Page 83 - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products

BSO200P03SNTMA1
Infineon Technologies

MOSFET P-CH 30V 7.4A 8DSO

Package: 8-SOIC (0.154", 3.90mm Width)

Stock7,424
IRF7322D1TRPBF
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

Package: 8-SOIC (0.154", 3.90mm Width)

Stock5,184
AON7202_101
Alpha & Omega Semiconductor Inc.

MOSFET N-CH DFN

Package: 8-VDFN Exposed Pad

Stock7,792
SIR646DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 40V 60A PPAK 8SO

Package: PowerPAK? SO-8

Stock4,880
IRFR024TRL
Vishay Siliconix

MOSFET N-CH 60V 14A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock9,252
IPB120N06S403ATMA2
Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,952
FKV550N
Sanken

MOSFET N-CH 50V 50A TO-220F

Package: TO-220-3 Full Pack

Stock2,080
AOTF12N65
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 650V 12A TO220F

Package: TO-220-3 Full Pack

Stock6,624
STB85NF55T4
STMicroelectronics

MOSFET N-CH 55V 80A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock271,656
PMPB20XPE,115
Nexperia USA Inc.

MOSFET P-CH 20V 7.2A SOT1220

Package: 6-UDFN Exposed Pad

Stock4,416
FDWS86368_F085
Fairchild/ON Semiconductor

MOSFET NCH 80V 80A POWER56

Package: 8-PowerTDFN

Stock4,928
IXFX64N60P3
IXYS

MOSFET N-CH 600V 64A PLUS247

Package: TO-247-3

Stock6,384
IPB020NE7N3 G
Infineon Technologies

MOSFET N-CH 75V 120A TO263-3

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,840
PSMN5R5-60YS,115
Nexperia USA Inc.

MOSFET N-CH 60V 100A LFPAK

Package: SC-100, SOT-669

Stock5,600
BS270_D74Z
Fairchild/ON Semiconductor

MOSFET N-CH 60V 400MA TO-92

Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Stock3,264
DMP56D0UFB-7
Diodes Incorporated

MOSFET P-CH 50V 200MA 3DFN

Package: 3-UFDFN

Stock24,444
NTR5103NT1G
ON Semiconductor

MOSFET N-CH 60V 0.26A SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock384,252
IXFA12N65X2-TRL
IXYS

