Page 82 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

AO3416_104
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V SOT23

Package: -

Stock3,216
2SK2989(T6CANO,A,F
Toshiba Semiconductor and Storage

MOSFET N-CH

Package: TO-226-3, TO-92-3 Long Body

Stock3,408
FDD45AN06LA0_F085
Fairchild/ON Semiconductor

MOSFET N-CH 60V 25A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,440
SI1050X-T1-E3
Vishay Siliconix

MOSFET N-CH 8V 1.34A SOT563F

Package: SOT-563, SOT-666

Stock65,280
TPCA8009-H(TE12L,Q
Toshiba Semiconductor and Storage

MOSFET N-CH 150V 7A 8-SOPA

Package: 8-PowerVDFN

Stock5,808
NTP27N06
ON Semiconductor

MOSFET N-CH 60V 27A TO220AB

Package: TO-220-3

Stock4,896
IRFS38N20DTRRP
Infineon Technologies

MOSFET N-CH 200V 43A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,408
IPA50R650CEXKSA2
Infineon Technologies

MOSFET N-CH 500V 4.6A TO-220FP

Package: TO-220-3 Full Pack

Stock4,512
APT39M60J
Microsemi Corporation

MOSFET N-CH 600V 42A SOT-227

Package: SOT-227-4, miniBLOC

Stock5,104
IXTP02N120P
IXYS

MOSFET N-CH 1200V 0.2A TO-220

Package: TO-220-3

Stock4,576
NVMFS5832NLWFT3G
ON Semiconductor

MOSFET N-CH 40V 120A SO8FL

Package: 8-PowerTDFN

Stock7,968
DMN3018SFGQ-7
Diodes Incorporated

MOSFET NCH 30V 8.5A POWERDI

Package: 8-PowerVDFN

Stock6,768
RUE002N05TL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A EMT3

Package: SC-75, SOT-416

Stock36,000
AOD476
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 20V 25A TO-252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock55,908
FDP8896
Fairchild/ON Semiconductor

MOSFET N-CH 30V 92A TO-220AB

Package: TO-220-3

Stock173,016
FDB082N15A
Fairchild/ON Semiconductor

MOSFET N-CH 150V 117A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,568
SI3459BDV-T1-E3
Vishay Siliconix

