Page 80 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSO130N03MSGXUMA1
Infineon Technologies

MOSFET N-CH 30V 9A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock4,624
AOTF10N50FD_001
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 10A TO220F

Package: TO-220-3 Full Pack

Stock2,848
AOY526
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

Package: TO-251-3 Stub Leads, IPak

Stock4,176
APTC60SKM35T1G
Microsemi Corporation

MOSFET N-CH 600V 72A SP1

Package: SP1

Stock2,448
NTD95N02RT4
ON Semiconductor

MOSFET N-CH 24V 12A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock7,712
PHP45NQ15T,127
NXP

MOSFET N-CH 150V 45.1A TO220AB

Package: TO-220-3

Stock7,200
ZVN4210GTC
Diodes Incorporated

MOSFET N-CH 100V 800MA SOT223

Package: TO-261-4, TO-261AA

Stock120,012
IPB60R600P6ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,216
IPC80N04S403ATMA1
Infineon Technologies

MOSFET N-CH 8TDSON

Package: 8-PowerVDFN

Stock5,024
BUK764R2-80E,118
Nexperia USA Inc.

MOSFET N-CH 80V 120A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,392
RJK1054DPB-00#J5
Renesas Electronics America

MOSFET N-CH 100V LFPAK

Package: SC-100, SOT-669

Stock4,048
AO3434
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.5A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock758,280
IXFP270N06T3
IXYS

60V/270A TRENCHT3 HIPERFET MOSFE

Package: TO-220-3

Stock7,760
STB11NM60FDT4
STMicroelectronics

MOSFET N-CH 600V 11A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock175,920
PSMN3R0-60ES,127
Nexperia USA Inc.

MOSFET N-CH 60V 100A I2PAK

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock35,964
DMN10H170SVTQ-7
Diodes Incorporated

MOSFET N-CH 100V 2.6A TSOT26

Package: SOT-23-6 Thin, TSOT-23-6

Stock26,850
IRFR420PBF
Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock14,700
BUK7Y3R1-80MX
Nexperia USA Inc.