MOSFET N-CH 650V 12A TO263

Package: -

Request a Quote
NTE2934
NTE Electronics, Inc

MOSFET N-CH 400V 11.5A TO3PML

Package: -

Request a Quote
NVH4L160N120SC1
onsemi

SICFET N-CH 1200V 17.3A TO247

Package: -

Stock1,239

Part Number	Manufacturer	Description	Package	Stock	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSO200P03SNTMA1	Infineon Technologies	MOSFET P-CH 30V 7.4A 8DSO FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 1.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 25V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock7,424	MOSFET (Metal Oxide)	30V	7.4A (Ta)	10V	1.5V @ 100µA	54nC @ 10V	2330pF @ 25V	±25V	-	1.56W (Ta)	20 mOhm @ 9.1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
IRF7322D1TRPBF	Infineon Technologies	MOSFET P-CH 20V 5.3A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 62 mOhm @ 2.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: 8-SOIC (0.154", 3.90mm Width)	Stock5,184	MOSFET (Metal Oxide)	20V	5.3A (Ta)	2.7V, 4.5V	700mV @ 250µA	29nC @ 4.5V	780pF @ 15V	±12V	Schottky Diode (Isolated)	2W (Ta)	62 mOhm @ 2.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	8-SO	8-SOIC (0.154", 3.90mm Width)
AON7202_101	Alpha & Omega Semiconductor Inc.	MOSFET N-CH DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFN-EP (3x3) Package / Case: 8-VDFN Exposed Pad	Package: 8-VDFN Exposed Pad	Stock7,792	MOSFET (Metal Oxide)	30V	20A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 250µA	33nC @ 10V	2200pF @ 15V	±20V	-	3.1W (Ta), 36W (Tc)	5 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-DFN-EP (3x3)	8-VDFN Exposed Pad
SIR646DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 40V 60A PPAK 8SO FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W (Ta), 54W (Tc) Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	Package: PowerPAK? SO-8	Stock4,880	MOSFET (Metal Oxide)	40V	60A (Tc)	4.5V, 10V	2.2V @ 250µA	51nC @ 10V	2230pF @ 20V	±20V	-	5W (Ta), 54W (Tc)	3.8 mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8	PowerPAK? SO-8
IRFR024TRL	Vishay Siliconix	MOSFET N-CH 60V 14A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock9,252	MOSFET (Metal Oxide)	60V	14A (Tc)	10V	4V @ 250µA	25nC @ 10V	640pF @ 25V	±20V	-	2.5W (Ta), 42W (Tc)	100 mOhm @ 8.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
IPB120N06S403ATMA2	Infineon Technologies	MOSFET N-CH 60V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,952	MOSFET (Metal Oxide)	60V	120A (Tc)	10V	4V @ 120µA	160nC @ 10V	13150pF @ 25V	±20V	-	167W (Tc)	3.2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FKV550N	Sanken	MOSFET N-CH 50V 50A TO-220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 15 mOhm @ 25A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock2,080	MOSFET (Metal Oxide)	50V	50A (Ta)	10V	4.2V @ 250µA	-	2000pF @ 10V	±20V	-	35W (Tc)	15 mOhm @ 25A, 10V	150°C (TJ)	Through Hole	TO-220F	TO-220-3 Full Pack
AOTF12N65	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 650V 12A TO220F FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 720 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	Package: TO-220-3 Full Pack	Stock6,624	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	4.5V @ 250µA	48nC @ 10V	2150pF @ 25V	±30V	-	50W (Tc)	720 mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3F	TO-220-3 Full Pack
STB85NF55T4	STMicroelectronics	MOSFET N-CH 55V 80A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock271,656	MOSFET (Metal Oxide)	55V	80A (Tc)	10V	4V @ 250µA	150nC @ 10V	3700pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMPB20XPE,115	Nexperia USA Inc.	MOSFET P-CH 20V 7.2A SOT1220 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 294pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 23.5 mOhm @ 7.2A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	Package: 6-UDFN Exposed Pad	Stock4,416	MOSFET (Metal Oxide)	20V	7.2A (Ta)	1.8V, 4.5V	900mV @ 250µA	45nC @ 4.5V	294pF @ 10V	±12V	-	1.7W (Ta), 12.5W (Tc)	23.5 mOhm @ 7.2A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
FDWS86368_F085	Fairchild/ON Semiconductor	MOSFET NCH 80V 80A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 40V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tj) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Power56 Package / Case: 8-PowerTDFN	Package: 8-PowerTDFN	Stock4,928	MOSFET (Metal Oxide)	80V	80A (Tc)	10V	4V @ 250µA	75nC @ 10V	4350pF @ 40V	±20V	-	214W (Tj)	4.5 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	Power56	8-PowerTDFN
IXFX64N60P3	IXYS	MOSFET N-CH 600V 64A PLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1130W (Tc) Rds On (Max) @ Id, Vgs: 95 mOhm @ 32A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247?-3 Package / Case: TO-247-3	Package: TO-247-3	Stock6,384	MOSFET (Metal Oxide)	600V	64A (Tc)	10V	5V @ 4mA	145nC @ 10V	9900pF @ 25V	±30V	-	1130W (Tc)	95 mOhm @ 32A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PLUS247?-3	TO-247-3
