Page 84 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

IRFR5505CPBF
Infineon Technologies

MOSFET P-CH 55V 18A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,928
BSO200N03S
Infineon Technologies

MOSFET N-CH 30V 7A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock443,304
NTD4810NHT4G
ON Semiconductor

MOSFET N-CH 30V 8.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock154,536
APT20M38SVFRG
Microsemi Corporation

MOSFET N-CH 200V 67A D3PAK

Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Stock7,504
HUFA75329D3ST
Fairchild/ON Semiconductor

MOSFET N-CH 55V 20A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,584
IRFR210TRL
Vishay Siliconix

MOSFET N-CH 200V 2.6A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,496
APT38M50J
Microsemi Corporation

MOSFET N-CH 500V 38A ISOTOP

Package: SOT-227-4, miniBLOC

Stock3,456
PMPB55XNEAX
Nexperia USA Inc.

PMPB55XNEA/SOT1220/SOT1220

Package: -

Stock7,056
TSM60NB190CI C0G
TSC America Inc.

MOSFET, SINGLE, N-CHANNEL, SUPER

Package: TO-220-3 Full Pack, Isolated Tab

Stock4,240
BSC117N08NS5ATMA1
Infineon Technologies

MOSFET N-CH 80V 49A 8TDSON

Package: 8-PowerTDFN

Stock3,536
RRH100P03GZETB
Rohm Semiconductor

MOSFET P-CH 30V 10A SOP8

Package: 8-SOIC (0.154", 3.90mm Width)

Stock3,440
FQD4N20TM
Fairchild/ON Semiconductor

MOSFET N-CH 200V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock12,840
PSMN034-100PS,127
Nexperia USA Inc.

MOSFET N-CH 100V TO220AB

Package: TO-220-3

Stock42,624
BSP230,135
Nexperia USA Inc.

MOSFET P-CH 300V 0.21A SOT223

Package: TO-261-4, TO-261AA

Stock29,958
IPP111N15N3 G
Infineon Technologies

MOSFET N-CH 150V 83A TO220-3

Package: TO-220-3

Stock6,784
FDMA7632
Fairchild/ON Semiconductor

MOSFET N-CH 30V 9A MICROFET2X2

Package: 6-VDFN Exposed Pad

Stock388,992
NTGS3455T1G
ON Semiconductor

MOSFET P-CH 30V 2.5A 6-TSOP

Package: SOT-23-6

Stock1,010,352
IXTH90P10P
IXYS

MOSFET P-CH 100V 90A TO-247

Package: TO-247-3

Stock14,856
SI7106DN-T1-E3
Vishay Siliconix

MOSFET N-CH 20V 12.5A 1212-8

Package: PowerPAK? 1212-8

Stock220,776
STD10NM60N
STMicroelectronics

MOSFET N-CH 600V 10A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock1,147,092

