Page 79 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AUIRLS3034-7P
Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7P

Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

Stock127,800
SPI80N03S2-03
Infineon Technologies

MOSFET N-CH 30V 80A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock2,624
2SK3745LS
ON Semiconductor

MOSFET N-CH 1500V 2A TO-220FI

Package: TO-220-3 Full Pack

Stock390,000
FQP2NA90
Fairchild/ON Semiconductor

MOSFET N-CH 900V 2.8A TO-220

Package: TO-220-3

Stock103,464
FQD5N50CTF
Fairchild/ON Semiconductor

MOSFET N-CH 500V 4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock16,416
FDR6580
Fairchild/ON Semiconductor

MOSFET N-CH 20V 11.2A SSOT-8

Package: 8-SMD, Gull Wing

Stock25,680
HAT2096H-EL-E
Renesas Electronics America

MOSFET N-CH 30V 40A LFPAK

Package: SC-100, SOT-669

Stock654,000
IRFI740GLC
Vishay Siliconix

MOSFET N-CH 400V 5.7A TO220FP

Package: TO-220-3 Full Pack, Isolated Tab

Stock6,704
IPD050N03LGBTMA1
Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,064
IXFK27N80
IXYS

MOSFET N-CH 800V 27A TO-264AA

Package: TO-264-3, TO-264AA

Stock40,884
IXFK170N10P
IXYS

MOSFET N-CH 100V 170A TO-264

Package: TO-264-3, TO-264AA

Stock2,032
SI7302DN-T1-E3
Vishay Siliconix

MOSFET N-CH 220V 8.4A 1212-8

Package: PowerPAK? 1212-8

Stock8,508
SQD50N05-11L_GE3
Vishay Siliconix

MOSFET N-CH 50V 50A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,752
NTMFS4926NT3G
ON Semiconductor

MOSFET N-CH 30V 44A SO-8FL

Package: 8-PowerTDFN, 5 Leads

Stock2,944
SSM3K56FS,LF
Toshiba Semiconductor and Storage

MOSFET N-CH 20V 0.8A SSM

Package: SC-75, SOT-416

Stock5,264
FDP5N60NZ
Fairchild/ON Semiconductor

MOSFET N-CH 600V 4.5A TO-220-3

Package: TO-220-3

Stock60,012
STD11NM60ND
STMicroelectronics

MOSFET N-CH 600V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock132,252
STD110N8F6
STMicroelectronics

MOSFET N-CH 80V 80A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,992
SSI4N60BTU
Fairchild Semiconductor

