81mOhm @ 12A, 18V	175°C (TJ)	Through Hole	TO-247N	TO-247-3
FDBL86563-F085	onsemi	MOSFET N-CH 60V 240A 8HPSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HPSOF Package / Case: 8-PowerSFN	Package: -	Stock10,728	MOSFET (Metal Oxide)	60 V	240A (Tc)	10V	4V @ 250µA	169 nC @ 10 V	10300 pF @ 30 V	±20V	-	357W (Tj)	1.5mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-HPSOF	8-PowerSFN
DMTH8008LPSWQ-13	Diodes Incorporated	MOSFET BVDSS: 61V~100V POWERDI50 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 41.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2345 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI5060-8 (Type UX) Package / Case: 8-PowerTDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	91A (Tc)	4.5V, 10V	2.8V @ 1mA	41.2 nC @ 10 V	2345 pF @ 40 V	±20V	-	1.6W (Ta), 100W (Tc)	7.8mOhm @ 14A, 10V	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	PowerDI5060-8 (Type UX)	8-PowerTDFN
IRLML6402TR	Infineon Technologies	MOSFET P-CH 20V 3.7A SOT-23 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 10 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro3™/SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	3.7A (Ta)	-	1.2V @ 250µA	12 nC @ 5 V	633 pF @ 10 V	-	-	-	65mOhm @ 3.7A, 4.5V	-	Surface Mount	Micro3™/SOT-23	TO-236-3, SC-59, SOT-23-3