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IRFR5505CPBF	Infineon Technologies	MOSFET P-CH 55V 18A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 110 mOhm @ 9.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,928	MOSFET (Metal Oxide)	55V	18A (Tc)	10V	4V @ 250µA	32nC @ 10V	650pF @ 25V	±20V	-	57W (Tc)	110 mOhm @ 9.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSO200N03S	Infineon Technologies	MOSFET N-CH 30V 7A 8DSO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 10µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock443,304	MOSFET (Metal Oxide)	30V	7A (Ta)	4.5V, 10V	2V @ 10µA	6.5nC @ 5V	840pF @ 15V	±20V	-	1.56W (Ta)	20 mOhm @ 8.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
NTD4810NHT4G	ON Semiconductor	MOSFET N-CH 30V 8.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1225pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 10 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock154,536	MOSFET (Metal Oxide)	30V	9A (Ta), 54A (Tc)	4.5V, 11.5V	2.5V @ 250µA	12nC @ 4.5V	1225pF @ 12V	±20V	-	1.28W (Ta), 50W (Tc)	10 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
APT20M38SVFRG	Microsemi Corporation	MOSFET N-CH 200V 67A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 6120pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 370W (Tc) Rds On (Max) @ Id, Vgs: 38 mOhm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3 [S] Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Stock7,504	MOSFET (Metal Oxide)	200V	67A (Tc)	10V	4V @ 1mA	225nC @ 10V	6120pF @ 25V	±30V	-	370W (Tc)	38 mOhm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3 [S]	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
HUFA75329D3ST	Fairchild/ON Semiconductor	MOSFET N-CH 55V 20A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 128W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,584	MOSFET (Metal Oxide)	55V	20A (Tc)	10V	4V @ 250µA	65nC @ 20V	1060pF @ 25V	±20V	-	128W (Tc)	26 mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	TO-252AA	TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR210TRL	Vishay Siliconix	MOSFET N-CH 200V 2.6A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,496	MOSFET (Metal Oxide)	200V	2.6A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	2.5W (Ta), 25W (Tc)	1.5 Ohm @ 1.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
APT38M50J	Microsemi Corporation	MOSFET N-CH 500V 38A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 38A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	Package: SOT-227-4, miniBLOC	Stock3,456	MOSFET (Metal Oxide)	500V	38A	10V	5V @ 2.5mA	220nC @ 10V	8800pF @ 25V	±30V	-	357W (Tc)	100 mOhm @ 28A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
PMPB55XNEAX	Nexperia USA Inc.	PMPB55XNEA/SOT1220/SOT1220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Stock7,056	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM60NB190CI C0G	TSC America Inc.	MOSFET, SINGLE, N-CHANNEL, SUPER FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1273pF @ 100V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 33.8W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ITO-220 Package / Case: TO-220-3 Full Pack, Isolated Tab	Package: TO-220-3 Full Pack, Isolated Tab	Stock4,240	MOSFET (Metal Oxide)	600V	18A (Tc)	10V	4V @ 250µA	31nC @ 10V	1273pF @ 100V	±30V	-	33.8W (Tc)	190 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ITO-220	TO-220-3 Full Pack, Isolated Tab
BSC117N08NS5ATMA1	Infineon Technologies	MOSFET N-CH 80V 49A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 22µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock3,536	MOSFET (Metal Oxide)	80V	49A (Tc)	6V, 10V	3.8V @ 22µA	18nC @ 10V	1300pF @ 40V	±20V	-	2.5W (Ta), 50W (Tc)	11.7 mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
RRH100P03GZETB	Rohm Semiconductor	MOSFET P-CH 30V 10A SOP8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 650mW (Ta) Rds On (Max) @ Id, Vgs: 12.6 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock3,440	MOSFET (Metal Oxide)	30V	10A (Ta)	4V, 10V	2.5V @ 1mA	68nC @ 10V	3600pF @ 10V	±20V	-	650mW (Ta)	12.6 mOhm @ 10A, 10V	150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
FQD4N20TM	Fairchild/ON Semiconductor	MOSFET N-CH 200V 3A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock12,840	MOSFET (Metal Oxide)	200V	3A (Tc)	10V	5V @ 250µA	6.5nC @ 10V	220pF @ 25V	±30V	-	2.5W (Ta), 30W (Tc)	1.4 Ohm @ 1.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN034-100PS,127	Nexperia USA Inc.	MOSFET N-CH 100V TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1201pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 34.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Package: TO-220-3	Stock42,624	MOSFET (Metal Oxide)	100V	32A (Tc)	10V	4V @ 1mA	23.8nC @ 10V	1201pF @ 50V	±20V	-	86W (Tc)	34.5 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