IPB020NE7N3 G	Infineon Technologies	MOSFET N-CH 75V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.8V @ 273µA Gate Charge (Qg) (Max) @ Vgs: 206nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 37.5V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,840	MOSFET (Metal Oxide)	75V	120A (Tc)	10V	3.8V @ 273µA	206nC @ 10V	14400pF @ 37.5V	±20V	-	300W (Tc)	2 mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-2	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PSMN5R5-60YS,115	Nexperia USA Inc.	MOSFET N-CH 60V 100A LFPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3501pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	Package: SC-100, SOT-669	Stock5,600	MOSFET (Metal Oxide)	60V	100A (Tc)	10V	4V @ 1mA	56nC @ 10V	3501pF @ 30V	±20V	-	130W (Tc)	5.2 mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
BS270_D74Z	Fairchild/ON Semiconductor	MOSFET N-CH 60V 400MA TO-92 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 2 Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Stock3,264	MOSFET (Metal Oxide)	60V	400mA (Ta)	4.5V, 10V	2.5V @ 250µA	-	50pF @ 25V	±20V	-	625mW (Ta)	2 Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-92-3	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
DMP56D0UFB-7	Diodes Incorporated	MOSFET P-CH 50V 200MA 3DFN FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.58nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 50.54pF @ 25V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 425mW (Ta) Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-DFN1006 (1.0x0.6) Package / Case: 3-UFDFN	Package: 3-UFDFN	Stock24,444	MOSFET (Metal Oxide)	50V	200mA (Ta)	2.5V, 4V	1.2V @ 250µA	0.58nC @ 4V	50.54pF @ 25V	±8V	-	425mW (Ta)	6 Ohm @ 100mA, 4V	-55°C ~ 150°C (TJ)	Surface Mount	3-DFN1006 (1.0x0.6)	3-UFDFN
NTR5103NT1G	ON Semiconductor	MOSFET N-CH 60V 0.26A SOT23 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 240mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	Package: TO-236-3, SC-59, SOT-23-3	Stock384,252	MOSFET (Metal Oxide)	60V	260mA (Ta)	4.5V, 10V	2.6V @ 250µA	0.81nC @ 5V	40pF @ 25V	±30V	-	300mW (Ta)	2.5 Ohm @ 240mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-3 (TO-236)	TO-236-3, SC-59, SOT-23-3
IXFA12N65X2-TRL	IXYS	MOSFET N-CH 650V 12A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Package: -	Request a Quote	MOSFET (Metal Oxide)	650 V	12A (Tc)	10V	5V @ 250µA	18.5 nC @ 10 V	1134 pF @ 25 V	±30V	-	180W (Tc)	310mOhm @ 6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-263 (D2PAK)	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
NTE2934	NTE Electronics, Inc	MOSFET N-CH 400V 11.5A TO3PML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 92W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.75A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	Package: -	Request a Quote	MOSFET (Metal Oxide)	400 V	11.5A (Tc)	10V	4V @ 250µA	131 nC @ 10 V	2780 pF @ 25 V	±30V	-	92W (Tc)	300mOhm @ 5.75A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PML	TO-3P-3 Full Pack
NVH4L160N120SC1	onsemi	SICFET N-CH 1200V 17.3A TO247 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Vgs (Max): +25V, -15V FET Feature: - Power Dissipation (Max): 111W (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	Package: -	Stock1,239	SiCFET (Silicon Carbide)	1200 V	17.3A (Tc)	20V	4.3V @ 2.5mA	34 nC @ 20 V	665 pF @ 800 V	+25V, -15V	-	111W (Tc)	224mOhm @ 12A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4L	TO-247-4
AM2324N-T1-PF-ML	MOSLEADER	Single N 20V 2.6A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFH72N30X3	IXYS	MOSFET N-CH 300V 72A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 390W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 36A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 (IXTH) Package / Case: TO-247-3	Package: -	Request a Quote	MOSFET (Metal Oxide)	300 V	72A (Tc)	10V	4.5V @ 1.5mA	82 nC @ 10 V	5400 pF @ 25 V	±20V	-	390W (Tc)	19mOhm @ 36A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 (IXTH)	TO-247-3
SI3134KL3-TP	Micro Commercial Co	MOSFET N-CH 20V 750MA DFN1006-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 100mW Rds On (Max) @ Id, Vgs: 500mOhm @ 150mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	Package: -	Request a Quote	MOSFET (Metal Oxide)	20 V	750mA (Ta)	1.8V, 4.5V	1.1V @ 250µA	-	120 pF @ 16 V	±12V	-	100mW	500mOhm @ 150mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	DFN1006-3	SC-101, SOT-883
UJ4C075033L8SSR	Qorvo	750V/33MO,SICFET,G4,TOLL FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
TSM500N15CS-RLG	Taiwan Semiconductor Corporation	150V, 11A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1123 pF @ 80 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 12.7W (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	Package: -	Stock2,040	MOSFET (Metal Oxide)	150 V	4A (Ta), 11A (Tc)	10V	4V @ 250µA	20.5 nC @ 10 V	1123 pF @ 80 V	±20V	-	12.7W (Ta)	50mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-SOP	8-SOIC (0.154", 3.90mm Width)
IPC60R360P7X7SA1	Infineon Technologies	MOSFET N-CH DIE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
CP802-CWDM3011P-CM	Central Semiconductor Corp	MOSFET P-CH 30V 11A DIE FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 8 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	Package: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	3V @ 250µA	80 nC @ 10 V	3100 pF @ 8 V	±20V	-	-	13mOhm @ 1A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	Die	Die
AONR32320	Alpha & Omega Semiconductor Inc.	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Package: -	Request a Quote	-	-	12A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-