MOSFET P-CH 60V 2.9A 6-TSOP

Package: SOT-23-6 Thin, TSOT-23-6

Stock2,022,696
RU1J002YNTCL
Rohm Semiconductor

MOSFET N-CH 50V 0.2A UMT3F

Package: SC-85

Stock5,200
STWA20N95K5
STMicroelectronics

MOSFET N-CH 950V 17.5A TO-247

Package: TO-247-3

Stock16,320
SI7113DN-T1-GE3
Vishay Siliconix

MOSFET P-CH 100V 13.2A 1212-8

Package: PowerPAK? 1212-8

Stock3,808

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
AO3416_104	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V SOT23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock3,216	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
2SK2989(T6CANO,A,F	Toshiba Semiconductor and Storage	MOSFET N-CH FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	Package: TO-226-3, TO-92-3 Long Body	Stock3,408	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-92MOD	TO-226-3, TO-92-3 Long Body
FDD45AN06LA0_F085	Fairchild/ON Semiconductor	MOSFET N-CH 60V 25A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 36 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,440	MOSFET (Metal Oxide)	60V	5.2A (Ta), 25A (Tc)	5V, 10V	3V @ 250µA	11nC @ 5V	880pF @ 25V	±20V	-	55W (Tc)	36 mOhm @ 25A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
SI1050X-T1-E3	Vishay Siliconix	MOSFET N-CH 8V 1.34A SOT563F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.34A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 585pF @ 4V Vgs (Max): ±5V FET Feature: - Power Dissipation (Max): 236mW (Ta) Rds On (Max) @ Id, Vgs: 86 mOhm @ 1.34A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-89-6 Package / Case: SOT-563, SOT-666	Package: SOT-563, SOT-666	Stock65,280	MOSFET (Metal Oxide)	8V	1.34A (Ta)	1.5V, 4.5V	900mV @ 250µA	11.6nC @ 5V	585pF @ 4V	±5V	-	236mW (Ta)	86 mOhm @ 1.34A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SC-89-6	SOT-563, SOT-666
TPCA8009-H(TE12L,Q	Toshiba Semiconductor and Storage	MOSFET N-CH 150V 7A 8-SOPA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Rds On (Max) @ Id, Vgs: 350 mOhm @ 3.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock5,808	MOSFET (Metal Oxide)	150V	7A (Ta)	10V	4V @ 1mA	10nC @ 10V	600pF @ 10V	±20V	-	1.6W (Ta), 45W (Tc)	350 mOhm @ 3.5A, 10V	150°C (TJ)	Surface Mount	8-SOP Advance (5x5)	8-PowerVDFN
NTP27N06	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 27A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88.2W (Tc) Rds On (Max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,896	MOSFET (Metal Oxide)	60V	27A (Ta)	10V	4V @ 250µA	30nC @ 10V	1015pF @ 25V	±20V	-	88.2W (Tc)	46 mOhm @ 13.5A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFS38N20DTRRP	Infineon Technologies	MOSFET N-CH 200V 43A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 54 mOhm @ 26A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,408	MOSFET (Metal Oxide)	200V	43A (Tc)	10V	5V @ 250µA	91nC @ 10V	2900pF @ 25V	±20V	-	3.8W (Ta), 300W (Tc)	54 mOhm @ 26A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPA50R650CEXKSA2	Infineon Technologies	MOSFET N-CH 500V 4.6A TO-220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 342pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27.2W (Tc) Rds On (Max) @ Id, Vgs: 650 mOhm @ 1.8A, 13V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Full Pack Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock4,512	MOSFET (Metal Oxide)	500V	4.6A (Tc)	13V	3.5V @ 150µA	15nC @ 10V	342pF @ 100V	±20V	-	27.2W (Tc)	650 mOhm @ 1.8A, 13V	-40°C ~ 150°C (TJ)	Through Hole	TO-220 Full Pack	TO-220-3 Full Pack
APT39M60J	Microsemi Corporation	MOSFET N-CH 600V 42A SOT-227 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 42A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 11300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 480W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock5,104	MOSFET (Metal Oxide)	600V	42A	10V	5V @ 2.5mA	280nC @ 10V	11300pF @ 25V	±30V	-	480W (Tc)	110 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
IXTP02N120P	IXYS	MOSFET N-CH 1200V 0.2A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 104pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 75 Ohm @ 100mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock4,576	MOSFET (Metal Oxide)	1200V	200mA (Tc)	10V	4V @ 100µA	4.7nC @ 10V	104pF @ 25V	±20V	-	33W (Tc)	75 Ohm @ 100mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
NVMFS5832NLWFT3G	ON Semiconductor	MOSFET N-CH 40V 120A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 127W (Tc) Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock7,968	MOSFET (Metal Oxide)	40V	21A (Ta)	4.5V, 10V	2.4V @ 250µA	51nC @ 10V	2700pF @ 25V	±20V	-	3.7W (Ta), 127W (Tc)	4.2 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
DMN3018SFGQ-7	Diodes Incorporated	MOSFET NCH 30V 8.5A POWERDI FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 21 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerVDFN	Package: 8-PowerVDFN	Stock6,768	MOSFET (Metal Oxide)	30V	8.5A (Ta)	4.5V, 10V	2.1V @ 250µA	13.2nC @ 10V	697pF @ 15V	±25V	-	1W (Ta)	21 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerVDFN
RUE002N05TL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A EMT3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: EMT3 Package / Case: SC-75, SOT-416	Package: SC-75, SOT-416	Stock36,000	MOSFET (Metal Oxide)	50V	200mA (Ta)	1.2V, 4.5V	1V @ 1mA	-	25pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	EMT3	SC-75, SOT-416