N-CHANNEL POWER MOSFET

Package: -

Request a Quote
G86N06K
Goford Semiconductor

N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,

Package: -

Stock14,955

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AUIRLS3034-7P	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7P FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 380W (Tc) Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 200A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA	Stock127,800	MOSFET (Metal Oxide)	40V	240A (Tc)	4.5V, 10V	2.5V @ 250µA	180nC @ 4.5V	10990pF @ 40V	±20V	-	380W (Tc)	1.4 mOhm @ 200A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
SPI80N03S2-03	Infineon Technologies	MOSFET N-CH 30V 80A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7020pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3-1 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock2,624	MOSFET (Metal Oxide)	30V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	7020pF @ 25V	±20V	-	300W (Tc)	3.4 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3-1	TO-262-3 Long Leads, I2Pak, TO-262AA
2SK3745LS	ON Semiconductor	MOSFET N-CH 1500V 2A TO-220FI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1500V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock390,000	MOSFET (Metal Oxide)	1500V	2A (Ta)	10V	-	37.5nC @ 10V	380pF @ 30V	±20V	-	2W (Ta), 35W (Tc)	13 Ohm @ 1A, 10V	150°C (TJ)	Through Hole	TO-220FI(LS)	TO-220-3 Full Pack
FQP2NA90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 2.8A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock103,464	MOSFET (Metal Oxide)	900V	2.8A (Tc)	10V	5V @ 250µA	20nC @ 10V	680pF @ 25V	±30V	-	107W (Tc)	5.8 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
FQD5N50CTF	Fairchild/ON Semiconductor	MOSFET N-CH 500V 4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock16,416	MOSFET (Metal Oxide)	500V	4A (Tc)	10V	4V @ 250µA	24nC @ 10V	625pF @ 25V	±30V	-	2.5W (Ta), 48W (Tc)	1.4 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
FDR6580	Fairchild/ON Semiconductor	MOSFET N-CH 20V 11.2A SSOT-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3829pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9 mOhm @ 11.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-8 Package / Case: 8-SMD, Gull Wing	Package: 8-SMD, Gull Wing	Stock25,680	MOSFET (Metal Oxide)	20V	11.2A (Ta)	2.5V, 4.5V	1.5V @ 250µA	48nC @ 4.5V	3829pF @ 10V	±8V	-	1.8W (Ta)	9 mOhm @ 11.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-8	8-SMD, Gull Wing
HAT2096H-EL-E	Renesas Electronics America	MOSFET N-CH 30V 40A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock654,000	MOSFET (Metal Oxide)	30V	40A (Ta)	4.5V, 10V	-	40nC @ 10V	2200pF @ 10V	±20V	-	20W (Tc)	5.3 mOhm @ 20A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
IRFI740GLC	Vishay Siliconix	MOSFET N-CH 400V 5.7A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 3.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock6,704	MOSFET (Metal Oxide)	400V	5.7A (Tc)	10V	4V @ 250µA	39nC @ 10V	1100pF @ 25V	±30V	-	40W (Tc)	550 mOhm @ 3.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IPD050N03LGBTMA1	Infineon Technologies	MOSFET N-CH 30V 50A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,064	MOSFET (Metal Oxide)	30V	50A (Tc)	4.5V, 10V	2.2V @ 250µA	31nC @ 10V	3200pF @ 15V	±20V	-	68W (Tc)	5 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-11	TO-252-3, DPak (2 Leads + Tab), SC-63
IXFK27N80	IXYS	MOSFET N-CH 800V 27A TO-264AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9740pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock40,884	MOSFET (Metal Oxide)	800V	27A (Tc)	10V	4.5V @ 8mA	400nC @ 10V	9740pF @ 25V	±20V	-	500W (Tc)	300 mOhm @ 13.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
IXFK170N10P	IXYS	MOSFET N-CH 100V 170A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 198nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 715W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	Package: TO-264-3, TO-264AA	Stock2,032	MOSFET (Metal Oxide)	100V	170A (Tc)	10V	5V @ 4mA	198nC @ 10V	6000pF @ 25V	±20V	-	715W (Tc)	9 mOhm @ 500mA, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-264AA (IXFK)	TO-264-3, TO-264AA
SI7302DN-T1-E3	Vishay Siliconix	MOSFET N-CH 220V 8.4A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 220V Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 645pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 2.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock8,508	MOSFET (Metal Oxide)	220V	8.4A (Tc)	4.5V, 10V	4V @ 250µA	21nC @ 10V	645pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	320 mOhm @ 2.3A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