BUK7Y3R1-80M/SOT669/LFPAK

Package: -

Request a Quote
NVBGS4D1N15MC
onsemi

MOSFET N-CH 150V 20A/185A D2PAK

Package: -

Stock1,122
SQJ146ELP-T1_GE3
Vishay Siliconix

MOSFET N-CH 40V 74A PPAK SO-8

Package: -

Stock9,000

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSO130N03MSGXUMA1	Infineon Technologies	MOSFET N-CH 30V 9A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 11.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock4,624	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	2V @ 250µA	17nC @ 10V	1300pF @ 15V	±20V	-	1.56W (Ta)	13 mOhm @ 11.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
AOTF10N50FD_001	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 500V 10A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,848	MOSFET (Metal Oxide)	500V	10A (Tc)	10V	4.2V @ 250µA	35nC @ 10V	1240pF @ 25V	±30V	-	50W (Tc)	750 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
AOY526	Alpha & Omega Semiconductor Inc.	MOSFET N-CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251B Package / Case: TO-251-3 Stub Leads, IPak	Package: TO-251-3 Stub Leads, IPak	Stock4,176	MOSFET (Metal Oxide)	30V	18A (Ta), 50A (Tc)	4.5V, 10V	2.4V @ 250µA	33nC @ 10V	1550pF @ 15V	±20V	-	2.5W (Ta), 50W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-251B	TO-251-3 Stub Leads, IPak
APTC60SKM35T1G	Microsemi Corporation	MOSFET N-CH 600V 72A SP1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 416W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	Package: SP1	Stock2,448	MOSFET (Metal Oxide)	600V	72A	10V	3.9V @ 5.4mA	518nC @ 10V	14000pF @ 25V	±20V	-	416W (Tc)	35 mOhm @ 72A, 10V	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
NTD95N02RT4	ON Semiconductor	MOSFET N-CH 24V 12A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.25W (Ta), 86W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock7,712	MOSFET (Metal Oxide)	24V	12A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	21nC @ 4.5V	2400pF @ 20V	±20V	-	1.25W (Ta), 86W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
PHP45NQ15T,127	NXP	MOSFET N-CH 150V 45.1A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 45.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 42 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,200	MOSFET (Metal Oxide)	150V	45.1A (Tc)	10V	4V @ 1mA	32nC @ 10V	1770pF @ 25V	±20V	-	230W (Tc)	42 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
ZVN4210GTC	Diodes Incorporated	MOSFET N-CH 100V 800MA SOT223 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock120,012	MOSFET (Metal Oxide)	100V	800mA (Ta)	5V, 10V	2.4V @ 1mA	-	100pF @ 25V	±20V	-	2W (Ta)	1.5 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPB60R600P6ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 557pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,216	MOSFET (Metal Oxide)	600V	7.3A (Tc)	10V	4.5V @ 200µA	12nC @ 10V	557pF @ 100V	±20V	-	63W (Tc)	600 mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC80N04S403ATMA1	Infineon Technologies	MOSFET N-CH 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5720pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-23 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,024	MOSFET (Metal Oxide)	40V	80A (Tc)	10V	4V @ 60µA	71nC @ 10V	5720pF @ 25V	±20V	-	100W (Tc)	3.3 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-23	8-PowerVDFN
BUK764R2-80E,118	Nexperia USA Inc.	MOSFET N-CH 80V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10426pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,392	MOSFET (Metal Oxide)	80V	120A (Tc)	10V	4V @ 1mA	136nC @ 10V	10426pF @ 25V	±20V	-	324W (Tc)	4.2 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RJK1054DPB-00#J5	Renesas Electronics America	MOSFET N-CH 100V LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 22 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock4,048	MOSFET (Metal Oxide)	100V	20A (Ta)	10V	-	27nC @ 10V	2000pF @ 10V	±20V	-	55W (Tc)	22 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	LFPAK	SC-100, SOT-669
AO3434	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 30V 3.5A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 52 mOhm @ 4.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3L Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock758,280	MOSFET (Metal Oxide)	30V	3.5A (Ta)	4.5V, 10V	1.8V @ 250µA	7.2nC @ 10V	340pF @ 15V	±20V	-	1W (Ta)	52 mOhm @ 4.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3L	TO-236-3, SC-59, SOT-23-3
IXFP270N06T3	IXYS	60V/270A TRENCHT3 HIPERFET MOSFE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 12600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock7,760	MOSFET (Metal Oxide)	60V	270A (Tc)	10V	4V @ 250µA	200nC @ 10V	12600pF @ 25V	±20V	-	480W (Tc)	3.1 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
STB11NM60FDT4	STMicroelectronics	MOSFET N-CH 600V 11A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock175,920	MOSFET (Metal Oxide)	600V	11A (Tc)	10V	5V @ 250µA	40nC @ 10V	900pF @ 25V	±30V	-	160W (Tc)	450 mOhm @ 5.5A, 10V	-	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN3R0-60ES,127	Nexperia USA Inc.	MOSFET N-CH 60V 100A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 3 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I2PAK Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock35,964	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 1mA	130nC @ 10V	8079pF @ 30V	±20V	-	306W (Tc)	3 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Through Hole	I2PAK	TO-262-3 Long Leads, I2Pak, TO-262AA
DMN10H170SVTQ-7	Diodes Incorporated	MOSFET N-CH 100V 2.6A TSOT26 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 160 mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSOT-26 Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock26,850	MOSFET (Metal Oxide)	100V	2.6A (Ta)	4.5V, 10V	3V @ 250µA	9.7nC @ 10V	1167pF @ 25V	±20V	-	1.2W (Ta)	160 mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TSOT-26	SOT-23-6 Thin, TSOT-23-6
IRFR420PBF	Vishay Siliconix	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock14,700	MOSFET (Metal Oxide)	500V	2.4A (Tc)	10V	4V @ 250µA	19nC @ 10V	360pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	3 Ohm @ 1.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7Y3R1-80MX	Nexperia USA Inc.	BUK7Y3R1-80M/SOT669/LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 160A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6986 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	160A (Ta)	10V	4V @ 1mA	108 nC @ 10 V	6986 pF @ 40 V	±20V	-	300W (Ta)	3.1mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
NVBGS4D1N15MC	onsemi	MOSFET N-CH 150V 20A/185A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 185A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4.5V @ 574µA Gate Charge (Qg) (Max) @ Vgs: 88.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7285 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 316W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 104A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Package: -	Stock1,122	MOSFET (Metal Oxide)	150 V	20A (Ta), 185A (Tc)	8V, 10V	4.5V @ 574µA	88.9 nC @ 10 V	7285 pF @ 75 V	±20V	-	3.7W (Ta), 316W (Tc)	4.1mOhm @ 104A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-7, D2PAK (6 Leads + Tab)
SQJ146ELP-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 74A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	74A (Tc)	4.5V, 10V	2.2V @ 250µA	35 nC @ 10 V	1780 pF @ 25 V	±20V	-	75W (Tc)	5.8mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8
SYC0102BLT1G	Littelfuse Inc.	SCR 0.25A GATE SCR FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
RFP18N08	Harris Corporation	N-CHANNEL, MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	18A (Tc)	10V	4V @ 1mA	-	1700 pF @ 25 V	±20V	-	75W (Tc)	100mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220	TO-220-3
MCG04N10Y-TP	Micro Commercial Co	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS139IXTSA1	Infineon Technologies	MOSFET N-CH 250V 100MA SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 56µA Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	Package: -	Stock88,260	MOSFET (Metal Oxide)	250 V	100mA (Ta)	0V, 10V	1V @ 56µA	2.3 nC @ 5 V	60 pF @ 25 V	±20V	Depletion Mode	360mW (Ta)	14Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT-23-3	TO-236-3, SC-59, SOT-23-3
RQ5A040ZPTL	Rohm Semiconductor	MOSFET P-CH 12V 4A TSMT3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT3 Package / Case: SC-96	Package: -	Stock25,575	MOSFET (Metal Oxide)	12 V	4A (Ta)	1.5V, 4.5V	1V @ 1mA	30 nC @ 4.5 V	2350 pF @ 6 V	±10V	-	700mW (Ta)	30mOhm @ 4A, 4.5V	150°C (TJ)	Surface Mount	TSMT3	SC-96
MMDF7N02ZR2	onsemi	SMALL SIGNAL N-CHANNEL MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J35AMFV-L3F	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 250MA VESM FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 10 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 150mA, 4.5V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: VESM Package / Case: SOT-723	Package: -	Stock125,316	MOSFET (Metal Oxide)	20 V	250mA (Ta)	1.2V, 4.5V	1V @ 100µA	-	42 pF @ 10 V	±10V	-	150mW (Ta)	1.4Ohm @ 150mA, 4.5V	150°C	Surface Mount	VESM	SOT-723
GSJD6505	Good-Ark Semiconductor	MOSFET, N-CH, SINGLE, 5A, 650V, FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 50 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock7,464	MOSFET (Metal Oxide)	650 V	5A (Tc)	10V	4V @ 250µA	15 nC @ 10 V	370 pF @ 50 V	±30V	-	46W (Tc)	900mOhm @ 2.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63