AOD476	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 20V 25A TO-252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock55,908	MOSFET (Metal Oxide)	20V	25A (Tc)	2.5V, 10V	2V @ 250µA	18nC @ 10V	900pF @ 10V	±16V	-	2.1W (Ta), 33.3W (Tc)	21 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252, (D-Pak)	TO-252-3, DPak (2 Leads + Tab), SC-63
FDP8896	Fairchild/ON Semiconductor	MOSFET N-CH 30V 92A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock173,016	MOSFET (Metal Oxide)	30V	16A (Ta), 92A (Tc)	4.5V, 10V	2.5V @ 250µA	67nC @ 10V	2525pF @ 15V	±20V	-	80W (Tc)	5.9 mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDB082N15A	Fairchild/ON Semiconductor	MOSFET N-CH 150V 117A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (TO-263AB) Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,568	MOSFET (Metal Oxide)	150V	117A (Tc)	10V	4V @ 250µA	84nC @ 10V	6040pF @ 25V	±20V	-	294W (Tc)	8.2 mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (TO-263AB)	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SI3459BDV-T1-E3	Vishay Siliconix	MOSFET P-CH 60V 2.9A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 3.3W (Tc) Rds On (Max) @ Id, Vgs: 216 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	Package: SOT-23-6 Thin, TSOT-23-6	Stock2,022,696	MOSFET (Metal Oxide)	60V	2.9A (Tc)	4.5V, 10V	3V @ 250µA	12nC @ 10V	350pF @ 30V	±20V	-	2W (Ta), 3.3W (Tc)	216 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6 Thin, TSOT-23-6
RU1J002YNTCL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A UMT3F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs(th) (Max) @ Id: 800mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UMT3F Package / Case: SC-85	Package: SC-85	Stock5,200	MOSFET (Metal Oxide)	50V	200mA (Ta)	0.9V, 4.5V	800mV @ 1mA	-	26pF @ 10V	±8V	-	150mW (Ta)	2.2 Ohm @ 200mA, 4.5V	150°C (TJ)	Surface Mount	UMT3F	SC-85
STWA20N95K5	STMicroelectronics	MOSFET N-CH 950V 17.5A TO-247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 950V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 Package / Case: TO-247-3	Package: TO-247-3	Stock16,320	MOSFET (Metal Oxide)	950V	17.5A (Tc)	10V	5V @ 100µA	40nC @ 10V	1500pF @ 100V	±30V	-	250W (Tc)	330 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247	TO-247-3
SI7113DN-T1-GE3	Vishay Siliconix	MOSFET P-CH 100V 13.2A 1212-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1480pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 134 mOhm @ 4A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock3,808	MOSFET (Metal Oxide)	100V	13.2A (Tc)	4.5V, 10V	3V @ 250µA	55nC @ 10V	1480pF @ 50V	±20V	-	3.7W (Ta), 52W (Tc)	134 mOhm @ 4A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
AUIRF9540N	Infineon Technologies	MOSFET P-CH 100V 23A TO220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	4V @ 250µA	97 nC @ 10 V	1300 pF @ 25 V	±20V	-	140W (Tc)	117mOhm @ 11A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
DMP3045LFVW-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V POWERDI333 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 19.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: PowerDI3333-8 (SWP) Type UX Package / Case: 8-PowerVDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	5.7A (Ta), 19.9A (Tc)	4.5V, 10V	2.1V @ 250µA	13.6 nC @ 10 V	782 pF @ 15 V	±20V	-	900mW (Ta)	42mOhm @ 4.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount, Wettable Flank	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN
MCH6307-G-TL-E	onsemi	PCH 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SQC40016E_DFFR	Vishay Siliconix	N-CHANNEL 40-V (D-S) MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFP8N65X2	IXYS	MOSFET N-CH 650V 8A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	8A (Tc)	10V	5V @ 250µA	11 nC @ 10 V	790 pF @ 25 V	±30V	-	150W (Tc)	450mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMFS0D9N03CGT1G	onsemi	MOSFET N-CH 30V 48A/298A 5DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 298A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 131.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9450 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 144W (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN, 5 Leads	Package: -	Stock4,938	MOSFET (Metal Oxide)	30 V	48A (Ta), 298A (Tc)	10V	2.2V @ 200µA	131.4 nC @ 10 V	9450 pF @ 15 V	±20V	-	3.8W (Ta), 144W (Tc)	0.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN, 5 Leads
G075N06MI	Goford Semiconductor	N60V, 110A,RD<7M@10V,VTH1.0V~4.0 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6443 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Stock2,271	MOSFET (Metal Oxide)	60 V	110A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	6443 pF @ 30 V	±20V	-	160W (Tc)	7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PJP8NA65A_T0_00001	Panjit International Inc.	650V N-CHANNEL MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 145W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	7.5A (Ta)	10V	4V @ 250µA	29 nC @ 10 V	1245 pF @ 25 V	±30V	-	145W (Tc)	1.2Ohm @ 3.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3