SQD50N05-11L_GE3	Vishay Siliconix	MOSFET N-CH 50V 50A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2106pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 11 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,752	MOSFET (Metal Oxide)	50V	50A (Tc)	4.5V, 10V	2.5V @ 250µA	52nC @ 10V	2106pF @ 25V	±20V	-	75W (Tc)	11 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
NTMFS4926NT3G	ON Semiconductor	MOSFET N-CH 30V 44A SO-8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1004pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 920mW (Ta), 21.6W (Tc) Rds On (Max) @ Id, Vgs: 7 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: 8-PowerTDFN, 5 Leads	Stock2,944	MOSFET (Metal Oxide)	30V	9A (Ta), 44A (Tc)	4.5V, 10V	2.2V @ 250µA	17.3nC @ 10V	1004pF @ 15V	±20V	-	920mW (Ta), 21.6W (Tc)	7 mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
SSM3K56FS,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 0.8A SSM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock5,264	MOSFET (Metal Oxide)	20V	800mA (Ta)	1.5V, 4.5V	1V @ 1mA	1nC @ 4.5V	55pF @ 10V	±8V	-	150mW (Ta)	235 mOhm @ 800mA, 4.5V	150°C (TJ)	Surface Mount	SSM	SC-75, SOT-416
FDP5N60NZ	Fairchild/ON Semiconductor	MOSFET N-CH 600V 4.5A TO-220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 2 Ohm @ 2.25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock60,012	MOSFET (Metal Oxide)	600V	4.5A (Tc)	10V	5V @ 250µA	13nC @ 10V	600pF @ 25V	±25V	-	100W (Tc)	2 Ohm @ 2.25A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
STD11NM60ND	STMicroelectronics	MOSFET N-CH 600V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock132,252	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	5V @ 250µA	30nC @ 10V	850pF @ 50V	±25V	-	90W (Tc)	450 mOhm @ 5A, 10V	150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
STD110N8F6	STMicroelectronics	MOSFET N-CH 80V 80A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9130pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,992	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4.5V @ 250µA	150nC @ 10V	9130pF @ 40V	±20V	-	167W (Tc)	6.5 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
SSI4N60BTU	Fairchild Semiconductor	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.13W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 (I2PAK) Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	4A (Tc)	10V	4V @ 250µA	29 nC @ 10 V	920 pF @ 25 V	±30V	-	3.13W (Ta), 100W (Tc)	2.5Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-262 (I2PAK)	TO-262-3 Long Leads, I2PAK, TO-262AA
G86N06K	Goford Semiconductor	N60V,RD(MAX)<8.4M@10V,VTH2V~4V , FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,955	MOSFET (Metal Oxide)	60 V	80A (Tc)	10V	4V @ 250µA	77 nC @ 10 V	2860 pF @ 25 V	±20V	-	110W (Tc)	8mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
FSS133-TL-E	Sanyo	MOSFET P-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLML9301TRPBF-ML	MOSLEADER	P -30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PJA3460_R1_00001	Panjit International Inc.	SOT-23, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock97,257	MOSFET (Metal Oxide)	60 V	2.5A (Ta)	4.5V, 10V	2.5V @ 250µA	9.3 nC @ 10 V	509 pF @ 15 V	±20V	-	1.25W (Ta)	75mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3
SIS184LDN-T1-GE3	Vishay Siliconix	N-CHANNEL 60 V (D-S) MOSFET POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8	Package: -	Stock17,901	MOSFET (Metal Oxide)	60 V	18.7A (Ta), 69.4A (Tc)	4.5V, 10V	3V @ 250µA	41 nC @ 10 V	1950 pF @ 30 V	±20V	-	3.7W (Ta), 52W (Tc)	5.4mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8	PowerPAK® 1212-8
AONR36328	Alpha & Omega Semiconductor Inc.	N FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 24W (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15A (Ta), 20A (Tc)	4.5V, 10V	2.1V @ 250µA	20 nC @ 10 V	700 pF @ 15 V	±16V	-	3.1W (Ta), 24W (Tc)	8.4mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-PowerVDFN
ISC058N04NM5ATMA1	Infineon Technologies	40V 5.8M OPTIMOS MOSFET SUPERSO8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	Package: -	Stock83,721	MOSFET (Metal Oxide)	40 V	17A (Ta), 63A (Tc)	7V, 10V	3.4V @ 13µA	16 nC @ 10 V	1100 pF @ 20 V	±20V	-	3W (Ta), 42W (Tc)	5.8mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
PJP100P03_T0_00001	Panjit International Inc.	30V P-CHANNEL ENHANCEMENT MODE M FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 119W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	15.8A (Ta), 100A (Tc)	4.5V, 10V	2.5V @ 250µA	107 nC @ 10 V	6067 pF @ 25 V	±20V	-	2W (Ta), 119W (Tc)	5mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
SSFN4964	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 60.00A, 40 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 51W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PPAK (3.1x3.1) Package / Case: 8-PowerWDFN	Package: -	Stock17,970	MOSFET (Metal Oxide)	40 V	60A (Tc)	4.5V, 10V	2.5V @ 250µA	48 nC @ 10 V	2670 pF @ 20 V	±20V	-	51W (Tc)	6.5mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PPAK (3.1x3.1)	8-PowerWDFN