BSP230,135	Nexperia USA Inc.	MOSFET P-CH 300V 0.21A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.55V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 17 Ohm @ 170mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	Package: TO-261-4, TO-261AA	Stock29,958	MOSFET (Metal Oxide)	300V	210mA (Ta)	10V	2.55V @ 1mA	-	90pF @ 25V	±20V	-	1.5W (Ta)	17 Ohm @ 170mA, 10V	150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IPP111N15N3 G	Infineon Technologies	MOSFET N-CH 150V 83A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs(th) (Max) @ Id: 4V @ 160µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 75V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 83A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	Package: TO-220-3	Stock6,784	MOSFET (Metal Oxide)	150V	83A (Tc)	8V, 10V	4V @ 160µA	55nC @ 10V	3230pF @ 75V	±20V	-	214W (Tc)	11.1 mOhm @ 83A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO-220-3	TO-220-3
FDMA7632	Fairchild/ON Semiconductor	MOSFET N-CH 30V 9A MICROFET2X2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-MicroFET (2x2) Package / Case: 6-VDFN Exposed Pad	Package: 6-VDFN Exposed Pad	Stock388,992	MOSFET (Metal Oxide)	30V	9A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	760pF @ 15V	±20V	-	2.4W (Ta)	19 mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-MicroFET (2x2)	6-VDFN Exposed Pad
NTGS3455T1G	ON Semiconductor	MOSFET P-CH 30V 2.5A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6	Package: SOT-23-6	Stock1,010,352	MOSFET (Metal Oxide)	30V	2.5A (Ta)	4.5V, 10V	3V @ 250µA	13nC @ 10V	480pF @ 5V	±20V	-	500mW (Ta)	100 mOhm @ 3.5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	6-TSOP	SOT-23-6
IXTH90P10P	IXYS	MOSFET P-CH 100V 90A TO-247 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 462W (Tc) Rds On (Max) @ Id, Vgs: 25 mOhm @ 45A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: TO-247-3	Stock14,856	MOSFET (Metal Oxide)	100V	90A (Tc)	10V	4V @ 250µA	120nC @ 10V	5800pF @ 25V	±20V	-	462W (Tc)	25 mOhm @ 45A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SI7106DN-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 12.5A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 19.5A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	Package: PowerPAK? 1212-8	Stock220,776	MOSFET (Metal Oxide)	20V	12.5A (Ta)	2.5V, 4.5V	1.5V @ 250µA	27nC @ 4.5V	-	±12V	-	1.5W (Ta)	6.2 mOhm @ 19.5A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
STD10NM60N	STMicroelectronics	MOSFET N-CH 600V 10A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock1,147,092	MOSFET (Metal Oxide)	600V	10A (Tc)	10V	4V @ 250µA	19nC @ 10V	540pF @ 50V	±25V	-	70W (Tc)	550 mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
RV4E031RPTCR1	Rohm Semiconductor	MOSFET P-CH 30V 3.1A DFN1616-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: DFN1616-6W Package / Case: 6-PowerWFDFN	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	3.1A (Ta)	4.5V, 10V	2.5V @ 1mA	4.8 nC @ 5 V	460 pF @ 10 V	±20V	-	1.5W	105mOhm @ 3.1A, 10V	150°C (TJ)	Surface Mount, Wettable Flank	DFN1616-6W	6-PowerWFDFN
IRF9541	Harris Corporation	P-CHANNEL POWER MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	80 V	19A (Tc)	10V	4V @ 250µA	90 nC @ 10 V	1100 pF @ 25 V	±20V	-	150W (Tc)	200mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
NTMYS3D5N04CTWG	onsemi	MOSFET N-CH 40V 24A/102A LFPAK4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK4 (5x6) Package / Case: SOT-1023, 4-LFPAK	Package: -	Stock9,000	MOSFET (Metal Oxide)	40 V	24A (Ta), 102A (Tc)	10V	3.5V @ 60µA	23 nC @ 10 V	1600 pF @ 25 V	±20V	-	3.6W (Ta), 68W (Tc)	3.3mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK4 (5x6)	SOT-1023, 4-LFPAK
FDP86363-F085	onsemi	MOSFET N-CH 80V 110A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	Package: -	Stock528	MOSFET (Metal Oxide)	80 V	110A (Tc)	10V	4V @ 250µA	150 nC @ 10 V	10000 pF @ 40 V	±20V	-	300W (Tc)	2.8mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3
NVD360N65S3T4G	onsemi	SF3 EASY AUTO 360MOHM DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Stock14,787	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	4.5V @ 200µA	16.8 nC @ 10 V	756 pF @ 400 V	±30V	-	83W (Tc)	360mOhm @ 5A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPAK (2 Leads + Tab), SC-63
APT8030JVFR	Microchip Technology	MOSFET N-CH 800V 25A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 510 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Package: -	Request a Quote	MOSFET (Metal Oxide)	800 V	25A (Tc)	-	4V @ 2.5mA	510 nC @ 10 V	7900 pF @ 25 V	-	-	-	300mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MCU12P06Y-TP	Micro Commercial Co	MOSFET P-CH 60V 12A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 12A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Package: -	Request a Quote	MOSFET (Metal Oxide)	60 V	12A	4.5V, 10V	2.5V @ 250µA	4.27 nC @ 4.5 V	505 pF @ 15 V	±20V	-	30W	85mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252 (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
SIHB22N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 19A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 100 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 179W (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 11A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	600 V	19A (Tc)	10V	4V @ 250µA	96 nC @ 10 V	1423 pF @ 100 V	±30V	-	179W (Tc)	182mOhm @ 11A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB